BGB540E6327

Data sheet, BGB540, Sept. 2002 BGB540 Active Biased RF Transistor MMIC Wireless Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2002-09-11 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGB540 Data sheet Revision History: 2002-09-11 Previous Version: 2001-08-16 Page Subjects (major changes since last revision) 4-9 RF parameters and SPICE model updated Preliminary status removed For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://www.infineon.com Active Biased RF Transistor BGB540 Features • • • • • • Gms= 18dB at 1.8GHz Small SOT343 package Current easy adjustable by an external resistor Open collector output Typical supply voltage: 1.4-4.3V SIEGET®-45 technology Applications • For high gain low noise amplifiers • Ideal for wideband applications, cellular phones, cordless telephones, SAT-TV and high frequency oscillators Bias,4 C,3 Description SIEGET®-45 NPN Transistor with integrated biasing for high gain low noise figure applications. IC can be controlled using IBias according to IC=10*IBias . Bias B,1 E,2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Marking Chip BGB540 SOT343 MCs T0559 Data sheet 4 2002-09-11 BGB540 Maximum Ratings Parameter Maximum collector-emitter voltage Maximum collector current Symbol Value Unit VCE 4.5 V IC 80 mA Maximum bias current IBias 8 mA Maximum emitter-base voltage VEB 1.2 V Maximum base current IB 0.7 mA Ptot 250 mW Tj 150 °C Ambient temperature TA -65 ... +150 °C Storage temperature TSTG -65 ... +150 °C Thermal resistance: junction-soldering point Rth JS 300 K/W Total power dissipation, TS < 75°C1) Junction temperature Notes: For detailed symbol description refer to figure 1. 1) TS is measured on the emitter lead at the soldering point to the PCB IBias IC Bias,4 C,3 Bias VCE B,1 VEB IB E,2 Fig. 1: Symbol definition Data sheet 5 2002-09-11 BGB540 ID RBias Bias-T IBias Bias,4 VD RF Out IC C,3 Bias B,1 RF In E,2 N.C. Bias-T Fig. 2: Test Circuit for Electrical Characteristics and S-Parameter Electrical Characteristics at TA=25°C (measured in test circuit specified in fig. 2) Parameter Symbol Maximum stable power gain VD=2V, Ic=20mA, f=1.8GHz min. typ. max. Unit Gms 18 dB Insertion power gain VD=2V, Ic=20mA f=0.9GHz f=1.8GHz |S21|2 21.5 16 dB Insertion loss VD=2V, Ic=0mA f=0.9GHz f=1.8GHz IL 21 16 dB Noise figure (ZS=50Ω) VD=2V, Ic=5mA f=0.9GHz f=1.8GHz F50Ω 1.15 1.3 dB Output power at 1dB gain compression VD=2V, Ic=20mA, f=1.8GHz ZL=ZLOPT ZL=50Ω P-1dB Output third order intercept point VD=2V, Ic=20mA, f=1.8GHz ZL/S=ZL/SOPT ZL/S=50Ω OIP3 Collector-base capacitance VCB=2V, f=1MHz CCB Current ratio IC/IBias IBias=0.5mA, VD=3V CR Data sheet dBm 12 10 dBm 22 20 6 0.15 7 10 pF 13 2002-09-11 BGB540 S-Parameter VD=2V, IC=20mA (see Electrical Characteristics for conditions) Frequency S11 [GHz] Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang 0.1 0.5387 -17.8 35.6280 158.9 0.0064 75.4 0.9334 -11.8 0.2 0.4744 -35.8 31.0390 142.8 0.0141 76.8 0.8357 -20.9 