BGA824N6E6327XTSA1

BGA824N6 BGA824N6 Si li con Germanium Low Noise Ampl ifier for Global Navigation Satellite Systems (GNSS) Features • Operating frequencies: 1164 - 1615 MHz • Insertion power gain: 17.0 dB • Input 1 dB compression point: -6 dBm • Low noise figure: 0.55 dB • Low current consumption: 3.8 mA • Digital on/off switch (1V logic level high) • Ultra small TSNP-6-2 and TSNP-6-10 leadless package • RF output internally matched to 50 Ohm • Low external component count 0.7 x 1.1 mm2 Application Ideal for all Global Navigation Satellite Systems (GNSS) like GPS, GLONASS, Beidou, Galileo and others. Product Validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 Block diagram VCC AI PON AO ESD GND BGA824N6_Blockdiagram.vsd Data Sheet www.infineon.com Revision 3.4 2021-04-26 BGA824N6 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Data Sheet 2 Revision 3.4 2021-04-26 BGA824N6 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems Features 1 Features • Insertion power gain: 17.0 dB • Out-of-band input 3rd order intercept point: +7 dBm • Input 1 dB compression point: -6 dBm • Low noise figure: 0.55 dB • Low current consumption: 3.8 mA • Operating frequencies: 1164 - 1615 MHz • Digital on/off switch (1V logic level high) • Supply voltage: 1.5 V to 3.6 V • Ultra small TSNP-6-2 and TSNP-6-10 leadless package (footprint: 0.7 x 1.1 mm2) • B7HF Silicon Germanium technology • RF output internally matched to 50 Ohm • Low external component count • 2kV HBM ESD protection (including AI-pin) • Pb-free (RoHS compliant) package VCC PON AI AO ESD GND BGA824N6_Blockdiagram.vsd Figure 1 Block Diagram Product Name Marking Package BGA824N6 F TSNP-6-2/TSNP-6-10 Data Sheet 3 Revision 3.4 2021-04-26 BGA824N6 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems Features Description The BGA824N6 is a front-end low noise amplifier for Global Navigation Satellite Systems (GNSS) from 1164 MHz to 1615 MHz like GPS, GLONASS, Beidou, Galileo and others. The LNA provides 17.0 dB gain and 0.55 dB noise figure at a current consumption of 3.8 mA in the application configuration described in Chapter 4. The BGA824N6 is based upon Infineon Technologies‘ B7HF Silicon Germanium technology. It operates from 1.5 V to 3.6 V supply voltage. Pin Definition and Function Table 1 Pin Definition and Function Pin No. Name Function 1 GND Ground 2 VCC DC supply 3 AO LNA output 4 GND Ground 5 AI LNA input 6 PON Power on control Data Sheet 4 Revision 3.4 2021-04-26 BGA824N6 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems Maximum Ratings 2 Maximum Ratings Table 2 Maximum Ratings Parameter Symbol Values Min. Typ. Max. Unit Note or Test Condition Voltage at pin VCC VCC -0.3 – 3.6 V 1) Voltage at pin AI VAI -0.3 – 0.9 V – Voltage at pin AO VAO -0.3 – VCC + 0.3 V – Voltage at pin PON VPON -0.3 – VCC + 0.3 V – Voltage at pin GNDRF VGNDRF -0.3 – 0.3 V – Current into pin VCC ICC – – 23 mA – RF input power PIN – – 25 dBm – Total power dissipation, TS < 148 °C2) Ptot – – 60 mW – Junction temperature TJ – – 150 °C – Ambient temperature range TA -40 – 85 °C – Storage temperature range TSTG -55 – 150 °C – ESD capability all pins VESD_HBM -2000 - +2000 V according to JS001 1) All voltages refer to GND-Node unless otherwise noted 2) TS is measured on the ground lead at the soldering point Attention: Stresses above the max. values listed here may cause permanent damage to the device. