BFR380L3
Low profile linear silicon NPN RF bipolar transistor
Product description
The BFR380L3 is a low noise device based on Si that is part of Infineon’s established third
generation RF bipolar transistor family. Its high transition frequency and low current and
low noise characteristics make the device suitable for a broad range of applications as
high as 3.5 GHz. It remains cost competitive without compromising on ease of use.
Feature list
•
•
•
Minimum noise figure NFmin = 1.1 dB at 1.8 GHz, 3 V, 8 mA
High gain Gma = 14 dB at 1.8 GHz, 3 V, 40 mA
OIP3 = 29.5 dBm at 1.8 GHz, 3 V, 40 mA
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Potential applications
•
•
•
Low noise amplifiers (LNAs) for DVB-T/H
LNAs for TV white space application
Low noise, high linearity amplifiers for sub-1 GHz ISM band applications
Device information
Table 1
Part information
Product name / Ordering code
Package
Pin configuration
Marking
Pieces / Reel
BFR380L3 / BFR380L3E6327XTMA1
TSLP-3-1
1=B
FC
15000
2=E
3=C
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Datasheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
Revision 2.0
2019-01-25
BFR380L3
Low profile linear silicon NPN RF bipolar transistor
Table of contents
Table of contents
Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
3.1
3.2
3.3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
4
Package information TSLP-3-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Datasheet
2
Revision 2.0
2019-01-25
BFR380L3
Low profile linear silicon NPN RF bipolar transistor
Absolute maximum ratings
1
Absolute maximum ratings
Table 2
Absolute maximum ratings at TA = 25 °C (unless otherwise specified)
Parameter
Symbol
Values
Min.
–
Unit
Note or test condition
V
Open base
Max.
Collector emitter voltage
VCEO
6
Collector emitter voltage
VCES
15
E-B short circuited
Collector base voltage
VCBO
15
Open emitter
Emitter base voltage
VEBO
2
Open collector
Base current
IB
14
Collector current
IC
80
Total power dissipation 1)
Ptot
Junction temperature
TJ
Storage temperature
TStg
mA
–
380
mW
TS ≤ 96 °C
150
°C
–
-55
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Exceeding only one of these values may cause irreversible damage to the integrated
circuit.
1
TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB.
Datasheet
3
Revision 2.0
2019-01-25
BFR380L3
Low profile linear silicon NPN RF bipolar transistor
Thermal characteristics
2
Thermal characteristics
Table 3
Thermal resistance
Parameter
Symbol
Junction - soldering point
RthJS
Values
Min.
Typ.
Max.
–
140
–
90
105
Unit
Note or test condition
K/W
–
440
Ptot
mW
320
240
160
80
00
15
30
45
60
75
120
°C
150
TS
Figure 1
Datasheet
Total power dissipation Ptot = f(TS)
4
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BFR380L3
Low profile linear silicon NPN RF bipolar transistor
Electrical characteristics
3
Electrical characteristics
3.1
DC characteristics
Table 4
DC characteristics at TA = 25 °C (unless otherwise specified)
Parameter
Symbol
Values
Min.
Typ.
Unit Note or test condition
Max.
Collector emitter breakdown voltage
V(BR)CEO
6
9
–
V
IC = 1 mA, IB = 0,
open base
Collector emitter leakage current
ICES
–
1
30 2)
nA
VCE = 5 V, VBE = 0,
E-B short circuited
–
1000 2)
VCE = 15 V, VBE = 0,
E-B short circuited
30 2)
VCB = 5 V, IE = 0,
open emitter
10
500 2)
VEB = 1 V, IC = 0,
open collector
120
160
VCE = 3 V, IC = 40 mA,
pulse measured
Collector base leakage current
ICBO
Emitter base leakage current
IEBO
DC current gain
hFE
90
3.2
General AC characteristics
Table 5
General AC characteristics at TA = 25 °C
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note or test condition
Transition frequency
fT
11
14
–
GHz
VCE = 3 V, IC = 40 mA,
f = 1 GHz
Collector base capacitance
CCB
–
0.45
0.8
pF
VCB = 5 V, VBE = 0,
f = 1 MHz,
emitter grounded
Collector emitter capacitance
CCE
0.18
–
Emitter base capacitance
CEB
1
2
VCE = 5 V, VBE = 0,
f = 1 MHz,
base grounded
VEB = 0.5 V, VCB = 0,
f = 1 MHz,
collector grounded
Maximum values not limited by the device but by the short cycle time of the 100% test.
Datasheet
5
Revision 2.0
2019-01-25
BFR380L3
Low profile linear silicon NPN RF bipolar transistor
Electrical characteristics
3.3
Frequency dependent AC characteristics
Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, TA = 25 °C.
3
VC
VB
Bias-T
Out
RF-Out
Bias-T
RFIn
In
GND
1
2
Figure 2
Testing circuit
Table 6
AC characteristics, VCE = 3 V, f = 1.8 GHz
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Power gain
• Maximum power gain
• Transducer gain
Gma
|S21|2
11.5
9.5
14
11.5
16.5
13.5
Noise figure
•
Minimum noise figure
NFmin
0 .5
1.1
2.1
Linearity
OIP3
•
3rd order intercept point at output
•
1 dB gain compression point at output OP1dB
OP1dB
Table 7
Symbol
Power gain
• Maximum power gain
• Transducer gain
Datasheet
29.5
16
19.5
–
IC = 40 mA
IC = 8 mA
dBm
IC = 40 mA,
ZS = ZL = 50 Ω,
ZS = ZS,opt, ZL = ZL,opt
AC characteristics, VCE = 3 V, f = 3 GHz
Parameter
Note:
–
dB
Note or test condition
Gma
|S21|2
Values
Unit
Min.
Typ.
Max.
7.5
5.5
10
7.5
12.5
9.5
dB
Note or test condition
IC = 40 mA
Gms = IS21 / S12I for k < 1; Gma = IS21 / S12 I(k-(k2-1)1/2) for k > 1. In order to get the NFmin values stated in
this chapter, the test fixture losses have been subtracted from all measured results. OIP3 value
depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 Ω from 0.1 MHz to 6 GHz.
6
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BFR380L3
Low profile linear silicon NPN RF bipolar transistor
Package information TSLP-3-1
4
Package information TSLP-3-1
Figure 3
Package outline
Figure 4
Foot print
Figure 5
Marking layout example
Figure 6
Tape information
Note:
Datasheet
See our Recommendations for Printed Circuit Board Assembly of TSLP/TSSLP/TSNP Packages .
The marking layout is an example. For the real marking code refer to the device information on the
first page. The number of characters shown in the layout example is not necessarily the real one. The
marking layout can consist of less characters.
7
Revision 2.0
2019-01-25
BFR380L3
Low profile linear silicon NPN RF bipolar transistor
Revision history
Revision history
Document
version
Date of
release
Description of changes
Revision 2.0
2019-01-25
New datasheet layout.
Datasheet
8
Revision 2.0
2019-01-25
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2019-01-25
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2019 Infineon Technologies AG
All Rights Reserved.
Do you have a question about any
aspect of this document?
Email: erratum@infineon.com
Document reference
IFX-uuc1526275534524
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical values
stated herein and/or any information regarding the
application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities of
any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer’s compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer’s products and any use of the product of
Infineon Technologies in customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments to
evaluate the suitability of the product for the intended
application and the completeness of the product
information given in this document with respect to such
application.
WARNINGS
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized representatives of Infineon Technologies,
Infineon Technologies’ products may not be used in
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