BGB741L7ESDE6327

BGB741L7ESD Pre-matched general purpose LNA MMIC for 50 MHz- 3.5 GHz applications Product description The BGB741L7ESD is a high performance broadband low noise amplifier (LNA) MMIC based on Infineon’s silicon germanium carbon (SiGe:C) bipolar technology. Feature list • • • • Minimum noise figure NFmin = 1.05 dB at 2.4 GHz, 3 V, 10 mA Supply voltage range VCC = 1.8 to 4.0 V at TA = 25 °C High RF input power robustness of 20 dBm Integrated ESD protection: 2 kV HBM at all pins Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications • • • Satellite navigation systems (e.g. GPS, GLONASS, BeiDou, Galileo) Wireless communications: WLAN 2.4 GHz and 5-6 GHz bands, broadband LTE or WiMAX LNA ISM applications like RKE and smart meter, as well as for emerging wireless applications such as DVBTerrestrial Device information Table 1 Part information Product name / Ordering code Package Pin configuration BGB741L7ESD / BGB741L7ESDE6327XTSA1 TSLP-7-1 1 = VCC 5 = VCtrl 2 = VBias Marking Pieces / Reel 3 = RFin 4 = RFout AY 7500 6 = Current 7 = Ground adjust Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document v3.1 2021-07-14 BGB741L7ESD Internally matched general purpose LNA MMIC for 50 MHz- 3.5 GHz applications Functional block diagram Functional block diagram This functional block diagram explains how the BGB707L7ESD is used. The RF power on/off function is controlled by applying VCtrl. By using an external resistor Rext, the pre-set current of 5.5 mA (when Rext is omitted) can be increased. Base VB and collector VC voltages are applied to the respective pins RFin and RFout by external inductors LB and LC. DC, VCC Rext 1 VCC 2 internal Biasing 3 Cin LC Out 4 RF-Out GND 7 4 Current Adjust On/Off RF-In 5 5 LB Bias-Out In 6 6 Cout 7 DC, V ctrl 1 2 3 (on package backside) BGB7XXL7ESD functional block Figure 1 Datasheet Functional block diagram 2 v3.1 2021-07-14 BGB741L7ESD Internally matched general purpose LNA MMIC for 50 MHz- 3.5 GHz applications Table of contents Table of contents Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Functional block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1 Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 4.1 4.2 4.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Characteristic DC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Package information TSLP-7-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Datasheet 3 v3.1 2021-07-14 BGB741L7ESD Internally matched general purpose LNA MMIC for 50 MHz- 3.5 GHz applications Operating conditions 1 Operating conditions Table 2 Operation conditions at TA = 25 °C Parameter Symbol Values Min. Typ. Note or test condition V – Max. Supply voltage VCC 1.8 3 4 Control voltage in on-mode VCtrl-on 1.2 – VCC Control voltage in off-mode VCtrl-off -0.3 Datasheet Unit 0.3 4 v3.1 2021-07-14 BGB741L7ESD Internally matched general purpose LNA MMIC for 50 MHz- 3.5 GHz applications Absolute maximum ratings 2 Absolute maximum ratings Table 3 Absolute maximum ratings at TA = 25 °C (unless otherwise specified) Parameter Symbol Values Unit Note or test condition 4 3.5 V TA = 25 °C TA = -55 °C mA – Min. – Max. Supply voltage VCC Supply current ICC 30 DC current at RFin IB 3 Control voltage VCtrl VCC V ESD stress pulse (HBM) VESD +/- 2 kV RF input power PRFin 20 dBm Total power dissipation1) Ptot 120 mW TS ≤ 117 °C Junction temperature TJ 150 °C – Storage temperature TStg -55 Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the integrated circuit. 