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Exposure to conditions at or below absolute maximum rating but above the specified maximum operation conditions may affect device reliability and life time. Functionality of the device might not be given under these conditions. Thermal Resistance Table 3 Thermal Resistance Parameter Junction - soldering point 1) Symbol Value Unit RthJS 25 K/W 1) For calculation of RthJA please refer to Application Note Thermal Resistance Data Sheet 5 Revision 3.4 2021-04-26 BGA824N6 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems Electrical Characteristics 3 Electrical Characteristics Table 4 Electrical Characteristics f = 1550 - 1615 MHz, VCC = 1.8V1) TA = 25 °C, VCC = 1.8 V, VPON,ON = 1.8 V, VPON,OFF = 0 V, f = 1550 - 1615 MHz Parameter Symbol Values Min. Typ. Max. Unit Note or Test Condition Supply voltage VCC 1.5 1.8 3.6 V – Supply current ICC – 3.8 4.8 mA ON-mode – 0.2 3 µA OFF-mode 1.0 – Vcc V ON-mode 0 – 0.4 V OFF-mode – 5 10 µA ON-mode – – 1 µA OFF-mode Power On voltage Power On current VPON IPON 2 Insertion power gain f = 1575 MHz |S21| 16.0 17.0 18.0 dB – Noise figure2) f = 1575 MHz NF – 0.55 1.1 dB – Input return loss3) f = 1575 MHz RLIN 10 14 – dB – Output return loss3) f = 1575 MHz RLOUT 10 17 – dB – Reverse isolation3) f = 1575 MHz 1/|S12|2 19 23 – dB – Power gain settling time4)5) tS – 5 8 µs OFF- to ON-mode – 5 8 µs ON- to OFF-mode – 1.2 3 µs OFF- to ON-mode6) – 0.9 3 µs ON- to OFF-mode6) Inband input 1dB-compression IP1dB point3) f = 1575 MHz -13 -9 – dBm – Inband input 3rd-order intercept point3)7) IIP3 -3 +2 – dBm f1 = 1575 MHz f2 = f1 +/- 1 MHz Out-of-band input 3rd-order intercept point5)8) IIP3OOB +2 +7 – dBm f1 = 1712.7 MHz f2 = 1850 MHz Stability5) k >1 – – 1) 2) 3) 4) 5) 6) 7) 8) f = 20 MHz ... 10 GHz Based on the application described in Figure 2 in Chapter 4 PCB losses are subtracted Verification based on AQL; not 100% tested in production To be within 1 dB of the final gain OFF- to ON-mode; to be within 3 dB of the final gain ON- to OFF-mode Guaranteed by device design; not tested in production 120 pF DC block capacitor at RF input Input power = -30 dBm for each tone Input power = -20 dBm for each tone Data Sheet 6 Revision 3.4 2021-04-26 BGA824N6 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems Electrical Characteristics Table 5 Electrical Characteristics f = 1550 - 1615 MHz, VCC = 2.8V1) TA = 25 °C, VCC = 2.8 V, VPON,ON = 2.8 V, VPON,OFF = 0 V, f = 1550 - 1615 MHz Parameter Symbol Values Min. Typ. Max. Unit Note or Test Condition Supply voltage VCC 1.5 2.8 3.6 V – Supply current ICC – 3.9 4.9 mA ON-mode – 0.2 3 µA OFF-mode 1.0 – Vcc V ON-mode 0 – 0.4 V OFF-mode – 10 15 µA ON-mode – – 1 µA OFF-mode Power On voltage Power On current VPON IPON 2 Insertion power gain f = 1575 MHz |S21| 16.1 17.1 18.1 dB – Noise figure2) f = 1575 MHz NF – 0.55 1.1 dB – Input return loss3) f = 1575 MHz RLIN 10 15 – dB – Output return loss3) f = 1575 MHz RLOUT 10 18 – dB – Reverse isolation3) f = 1575 MHz 1/|S12|2 19 23 – dB – Power gain settling time4)5) tS – 5 8 µs OFF- to ON-mode – 5 8 µs ON- to OFF-mode – 1.2 3 µs OFF- to ON-mode6) – 0.9 3 µs ON- to OFF-mode6) Inband input 1dB-compression IP1dB point3) f = 1575 MHz -10 -6 – dBm – Inband input 3rd-order intercept point3)7) IIP3 -2 +3 – dBm f1 = 1575 MHz f2 = f1 +/- 1 MHz Out-of-band input 3rd-order intercept point5)8) IIP3OOB +2 +7 – dBm f1 = 1712.7 MHz f2 = 1850 MHz Stability5) k >1 – – 1) 2) 3) 4) 5) 6) 7) 8) f = 20 MHz ... 