May 2007
Product & Application Guide 2007
Small Signal Discretes
www.infineon.com/smallsignaldiscretes
Table of Contents
Applications
Mobile Communication ……………..
Consumer ………………………………….
Automotive & Industrial..………….
ESD / EMI Proctection ………….….
Lighting ………….………………………..
5
19
37
57
76
RF Discretes
Introduction …………………………….
RF Transistors ……………………….…
RF MMICs …………………………………
RF Diodes ………………………………..
RF PIN Diodes ………………………….
RF Varactor Diodes ………………….
RF MOSFET ……………………………..
81
83
102
113
115
126
132
Schottky Diodes
……………………………………………….…
141
© 2007 Infineon Technologies AG. All rights reserved.
Page 2
Table of Contents
HiPAC, TVS Diodes, Silicon Microphone …………………………………………………
HiPAC …………………………………….…
TVS Diodes …………………………………
Silicon Microphone ……………………
163
165
176
183
LED Drivers
……………………………………………………
186
AF Discretes
Introduction ………………………………
Digital Transistors ………………………
General Purpose Transistors ……
General Purpose Diodes ……………
201
204
208
212
General Information
Packages ……………………………………
Internet Navigation……………………
Application Notes ………………………
Nomenclature ……………………………
MatQ ……………………………………….…
224
227
229
233
237
© 2007 Infineon Technologies AG. All rights reserved.
Page 3
Table of Contents
Applications
RF Discretes
Schottky Diodes
HiPAC, TVS Diodes, Silicon Mircrophone
LED Drivers
AF Discretes
General Information
© 2007 Infineon Technologies AG. All rights reserved.
Page 4
Table of Contents
Applications
Mobile Communication
Consumer
Automotive & Industrial
ESD/EMI Protection
Lighting
© 2007 Infineon Technologies AG. All rights reserved.
Page 5
General Transceiver RF Front-end Circuit
> Applications > Mobile Communication
H3-Filters
IF
RF
HiPAC IPD
BGH92M
BGH182M
Buffer
RF Bipolar
BGA420
BFP420
BFR92x
BFR93Ax
BFR340
AGC
Buffer
RF Bipolar
IF
Low Noise Amplifier
RF Bipolar
BFP640
BFP740
BGA428
BGA622
BGA734L16
(TriBand)
SiGe Transistors
SiGe:C Transistor
Si MMIC
SiGe MMIC
SiGe:C MMIC
Antenna switches &
Switched matching
(for PA in Dual/Triband)
RF PIN Diodes
BA892x.
BAR63x
BAR64x
BAR65x
BAR88x
BAR89x
BAR90x
BGA420
BFP420
BFR92x
BFR93Ax
BFR340
Power Detection
RF Schottky Diodes
BAT15x
BAT68x
BAT62x
BAS70x
© 2007 Infineon Technologies AG. All rights reserved.
Recommended Products
in RED !
Page 6
Multiband (GSM/EDGE/UMTS) Mobile Phone
> Applications > Mobile Communication
BGA428
BPF
ANT SW Diodes
1900
BA892x BAR63x
BAR64x BAR65x
BAR88x BAR89x
BAR90x
1800
PA
BGH92M
850/900
BGA428
1800/1900
ANT SW
BPF
BGH182M
850
900
PA
1950
Band I
1880
GSM/
EDGE
TRX
Transceiver
Band SW
836
Band II
2140
Power
Detection Diodes
BAT15x BAT68x
BAT62x BAS70x
UMTS
TRX
1960
Band V
882
Duplexer
BGA734L16
BPF
© 2007 Infineon Technologies AG. All rights reserved.
Recommended
Products in RED !
Page 7
Cellular Phone
ESD/EMI-Protection and RF Passive Integration
ESD5V0Sx-series
TV
USB
BGF111
LCD
LCD
BGF108/BGF109
BGF109L
1800/1900
USB
USB
ESD8V0L2B-03L
850/900
ESD5V0Sx-series
BGF105/BGF106
SD
SIMCard
Card
BGF110
MMC
BGF104
Keypad
Keypad
ESD5V0Sx-series
I/O
I/O Data
Data
ESD5V0Sx-series
HiPAC Product Portfolio
BGH92M
BGH182M
Transceiver
Quadband
SIM Card
TX
Digital IC
Camera
Power
Supply
BASxx/BATxx
RX
ESD/EMI-Protection
1800/1900
850/900
ESD-Protection
PA
Antenna
SwitchModule
BGF100/BGF200
Analog IC
> Applications > Mobile Communication
H3-filter + Balun
Recommended Products in RED !
© 2007 Infineon Technologies AG. All rights reserved.
Page 8
Antenna Switch Module (ASM)
Example: Triple Band Front End
> Applications > Mobile Communication
TX GSM
RX GSM
RX PCS
RX DCS
TX DCS
PIN Diode BAR63xx, BAR64xx, BAR65xx, BAR88xx, BAR89xx, BAR90xx
Recommended Products in RED !
© 2007 Infineon Technologies AG. All rights reserved.
