BFS17PE6433

BFS17P NPN Silicon RF Transistor Features • • • • • • • • • Maximum collector-emitter voltage VCE0 = 15 V Maximum collector current IC = 25 mA Noise figure NF = 3.5 dB 3rd order output intercept point OIP3 = 21.5 dBm 1 dB output compression point P-1dB = 10 dBm Transition frequency fT = 1.4 GHz Maximum total power dissipation Ptot = 280 mW Package: SOT23 Pb-free (RoHS compliant) package Potential Applications • • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA For mixers and oscillators in sub-GHz applications Device Information ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type / Ordering code Marking BFS17P / BFS17PE6327HTSA1 MCs Datasheet www.infineon.com Pin Configuration 1=B 2=E 3=C Please read the Important Notice and Warnings at the end of this document Package SOT23 Revision 1.1 2017-06-01 BFS17P NPN Silicon RF Transistor Table of contents Table of contents Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Potential Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Device Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 4 Typical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 5 5.1 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 SOT23 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Datasheet 2 Revision 1.1 2017-06-01 BFS17P NPN Silicon RF Transistor Maximum Ratings 1 Maximum Ratings Table 1 Maximum Rating at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit Note or Test Condition Collector-emitter voltage VCEO 15 V – Collector-base voltage VCBO 25 – Emitter-base voltage VEBO 2.5 – Collector current IC 25 Peak collector current ICM 50 Total power dissipation 1) Ptot Junction temperature mA – 280 mW TS ≤ 95 °C Tj 150 °C – Ambient temperature TA -65 ... 150 Storage temperature TStg -65 ... 150 2 – Thermal Resistance Table 2 Thermal resistance Parameter Symbol Values Unit Note or Test Condition Junction - soldering point RthJS ≤ 195 K/W – Note: 1 For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) TS is measured on the collector lead at the soldering point to the pcb Datasheet 3 Revision 1.1 2017-06-01 BFS17P NPN Silicon RF Transistor Electrical Characteristics 3 Table 3 Electrical Characteristics DC Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Min. Typ. Max. Unit Note or Test Condition Collector-emitter breakdown voltage V(BR)CEO 15 – – V IC = 1 mA, IB = 0 Collector-base cutoff current ICBO – – 0.05 µA VCB = 10 V, IE = 0 – – 10 VCB = 25 V, IE = 0 Emitter-base cutoff current IEBO – – 100 µA VEB = 2.5 V, IC = 0 DC current gain hFE 40 – 150 – IC = 2 mA, VCE = 1 V pulse measured 20 70 – – 0.1 0.4 Collector-emitter saturation voltage Table 4 VCEsat V IC = 10 mA, IB = 1 mA Unit Note or Test Condition GHz IC = 2 mA, VCE = 5 V, f = 200 MHz AC Characteristics at TA = 25°C, unless otherwise specified Parameter Transition frequency Symbol fT Values Min. Typ. Max. 1 1.4 – 1.3 2.5 – 0.8 Collector-base capacitance Ccb – 0.55 Collector emitter capacitance Cce – 0.27 Emitter-base capacitance Ceb – 0.9 Minimum noise figure NFmin – Transducer gain |S21e|2 Third order intercept point at output 1dB compression point Datasheet IC = 25 mA, VCE = 1 V pulse measured IC = 25 mA, VCE = 5 V, f = 200 MHz pF VCB = 5 V, f = 1 MHz, VBE = 0 , emitter