BFR360F
Low profile silicon NPN RF bipolar transistor
Product description
The BFR360F is a low noise device based on Si that is part of Infineon’s established third
generation RF bipolar transistor family. Its low current and low voltage characteristics
make the device suitable for low current amplifiers. It remains cost competitive without
compromising on ease of use.
Feature list
•
•
•
Minimum noise figure NFmin = 1 dB at 1.8 GHz, 3 V, 3 mA
High gain Gma = 15.5 dB at 1.8 GHz, 3 V, 15 mA
OIP3 = 24 dBm at 1.8 GHz, 3 V, 15 mA
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Potential applications
•
•
Low noise amplifiers (LNAs) for FM and AM radio
LNAs for sub-1 GHz ISM band applications
Device information
Table 1
Part information
Product name / Ordering code
Package
Pin configuration
Marking
Pieces / Reel
BFR360F / BFR360FH6327XTSA1
TSFP-3-1
1=B
FBs
3000
2=E
3=C
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Datasheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
Revision 2.0
2019-01-25
BFR360F
Low profile silicon NPN RF bipolar transistor
Table of contents
Table of contents
Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
3.1
3.2
3.3
3.4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4
Package information TSFP-3-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Datasheet
2
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BFR360F
Low profile silicon NPN RF bipolar transistor
Absolute maximum ratings
1
Absolute maximum ratings
Table 2
Absolute maximum ratings at TA = 25 °C (unless otherwise specified)
Parameter
Symbol
Values
Min.
–
Unit
Note or test condition
V
Open base
Max.
Collector emitter voltage
VCEO
6
Collector emitter voltage
VCES
15
E-B short circuited
Collector base voltage
VCBO
15
Open emitter
Emitter base voltage
VEBO
2
Open collector
Base current
IB
4
Collector current
IC
35
Total power dissipation 1)
Ptot
Junction temperature
TJ
Storage temperature
TStg
mA
–
210
mW
TS ≤ 98 °C
150
°C
–
-55
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Exceeding only one of these values may cause irreversible damage to the integrated
circuit.
1
TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB.
Datasheet
3
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BFR360F
Low profile silicon NPN RF bipolar transistor
Thermal characteristics
2
Thermal characteristics
Table 3
Thermal resistance
Parameter
Symbol
Junction - soldering point
RthJS
Values
Min.
Typ.
Max.
–
250
–
Unit
Note or test condition
K/W
–
240
mW
Ptot
180
120
60
00
15
30
45
60
75
90
105
120
°C
150
TS
Figure 1
Datasheet
Total power dissipation Ptot = f(TS)
4
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BFR360F
Low profile silicon NPN RF bipolar transistor
Electrical characteristics
3
Electrical characteristics
3.1
DC characteristics
Table 4
DC characteristics at TA = 25 °C (unless otherwise specified)
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note or test condition
Collector emitter breakdown voltage
V(BR)CEO
6
9
–
V
IC = 1 mA, IB = 0,
open base
Collector emitter leakage current
ICES
–
1
30 2)
nA
VCE = 4 V, VBE = 0,
E-B short circuited
2
50 2)
VCE = 10 V, VBE = 0,
TA = 85 °C,
E-B short circuited
Collector base leakage current
ICBO
1
30 2)
VCB = 4 V, IE = 0,
open emitter
Emitter base leakage current
IEBO
1
500 2)
VEB = 1 V, IC = 0,
open collector
DC current gain
hFE
120
160
VCE = 3 V, IC = 15 mA,
pulse measured
90
3.2
General AC characteristics
Table 5
General AC characteristics at TA = 25 °C
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note or test condition
Transition frequency
fT
11
14
–
GHz
VCE = 3 V, IC = 15 mA,
f = 1 GHz
Collector base capacitance
CCB
–
0.32
0.5
pF
VCB = 5 V, VBE = 0,
f = 1 MHz,
emitter grounded
Collector emitter capacitance
CCE
0.2
–
Emitter base capacitance
CEB
0.4
2
VCE = 5 V, VBE = 0,
f = 1 MHz,
base grounded
VEB = 0.5 V, VCB = 0,
f = 1 MHz,
collector grounded
Maximum values not limited by the device but by the short cycle time of the 100% test.
Datasheet
5
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BFR360F
Low profile silicon NPN RF bipolar transistor
Electrical characteristics
3.3
Frequency dependent AC characteristics
Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, TA = 25 °C.
VCE
Bias-T
RFOUT
3
VBE
RFIN
1
Bias-T
2
GND
Figure 2
Testing circuit
Table 6
AC characteristics, VCE = 3 V, f = 1.8 GHz
Parameter
Symbol
Values
Min.
Power gain
• Maximum power gain
• Transducer gain
Gma
|S21|2
Noise figure
• Minimum noise figure
NFmin
–
dB
IC = 15 mA
IC = 3 mA
dBm
24
9
Symbol
Values
Min.
Power gain
• Maximum power gain
• Transducer gain
Datasheet
–
IC = 15 mA, ZS = ZL = 50 Ω
AC characteristics, VCE = 3 V, f = 3 GHz
Parameter
Note:
15.5
13
Note or test condition
Max.
1
Linearity
OIP3
•
3rd order intercept point at output
•
1 dB gain compression point at output OP1dB
Table 7
Typ.
Unit
Gma
|S21|2
–
Typ.
11
9
Unit
Note or test condition
Max.