1 TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB Datasheet 5 v3.1 2021-07-14 BGB741L7ESD Internally matched general purpose LNA MMIC for 50 MHz- 3.5 GHz applications Thermal characteristics 3 Thermal characteristics Table 4 Thermal resistance Parameter Symbol Values Min. Junction - soldering point RthJS Typ. – 275 Unit Note or test condition K/W – Max. – 140 120 Ptot [mW] 100 80 60 40 20 0 0 50 100 150 Ts [°C] Figure 2 Datasheet Total power dissipation Ptot = f(TS) 6 v3.1 2021-07-14 BGB741L7ESD Internally matched general purpose LNA MMIC for 50 MHz- 3.5 GHz applications Electrical characteristics 4 Electrical characteristics 4.1 DC characteristics Table 5 DC characteristics at VCC = 3 V, TA = 25 °C Parameter Symbol Values Min. Supply current in on-mode ICC-on Supply current in off-mode ICC-off Control current in on-mode Control current in off-mode Datasheet Typ. Unit Note or test condition mA VCtrl = 3 V Rext = open Rext = 30 kΩ Rext = 3 kΩ μA VCtrl = 0 V Max. 5.0 – – 5.5 6 10 6.5 – – – – 6 ICtrl-on 14 20 VCtrl = 3 V ICtrl-off – 0.1 VCtrl = 0 V 7 v3.1 2021-07-14 BGB741L7ESD Internally matched general purpose LNA MMIC for 50 MHz- 3.5 GHz applications Electrical characteristics 4.2 Characteristic DC diagrams The measurement setup is an application circuit according to Figure 1 on page 2, using the integrated biasing. TA = 25 °C (unless otherwise specified). Figure 3 Supply current vs external resistance ICC = f(Rext), VCtrl = 3 V, VCC = parameter Figure 4 Supply current vs supply voltage ICC = f(VCC), VCtrl = 3 V, Rext = parameter Datasheet 8 v3.1 2021-07-14 BGB741L7ESD Internally matched general purpose LNA MMIC for 50 MHz- 3.5 GHz applications Electrical characteristics Figure 5 Supply current vs control voltage ICC = f(VCtrl), VCC = 3 V, Rext = parameter Figure 6 Supply current vs temperature ICC = f(TA), VCtrl = VCC = 3 V, Rext = open Datasheet 9 v3.1 2021-07-14 BGB741L7ESD Internally matched general purpose LNA MMIC for 50 MHz- 3.5 GHz applications Electrical characteristics 4.3 AC characteristics The measurement setup is a test fixture with Bias-T’s in a 50 Ω system, TA = 25 °C. Top View VB 1 VCC 2 BiasOut GND Current Adjust 6 On/Off Control 5 Bias-T In VC Bias-T 3 RF-In RF-Out 4 Out 7 Figure 7 Datasheet Testing setup 10 v3.1 2021-07-14 BGB741L7ESD Internally matched general purpose LNA MMIC for 50 MHz- 3.5 GHz applications Electrical characteristics Table 6 AC characteristics, VC = 3 V, f = 150 MHz Parameter Symbol Values Min. Typ. Unit Note or test condition dB IC = 6 mA IC = 10 mA ZS = ZS,opt Max. Minimum noise figure 2) NFmin Noise figure in 50 Ω system 3) NF50 1.1 1.05 IC = 6 mA IC = 10 mA ZS = ZL = 50 Ω Transducer gain |S21|² 19 21 IC = 6 mA IC = 10 mA Maximum stable power gain Gms 20 21.5 IC = 6 mA IC = 10 mA Input 1 dB gain compression point IP1dB -5.5 -8 Input 3rd order intercept point IIP3 5.5 3.5 Input return loss RLin 14 18 Output return loss RLout 12.5 18.5 2 3 – 1.05 0.95 – dBm ICq = 6 mA ICq = 10 mA IC = 6 mA IC = 10 mA dB IC = 6 mA IC = 10 mA IC = 6 mA IC = 10 mA Test fixture losses are extracted Parameter measured on an application board according to Figure 1 on page 2 presenting a 50 Ω system to the device. ICq is the quiescent current, that is at small RF input power level. IC increases as RF input power level approaches IP1dB. Datasheet 11 v3.1 2021-07-14 BGB741L7ESD Internally matched general purpose LNA MMIC for 50 MHz- 3.5 GHz applications Electrical characteristics Table 7 AC characteristics, VC = 3 V, f = 450 MHz Parameter Symbol Values Min. Typ. Unit Note or test condition dB IC = 6 mA IC = 10 mA ZS = ZS,opt Max. Minimum noise figure 2) NFmin Noise figure in 50 Ω system 3) NF50 1.1 1.05 IC = 6 mA IC = 10 mA ZS = ZL = 50 Ω Transducer gain |S21|² 18.5 20.5 IC = 6 mA IC = 10 mA Maximum available power gain Gma 19 20.5 IC = 6 mA IC = 10 mA Input 1 dB gain compression point IP1dB -5 -7.5 Input 3rd order intercept point IIP3 4 2.5 Input return loss RLin 15.5 21 Output return loss RLout 14.5 28 2 3 – 1.05 0.95 – dBm ICq = 6 mA ICq = 10 mA IC = 6 mA IC = 10 mA dB IC = 6 mA IC = 10 mA IC = 6 mA IC = 10 mA Test fixture losses are extracted Parameter measured on an application board according to Figure 1 on page 2 presenting a 50 Ω system to the device. ICq is the quiescent current, that is at small RF input power level. IC increases as RF input power level approaches IP1dB. Datasheet 12 v3.1 2021-07-14 BGB741L7ESD Internally matched general purpose LNA MMIC for 50 MHz- 3.5 GHz applications Electrical characteristics Table 8 AC characteristics, VC = 3 V, f = 900 MHz Parameter Symbol Values Min. Typ. Unit Note or test condition dB IC = 6 mA IC = 10 mA ZS = ZS,opt Max. Minimum noise figure 2) NFmin Noise figure in 50 Ω system 3) NF50 1.1 1.05 IC = 6 mA IC = 10 mA ZS = ZL = 50 Ω Transducer gain |S21|² 18.5 20 IC = 6 mA IC = 10 mA Maximum available power gain Gma 19 20.5 IC = 6 mA IC = 10 mA Input 1 dB gain compression point IP1dB -5 -7 Input 3rd order intercept point IIP3 3 1.5 Input return loss RLin 15.5 19 Output return loss RLout 14.5 28.5 2 3 – 1.05 0.95 – dBm ICq = 6 mA ICq = 10 mA IC = 6 mA IC = 10 mA dB IC = 6 mA IC = 10 mA IC = 6 mA IC = 10 mA Test fixture losses are extracted Parameter measured on an application board according to Figure 1 on page 2 presenting a 50 Ω system to the device. ICq is the quiescent current, that is at small RF input power level. IC increases as RF input power level approaches IP1dB. Datasheet 13 v3.1 2021-07-14 BGB741L7ESD Internally matched general purpose LNA MMIC for 50 MHz- 3.5 GHz applications Electrical characteristics Table 9 AC characteristics, VC = 3 V, f = 1.5 GHz Parameter Symbol Values Min. Typ. Unit Note or test condition dB IC = 6 mA IC = 10 mA ZS = ZS,opt Max. Minimum noise figure 2) NFmin Noise figure in 50 Ω system 3) NF50 1.1 1.05 IC = 6 mA IC = 10 mA ZS = ZL = 50 Ω Transducer gain |S21|² 18 19.5 IC = 6 mA IC = 10 mA Maximum available power gain Gma 18.5 20 IC = 6 mA IC = 10 mA Input 1 dB gain compression point IP1dB -4.5 -6.5 Input 3rd order intercept point IIP3 2.5 1 Input return loss RLin 14.5 16 Output return loss RLout 14 23 2 3 – 1.05 1.0 – dBm ICq = 6 mA ICq = 10 mA IC = 6 mA IC = 10 mA dB IC = 6 mA IC = 10 mA IC = 6 mA IC = 10 mA Test fixture losses are extracted Parameter measured on an application board according to Figure 1 on page 2 presenting a 50 Ω system to the device. ICq is the quiescent current, that is at small RF input power level. IC increases as RF input power level approaches IP1dB. Datasheet 14 v3.1 2021-07-14 BGB741L7ESD Internally matched general purpose LNA MMIC for 50 MHz- 3.5 GHz applications Electrical characteristics Table 10 AC characteristics, VC = 3 V, f = 1.9 GHz Parameter Symbol Values Min. Typ. Unit Note or test condition dB IC = 6 mA IC = 10 mA ZS = ZS,opt Max. Minimum noise figure 2) NFmin Noise figure in 50 Ω system 3) NF50 1.15 1.1 IC = 6 mA IC = 10 mA ZS = ZL = 50 Ω Transducer gain |S21|² 17.5 19 IC = 6 mA IC = 10 mA Maximum available power gain Gma 18 19.5 IC = 6 mA IC = 10 mA Input 1 dB gain compression point IP1dB -4 -6 Input 3rd order intercept point IIP3 2.5 1 Input return loss RLin 13.5 15 Output return loss RLout 13.5 21 2 3 – 1.05 1.05 – dBm ICq = 6 mA ICq = 10 mA IC = 6 mA IC = 10 mA dB IC = 6 mA IC = 10 mA IC = 6 mA IC = 10 mA Test fixture losses are extracted Parameter measured on an application board according to Figure 1 on page 2 presenting a 50 Ω system to the device. ICq is the quiescent current, that is at small RF input power level. IC increases as RF input power level approaches IP1dB. Datasheet 15 v3.1 2021-07-14 BGB741L7ESD Internally matched general purpose LNA MMIC for 50 MHz- 3.5 GHz applications Electrical characteristics Table 11 AC characteristics, VC = 3 V, f = 2.4 GHz Parameter Symbol Values Min. Typ. Unit Note or test condition dB IC = 6 mA IC = 10 mA ZS = ZS,opt Max. Minimum noise figure 2) NFmin Noise figure in 50 Ω system 3) NF50 1.15 1.1 IC = 6 mA IC = 10 mA ZS = ZL = 50 Ω Transducer gain |S21|² 17 18.5 IC = 6 mA IC = 10 mA Maximum available power gain Gma 17.5 19 IC = 6 mA IC = 10 mA Input 1 dB gain compression point IP1dB -3.5 -5.5 Input 3rd order intercept point IIP3 3 1 Input return loss RLin 12.5 13.5 Output return loss RLout 12.5 18 2 3 – 1.1 1.05 – dBm ICq = 6 mA ICq = 10 mA IC = 6 mA IC = 10 mA dB IC = 6 mA IC = 10 mA IC = 6 mA IC = 10 mA Test fixture losses are extracted Parameter measured on an application board according to Figure 1 on page 2 presenting a 50 Ω system to the device. ICq is the quiescent current, that is at small RF input power level. IC increases as RF input power level approaches IP1dB. Datasheet 16 v3.1 2021-07-14 BGB741L7ESD Internally matched general purpose LNA MMIC for 50 MHz- 3.5 GHz applications Electrical characteristics Table 12 AC characteristics, VC = 3 V, f = 3.5 GHz Parameter Symbol Values Min. Typ. Unit Note or test condition dB IC = 6 mA IC = 10 mA ZS = ZS,opt Max. Minimum noise figure 2) NFmin Noise figure in 50 Ω system 3) NF50 1.35 1.25 IC = 6 mA IC = 10 mA ZS = ZL = 50 Ω Transducer gain |S21|² 15 16.5 IC = 6 mA IC = 10 mA Maximum available power gain Gma 16 17.5 IC = 6 mA IC = 10 mA Input 1 dB gain compression point IP1dB -2.5 -4.5 Input 3rd order intercept point IIP3 3.5 1.5 Input return loss RLin 10 10.5 Output return loss RLout 10 13.5 2 3 – 1.25 1.2 – dBm ICq = 6 mA ICq = 10 mA IC = 6 mA IC = 10 mA dB IC = 6 mA IC = 10 mA IC = 6 mA IC = 10 mA Test fixture losses are extracted Parameter measured on an application board according to Figure 1 on page 2 presenting a 50 Ω system to the device. ICq is the quiescent current, that is at small RF input power level. IC increases as RF input power level approaches IP1dB. Datasheet 17 v3.1 2021-07-14 BGB741L7ESD Internally matched general purpose LNA MMIC for 50 MHz- 3.5 GHz applications Electrical characteristics Table 13 AC characteristics, VC = 3 V, f = 5.5 GHz Parameter Symbol Values Min. Typ. Unit Note or test condition dB IC = 6 mA IC = 10 mA ZS = ZS,opt Max. Minimum noise figure 2) NFmin Noise figure in 50 Ω system 3) NF50 1.95 1.85 IC = 6 mA IC = 10 mA ZS = ZL = 50 Ω Transducer gain |S21|² 12 13 IC = 6 mA IC = 10 mA Maximum available power gain Gma 14 15 IC = 6 mA IC = 10 mA Input 1 dB gain compression point IP1dB -1 -3 Input 3rd order intercept point IIP3 8.5 4 Input return loss RLin 7 8 Output return loss RLout 7 8.5 2 3 – 1.8 1.75 – dBm ICq = 6 mA ICq = 10 mA IC = 6 mA IC = 10 mA dB IC = 6 mA IC = 10 mA IC = 6 mA IC = 10 mA Test fixture losses are extracted Parameter measured on an application board according to Figure 1 on page 2 presenting a 50 Ω system to the device. ICq is the quiescent current, that is at small RF input power level. IC increases as RF input power level approaches IP1dB. Datasheet 18 v3.1 2021-07-14 BGB741L7ESD Internally matched general purpose LNA MMIC for 50 MHz- 3.5 GHz applications Package information TSLP-7-1 5 Package information TSLP-7-1 Figure 8 TSLP-7-1 package Note: For package information including footprint, packing and assembly recommendation refer to: https://www.infineon.com/cms/en/product/packages/PG-TSLP/PG-TSLP-7-1 Datasheet 19 v3.1 2021-07-14 BGB741L7ESD Internally matched general purpose LNA MMIC for 50 MHz- 3.5 GHz applications Revision history Revision history Document version Date of release Description of changes 3.0 2018-09-26 New datasheet layout. 3.1 2021-07-14 Package outline marking corrected, link to Infineon package website added Datasheet 20 v3.1 2021-07-14 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2021-07-14 Published by Infineon Technologies AG 81726 Munich, Germany © 2021 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-zev1491985034409 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.