Page 9
Global Positioning System (GPS) for Mobile Phones
GPS Receiver
> Applications > Mobile Communication
SAW
BPF
BPF
Mixer BPF
Signal
Processing
Amp
LO
LNA
GPS Receiver/ASIC
BGA615L7, BGA622(L7), BGA428,
BFP700series, BFP460, BFP540ESD
ESD Protection ESDxPyRF-series
Recommended Products in RED !
© 2007 Infineon Technologies AG. All rights reserved.
Page 10
Wireless LAN (802.11b/g)
2.4 GHz WLAN Front-End
> Applications > Mobile Communication
2.4 – 2.5 GHz
DPDT
Antenna
diversity
LNA
MMIC:
IEEE802.11
WLAN
Transceiver
&BaseBand
BGA622L7
RF Transistor: BFP640 / 640F / 620 / 620F, BFP700series
Recommended Products in RED !
© 2007 Infineon Technologies AG. All rights reserved.
Page 11
Cordless Phone (DECT, WDCT,...)
1.9 GHz Cordless Phone - Block Diagram
> Applications > Mobile Communication
1.9 GHz
RX
Transceiver
Baseband IC
TX
LNA
BGA622(L7)
ANT SW
BAR63x, BAR64x, BAR88x, BAR89x, BAR90x, BAR65x
PA
BF776 + BFP650, BFP450
Recommended Products in RED !
© 2007 Infineon Technologies AG. All rights reserved.
Page 12
RF Discretes for Cordless Phone
2.4GHz Cordless Phone
> Applications > Mobile Communication
BPF
2.4 GHz
Buffer Amp
BPF
xN
Multiplier
BFR182T,
BFR300Tseries
LNA
BGA622(L7)
PA 1. stage BF776
2. stage BFP650
3. stage BFP650
ANT SW
MIX
BAR88x
BAR89x
BAR90x
Buffer BFR182
BFR300series
BFP540
VCO
BFR300series
BFP460
BFR300series
BBY5xseries
Recommended Products in RED !
© 2007 Infineon Technologies AG. All rights reserved.
Page 13
RF Discretes for Cordless Phone
5.8GHz Cordless Phone
> Applications > Mobile Communication
BPF
5.8 GHz
Buffer Amp
BPF
xN
Multiplier
BFP640
LNA BFP700series,
PA
Buffer BF776
BF776
ANT SW
BAR50x
BAR89x
BAR90x
MIX
BF776
VCO
1. stage BFR740L3
2. stage BFR750L3
3. stage BFR750L3
BFR300series
BBY5xseries
Recommended Products in RED !
© 2007 Infineon Technologies AG. All rights reserved.
Page 14
Bluetooth (BT)
Front End for Bluetooth Class 1
> Applications > Mobile Communication
2.45GHz
RX
Transceiver
TX
Oscillator
Module
BGA622L7, BGA428
BGA427
RF Transistor: BFP640 / 640F / 620
620F / 540F / 640
BFP700series
ANT SW BAR88x, BAR90x
BAR63x, BAR64x
BAR65x
LNA
MMIC:
PA
LO
RF Transistor: BFP450
BFP420F, BFP540F, BFP620F
BFP640, BFR340F, BFR360F
BBY5X, BBY6X
Recommended Products in RED !
© 2007 Infineon Technologies AG. All rights reserved.
Page 15
WiMAX Transceiver System
> Applications > Mobile Communication
WiMAX frequencies
Low: 2.3 – 2.7 GHz
Mid: 3.3 – 3.7 GHz
Rx
Diplexer
Balun
WiMAX
Single/Dual Band
Transceiver
& BaseBand
DPDT
Antenna
diversity
Tx
Diplexer
MMIC:
LNA
PA
Balun
BGA622L7 (Low Band)
RF Transistor: BFP640 / 640F / 620 / 620F (Low & Mid Bands),
BFP700series (Low & Mid Bands)
Recommended Products in RED !
© 2007 Infineon Technologies AG. All rights reserved.
Page 16
VCO Module
for W-CDMA 2.1 GHz
> Applications > Mobile Communication
VCTRL 0.5 - 3.0 V
VCTRL
RFOUT
f = 2110 MHz – 2170 MHz
Varactor Diode: BBY58-02L
RF-Transistor: BFR360L3
Recommended Products in RED !
© 2007 Infineon Technologies AG. All rights reserved.
Page 17
High Isolation Schottky Diode Pair
for Power Detection
> Applications > Mobile Communication
to Antenna Switch
PA
Detector Diode
Reference Diode
Schottky Diode Pair
Differential
Amplifier
BAT62-09S, BAT63-07W
© 2007 Infineon Technologies AG. All rights reserved.
Page 18
Table of Contents
Applications
Mobile Communication
Consumer
Automotive & Industrial
ESD/EMI Protection
Lighting
© 2007 Infineon Technologies AG. All rights reserved.