10 GHz Based on the application described in Figure 2 in Chapter 4 PCB losses are subtracted Verification based on AQL; not 100% tested in production To be within 1 dB of the final gain OFF- to ON-mode; to be within 3 dB of the final gain ON- to OFF-mode Guaranteed by device design; not tested in production 120 pF DC block capacitor at RF input Input power = -30 dBm for each tone Input power = -20 dBm for each tone Data Sheet 7 Revision 3.4 2021-04-26 BGA824N6 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems Electrical Characteristics Table 6 Electrical Characteristics f = 1164 - 1300 MHz, VCC = 1.8V1) TA = 25 °C, VCC = 1.8 V, VPON,ON = 1.8 V, VPON,OFF = 0 V, f = 1164 - 1300 MHz Parameter Symbol Values Min. Typ. Max. Unit Note or Test Condition Supply voltage VCC 1.5 1.8 3.6 V – Supply current ICC – 3.8 4.8 mA ON-mode – 0.2 3 µA OFF-mode 1.0 – Vcc V ON-mode 0 – 0.4 V OFF-mode – 5 10 µA ON-mode – – 1 µA OFF-mode Power On voltage Power On current VPON IPON 2 Insertion power gain f = 1214 MHz |S21| 16.4 17.9 19.4 dB – Noise figure2) f = 1214 MHz NF – 0.70 1.25 dB – Input return loss3) f = 1214 MHz RLIN 10 15 – dB – Output return loss3) f = 1214 MHz RLOUT 10 18 – dB – Reverse isolation3) f = 1214 MHz 1/|S12|2 19 25 – dB – Power gain settling time4)5) tS – 5 8 µs OFF- to ON-mode – 5 8 µs ON- to OFF-mode – 1.2 3 µs OFF- to ON-mode6) – 0.9 3 µs ON- to OFF-mode6) Inband input 1dB-compression IP1dB point3) f = 1214 MHz -16 -12 – dBm – Inband input 3rd-order intercept point3)7) IIP3 -11 -6 – dBm f1 = 1214 MHz f2 = f1 +/- 1 MHz Out-of-band input 3rd-order intercept point5)8) IIP3OOB -3 +1.3 dBm f1 = 1850 MHz f2 = 2500 MHz Stability5) k >1 – 1) 2) 3) 4) 5) 6) 7) 8) – f = 20 MHz ... 10 GHz Based on the application described in Figure 3 in Chapter 4 PCB losses are subtracted Verification based on AQL; not 100% tested in production To be within 1 dB of the final gain OFF- to ON-mode; to be within 3 dB of the final gain ON- to OFF-mode Guaranteed by device design; not tested in production 120 pF DC block capacitor at RF input Input power = -30 dBm for each tone Input power = -25 dBm for each tone Data Sheet 8 Revision 3.4 2021-04-26 BGA824N6 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems Electrical Characteristics Table 7 Electrical Characteristics f = 1164 - 1300 MHz, VCC = 2.8V1) TA = 25 °C, VCC = 2.8 V, VPON,ON = 2.8 V, VPON,OFF = 0 V, f = 1164 - 1300 MHz Parameter Symbol Values Min. Typ. Max. Unit Note or Test Condition Supply voltage VCC 1.5 2.8 3.6 V – Supply current ICC – 3.9 4.8 mA ON-mode – 0.2 3 µA OFF-mode 1.0 – Vcc V ON-mode 0 – 0.4 V OFF-mode – 10 15 µA ON-mode – – 1 µA OFF-mode Power On voltage Power On current VPON IPON 2 Insertion power gain f = 1214 MHz |S21| 16.5 18.0 19.5 dB – Noise figure2) f = 1214 MHz NF – 0.70 1.25 dB – Input return loss3) f = 1214 MHz RLIN 10 16 – dB – Output return loss3) f = 1214 MHz RLOUT 10 18 – dB – Reverse isolation3) f = 1214 MHz 1/|S12|2 19 26 – dB – Power gain settling time4)5) tS – 5 8 µs OFF- to ON-mode – 5 8 µs ON- to OFF-mode – 1.2 3 µs OFF- to ON-mode6) – 0.9 3 µs ON- to OFF-mode6) Inband input 1dB-compression IP1dB point3) f = 1214 MHz -13 -9 – dBm – Inband input 3rd-order intercept point3)7) IIP3 -10 -5 – dBm f1 = 1214 MHz f2 = f1 +/- 1 MHz Out-of-band input 3rd-order intercept point5)8) IIP3OOB -3 +1.3 dBm f1 = 1850 MHz f2 = 2500 MHz Stability5) k >1 – 1) 2) 3) 4) 5) 6) 7) 8) – f = 20 MHz ... 10 GHz Based on the application described in Figure 3 in Chapter 4 PCB losses are subtracted Verification based on AQL; not 100% tested in production To be within 1 dB of the final gain OFF- to ON-mode; to be within 3 dB of the final gain ON- to OFF-mode Guaranteed by device design; not tested in production 120 pF DC block capacitor at RF input Input power = -30 dBm for each tone Input power = -25 dBm for each tone Data Sheet 9 Revision 3.4 2021-04-26 BGA824N6 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems Application Information 4 Application Information Application Board Configuration f = 1550 - 1615 MHz N1 BGA824N6 AO, 3 GNDRF, 4 C1 (optional) RFout L1 RFin PON VCC VCC, 2 AI, 5 C2 (optional) PON, 6 GND, 1 BGA824N6_Schematic.vsd Figure 2 Application Schematic BGA824N6 f = 1550 - 1615 MHz Table 8 Bill of Materials Name Value Package Manufacturer Function C1 (optional) 1nF 0402 Various DC block1) C2 (optional) ≥ 10nF2) 0402 Various RF bypass 3) L1 6.8nH 0402 Murata LQW type Input matching N1 BGA824N6 TSNP-6-2 and TSNP- Infineon 6-10 SiGe LNA 1) DC block might be realized with pre-filter in GNSS application 2) For data sheet characteristics 1µF used 3) RF bypass recommended to mitigate power supply noise A list of all application notes is available at http://www.infineon.com/gpslna.appnotes Data Sheet 10 Revision 3.4 2021-04-26 BGA824N6 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems Application Information Application Board Configuration f = 1164 - 1300 MHz N1 BGA824N6 RFout AO, 3 GNDRF, 4 C1 (optional) L2 L1 C3 RFin PON VCC VCC, 2 AI, 5 C2 (optional) GND, 1 PON, 6 BGA824N6_Schematic_L2L5.vsd Figure 3 Application Schematic BGA824N6 f = 1164 - 1300 MHz Table 9 Bill of Materials Name Value Package Manufacturer Function C1 (optional) 1nF 0402 Various DC block1) C2 (optional) ≥ 10nF2) 0402 Various RF bypass 3) C3 3.9pF 0402 Various Output matching L1 12nH 0402 Murata LQW type Input matching L2 3.9nH 0402 Murata LQW type Output matching N1 BGA824N6 TSNP-6-2 and TSNP- Infineon 6-10 SiGe LNA 1) DC block might be realized with pre-filter in GNSS application 2) For data sheet characteristics 1µF used 3) RF bypass recommended to mitigate power supply noise A list of all application notes is available at http://www.infineon.com/gpslna.appnotes Data Sheet 11 Revision 3.4 2021-04-26 BGA824N6 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems Application Information BGAx24N6_Application_Board.vsd Figure 4 Drawing of Application Board Vias Vias Ro4003, 0.2mm Copper 35µm FR4,0.8mm BGA824 N6_application _board _sideview.vsd Figure 5 Data Sheet Application Board Cross-Section 12 Revision 3.4 2021-04-26 BGA824N6 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems Package Information 5 Package Information Figure 6 TSNP-6-2 Package Outline (top, side and bottom views) Figure 7 TSNP-6-10 Package Outline (top, side and bottom views) Data Sheet 13 Revision 3.4 2021-04-26 BGA824N6 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems Package Information Figure 8 Footprint Recommendation TSNP-6-2 and TSNP-6-10 TSNP-6-2_MK.vsd Figure 9 Marking Layout TSNP-6-2 (top view) TSNP-6-10_MK.vsd Figure 10 Data Sheet Marking Layout TSNP-6-10 (top view) 14 Revision 3.4 2021-04-26 BGA824N6 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems Package Information Figure 11 Date Code Marking TSNP-6-2 and TSNP-6-10 Figure 12 Tape & Reel Dimensions TSNP-6-2 (reel diameter 180 mm, pieces/reel 15000) Data Sheet 15 Revision 3.4 2021-04-26 BGA824N6 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems Package Information Pin 1 marking TSNP-6-10_TP.vsd Figure 13 Data Sheet Tape & Reel Dimensions TSNP-6-10 (reel diameter 180 mm, pieces/reel 12000) 16 Revision 3.4 2021-04-26 BGA824N6 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems Revision History Page or Item Subjects (major changes since previous revision) Revision 3.4, 2021-04-26 16 Data Sheet Carrier Tape Drawing updated 17 Revision 3.4 2021-04-26 Please read the Important Notice and Warnings at the end of this document Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2021-04-26 Published by Infineon Technologies AG 81726 Munich, Germany © 2021 Infineon Technologies AG. All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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