BGA123N6E6327XTSA1

B G A 1 23 N 6 U l t ra Lo w Cu r re n t Lo w N o i s e A m p l i f i e r f o r G N SS A p p l i c at i o n s Features • Operation frequencies: 1550 to 1615 MHz • Ultra low current consumption: 1.3 mA • Wide supply voltage range: 1.1 V to 3.3 V • High insertion power gain: 19.0 dB • Low noise figure: 0.75 dB • 2 kV HBM ESD protection (inluding AI pin) 0.7 x 1.1 mm2 • Ultra small and RoHS/WEEE compliant package Potential Application The BGA123N6 is designed to enhance GNSS signal sensitivity especially in wearables and mobile cellular IoT applications. With the very good performance it ensures high system sensitivity. The ultra low power consumption of 1.5mW preserves valuable battery power, ideal for small battery powered GNSS devices. The wide supply voltage range from 1.1 V to 3.3 V ensure flexible design and high compatibility. It supports all GNSS systems including GPS, GLONASS, Beidou and Galileo. Product Validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Block diagram VCC PON AI AO ESD GND Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document Revision 2.1 2021-02-22 BGA123N6 Ultra Low Current Low Noise Amplifier for GNSS Applications Table of Contents Table of Contents Table of Contents 1 1 2 Features 2 Maximum Ratings 3 3 Electrical Characteristics 4 4 Application Information 7 5 Package Information 9 Datasheet 1 Revision 2.1 2021-02-22 BGA123N6 Ultra Low Current Low Noise Amplifier for GNSS Applications Features 1 Features • Operation frequencies: 1550 to 1615 MHz • Ultra low current consumption: 1.3 mA • Wide supply voltage range: 1.1 V to 3.3 V • High insertion power gain: 19.0 dB • Low noise figure: 0.75 dB • 2 kV HBM ESD protection (inluding AI pin) • Only one external matching component needed • Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2 ) • RoHS/WEEE compliant package Description The BGA123N6 is designed to enhance GNSS signal sensitivity especially in wearables and mobile cellular IoT applications. With the very good performance it ensures high system sensitivity. The ultra low power consumption of 1.5mW preserves valuable battery power, ideal for small battery powered GNSS devices. The wide supply voltage range from 1.1 V to 3.3 V ensure flexible design and high compatibility. It supports all GNSS systems including GPS, GLONASS, Beidou and Galileo. The BGA123N6 LNA is manufactured in Infineon’s patented bipolar technology. The device has a very small size of only 0.7 x 1.1 mm2 and a maximum height of 0.375 mm. The device configuration is shown in Fig. 1. VCC PON AI AO ESD GND Figure 1: BGA123N6 Block diagram Product Name Marking Package BGA123N6 6 PG-TSNP-6-2 Datasheet 2 Revision 2.1 2021-02-22 BGA123N6 Ultra Low Current Low Noise Amplifier for GNSS Applications Maximum Ratings 2 Maximum Ratings Table 1: Maximum Ratings Parameter Symbol Unit Note / Test Condition Min. Typ. Max. Voltage at pin VCC V CC -0.3 – 3.6 V 1 Voltage at pin AI V AI -0.3 – 0.9 V – Voltage at pin AO V AO -0.3 – V CC + 0.3 V – Voltage at pin PON V PON -0.3 – V CC + 0.3 V – Voltage at pin GND V GND -0.3 – 0.3 V – Current into pin VCC ICC – – 9 mA – RF input power PIN – – +25 dBm 2 Total power dissipation Ptot – – 60 mW – TJ – – 150 ◦ C – TA -40 – 85 ◦ C – Storage temperature range T STG -55 – 150 ◦ C – ESD capability, HBM V ESD_HBM -2000 – +2000 V Junction temperature Ambient temperature range Values 3 1 All voltages refer to GND-Nodes unless otherwise noted 2 Tested at max VCC/VPON, 85◦ C and for 60 minutes 3 Human Body Model ANSI/ESDA/JEDEC JS-001 (R = 1.5 kΩ, C = 100 pF) Warning: Stresses above the max. values listed here may cause permanent damage to the device. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Exposure to conditions at or belowabsolute maximum rating but above the specified maximum operation conditions may affect device reliability and life time. Functionality of the device might not be given under these conditions. Datasheet 3 Revision 2.1 2021-02-22 BGA123N6 Ultra Low Current Low Noise Amplifier for GNSS Applications Electrical Characteristics 3 Electrical Characteristics Table 3: Electrical Characteristics at T A = 25 ◦C, V CC = 1.2 V, f = 1550– 1615 MHz Parameter1 Symbol Supply Voltage V CC Supply Current ICC Power on Voltage V PON Power on Current IPON Values Unit Note / Test Condition Min. Typ. Max. 1.1 1.2 3.3 V – – 1.3 1.65 mA ON-Mode – 0.2 3 µA OFF-Mode 1.1 – V ON-Mode 0.0 – V CC 0.4 V OFF-Mode – 1.5 3 µA ON-Mode – – 1 µA OFF-Mode |S21 | 16.7 18.7 20.7 dB ON-Mode NF – 0.80 1.20 dB ON-Mode RLIN 9 12 – dB ON-Mode RLOUT 10 18 – dB ON-Mode 1/|S21 |2 25 40 – dB ON-Mode Power up settling time4 5 tS – 8 11 µs OFF- to ON-Mode Inband input 1dB-compression IP1dB -23 -19 – dBm ON-Mode IIP3 -18 -13 – dBm ON-Mode IIP3OOB -14 -9 – dBm ON-Mode k >1 – – Insertion Power Gain 2 f = 1575 MHz Noise Figure2 f = 1575 MHz ZS = 50Ω Input return loss3 f = 1575 MHz Output return loss3 f = 1575 MHz Reverse isolation3 f = 1575 MHz 3 point f = 1575 MHz Inband input 3rd-order intercept 36 point Out of band input 3rd-order in57 tercept point Stability5 f =20 MHz–10 GHz 1 Based on application described in chapter 4 2 PCB losses are substrated 3 Verification based on AQL; not 100% tested in production 4 LNA gain changed to 90% of final gain value (in dB) 5 Guaranteed by device design; not tested in production 6 Inband @ 1575 MHz, Input power = −30 dBm for each tone, 1 MHz tone distance 7 f1 = 1712.7 MHz, f2 = 1850 MHz, Input power = −20 dBm for each tone Datasheet 4 Revision 2.1 2021-02-22 BGA123N6 Ultra Low Current Low Noise Amplifier for GNSS Applications Electrical Characteristics Table 4: Electrical Characteristics at T A = 25 ◦C, V CC = 1.8 V, f = 1550– 1615 MHz Parameter1 Symbol Supply Voltage V CC Supply Current ICC Power on Voltage V PON Power on Current IPON Values Unit Note / Test Condition Min. Typ. Max. 1.1 1.8 3.3 V – – 1.35 1.7 mA ON-Mode – 0.2 3 µA OFF-Mode 1.1 0.0 – – V CC 0.4 V V ON-Mode OFF-Mode – 3 6 µA ON-Mode – – 1 µA OFF-Mode |S21 | 17.0 19.0 21.0 dB ON-Mode NF – 0.75 1.15 dB ON-Mode RLIN 9 12 – dB ON-Mode RLOUT 10 17 – dB ON-Mode 1/|S21 |2 25 40 – dB ON-Mode Power up settling time4 5 tS – 7 10 µs OFF- to ON-Mode Inband input 1dB-compression IP1dB -19 -15 – dBm ON-Mode IIP3 -17 -12 – dBm ON-Mode IIP3OOB -12 -7 – dBm ON-Mode k >1 – – Insertion Power Gain 2 f = 1575 MHz Noise Figure2 f = 1575 MHz ZS = 50Ω Input return loss3 f = 1575 MHz Output return loss3 f = 1575 MHz Reverse isolation3 f = 1575 MHz point3 f = 1575 MHz Inband input 3rd-order intercept 36 point Out of band input 3rd-order intercept point5 7 Stability5 f =20 MHz–10 GHz 1 Based on application described in chapter 4 2 PCB losses are substrated 3 Verification based on AQL; not 100% tested in production 4 LNA gain changed to 90% of final gain value (in dB) 5 Guaranteed by device design; not tested in production 6 Inband @ 1575 MHz, Input power = −30 dBm for each tone, 1 MHz tone distance 7 f1 = 1712.7 MHz, f2 = 1850 MHz, Input power = −20 dBm for each tone Datasheet 5 Revision 2.1 2021-02-22 BGA123N6 Ultra Low Current Low Noise Amplifier for GNSS Applications Electrical Characteristics Table 5: Electrical Characteristics at T A = 25 ◦C, V CC = 2.8 V, f = 1550– 1615 MHz Parameter1 Symbol Supply Voltage V CC Supply Current ICC Power on Voltage V PON Power on Current IPON Values Unit Note / Test Condition Min. Typ. Max. 1.1 2.8 3.3 V – – 1.45 1.8 mA ON-Mode – 0.2 3 µA OFF-Mode 1.1 0.0 – – V CC 0.4 V V ON-Mode OFF-Mode – 5 10 µA