Page 19
Wireless LAN (802.11b/g)
2.4 GHz WLAN Front-End
> Applications > Consumer
BPF
2.4 – 2.5 GHz
DPDT
Transceiver
&BaseBand
Antenna
diversity
BPF
LNA
PA
MMIC: BGA622L7 (2.4GHz - 802.11 b/g)
RF Transistor: BFP640 / 640F / 620 / 620F, BFP700series
Recommended Products in RED !
© 2007 Infineon Technologies AG. All rights reserved.
Page 20
Wireless LAN (802.11b/g, a/b/g/n)
2.4 and 5 GHz WLAN Front-End
2.4 GHz
5 GHz
Antenna
diversity
PA
2.4 GHz
DPDT
5 GHz
Transceiver & Baseband Chipset
> Applications > Consumer
FE-Module
LNA
2.4GHz:
MMIC: BGA622L7 RF Transistors: BFP640 / 640F / 620 / 620F, BFP700series
5GHz:
RF Transistor: BFP640 / 640F / 620 / 620F, BFP700series
2.4&5GHz:
MMIC: T1515, BGA700L16
Recommended Products in RED !
© 2007 Infineon Technologies AG. All rights reserved.
Page 21
Reference Design Tuners
with Infineon IC & Discretes
> Applications > Consumer
5HIHUHQFHGHVLJQVDYDLODEOHDW,QILQHRQ7XQHU'HYLVLRQ
Target application
Module
IC from COM TU
Analog Terrestrial / Cable
(PAL/NTSC)
Tuner
KTS6027-2
Digital Cable
Tuner
TUA6030
Digital Terrestrial
DVB-T
Tuner
NIM
ATSC
Tuner
NIM
ISDB-T
Digital Portable
Tuner
Examples of Discretes Used
BB535, BB555, BB565
BB639C, BB659C. BB644, BB664
TUA6034
BB669, BB689, BB640
TUA6034 + TDA6192 + Demod* BF2030W, BF2040W, BF1005S
BG3130/R
TUA6034, TUA6030
BG3123R
TUA6034 + TDA6192 + Demod*
TUA6034
5V
Half-NIM
TUA6034 + TDA6192
3V T-DMB
Half-NIM
TUA6045
3V DVB-H/T UHF
Half-NIM
TUA6041
3V 3-band
Half-NIM
TUA6041
BBY5502W
BBY5602W
BFP540ESD
BF5030W
BG5130R
'HPRGXODWRU,&IURP&RRSHUDWLRQSDUWQHU
© 2007 Infineon Technologies AG. All rights reserved.
Page 22
Module Tuner for Analog / Cable / Terrestrial
> Applications > Consumer
VHF I: 47 ... 160MHz
Tank
Circuit
RF Input
47 ... 860MHz
VHF II/III: 160 ... 470MHz
Mixer
Oscillator
PLL
IC
Tank
Circuit
UHF: 470 ... 860MHz
Tank
Circuit
MOSFET VHF III/UHF
MOSFET VHF I/II
BG3130/R (Dual)
BG3123/R (Dual)
BG5130R (Dual)
BF2030W
BF2040W
BF5030W
BB659C, BB664
Tank
Circuit
Varactor Diode BB689,
VHF III/UHF
Switching: BA892/ -02L
Varactor Diode BB555
VHF I/II
BB565
Recommended Products in RED !
© 2007 Infineon Technologies AG. All rights reserved.
Page 23
T-DMB/DAB in VHF Band III and L-Band
> Applications > Consumer
VHF III 170MHz-240MHz
Mixer
Oscillator
PLL
e.g. TUA6045
L-Band
Tank
Circuit
LNA
BFP460*, BFP540ESD*
*ESD hardened
Tuner Filter/
Tank
Circuit
ESD Protection ESDxPyRF-series
BBY55-02W, BBY56-02W
Tank Circuit
MOSFET
BF5030W
Recommended Products in RED !
© 2007 Infineon Technologies AG. All rights reserved.
Page 24
FM Tuner
> Applications > Consumer
RF signals
AGC
FM
Tuned
Filter
Tuned
Filter
Mixer
Oscillator
PLL
IC
Fixed IF signal
AM Prestage
Oscillator
Tank
Circuit
AM + FM
AGC
Oscillator
Tank
Circuit
Tuned
Filter
Varactor diode
BB804
BB814
BB844
BB914
MOSFET
Gain control
BF998R
BF999
BF1009SR
BC848
BAR14-1, BAR61
BA595, BA895
Recommended Products in RED !
© 2007 Infineon Technologies AG. All rights reserved.
Page 25
Si-Tuner System for CATV/DVB-T
> Applications > Consumer
SAW
CATV / DVB-T: 40 …860 MHz
Demod
VGA
Mixer
VCO 1
Mixer
VCO 2
Si-Tuner
LNA
ESD
Protection
BFP460*, BFP540ESD*, BFP700series
BGA622(L7), BGA612, BGA614, BGA616
*ESD hardened
ESDxPyRF-series
Recommended Products in RED !
© 2007 Infineon Technologies AG. All rights reserved.
