BGA725L6E6327FTSA1

BGA725L6 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems (GNSS) in ultra small package with 0.77mm² footprint Data Sheet Revision 2.0, 2012-03-09 Preliminary RF & Protection Devices Edition 2012-03-09 Published by Infineon Technologies AG 81726 Munich, Germany © 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA725L6 Revision History Page or Item Subjects (major changes since previous revision) Revision 2.0, 2012-03-09 all “Target” status changed to “Preliminary” 7 Marking code changed: C 7, 10, 11 Electrical Characteristics adjusted Revision 1.0, 2011-07-05 all Initial version Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANI ZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2011-11-11 Preliminary Data Sheet 3 Revision 2.0, 2012-03-09 BGA725L6 Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 1 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 3 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4 Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Preliminary Data Sheet 4 Revision 2.0, 2012-03-09 BGA725L6 List of Figures List of Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Application Schematic BGA725L6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Drawing of Application Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Application Board Cross-Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 TSLP-6-2 Package Outline (top, side and bottom views) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Footprint TSLP-6-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Marking Layout (top view). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Tape & Reel Dimensions (reel diameter 180 mm, pieces/reel 15000) . . . . . . . . . . . . . . . . . . . . . . 15 Preliminary Data Sheet 5 Revision 2.0, 2012-03-09 BGA725L6 List of Tables List of Tables Table 1 Table 2 Table 3 Table 4 Table 5 Table 6 Pin Definition and Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Electrical Characteristics: TA = 25 °C, VCC = 1.8 V, VPON,ON = 1.8 V, VPON,OFF = 0 V, f = 1550 - 1615 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Electrical Characteristics: TA = 25 °C, VCC = 2.8 V, VPON,ON = 2.8 V, VPON,OFF = 0 V, f = 1550 - 1615 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Bill of Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Preliminary Data Sheet 6 Revision 2.0, 2012-03-09 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems (GNSS) in ultra small package with 0.77mm² footprint BGA725L6 Features • • • • • • • • • • • • • • High insertion power gain: 20.0 dB Out-of-band input 3rd order intercept point: -2 dBm Input 1 dB compression point: -15 dBm Low noise figure: 0.65 dB Low current consumption: 3.6 mA Operating frequencies: 1550 - 1615 MHz Supply voltage: 1.5 V to 3.6 V Digital on/off switch (1V logic high level) Ultra small TSLP-6-2 leadless package (footprint: 0.7 x 1.1 mm2) B7HF Silicon Germanium technology RF output internally matched to 50 Ω Only 1 external SMD component necessary 2kV HBM ESD protection (including AI-pin) Pb-free (RoHS compliant) package Application • Ideal for all Global Navigation Satellite Systems (GNSS) like GPS, GLONASS, Beidou, Galileo and others. VCC PON AI AO ESD GND GNDRF BGA 725L 6_Blockdiagram .vsd Figure 1 Block Diagram Product Name Marking Package BGA725L6 D TSLP-6-2 Preliminary Data Sheet 7 Revision 2.0, 2012-03-09 BGA725L6 Features Description The BGA725L6 is a front-end low noise amplifier for Global Navigation Satellite Systems (GNSS) from 1550 MHz to 1615 MHz like GPS, GLONASS, Beidou, Galileo and others. The LNA provides 20.0 dB gain and 0.65 dB noise figure at a current consumption of 3.6 mA in the application configuration described in Chapter 3. The BGA725L6 is based upon Infineon Technologies‘ B7HF Silicon Germanium technology. It operates from 1.5 V to 3.6 V supply voltage. Pin Definition and Function Table 1 Pin Definition and Function Pin No. Name Function 1 GND General ground 2 VCC DC supply 3 AO LNA output 4 GNDRF LNA RF ground 5 AI LNA input 6 PON Power on control Preliminary Data Sheet 8 Revision 2.0, 2012-03-09 BGA725L6 Maximum Ratings 1 Maximum Ratings Table 2 Maximum Ratings Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Voltage at pin VCC VCC -0.3 – 3.6 V 1) Voltage at pin AI VAI -0.3 – 0.9 V – Voltage at pin AO VAO -0.3 – VCC + 0.3 V – Voltage at pin PON VPON -0.3 – VCC + 0.3 V – Voltage at pin GNDRF VGNDRF -0.3 – 0.3 V – Current into pin VCC ICC – – 20 mA – RF input power PIN – – 0 dBm – Total power dissipation, Ptot – – 72 mW – Junction temperature TJ – – 150 °C – Ambient temperature range TA -40 – 85 °C – Storage temperature range TSTG -65 – 150 °C – ESD capability all pins VESD_HBM – – 2000 V according to JESD22A-114 TS < 123 °C2) 1) All voltages refer to GND-Node unless otherwise noted 2) TS is measured on the ground lead at the soldering point Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Thermal