ON-Mode – – 1 µA OFF-Mode |S21 | 17.2 19.2 21.2 dB ON-Mode NF – 0.75 1.15 dB ON-Mode RLIN 9 12 – dB ON-Mode RLOUT 10 17 – dB ON-Mode 1/|S21 |2 25 30 – dB ON-Mode Power up settling time4 5 tS – 7 10 µs OFF- to ON-Mode Inband input 1dB-compression IP1dB -16 -12 – dBm ON-Mode IIP3 -16 -11 – dBm ON-Mode IIP3OOB -11 -6 – dBm ON-Mode k >1 – – Insertion Power Gain 2 f = 1575 MHz Noise Figure2 f = 1575 MHz ZS = 50Ω Input return loss3 f = 1575 MHz Output return loss3 f = 1575 MHz Reverse isolation3 f = 1575 MHz point3 f = 1575 MHz Inband input 3rd-order intercept 36 point Out of band input 3rd-order intercept point5 7 Stability5 f =20 MHz–10 GHz 1 Based on application described in chapter 4 2 PCB losses are substrated 3 Verification based on AQL; not 100% tested in production 4 LNA gain changed to 90% of final gain value (in dB) 5 Guaranteed by device design; not tested in production 6 Inband @ 1575 MHz, Input power = −30 dBm for each tone, 1 MHz tone distance 7 f1 = 1712.7 MHz, f2 = 1850 MHz, Input power = −20 dBm for each tone Datasheet 6 Revision 2.1 2021-02-22 BGA123N6 Ultra Low Current Low Noise Amplifier for GNSS Applications Application Information 4 Application Information Pin Configuration and Function GND 4 3 AO AI 5 2 VCC PON 6 1 GND Figure 2: BGA123N6 Pin Configuration (top view) Table 6: Pin Definition and Function Pin No. Name Function 1 GND Ground 2 VCC DC Supply 3 AO LNA Output 4 GND Ground 5 AI LNA Input 6 PON Power On Control Datasheet 7 Revision 2.1 2021-02-22 BGA123N6 Ultra Low Current Low Noise Amplifier for GNSS Applications Application Information Application Board Configuration N1 BGA123N6 GND, 4 AO, 3 RFout L1 C1 (optional) RFin AI, 5 VCC VCC, 2 C2 (optional) PON PO N, 6 GND, 1 Figure 3: BGA123N6 Application Schematic Table 7: Bill of Materials Table Name Value Package Manufacturer Function C1 (optional) 1nF 0402 Various DC block1 C2 (optional) ≥ 1nF 0402 Various RF bypass2 L1 10nH 0402 Murata LQW15 type Input matching N1 BGA123N6 PG-TSNP-6-2 Infineon GNSS LNA 1 DC block might be realized with pre-filter in GNSS applications. 2 RF bypass recommended to mitigate power supply noise. Datasheet 8 Revision 2.1 2021-02-22 BGA123N6 Ultra Low Current Low Noise Amplifier for GNSS Applications Package Information 5 Package Information Figure 4: PG-TSNP-6-2 Package Outline (0.7mm x 1.1mm x 0.375mm) NSMD 0.4 0.4 0.25 0.25 0.4 0.4 0.25 0.25 (stencil thickness 100 µm) Copper Stencil apertures Solder mask Figure 5: Footprint Recommendation Datasheet 9 Revision 2.1 2021-02-22 BGA123N6 Ultra Low Current Low Noise Amplifier for GNSS Applications Package Information Figure 6: Marking Specification (top view) Table 8: Monthly Date Code Marking Month 2015 2016 2017 2018 2019 2020 2021 2022 2023 2024 2025 2026 1 a p A P a p A P a p A P 2 b q B Q b q B Q b q B Q 3 c r C R c r C R c r C R 4 d s D S d s D S d s D S 5 e t E T e t E T e t E T 6 f u F U f u F U f u F U 7 g v G V g v G V g v G V 8 h x H X h x H X h x H X 9 j y J Y j y J Y j y J Y 10 k z K Z k z K Z k z K Z 11 l 2 L 4 l 2 L 4 l 2 L 4 12 n 3 N 5 n 3 N 5 n 3 N 5 Figure 7: PG-TSNP-6-2 Carrier Tape Datasheet 10 Revision 2.1 2021-02-22 BGA123N6 Ultra Low Current Low Noise Amplifier for GNSS Applications Revision History – Page or Item Subjects (major changes since previous revision) Revision 2.1, 2021-02-22 Revision History 7 Datasheet Figure 2 changed to top view 11 Revision 2.1 2021-02-22 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2021-02-22 Published by Infineon Technologies AG 81726 Munich, Germany c 2021 Infineon Technologies AG. All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference Doc_Number IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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