Page 26
Si-Tuner System for Mobile TV
> Applications > Consumer
DVB-H: VHF III/UHF/L-Band
DVB-S: 950…2150MHz
Demod
VGA
GSM
Rejection
Mixer
VCO 1
Si-Tuner
LNA
BGA622(L7), BGA612, BGA614, BGA616
BFP460*, BFP540ESD*, BFP700series
ESD
Protection
ESDxPyRF-series
*ESD hardened
Recommended Products in RED !
© 2007 Infineon Technologies AG. All rights reserved.
Page 27
Active Antenna (Tuner, Cellular, GPS)
for Portable Applications
> Applications > Consumer
BPF
Receiver
IC
1st LNA
2nd LNA
3rd LNA
Cable
1st/ 2nd LNA
BFP700series, BFP640, BFP640F
3rd LNA
BFP650
ESD Protection ESDxPyRF-series
Recommended Products in RED !
© 2007 Infineon Technologies AG. All rights reserved.
Page 28
WiMAX Transceiver System
> Applications > Consumer
WiMAX frequencies
High: 5.7 – 5.9 GHz
Mid: 3.3 – 3.7 GHz
Low: 2.3 – 2.7 GHz
Rx
Diplexer
Balun
WiMAX
Transceiver
Single/Dual or
Triple Band
& Baseband
DPDT
Antenna
diversity
Tx
Diplexer
MMIC:
LNA
RF Transistor:
PA
Balun
BGA622L7 (Low Band),
T1515 & BGA700L16 (Low / High Band)
BFP640 / 640F / 620 / 620F (Low / Mid / High Band),
BFP700series (Low / Mid / High Band)
Recommended Products in RED !
© 2007 Infineon Technologies AG. All rights reserved.
Page 29
UWB Transceiver System
> Applications > Consumer
Broadband
Filter
Balun
UWB TRX IC
Data Modulation
(UWB Puls Generation)
&
Correlation Receiver
&
BaseBand IC
Antenna
diversity
DPDT
Switch
Broadband
Filter
LNA
Balun
BFP700series
© 2007 Infineon Technologies AG. All rights reserved.
Page 30
Bluetooth (BT)
Front End for Bluetooth Class 1
> Applications > Consumer
2.45GHz
RX
Transceiver
TX
Oscillator
Module
LNA
MMIC:
RF Transistor:
ANT SW
BGA622L7, BGA428
BGA427
BFP640 / 640F / 620
620F / 540F / 640
BFP700series
BAR88x, BAR90x
BAR63x, BAR64x
BAR65x
PA
BFP450
LO
BFP420, BFP540, BFP620F
BFP640, BFR340F, BFR360F
BBY5X, BBY6X
© 2007 Infineon Technologies AG. All rights reserved.
Page 31
Low Noise Block (LNB)
Twin LNB - Block Diagram
> Applications > Consumer
IF Amplifiers
LNA
Output 1
H
LNA2
Switch
Matrix
12 GHz
V
IF
950-1950MHz
Output 2
LNA2
BFP740, BFR740L3
Mixer
BF776
DRO
BFP420, BF776
IF Amplifier RF-Tr.:
MMIC:
Switch
Oscillator
BFP420, BFP405
BFP540
BGA612 / 614 / 616
BAR88x, BAR90x,
BAR63x, BAR64x,
BAR65x
New Products in RED !
© 2007 Infineon Technologies AG. All rights reserved.
Page 32
SMM310 Si-MIC for Portable Applications
> Applications > Consumer
Silicon Microphone
R
CMbias
VMICN
VDD
Ccouple
OUT
INP
CEMC
(30pF)
INM
VSS
Ccouple
SMM310 Si-Microphone with
integrated EMC-Capacitor
VMICN
Baseband Chip
© 2007 Infineon Technologies AG. All rights reserved.
Page 33
Active Bias Controller/Universal Current Source
for GaAs and BJT Transistors/MMICs
> Applications > Consumer
Vcc (2 … 18V)
~ 0.7V
Bip-Tr.
Input
Matching
Current Source
Output
Matching
BCR400W, BCR401R, BCR402R, BCR410W
© 2007 Infineon Technologies AG. All rights reserved.
Page 34
Bridge Rectifier Diode for Power Supplies
> Applications > Consumer
AC
BGX50A
Power
Supply IC
DC
EMI/EMC filter
Bridge Rectifier
BGX50A
Recommended Products in RED !
© 2007 Infineon Technologies AG. All rights reserved.
Page 35
PC Motherboard
Protection devices and discrete components
> Applications > Consumer
ESD/EMI
Interface protection
Discretes content
CPU
USB
Firewire
TV Out
Video
RAM
Hi-Speed
SRAM cache
Memory
Clock
Generator
DRAM
(Main Memory)
Video
Processor
AF Transistors for
• current & voltage supply
• switching and drivers
AF switching diodes
BIOS Boot
Memory
Firmware
VGA Out
CardReader
External Storage
LAN
Network
bus
Local bus
to
SCSI Bus
Bridge
Local bus
to
PCI Bus
Bridge
Power
on
reset
Clipping & Clamping
Schottky Diodes
Motherboard
Protection diode
ESDOP8RFL, ESD5V0Sx, ESD8VOLxx
AF transistors
BCRxx, BCxx, SMBTxx
AF Diodes
BATxx, BASxx, BAVxx
ESD/EMI HiPAC & TVS diodes
HiPAC
BGF110, BGF104, BGF109, BGF100, BGF200
)
Discrete Solution* ESDOP8RFL, ESD5V0Sx, ESD8VOLxx
© 2007 Infineon Technologies AG. All rights reserved.
