BFS386L6E6327

BFS386L6 NPN Silicon RF Transistor 4 Preliminary data
Low voltage/ low current operation 3 5
For low noise amplifiers 2 6
For oscillators up to 3.5 GHz and Pout > 10 dBm 1
Low noise figure: TR1: 1.0dB at 1.8 GHz TR2: 1.1 dB at 1.8 GHz
Built in 2 Transistors (TR1: die as BFR360L3, TR2: die as BFR380L3) 6 T R 1 1 5 T R 2 2 P-TSLP-6-1 4 3 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFS386L6 Marking Pin Configuration Package FD 1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value TR1 6 TR2 6 Collector-emitter voltage Unit V VCES TR1 15 TR2 15 Collector-base voltage VCBO TR1 15 TR2 15 Emitter-base voltage VEBO TR1 2 TR2 2 Collector current mA IC TR1 35 TR2 80 1 Jun-11-2003 BFS386L6 Maximum Ratings Parameter Symbol Base current IB Value mA TR1 4 TR2 14 Total power dissipation1) mW Ptot TS
101°C, TR1 210 TS
96°C, TR2 380 Junction temperature °C Tj TR1 150 TR2 150 Ambient temperature Unit TA TR1 -65 ... 150 TR2 -65 ... 150 Storage temperature Tstg TR1 -65 ... 150 TR2 -65 ... 150 Thermal Resistance Parameter Symbol Junction - soldering point2) RthJS Value Unit K/W
230
140 TR1 TR2 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 2 Jun-11-2003 BFS386L6 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V V(BR)CEO TR1, IC = 1 mA, IB = 0 6 9 - TR2, IC = 1mA, IB = 0 6 9 - Collector-emitter cutoff current µA ICES TR1, VCE = 15 V , VBE = 0 - - 10 TR2, VCE = 15 V , VBE = 0 - - 10 Collector-base cutoff current nA ICBO TR1, VCB = 5 V, IE = 0 - - 100 TR2, VCB = 5 V, IE = 0 - - 100 Emitter-base cutoff current µA IEBO TR1, VEB = 1 V, IC = 0 - - 1 TR2, VEB = 1 V, IC = 0 - - 1 DC current gain- - hFE TR1, IC = 15 mA, VCE = 3 V 60 130 200 TR2, IC = 40 mA, VCE = 3 V 60 130 200 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. typ. Unit max. AC Characteristics (verified by random sampling) Transition frequency fT GHz TR1, IC = 15 mA, VCE = 3 V, f = 1 GHz - 14 - TR2, IC = 40 mA, VCE = 3 V, f = 1 GHz - 14 - Collector-base capacitance pF Ccb TR1, VCB = 5 V, f = 1 MHz, emitter grounded - 0.3 - TR2, VCB = 5 V, f = 1 MHz, emitter grounded - 0.5 - TR1, VCE = 5 V, f = 1 MHz, base grounded - 0.15 - TR2, VCE = 5 V, f = 1 MHz, base grounded - 0.2 - TR1, VEB = 0,5 V, f = 1 MHz, collector grounded - 0.43 - TR2, VEB = 0,5 V, f = 1 MHz, collector grounded - 1.1 - Collector emitter capacitance Cce Emitter-base capacitance Ceb 3 Jun-11-2003 BFS386L6 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. typ. max. AC Characteristics (verified by random sampling) Noise figure F TR1, IC = 3 mA, VCE = 3 V, ZS = ZSopt , f = 1.8 GHz - 1 - TR1, IC = 3 mA, VCE = 3 V, ZS = ZSopt , f = 3 GHz - 1.6 - TR2, IC = 8 mA , VCE = 3 V, ZS = ZSopt , f = 1.8 GHz - 1.3 - TR2, IC = 8 mA , VCE = 3 V, ZS = ZSopt , f = 3 GHz - 1.9 - TR1, IC = 15 mA, VCE = 3 V, f = 1.8 GHz - 14.5 - TR1, IC = 15 mA, VCE = 3 V, f = 3 GHz - 10 - TR2, IC = 40 mA, VCE = 3 V, f = 1.8 GHz - 12 - TR2, IC = 40 mA, VCE = 3 V, f = 3 GHz - 8 - TR1, IC = 15 mA, VCE = 3 V, f = 1.8 GHz - 12 - TR1, IC = 15 mA, VCE = 3 V, f = 3 GHz - 8 - TR2, IC = 15 mA, VCE = 3 V, f = 1.8 GHz - 10 - TR2, IC = 15 mA, VCE = 3 V, f = 3 GHz - 6 - Power gain, maximum available1) Unit dB Gma |S21e|2 Transducer gain Third order intercept point at output2) dBm IP3 TR1, VCE = 3 V, IC = 15 mA, f = 1.8 GHz - 24 - TR2, VCE = 3 V, IC = 40 mA, f = 1.8 GHz - 27 - TR1, IC = 15 mA, VCE = 3 V, f = 1.8 GHz - 9 - TR2, IC = 40 mA, VCE = 3 V, f = 1.8 GHz - 11.5 - 1dB Compression point P-1dB 1G 1/2 ma = |S21e / S12e | (k-(k²-1) ) 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50
from 0.1 MHz to 6 GHz 4 Jun-11-2003