0.4 0.3724 -60.7 22.5520 120.2 0.0241 75.4 0.6670 -29.7 0.6 0.2992 -74.7 16.8920 108.1 0.0335 75.3 0.5672 -31.0 0.8 0.2453 -88.7 13.3320 98.2 0.0439 74.7 0.5066 -33.0 1.0 0.2205 -100.1 10.9000 91.2 0.0547 73.4 0.4675 -33.8 1.2 0.1900 -111.0 9.1938 85.5 0.0663 71.5 0.4406 -35.1 1.4 0.1765 -122.0 7.9452 80.6 0.0785 69.3 0.4209 -36.8 1.6 0.1648 -132.7 6.9615 76.3 0.0901 66.5 0.4013 -38.7 1.8 0.1660 -142.5 6.2388 72.2 0.1014 63.5 0.3822 -41.5 2.0 0.1737 -153.1 5.6320 68.2 0.1125 60.5 0.3519 -43.6 3.0 0.1966 175.9 3.8040 51.6 0.1655 44.9 0.2868 -57.0 4.0 0.2486 156.8 2.9394 36.2 0.2151 29.1 0.2398 -76.1 5.0 0.3451 136.5 2.4109 20.7 0.2439 9.1 0.1506 -111.0 6.0 0.4645 117.1 2.0318 5.5 0.2362 -7.1 0.1196 168.0 Device Current I D = f(VD, RBias) 60 50 270Ω 40 I D [mA] 680Ω 30 1.5kΩ 20 2.7kΩ 10 4.7kΩ 8.2kΩ 0 0 1 2 3 4 VD [V] Data sheet 7 2002-09-11 BGB540 Power Gain |S21|2, Gma, Gms = f(f) V = 3V, I = 20mA D Power Gain Gma, Gms = f(f) V = 3V C D 40 40 35 35 30 30 Gms 25 Gma, Gms [dB] |S21|2, Gma, Gms [dB] 0.3GHz 20 15 25 0.9GHz 20 1.9GHz 15 2.4GHz G 2 |S21| ma 10 10 5 5 0 0 0 1 2 3 4 5 6 0 10 20 30 40 50 60 50 60 I [mA] Frequency [GHz] C Matching |S11|, |S22| = f(f) VD = 3V, I C = 20mA Output Compression Point P−1dB = f(IC) V = 3V, f = 1.8GHz, Z = 50Ω D L 0 20 18 −5 16 S11 14 P−1dB [dBm] |S11|, |S22| [dB] −10 −15 S22 12 10 8 −20 6 4 −25 2 −30 0 0 1 2 3 4 5 6 0 Data sheet 10 20 30 40 IC [mA] Frequency [GHz] 8 2002-09-11 BGB540 SPICE Model BGB540-Chip 4 3 R2 R1 Q2 Q1 2 Q1 T513 Q2 T513 (area factor: 0.1) R1 2.7kΩ R2 27kΩ 1 Transistor Chip Data T513 (Berkley-SPICE 2G.6 Syntax) .MODEL T513 NPN( + IS = 8.2840e-17 + IKF = 0.48731 + NR = 1.0 + NC = 1.1720 + RE = 0.31111 + MJE = 0.46576 + ITF = 0.001 + MJC = 0.30232 + VJS = 0.75 + XTI = 3 BF = 107.5 ISE = 1.115e-11 VAR = 19.705 RBM = 1.3 RC = 4.0 TF = 6.76e-12 PTF = 0 XCJC = 0.3 MJS = 0 FC = 0.73234) NF = 1.0 NE = 3.19 IKR = 0.02 IRB = 0.00072983 CJE = 1.8063e-15 XTF = 0.4219 CJC = 2.34e-13 TR = 2.324E-09 XTB = 0 VAF = 28.383 BR = 5.5 ISC = 1.9237e-17 RB = 5.4 VJE = 0.8051 VTF = 0.23794 VJC = 0.81969 CJS= 0 EG = 1.11 Package Equivalent Circuit L2 Bias C1 L1 CCB C3 C2 4 LBO LBI 1 B BGB540 Chip LCI LCO 3 C 2 CBE CCE LEI LEO 0.36 nH LB0 0.42 nH LEI 0.35 nH LEO 0.27 nH LCI 0.56 nH LCO 0.58 nH L1 0.5 nH L2 0.58 nH CBE 120 fF CCB 6.9 fF CCE 134 fF C1 90 fF C2 120 fF C3 15 fF Valid up to 3GHz E Data sheet LBI 9 2002-09-11 BGB540 Typical Application Voltage Supply DC Bypass L RF Out VBias RBias IC C IBias 4 3 BGB540 1 IC=10*IBias 2 C This proposal demonstrates how to use the BGB540 as a Self-Biased Transistor. As for a discrete Transistor matching circuits have to be applied. A good starting point for various applications are the Application Notes provided for the BFP540. RF In Fig. 3: Typical application circuit Package Outline 2 ±0.2 0.9 ±0.1 B 1.3 ±0.1 0.20 M 0.1 max B 0.3 1 2 +0.2 acc. to DIN 6784 2.1±0.1 3 1.25 ±0.1 A 4 0.15 +0.1 -0.05 +0.1 0.6 +0.1 0.20 M A GPS05605 Data sheet 10 2002-09-11