*) w/o EMI filtering
Page 36
Table of Contents
Applications
Mobile Communication
Consumer
Automotive & Industrial
ESD/EMI Protection
Lighting
© 2007 Infineon Technologies AG. All rights reserved.
Page 37
Tire Pressure Monitoring System (TPMS), Remote
Keyless Entry (RKE) and Remote Start Applications
> Applications > Automotive
TX
TX
RX
TX
f2
f1
TX
TX
RKE KeyFob
© 2007 Infineon Technologies AG. All rights reserved.
Page 38
TPMS, RKE & Remote Start
KeyFob, Receiver Solution for long Antenna Range
> Applications > Automotive
e.g. 315 / 434 MHz
TX
Receiver IC
TPMS
Bandpass Filter
e.g. TDA523X
(Optional)
TX
Rx LNA
RKE
BFP460*, BFP540ESD*
*ESD Hardened
TX
Rx ESD
ESDxPyRF-series
Protection
RKE KeyFob for Remote Start e.g. Aircon etc.
Osc/Buffer
RF Transistors: BFR182
Tx PA
RF Transistors: BFP450
© 2007 Infineon Technologies AG. All rights reserved.
Page 39
Car Alarm Transceiver Solution
(KeyFob and Car Unit)
> Applications > Automotive
e.g. 315 / 434
MHz
RX
Transceiver IC
e.g. TDA5255
TX
LNA
ESD Hardened RF Transistors:
BFP460*, BFP540ESD*
* ESD Hardened
PA
MMIC: BGA616
RF Transistors: BFP450, BFP650
ANT SW
© 2007 Infineon Technologies AG. All rights reserved.
BAR50x
BAR89x
BAR90x
Page 40
Global Positioning System (GPS)
GPS Receiver
> Applications > Automotive
1575.42 MHz
Amp Mixer BPF
Signal
Processing
(opt.)
LO
GPS Receiver/ASIC
LNA
BGA615L7, BGA622(L7), BGA428
BFP640, BFP460*, BFP540ESD* – * ESD Hardened RF-Transistor
ESD Protection
ESDxPyRF-series
Recommended Products in RED !
© 2007 Infineon Technologies AG. All rights reserved.
Page 41
Active Antenna (Tuner, Cellular, GPS, SDARS...)
Example: Solution for SDARS Radio 2332.5 - 2345 MHz
> Applications > Automotive
1st LNA 2nd LNA
BPF
3rd LNA
Coax cable
Approx. 14dB loss
1st/ 2nd LNA
BFP740, BFP640, BFP640F
3rd LNA
BFP650
ESD Protection ESDxPyRF-series
Recommended Products in RED !
© 2007 Infineon Technologies AG. All rights reserved.
Page 42
ZigBee
low power digital radio system up to 2.5 GHz
> Applications > Automotive
RF IC
LNA
Driver
PIN Diode
Switch
RF Transistors:
MMIC:
BFR705L3RH, BFP540ESD, BFP700series
BGA622, BGA428
RF Transistors:
MMIC:
BFP450, BFP650
BGA612, BGA614, BGA616, BGA420
BAR88x, BAR90x, BAR63x, BAR64x, BAR65x
© 2007 Infineon Technologies AG. All rights reserved.
Page 43
Electronic Toll Collect (ETC)
ETC – 5.8GHz Electronic Toll Collect
> Applications > Automotive
Rx RF
Interstage
Rx IF
Tx RF
Interstage
Tx IF
RF TOP
LNA
RF Transistors: BFP640F, BFP700series
LO
BBY5X..., BBY6X...
PA
RF Transistors: 2xBFP520+BFP650
ANT SW
BAR50-02L
© 2007 Infineon Technologies AG. All rights reserved.
Page 44
Discrete Based Oscillator
for RKE (Remote Keyless Entry) KeyFob
> Applications > Automotive
VCC (2.4 V … 3.2 V)
RFOUT
VON
f = 315 MHz
ICC = 6 mA (CW-mode)
POUT = 8.3 dBm @ 50 Ȏ
RF-Transistor: BFR182
Recommended Products in RED !
© 2007 Infineon Technologies AG. All rights reserved.
Page 45
Schottky Diodes for 24GHz Radar System
> Applications > Automotive
Double-Balanced
Mixer
24GHz
BB/IF
LNA
Balun
Balun
RF Schottky Diode
Buffer
Amplifier
VCO
BAT24-02LS
© 2007 Infineon Technologies AG. All rights reserved.
Page 46
Automotive CAN Network
ESD-protection of CAN Bus Transceiver
> Applications > Automotive & Industrial
- w/o external TVS: 8kV contact
- w external TVS: >30kV contact
CAN Transceivers
CAN High
CAN
Transceiver
CAN Low
CAN Bus
CAN-Bus
ESD Protection
ESD24VS2B
© 2007 Infineon Technologies AG. All rights reserved.
Page 47
Engine/ Injection Management
> Applications > Automotive
Schottky diodes
BAS16
BAS21
BAS28
BAS70-05
Engine Management Unit
AF diodes
BAV170
BAW101
Gasoline Injection Management Unit
Transistor:
BCP51
BCV46
BC847PN
BC817
BC807
Small Scale
Integration Devices
Active Bias
Controller:
BCR400W or
BCR410W
LED driver:
BCR40xU
© 2007 Infineon Technologies AG. All rights reserved.
Page 48
Convenience and Safety
> Applications > Automotive
Airbag Module
Door Module:
Side Mirror
Window Lifter
Seat Drives
E.g. door module :
AF Transistors
Digital Transistors
AF Diodes
LED driver
CAN ESD Protection
3x BC847S, 5x BC857S, 1x BC817-40, BC817SU
2x BCR135, 2x BCR185
1x BAT64, 2x BAV70
BCR40xU
ESD24VS2B
© 2007 Infineon Technologies AG. All rights reserved.
Page 49
Home: Comfort, Control and Security
> Applications > Industrial
Wireless sensor hub
Wireless
Glass break detector
Wireless
smoke detector
Thermostat Control
(radiator side)
Wireless door/
window contact
Wireless motion sensor
© 2007 Infineon Technologies AG. All rights reserved.
Thermostat Control
(operator side)
Page 50
Home Comfort, Control and Security
Thermostat Control – radiator side (EU: 868 MHz)
> Applications > Industrial
RF - Tx
µ controller
SPDT
RF - Rx
e.g. TDA5255
Stepper
motor
driver
LNA
BFP460*, BFP540ESD* – * integrated ESD protection
System ESD
Protection
ESDxPyRF-series
Driver
PIN Diode
Switch
Discrete:
MIMIC:
BFP450 + BFP405
BGA622L7, BGA612, BGA614, BGA616
BAR88x, BAR90x, BAR63x, BAR64x, BAR65x
© 2007 Infineon Technologies AG. All rights reserved.
Page 51
Home Comfort, Control and Security
Thermostat Control – operator side
> Applications > Industrial
RF - Tx
µ controller
&
NV memory
LCD
display
RF - Rx
Switch
e.g. TDA5255
Touch Pad
LNA
BFP460*, BFP540ESD* – * integrated ESD protection
System ESD
Protection
ESDxPyRF-series
Driver
Discrete:
MIMIC:
PIN Diode
Switch
BAR88x, BAR90x, BAR63x, BAR64x, BAR65x
BFP450 + BFP405
BGA622L7, BGA612, BGA614, BGA616
© 2007 Infineon Technologies AG. All rights reserved.
Page 52
Home Comfort, Control and Security
Wireless smoke sensor hub (EU: 868MHz / NAFTA: 434MHz)
> Applications > Industrial
RF - Tx
µ controller
&
NV memory
RF - Rx
Switch
e.g.TDA525x
Bus I/F
LNA
BFP460*, BFP540ESD* – * integrated ESD protection
ESD Protection
ESDxPyRF-series
Driver
Discrete:
MIMIC:
PIN Diode Switch
BAR88x, BAR90x, BAR63x, BAR64x, BAR65x
BFP450 + BFP405
BGA622L7, BGA612, BGA614, BGA616
© 2007 Infineon Technologies AG. All rights reserved.
Page 53
Home Comfort, Control and Security
Wireless smoke sensor
> Applications > Industrial
RF - Tx
µ controller
&
NV memory
RF - Rx
Switch
e.g.TDA525x
Smoke
sensor
LNA
*BFP460, *BFP540ESD – *integrated ESD protection
ESD Protection
ESDxPyRF-series
Driver
Discrete:
MIMIC:
PIN Diode
Switch
BFP450 + BFP405
BGA622L7, BGA612, BGA614, BGA616
BAR88x, BAR90x, BAR63x, BAR64x, BAR65x
© 2007 Infineon Technologies AG. All rights reserved.
Page 54
Home Comfort, Control and Security
RF controlled set top box
> Applications > Industrial
Connection Ports
MODEM
SMPS
RF - Rx
e.g.TDA52XX
µC
Smart Card
HDD
USB
IR
sensor
uCOM
Controls
LNA
BFP460*, BFP540ESD* – * integrated ESD protection
ESD Protection
ESDxPyRF-series
© 2007 Infineon Technologies AG. All rights reserved.
Page 55
RF Metering, AMR (Automatic meter reading)
RKE Based
433.9MHz
Mixer
BPF
LO
Driver Amplifier
3x BFP460*
* integrated ESD
LNA
BFP405
ESD Protection
ESDxPyRF-series
TRX
&
Signal
Processing
PIN Diode BAR88x, BAR90x, BAR63x
BAR64x, BAR65x
Switch
Varactor
Diode
© 2007 Infineon Technologies AG. All rights reserved.
BBYxx
Page 56
Table of Contents
Applications
Mobile Communication
Consumer
Automotive & Industrial
ESD/EMI Protection
Lighting
© 2007 Infineon Technologies AG. All rights reserved.
Page 57
Cellular Phone
ESD/EMI-Protection and RF Passive Integration
ESD5V0Sx-series
TV
USB
BGF111
LCD
LCD
BGF108/BGF109
BGF109L
1800/1900
USB
USB
ESD8V0L2B-03L
850/900
ESD5V0Sx-series
BGF105/BGF106
SD
SIMCard
Card
BGF110
MMC
BGF104
Keypad
Keypad
ESD5V0Sx-series
I/O
I/O Data
Data
ESD5V0Sx-series
HiPAC Product Portfolio
Transceiver
Quadband
SIM Card
TX
Digital IC
Camera
RX
ESD/EMI-Protection
Power
Supply
BASxx/BATxx
1800/1900
850/900
ESD-Protection
BGH92
BGH182
PA
Antenna
SwitchModule
BGF100/BGF200
Analog IC
> Applications > ESD/EMI Protection
H3-filter + Balun
Recommended Products in RED !
© 2007 Infineon Technologies AG. All rights reserved.
Page 58
Portable System
MP3 player, digital camera, camcorder…
> Applications > ESD/EMI Protection
USB
LCD
Firewire
LSI
MemCard
TV In/Out
VGA Out
Si-MIC
ESDOP8RFL, ESD8VOLxx
Protection diode
ESD/EMI HiPACs
HiPAC for LCD
Discrete Solution*)
BGF108, BGF109, BGF109L
HiPAC for MMC/SD MemCard
Discrete Solution *)
BGF104, BGF110
ESD0P8RFL, ESD5V0Sx, ESD8V0Lxx
HiPAC for Microphone
Discrete Solution *)
BGF100, BGF200
ESD0P8RFL, ESD5V0Sx, ESD8V0Lxx
ESD0P8RFL, ESD5V0Sx, ESD8V0Lxx
© 2007 Infineon Technologies AG. All rights reserved.
*) w/o EMI filtering
Page 59
ESD/EMI Protection for Microphone Interface
(Differential Mode/Stereo) with BGF100
> Applications > ESD/EMI Protection
VMIC (A2 or A4)
dep. on Application
15 kV
VMIC
A2
A4
BGF100
B4
B1
2 kV
100nF
MICP1
VMICP
MIC
15 kV
VMICN
C3
A3
2 kV
B2
C4
C1
MICN1
100nF
C3
A3
B2
C2
Baseband IC
© 2007 Infineon Technologies AG. All rights reserved.
Page 60
ESD/EMI Protection for Microphone Interface
(pseudo differential and/or Single-Ended Mode/Mono) with BGF200
> Applications > ESD/EMI Protection
Rpull-up,
several kȍ
VMIC
A3
15 kV
VMICP
BGF200
BGF200
2 kV
B1
100nF
MICP1
C3
C1
MIC
B2 B3 C2
MICN1
100nF
VMICN
A2
750nF
*Optional for common
-mode suspression
© 2007 Infineon Technologies AG. All rights reserved.
Baseband IC
Page 61
ESD/EMI Protection for Microphone Interface
(pseudo Single-Ended Mode) with BGF200
> Applications > ESD/EMI Protection
RCMbias,
several kȍ
VMIC
VDD
SMM310
A3
15 kV
BGF200
BGF200
2 kV
B1
OUT
100nF
MICP1
C3
C1
CEMC
(30pF)
SMM310 Si-Microphone with
integrated EMC-Capacitor
B2 B3 C2
MICN1
100nF
VSS
A2
750nF
*Optional for common
-mode suspression
© 2007 Infineon Technologies AG. All rights reserved.
Baseband IC
Page 62
High Speed MMC Card ESD/EMI Protection
with BGF104
> Applications > ESD/EMI Protection
MMC Card Connector
For x8 HSMMC
Card Only
C9
C1
C10
C2
C11
C3
C4
C5
C12
C6
C13
C7
x4 HSMMC Card
C8
DAT2
DAT3
CMD
VSS1
VDD
CLK
VSS2
DAT0
DAT1
BGF104
15 kV
R*
2 kV
VDD
CLK
CMD
DAT0
DAT1
DAT2
DAT3
Flash
Controller IC
* not applicabel for CLK line
© 2007 Infineon Technologies AG. All rights reserved.
Page 63
SIM Card Interface Protection
with BGF105
> Applications > ESD/EMI Protection
15 kV
15 kV
C2
2 kV
BGF105
CLK
RST
VCC
I/O
C1
C3
B1
A2
B3
A3
VCC
RST
CLK
I/O
GND
Flash
Controller IC
SIM Card Connector
B2
© 2007 Infineon Technologies AG. All rights reserved.