grounded pF VCE = 5 V, f = 1 MHz, VBE = 0 , base grounded 1.45 pF VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded 3.5 5 dB IC = 2 mA, VCE = 5 V, ZS = 50Ω, f = 800 MHz – 13 – dB IC = 20 mA, VCE = 5 V, ZS = ZL = 50Ω, f = 500 MHz OIP3 – 21.5 – dBm VCE = 5 V, IC = 20 mA, f = 800 MHz, ZS = ZSopt, ZL = ZLopt P-1dB – 10 – dBm IC = 20 mA, VCE = 5 V, ZS = ZL = 50Ω, f = 800 MHz 4 Revision 1.1 2017-06-01 BFS17P NPN Silicon RF Transistor Typical characteristics diagrams 4 Figure 1 Typical characteristics diagrams Total Power Dissipation R thJS [K/W] 10 3 10 2 D=0 D = .005 D = .01 D = .02 D = .05 D = .1 D = .2 D = .5 10 1 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t p[sec] Figure 2 Datasheet Permissible Pulse Load RthJS = f (tp) 5 Revision 1.1 2017-06-01 BFS17P NPN Silicon RF Transistor Typical characteristics diagrams P tot max / P tot DC [W] 100 D=0 D = .005 D = .01 D = .02 D = .05 D = .1 D = .2 D = .5 10 1 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t p [sec] Figure 3 Permissible Pulse Load Ptotmax / PtotDC = f (tp) 50 I B =429µA 45 P tot = 280mW I B =382µA 40 I B =336µA I C [mA] 35 I B =289µA 30 I B =243µA 25 I B =196µA 20 I B =150µA 15 I B =103µA 10 I B =57µA 5 0 I B =10µA 0 2 4 6 8 10 12 V CE [V] Figure 4 Datasheet Collector current IC = f(VCE), IB = parameter 6 Revision 1.1 2017-06-01 BFS17P NPN Silicon RF Transistor Typical characteristics diagrams 160 140 120 hfe 100 80 60 40 20 0 5 10 15 20 25 30 I C [mA] Figure 5 Current gain hFE= f(IC), VCE = 8 V 1 C 0.9 CB C EB 0.8 0.7 C [pF] 0.6 0.5 0.4 0.3 0.2 0.1 0 0 5 10 15 20 V CB ; VEB [V] Figure 6 Datasheet Collector-Base CCB=f(VCB); Emitter-Base Capacitance CEB=f(VEB) 7 Revision 1.1 2017-06-01 BFS17P NPN Silicon RF Transistor Typical characteristics diagrams 3.5 3 10V 5V fT [GHz] 2.5 3V 2 2V 1.5 1 1V 0.5 0 0 5 10 15 20 25 30 IC [mA] Figure 7 Datasheet Transition frequency fT = f(IC), VCE = parameter 8 Revision 1.1 2017-06-01 BFS17P NPN Silicon RF Transistor Package information 5.1 SOT23 package 2.9 ±0.1 B 1 1) 0.25 M B C 0.4 +0.1 -0.05 0.1 MAX. 2.4 ±0.15 3 1 ±0.1 2 0.2 C 0.95 M 1.3 ±0.1 5 0.15 MIN. Package information 0.08...0.1 A 1) Lead width can be 0.6 max. in dambar area SOT23-PO V08 SOT23 package outline Soldering Type: Wave Soldering 0.8 0.9 0.8 1.2 0.8 SOT23-FPR V08 1.6 1.2 SOT23-FPW V08 1.4 MIN. 0.8 0.9 1.3 Transport direction 1.4 MIN. Soldering Type: Reflow Soldering Figure 9 A 0...8˚ 1.9 Figure 8 5 SOT23 foot frint Manufacturer EH s 2005, June Date code (YM) BCW66 Type code Pin 1 Figure 10 SOT23 marking layout (example) 4 0.2 2.65 8 2.13 0.9 Pin 1 3.15 1.15 SOT23-TP V02 Figure 11 Datasheet SOT23 tape and reel 9 Revision 1.1 2017-06-01 BFS17P NPN Silicon RF Transistor Revision History Revision History Major changes since previous revision Revision History Reference Description All pages 2017-06-01: Conversion to new document template RthJS 2017-06-01: Update of value Datasheet 10 Revision 1.1 2017-06-01 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2017-06-01 Published by Infineon Technologies AG 81726 Munich, Germany © 2017 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-kwg1493983596879 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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