Resistance Table 3 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point RthJS 380 1) For calculation of RthJA please refer to Application Note Thermal Resistance K/W 1) Preliminary Data Sheet 9 Revision 2.0, 2012-03-09 BGA725L6 Electrical Characteristics 2 Electrical Characteristics Table 4 Electrical Characteristics:1) TA = 25 °C, VCC = 1.8 V, VPON,ON = 1.8 V, VPON,OFF = 0 V, f = 1550 - 1615 MHz (GPS / Glonass / Beidou / Galileo) Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Supply voltage VCC 1.5 – 3.6 V – Supply current ICC – 3.6 – mA ON-mode – 0.2 3 μA OFF-mode 1.0 – Vcc V ON-mode 0 – 0.4 V OFF-mode – 5 – μA ON-mode – – 1 μA OFF-mode |S21| – 20.0 – dB – NF – 0.65 – dB ZS = 50 Ω Input return loss RLin – 14 – dB – Output return loss RLout – 20 – dB – 1/|S12| – 37 – dB – tS – 5 – μs OFF- to ON-mode – 5 – μs ON- to OFF-mode Inband input 1dB-compression IP1dB point – -16 – dBm – Inband input 3rd-order intercept IIP3 point4) – -6 – dBm f1 = 1575 MHz f2 = f1 +/-1 MHz Out-of-band input 3rd-order intercept point5) IIP3oob – -5 – dBm f1 = 1712.7 MHz f2 = 1850 MHz Stability k – >1 – Vpon Power On voltage Ipon Power On current 2 Insertion power gain Noise figure 2) 2 Reverse isolation 3) Power gain settling time 1) 2) 3) 4) 5) f = 20 MHz ... 10 GHz Based on the application described in chapter 3 PCB losses are subtracted To be within 1 dB of the final gain OFF- to ON-mode; to be within 3 dB of the final gain ON- to OFF-mode Input power = -30 dBm for each tone Input power = -20 dBm for each tone Preliminary Data Sheet 10 Revision 2.0, 2012-03-09 BGA725L6 Electrical Characteristics Table 5 Electrical Characteristics:1) TA = 25 °C, VCC = 2.8 V, VPON,ON = 2.8 V, VPON,OFF = 0 V, f = 1550 - 1615 MHz (GPS / Glonass / Beidou / Galileo) Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Supply voltage VCC 1.5 – 3.6 V – Supply current ICC – 3.6 – mA ON-mode – 0.2 3 μA OFF-mode 1.0 – Vcc V ON-mode 0 – 0.4 V OFF-mode – 5 – μA ON-mode – – 1 μA OFF-mode |S21| – 20.0 – dB – NF – 0.65 – dB ZS = 50 Ω Input return loss RLin – 14 – dB – Output return loss RLout – 20 – dB – Reverse isolation 1/|S12|2 – 37 – dB – tS – 5 – μs OFF- to ON-mode – 5 – μs ON- to OFF-mode Inband input 1dB-compression IP1dB point – -15 – dBm – Inband input 3rd-order intercept IIP3 point4) – -5 – dBm f1 = 1575 MHz f2 = f1 +/-1 MHz Out-of-band input 3rd-order intercept point5) IIP3oob – -2 – dBm f1 = 1712.7 MHz f2 = 1850 MHz Stability k – >1 – Vpon Power On voltage Ipon Power On current 2 Insertion power gain Noise figure 2) 3) Power gain settling time 1) 2) 3) 4) 5) f = 20 MHz ... 10 GHz Based on the application described in chapter 3 PCB losses are subtracted To be within 1 dB of the final gain OFF- to ON-mode; to be within 3 dB of the final gain ON- to OFF-mode Input power = -30 dBm for each tone Input power = -20 dBm for each tone Preliminary Data Sheet 11 Revision 2.0, 2012-03-09 BGA725L6 Application Information 3 Application Information Application Board Configuration N1 BGA725L6 GNDRF, 4 C1 (optional) AO, 3 RFout L1 RFin VCC VCC, 2 AI, 5 C2 (optional) PON PON, 6 GND, 1 BGA 725L 6_Schematic.vsd Figure 2 Application Schematic BGA725L6 Table 6 Bill of Materials Name Value Package Manufacturer Function C1 (optional) 1nF 0402 Various DC block 1) C2 (optional) > 10nF2) 0402 Various RF bypass 3) L1 7.5nH 0402 Murata LQW type Input matching N1 BGA725L6 TSLP-6-2 Infineon SiGe LNA 1) DC block might be realized with pre-filter in GNSS applications 2) For data sheet characteristics 1μF used 3) RF bypass recommended to mitigate power supply noise A list of all application notes is available at http://www.infineon.com/gpslna.appnotes. Preliminary Data Sheet 12 Revision 2.0, 2012-03-09 BGA725L6 Application Information BGA 725 L6_Application _Board .vsd Figure 3 Drawing of Application Board Vias Vias Ro4003, 0.2mm Copper 35µm FR4,0.8mm BGA 725L6_application _board _sideview.vsd Figure 4 Application Board Cross-Section Preliminary Data Sheet 13 Revision 2.0, 2012-03-09 BGA725L6 Package Information Package Information Top view Bottom view 0.2 ±0.05 (0.05) 3 4 2 5 1 6 1.1 ±0.05 (0.05) 0.05 MAX. 0.2 ±0.05 Pin 1 marking 1) Dimension applies to plated terminals Figure 5 (0.05) 0.2 ±0.035 1) 0.2 ±0.035 1) 0.7 ±0.05 +0.01 0.39 -0.03 (0.05) 4 TSLP-6-2-PO V01 TSLP-6-2 Package Outline (top, side and bottom views) N SMD 0.4 0.4 0.25 0.25 0.4 0.4 0.25 0.25 (stencil thickness 100 µm) Copper Stencil apertures Solder mask TSLP-6-2-FP V01 Figure 6 Footprint TSLP-6-2 D Type code Pin 1 marking TS LP-6-2-MK B GA 725 Figure 7 Marking Layout (top view) Preliminary Data Sheet 14 Revision 2.0, 2012-03-09 BGA725L6 Package Information Pin 1 marking 8 1.25 0.5 2 0.85 TSLP-6-2-TP V01 Figure 8 Tape & Reel Dimensions (reel diameter 180 mm, pieces/reel 15000) Preliminary Data Sheet 15 Revision 2.0, 2012-03-09 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG