BGF106CE6328XTSA1

Hipac High performance passive and actives on chip BGF106C SIM Card Interface Filter and ESD Protection BGF106C Datasheet Rev. 3.1, 2013-01-16 Final Power Management & Multimarket BGF106C Revision History Rev. 3.0, 2011-05-13 Page or Item Subjects (major changes since previous revision) Rev. 3.1, 2013-01-16 4 Features updated Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2011-11-11 Final Datasheet 2 Rev. 3.1, 2013-01-16 BGF106C SIM Card Interface Filter and ESD Protection 1 SIM Card Interface Filter and ESD Protection 1.1 Features • • • • • ESD protection circuit and interface filter for SIM cards ESD protection according to IEC61000-4-2 for ±15 kV contact discharge on external IOs Wafer level package with SnAgCu solder balls 400 μm solder ball pitch Pb-free (RoHS compliant) and halogen free package 1.2 WLP-8-11-N-3D Description BGF106C is an ESD protection circuit and filtering interface for SIM cards. All external IOs are protected against ESD pulses of ±15 kV contact discharge according to IEC61000-4-2. The wafer level package is a green lead-free and halogen-free package with a size of only 1.2 mm x 1.2 mm and a total height of 0.6 mm Vcc C2 RST_int A3 R1, 100Ω A2 RST_ext CLK_int B3 R2, 47Ω B1 CLK_ext Data I/O_int C3 R3, 100Ω C1 Data I/O_ext GND, B2 BGF106_ schematic_app.vsd Figure 1-1 Schematic Diagram and Package Configuration Type Package Marking Chip BGF106C WLP-8-11 6C N0727 Final Datasheet 3 Rev. 3.1, 2013-01-16 BGF106C Characteristics 2 Characteristics Table 2-1 Maximum Ratings Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Voltage at all pins to GND VP 0 – 5.5 V – Operating temperature range TOP -40 – +85 ° – Storage temperature range TSTG -65 – +150 °C – Summed up input power for all pins Pin – – 60 mW TS < 70 °C Contact discharge at internal pins A3, B3, C3 to VESD any other pin -2 – 2 kV – Contact discharge at external pins A2, B1, C1, VESD C2 to GND -15 – 15 kV – Electrostatic discharge according to IEC61000-4-2 Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. 2.1 Electrical Characteristics Table 2-2 Electrical Characteristics1) Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Resistors R1, R3 R1,3 80 100 120 Ω – Resistor R2 R2 37.6 47 56.4 Ω – Reverse current of ESD protection diodes IR – – 1 2 100 1000 nA nA V=3V V=5V Breakdown voltage of ESD diodes V(BR) 6.5 7.8 – V I(BR) = 1 mA Line capacitance Capacitance of all lines to GND 1) at TA = 25 °C CT – 16.5 20 pF V=0V Final Datasheet 4 Rev. 3.1, 2013-01-16 BGF106C Typical Characteristics 3 Typical Characteristics Line B3-B1 Line C3-C1 Line A3-A2 Typical Insertion Loss 0 -5 S21 [dB] -10 -15 -20 -25 -30 -35 -40 1 10 100 1000 10000 f [MHz] Figure 3-1 Insertion loss, ZS=ZL=50 Ω Typical Cross Talk 0 S21 [dB] -20 -40 -60 -80 -100 -120 1 10 100 1000 10000 f [MHz] Figure 3-2 Cross talk, ZS=ZL=50 Ω (all unused input and output pins are terminated with 50 Ω) Final Datasheet 5 Rev. 3.1, 2013-01-16 BGF106C Package Package Solder balls face up 0.6 ±0.05 B 0.4 (0.2 ±0.05) C (0.2 ±0.05) A3 A2 B3 B2 B1 C3 C2 C1 2 x 0.4 = 0.8 8x 0.08 C 8x COPLANARITY ø0.05 M A B A 1.2 ±0.05 2 x 0.4 = 0.8 0.1 C 0.4 0.2 ±0.05 STANDOFF SEATING PLANE 3) Pin A1 2) Corner Index Area 1.2 ±0.05 (0.2 ±0.05) Solder balls face down (0.2 ±0.05) 4 0.25 ±0.04 1) 1) Dimension is measured at the maximum solder ball diameter, parallel to primary datum C 2) A1 corner identified by marking 3) Primary datum C and seating plane are defined by the domed crowns of the balls WLP-8-11-N-PO V01 Figure 4-1 WLP-8-11 Package outline (dimension in mm) 0.8 0.8 0.4 0.4 0.25 WLP-8-11-N-FP V01 Figure 4-2 WLP-8-11 Footprint (dimension in mm) 4 ±0.1 Pin A1 Corner Index Area 8 ±0.1 1.33 ±0.05 0.25 0.75 1.33 ±0.05 WLP-8-11-N-TP V01 Figure 4-3 WLP-8-11 Packing (dimension in mm) Final Datasheet 6 Rev. 3.1, 2013-01-16 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG