BGF110E6327XT

D a t a S he et , V 2. 2, J u l y 2 00 7 B G F 11 0 S D C a r d I n te r f a c e E S D P r o t e c ti o n S m a l l S i g n a l D i s c r et e s Edition 2007-07-04 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGF110 BGF110 Revision History: 2007-07-04, V2.2 Previous Version: 2006-10-17 Page Subjects (major changes since last revision) 4 EMI and cross talk feature added 4 Contact discharge added Data Sheet 3 V2.2, 2007-07-04 BGF110 SD Card Interface ESD Protection SD Card Interface ESD Protection Feature • ESD protection for SD Card interface • Integrated ESD protection up to 15 kV contact discharge • Very good EMI filtering with very low cross talk • Green wafer level package with SnAgSu solder balls • 400 µm solder ball pitch WLP-24-2 Description The BGF110 is an ESD protection for the SD Card interface using a green wafer level package. External pins are protected up to 15 kV contact discharge according to IEC61000-4-2. A RF filter functionality provides very good RF and EMI suppression on the digital lines with very low cross talk. Sensitivity of the line capacitance on the bias voltage is very low. The wafer level package has a 400 µm solder ball pitch and 250 µm ball diameter (before ball attach). Type Package Marking Chip BGF110 WLP-24-2 BGF110 N0720 Table 1 Maximum Ratings Parameter Symbol Values Min. Voltage at all pins to GND Operating temperature range Storage temperature range Maximum current at all pins VP TOP TSTG Imax Typ. Unit Max. -14 14 V -40 +85 °C -65 +150 °C 1) 113 mA -15 15 kV -2 2 kV Note / Test Condition Electrostatic discharge according to IEC61000-4-2 (contact discharge) VE Int. IOs: A1, A2, B1, B2, C1, C2, C3, D1, D2, E1, E2 VI Ext. IOs: A4, A5, B4, B5, C4, C5, D4, D5, E4, E5 1) Can be applied for 24 hours if thermal power dissipation into PCB is considered properly Data Sheet 4 V2.2, 2007-07-04 BGF110 SD Card Interface ESD Protection Electrical Characteristics1) Table 2 Parameter Symbol Series Resistors R1, R2, R3, R4, R5, R6, R7, R8, R9 R11, R12, R13, R14 R15 R21 Reverse current of ESD protection diodes Line capacitance Capacitance of each line to GND2) 1) at TA = 25 °C 2) Without line coupling by resistors R11 - R21 R1...9 R11...14 R15 R21 IR Values Unit Min. Typ. Max. 32 35 10.5 329 40 50 15 470 48 65 19.5 611 Ω kΩ kΩ kΩ 0.1 0.1 120 120 nA µA 13.5 11.5 20 pF CT Int. IOs Note / Test Condition VR = 3 V VR = 14 V VR = 0 V VR = 5 V Ext. IOs C5 R15, 15kΩ R14, 50kΩ R11, 50kΩ CLK D2 R13, 50kΩ VSD R12, 50kΩ DAT3_PU C3 R1, 40Ω SDCLK CMD R2, 40Ω D5 DATA0 R3, 40Ω B5 DATA1 R4, 40Ω E5 DATA2 R5, 40Ω E4 A1 DATA3 R6, 40Ω A4 SDDATA3 A2 CD R7, 40Ω A5 SDCD B4 SDWP C4 SDWP+CD B2 E2 E1 B1 WP R8, 40Ω C2 WP+CD R9, 40Ω D1 DAT3_PD SDCMD SDDATA0 SDDATA1 SDDATA2 D4 R21, 470kΩ C1 A3 GND_H GND_C D3, E3 BGF110_schematic.vsd Figure 1 Data Sheet Schematic 5 V2.2, 2007-07-04 BGF110 SD Card Interface ESD Protection Typical line attenuation 0 -5 S21 [dB] -10 -15 -20 -25 -30 -35 -40 100E+3 1E+6 10E+6 100E+6 1E+9 10E+9 f [Hz] BGF110_Line_attenuation.vsd Figure 2 Line attenuation ZS = ZL = 50 Ω Typical analog cross talk 0 -10 -20 S21 [dB] -30 -40 -50 -60 -70 -80 -90 10E+3 100E+3 1E+6 10E+6 100E+6 1E+9 10E+9 f [Hz] BGF110_Cross_talk.vsd Figure 3 Data Sheet Analog cross talk, ZS = ZL = 50 Ω 6 V2.2, 2007-07-04 BGF110 SD Card Interface ESD Protection Typical line capacitance C(U) 13.5 13.0 C(U) [pF] 12.5 12.0 11.5 11.0 10.5 0 1 2 3 4 5 6 7 8 9 10 U [V] BGF110_Line_capacitance.vsd Figure 4 Line capacitance versus bias voltage Package Outline 2 ±0.05 0.6 ±0.05 0.2 ±0.05 STANDOFF B 4 x 0.4 = 1.6 0.1 C 0.4 Pin A1 Corner Index Area 2) E3 E4 E5 D1 D2 D3 D4 D5 C1 C2 C3 C4 C5 B1 B2 B4 B5 A1 A2 A4 A5 A3 2 ±0.05 E2 4 x 0.4 = 1.6 E1 0.4 SEATING PLANE 3) A C 0.25 ±0.04 1) 0.08 C 24x COPLANARITY 24x ø0.05 M A B 1) Dimension is measured at the maximum solder ball diameter, parallel to primary datum C 2) Pin 1 corner identified by marking 3) Primary datum C and seating plane are defined by the spherical crowns of the balls GWLN1132 Figure 5 Data Sheet Package WLP-24-2 7 V2.2, 2007-07-04 BGF110 SD Card Interface ESD Protection Tape and reel specification 0.25 ±0.1 Pin 1 Corner Index Area 1) 2.42 ±0.05 1) Balls face down Figure 6 Data Sheet 8 2.42 ±0.05 4 ±0.1 0.95 ±0.05 CWLG1065 Tape for WLP-24-2 8 V2.2, 2007-07-04