BGA9H1BN6327XTSA1

BGA9H1BN6 H i g h ba n d H i g h Pe r f o r m a n ce L N A w i t h Po w e r-S a v e - M o d e Features • Operating frequencies: 2.3 to 2.7 GHz • Insertion power gain: 20.3 dB • Insertion loss in bypass mode: 4.3 dB • Low noise figure: 0.6 dB • Low current consumption: Min. 2.2 mA • Multi-state control to save power 0.7 x 1.1 mm2 Potential Applications The BGA9H1BN6 is designed for 4G and 5G applications covering 3GPP bands between 2.3 and 2.7 GHz (optimized for band n41). As a result of a high gain and an ultra-low noise figure performance of the LNA the system sensitivity is significantly improved compared to conventional LNAs. The GPIO interface provides a straightforward control over multiple operation modes. Next to the high gain mode and bypass mode, a power-save and a high performance mode can be selected to increase system dynamic. Due to the low-power mode with 2.2 mA current consumption and 1.2V operation voltage the overall power consumption is extremely low. The BGA9H1BN6 is suitable to be implemented in small battery powered devices like wearables or smartphones. Product Validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Block diagram VCC CTRL1 AI CTRL2 AO ESD GND Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document Revision 2.0 2021-10-14 BGA9H1BN6 Highband High Performance LNA with Power-Save-Mode Table of Contents Table of Contents Table of Contents 1 1 2 Features 2 Maximum Ratings 3 3 Electrical Characteristics 4 4 Application Information 6 5 Package Information 8 Datasheet 1 Revision 2.0 2021-10-14 BGA9H1BN6 Highband High Performance LNA with Power-Save-Mode Features 1 Features • Insertion power gain: Max. 20.3 dB • Insertion loss in bypass mode: 4.3 dB • Low noise figure: 0.6 dB • Low current consumption: Min. 2.2 mA • Operating frequencies: 2.3 to 2.7 GHz • Multi-state control • Supply voltage: 1.1 V to 3.3 V • Ultra small TSNP-6-10 leadless package (footprint: 0.7 x 1.1 x 0.37 mm3 ) • Silicon germanium BiCMOS technology • RF output internally matched to 50 Ohm • Only one external matching component • RoHS and WEEE compliant package Description The BGA9H1BN6 is a low noise amplifier for 4G and 5G which covers a wide frequency range from 2.3 GHz to 2.7 GHz. The LNA provides up to 20.3 dB gain and 0.6 dB noise figure at a current consumption of 5.5 mA in the application configuration described in Chapter 4. With the multi-state feature the gain can be adjusted to increase system dynamic and covers a powersaving option. The two-line-state control is fully backwards compatible to a standard GPIO controlled LNA. The BGA9H1BN6 supports ultra-low bypass current of 0.6 µA and 1.2 V operating voltage to reduce power consumption. It operates from 1.1 V to 3.3 V supply voltage over temperature. The compact 6 pin TSNP-6 package with the dimension of 1.1 x 0.7 mm2 helps to save space on the PCB. VCC CTRL1 AI CTRL2 AO ESD GND Figure 1: BGA9H1BN6 Block diagram Product Name Marking Package BGA9H1BN6 H PG-TSNP-6-10 Datasheet 2 Revision 2.0 2021-10-14 BGA9H1BN6 Highband High Performance LNA with Power-Save-Mode Maximum Ratings 2 Maximum Ratings Table 1: Maximum Ratings Parameter Symbol Unit Note / Test Condition Min. Typ. Max. Voltage at pin VCC V CC -0.3 – 3.6 V 1 Voltage at pin AI V AI – – – V 2 Voltage at pin AO V AO -0.3 – V CC + 0.3 V V CC + 0.3 must not exceed 3.6 V Voltage at pins CTRL1/CTRL2 V CTRL1,2 -0.3 – V CC + 0.3 V – Voltage at pin GND V GND -0.3 – 0.3 V – Current into pin VCC ICC – – 27 mA – RF input power PIN – – +25 dBm – Total power dissipation Ptot – – 100 mW Junction temperature TJ – – 150 ◦ C – TA -40 – 85 ◦ C – Storage temperature range T STG -55 – 150 ◦ C – ESD capability, HBM V ESD_HBM -2000 – 2000 V Ambient temperature range Values 3 1 All voltages refer to GND-Nodes unless otherwise noted 2 No external DC voltage allowed 3 Human Body Model ANSI/ESDA/JEDEC JS-001 (R = 1.5 kΩ, C = 100 pF) Warning: Stresses above the max. values listed here may cause permanent damage to the device. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Exposure to conditions at or below absolute maximum rating but above the specified maximum operation conditions may affect device reliability and life time. Functionality of the device might not be given under these conditions. Datasheet 3 Revision 2.0 2021-10-14 BGA9H1BN6 Highband High Performance LNA with Power-Save-Mode Electrical Characteristics 3 Electrical Characteristics Table 3: Electrical Characteristics at T A = 25 ◦C, V CC = 1.8 V, V CTRL1/2 = 0/1.8 V Parameter1 Symbol Supply Voltage V CC Supply Current ICC Insertion power gain f = 2600 MHz Noise Figure f = 2600 MHz, ZS = 50Ω |S21 |2 NF 2 Input return loss f = 2600 MHz Output return loss f = 2600 MHz Reverse Isolation f = 2600 MHz Inband input 1dB-compression point f = 2600 MHz Inband input 3rd -order intercept 3 point Stability RLIN RLOUT 1/|S12 |2 IP1dB IIP3 k Values Unit Note / Test Condition Min. Typ. Max. 1.1 1.8 3.3 V ON-Mode 4.2 5.5 6.8 mA High performance mode 3.2 4.2 5.2 mA High gain mode 1.6 2.2 2.8 mA Power save mode 0.0003 0.0006 0.001 mA Bypass mode 18.8 20.3 21.8 dB High performance mode 18.0 19.5 21.0 dB High gain mode 15.1 16.6 18.1 dB Power save mode -5.6 -4.5 -3.6 dB Bypass mode – 0.6 1.1 dB High performance mode – 0.6 1.1 dB High gain mode – 0.8 1.3 dB Power save mode – 4.6 5.6 dB Bypass mode 9 13 – dB High performance mode 8 12 – dB High gain mode 5 8 – dB Power save mode 4 6 – dB Bypass mode 10 22 – dB High performance mode 10 21 – dB High gain mode 10 20 – dB Power save mode 3 5 – dB Bypass mode 25 30 – dB High performance mode 24 29 – dB High gain mode 24 29 – dB Power save mode 3.6 4.6 – dB Bypass mode -21 -17 – dBm High performance mode -20 -16 – dBm High gain mode -14 -10 – dBm Power save mode +1 +5 – dBm Bypass mode -12 -7 – dBm High performance mode -12 -7 – dBm High gain mode -16 -11 – dBm Power save mode +17 +22 – dBm Bypass mode >1 – – f = 20 MHz - 10 GHz 1 Based on application described in chapter 4 2 Can be tuned by using different external matching components 3 Input power = −30 dBm for each tone / −15 dBm for bypass mode, f Datasheet 1 = 2600 MHz, f 2 = f 1 + 1 MHz 4 Revision 2.0 2021-10-14 BGA9H1BN6 Highband High Performance LNA with Power-Save-Mode Electrical Characteristics Table 4: Switching times at T A = 25 ◦C, V CC = 1.8 V, V CTRL1/2 = 0/1.8 V, f = 2300 – 2700 MHz Parameter1 Symbol Min. Typ. Max. Power up settling time 2 tPUP – –