–
dB
IC = 15 mA
Gms = IS21 / S12I for k < 1; Gma = IS21 / S12 I(k-(k2-1)1/2) for k > 1. In order to get the NFmin values stated in
this chapter, the test fixture losses have been subtracted from all measured results. OIP3 value
depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 Ω from 0.1 MHz to 6 GHz.
6
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BFR360F
Low profile silicon NPN RF bipolar transistor
Electrical characteristics
3.4
Characteristic AC diagrams
17
GHz
14
fT
5V
12
3V
10
2V
8
1V
6
0.7V
4
2
00
5
10
15
20
25
30
mA
40
IC
Figure 3
Transition frequency fT = f(IC), f = 1 GHz, VCE = parameter
30
IP 3
dBm
20
15
10
6V
4V
3V
2V
1V
5
0
-5 0
5
10
15
20
25
30
mA
40
IC
Figure 4
Datasheet
3rd order intercept point OIP3 = f(IC), ZS = ZL = 50 Ω, VCE, f = 1.8 GHz, VCE = parameter
7
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BFR360F
Low profile silicon NPN RF bipolar transistor
Electrical characteristics
0.8
pF
Ccb
0.6
0.4
0.2
00
2
4
6
8
10
12
V
16
VCB
Figure 5
Collector base capacitance CCB = f(VCB), f = 1 MHz
36
dB
Ic = 15mA
28
5V
2V
1V
0.7V
G
24
20
16
12
8
4
0
0
0.5
1
1.5
2
2.5
3
3.5 GHz
4.5
f
Figure 6
Datasheet
Transducer Gain IS21I2 = f(f), IC = 15 mA, VCE = parameter
8
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BFR360F
Low profile silicon NPN RF bipolar transistor
Electrical characteristics
49
dB
Ic = 15mA
39
G
34
29
24
19
9
5V
2V
1V
0.7V
4
0
0.5
14
1
1.5
2
2.5
3.5 GHz
3
4.5
f
Figure 7
Gain Gma, Gms = f(f), IC = 15 mA, VCE = parameter
24
dB
G
22
5V
3V
2V
20
18
1V
16
0.7V
14
12 0
5
10
15
20
25
30
mA
40
IC
Figure 8
Datasheet
Gain Gma, Gms = f(IC), f = 900 MHz, VCE = parameter
9
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BFR360F
Low profile silicon NPN RF bipolar transistor
Electrical characteristics
18
dB
G
5V
3V
14
2V
12
1V
10
0.7V
80
5
10
15
20
25
30
mA
40
IC
Figure 9
Gain Gma, Gms = f(IC), f = 1.8 GHz, VCE = parameter
22
dB
0.9GHz
19
18
G
17
16
15
1.8GHz
14
13
2.4GHz
12
11
3GHz
10
9
4GHz
8
7
0
5
10
15
20
25
30
35 mA
45
IC
Figure 10
Datasheet
Maximum power gain Gmax = f(IC), VCE = 3 V, f = parameter in GHz
10
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BFR360F
Low profile silicon NPN RF bipolar transistor
Electrical characteristics
24
dB
Ic = 15mA
0.9GHz
Gmax
0.9GHz
20
G
S21
18
1.8GHz
Gmax
16
1.8GHz
14
S21
12
10
8
0
1
2
3
4
5
V
7
VCE
Figure 11
Maximum power gain Gmax = f(VCE), transducer gain |S21|² = f(VCE), IC = 15 mA,
f = parameter in GHz
+j50
+j25
+j100
+j10
2.4GHz
1.8GHz
3GHz
0
10
25
50
0.9GHz
100
4GHz
3mA
15mA
-j10
-j25
-j100
-j50
Figure 12
Datasheet
Source impedance for minimum noise figure ZS,opt = f(f), VCE = 3 V, IC = 3 / 15 mA
11
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BFR360F
Low profile silicon NPN RF bipolar transistor
Electrical characteristics
Figure 13
Minimum noise figure NFmin = f(f), VCE = 3 V, ZS = ZS,opt, IC = 3 / 15 mA
3
dB
F50
2.4
2.2
NFmin
F
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
5
10
15
20
25
30
35 mA
45
IC
Figure 14
Note:
Datasheet
Noise figure NFmin = f(IC), ZS = ZS,opt, NF50 = f(IC), ZS = 50 Ω, VCE = 3 V, f = 1.8 GHz
The curves shown in this chapter have been generated using typical devices but shall not be
considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C.
12
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BFR360F
Low profile silicon NPN RF bipolar transistor
Package information TSFP-3-1
4
Package information TSFP-3-1
Figure 15
Package outline
Figure 16
Foot print
TYP E CODE
NOTE OF MANUFACTURER
P IN 1
Figure 17
Marking layout example
Figure 18
Tape information
Datasheet
13
Revision 2.0
2019-01-25
BFR360F
Low profile silicon NPN RF bipolar transistor
Revision history
Revision history
Document
version
Date of
release
Description of changes
Revision 2.0
2019-01-25
New datasheet layout.
Datasheet
14
Revision 2.0
2019-01-25
Trademarks
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Edition 2019-01-25
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2019 Infineon Technologies AG
All Rights Reserved.
Do you have a question about any
aspect of this document?
Email: erratum@infineon.com
Document reference
IFX-kan1525443952290
IMPORTANT NOTICE
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event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical values
stated herein and/or any information regarding the
application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities of
any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer’s compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer’s products and any use of the product of
Infineon Technologies in customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments to
evaluate the suitability of the product for the intended
application and the completeness of the product
information given in this document with respect to such
application.
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dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
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