BFY193PZZZA1

BFY193 HiRel NPN Silicon RF Transistor  HiRel Discrete and Microwave Semiconductor  For low noise, high-gain amplifiers up to 2GHz.  For linear broadband amplifiers  Hermetically sealed microwave package   4 3 1 2 fT= 8 GHz F = 2.3 dB at 2 GHz Space Qualified ESA/SCC Detail Spec. No.: 5611/006 Type Variant No. 06 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration 1 BFY193 (ql) (ql) Quality Level: - see below C 2 E 3 Package 4 B E Micro-X1 P: Professional Quality H: High Rel Quality S: Space Quality ES: ESA Space Quality (see order instructions for ordering example) IFAG IMM RPD D HIR 1 of 4 V2, February 2011 BFY193 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage, VBE=0 VCES 20 V Collector-base voltage VCBO 20 V Emitter-base voltage VEBO 2 V Collector current IC 80 mA 1) Base current IB 10 mA Total power dissipation, TS  104°C 2), 3) Ptot 580 mW Junction temperature Tj 200 C Operating temperature range Top -65...+200 C Storage temperature range Tstg -65...+200 C Rth JS < 165 K/W Thermal Resistance Junction-soldering point 3) Notes.: 1) The maximum permissible base current for VFBE measurements is 30mA (spotmeasurement duration < 1s) 2) At TS = + 104 °C. For TS > + 104 °C derating is required. 3) TS is measured on the collector lead at the soldering point to the pcb. Electrical Characteristics at TA=25°C; unless otherwise specified Parameter Symbol Values Unit min. typ. max. ICBO - - 100 µA ICEX - - 600 µA ICBO - - 50 nA IEBO - - 25 A IEBO - - 0.5 A DC Characteristics Collector-base cutoff current VCB = 20 V, IE = 0 Collector-emitter cutoff current VCE = 12 V, IB = 0,5µA 1.) Collector-base cutoff current VCB = 10 V, IE = 0 Emitter base cuttoff current VEB = 2 V, IC = 0 Emitter base cuttoff current VEB = 1 V, IC = 0 Notes: 1.) This Test assures V(BR)CE0 > 12V IFAG IMM RPD D HIR 2 of 4 V2, February 2011 BFY193 Electrical Characteristics (continued) Parameter Symbol Values Unit min. typ. max. VFBE - - 1 V hFE 50 100 175 - DC Characteristics Base-Emitter forward voltage IE = 30 mA, IC = 0 DC current gain IC = 30 mA, VCE = 8 V AC Characteristics Transition frequency fT GHz IC = 40mA, VCE = 5 V, f = 500 MHz 6,5 7.5 - IC = 50 mA, VCE = 8 V, f = 500 MHz - 8 - CCB - 0.56 0.75 pF CCE - 0.34 - pF CEB - 1.9 2.4 pF F - 2.3 2.9 dB 12.5 13.5 - dB |S21e| 8 9 - dB POUT 16.5 17.5 - dBm Collector-base capacitance VCB = 10 V, VBE = vbe = 0, f = 1 MHz Collector-emitter capacitance VCE = 10 V, VBE = vbe = 0, f = 1 MHz Emitter-base capacitance VEB = 0.5V, VCB = vcb = 0, f = 1 MHz Noise Figure IC = 15 mA, VCE = 5 V, f = 2 GHz, ZS = ZSopt Power gain 1.) Gma IC = 40 mA, VCE = 5V, f = 2 GHz ZS = ZSopt , ZL= ZLopt 2 Transducer gain IC = 40 mA, VCE = 5 V, f = 2 GHz ZS = ZL = 50  Output Power IC = 50 mA, VCE = 5 V, f = 2GHz, PIN=10dBm, ZS = ZL = 50  Notes.: 1.) Gma  S 21 ( k  k 2  1) , S12 IFAG IMM RPD D HIR Gms  S 21 S12 3 of 4 V2, February 2011 BFY193 Micro-X1 Package 4 Edition 2011-02 3 Published by Infineon Technologies AG 1 2 85579 Neubiberg, Germany © Infineon Technologies AG 2011 All Rights Reserved. Attention please! The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie“). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of an third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. IFAG IMM RPD D HIR 4 of 4 V2, February 2011