Page 64
ESD/EMI protection for digital displays
with BGF109 for LCD, TFT applications
> Applications > ESD/EMI Protection
2 kV
LCD Source
Driver
10
10
15 kV
PD[15:0]
PD[15:0]
20
VSYNC
HSYNC
DOTCLK
ENABLE
Flash
Controller IC
2 kV
10
10
VSYNC
HSYNC
DOTCLK
ENABLE
FPC 1)
1)
Flexible Printed Circuitry
HiPAC BGF109
© 2007 Infineon Technologies AG. All rights reserved.
Page 65
Secure Digital Card ESD/EMI Protection
BGF110
Flash Controller IC
> Applications > ESD/EMI Protection
VSD
CMD
CLK
DAT0
DAT1
DAT2
CD
WP
WP+CD
DAT3_PU
DAT3
DAT3_PD
BGF110
2 kV
R*
15 kV
DATA1
DATA0
VSS2
CLK
VSD
VSS1
CMD
DATA3
DATA2
CD
WP
WP+CD
SD Card Connector
C8
C7
C6
C5
C4
C3
C2
C1
C9
SD Card
Note:
WP: Write Protection
CD: Card Detection
PU: Pull-Up
PD: Pull Down
* not applicable for CLK, DAT3, CD,
WP and WP+CD lines
© 2007 Infineon Technologies AG. All rights reserved.
Page 66
ESD/EMI Protection for Digital Data Interface
with 4/7/10-Channel Diode & Low-Pass Filter
> Applications > ESD/EMI Protection
2 kV
15 kV
...
I/O
N Data Lines
IC-Level
ESD Sensitive
Device
N channels
HiPAC
BGF111 (1 Channel)
BGF105 (4 Channel)
BGF108 (7 Channel)
BGF109 (10 Channel)
New Products in RED !
© 2007 Infineon Technologies AG. All rights reserved.
Page 67
General Purpose ESD & Surge Protection
with 1-5-Channel TVS Diode Arrays (upto 5V Supply Voltage)
> Applications > ESD/EMI Protection
I/O
I/O
I/O
I/O
ESD
Sensitive
Device
GND
Uni-Directional : ESD5V0S1U-03W (1-channel)
Bi-Directional:
ESD5V0S2U (2-channel)
ESD5V0S5US (5-channel)
ESD8V0L1B-02LRH (1-channel)
ESD8V0L1B-03L (2-channel)
© 2007 Infineon Technologies AG. All rights reserved.
Page 68
General Purpose ESD & Surge Protection
with 2-Channel TVS Diode Array (upto 24V Supply Voltage)
> Applications > ESD/EMI Protection
ESD
sensitive
device
I/O
I/O
ESD Diode:
ESD24VS2B (2-Channel)
© 2007 Infineon Technologies AG. All rights reserved.
Page 69
High-Speed ESD & Surge Protection
Designed for USB2.0, 10/100 Ethernet, Firewire, …
> Applications > ESD/EMI Protection
ESD
sensitive
device
I/O
ESD
sensitive
device
I/O
ESD
sensitive
device
I/O
I/O
CL = 8.5pF
CL = 2pF
ESD Diode:
ESD8V0L1B-02LRH
ESD Array:
ESD8V0L2B-03L
© 2007 Infineon Technologies AG. All rights reserved.
CL = 4pF
Page 70
ESD, EFT & lightning protection
ADSL, ISDN, WAN or other telecom application (rail-to-rail)
> Applications > ESD/EMI Protection
ESD
sensitive
device
V+
TVS Diode Array: ESD70VU2RR-07
© 2007 Infineon Technologies AG. All rights reserved.
Page 71
Automotive CAN Network
ESD-protection of CAN Bus Transceiver
> Applications > ESD/EMI Protection
- w/o external TVS: 8kV contact
- w external TVS: >30kV contact
CAN Transceivers
CAN High
CAN
Transceiver
CAN Low
CAN Bus
CAN-Bus
ESD Protection
ESD24VS2B
© 2007 Infineon Technologies AG. All rights reserved.
Page 72
RF Antenna Port
ESD Protection of with Low-Capacitance ESD Diodes
> Applications > ESD/EMI Protection
ESD Sensitive
RF FE
RF Receiver
Signal
Processing
ESD Protection &
ANT Matching
ESD Protection
ESD0P8RFL (CL = 0.8 pF)
ESD1P0RFW (1-Channel) (CL = 1.0 nF)
ESD1P0RFS (2-Channel) (CL = 1.0 pF)
Recommended Products in RED !
© 2007 Infineon Technologies AG. All rights reserved.
Page 73
Reverse Polarity Protection
Protection against reverse polarity
> Applications > ESD/EMI Protection
DC
DC
+Vs
GND
+Vs
GND
GND/
+Vs
+Vs/
GND
+Vs
DC protected circuit
GND
DC protected circuit
Prevents damage to the circuit
System works with reverse polarity
Schottky Diode:
BAS3005A-02V,
BAS3010S-03LRH*, BAS3010A-03W
BAS3020B*
Schottky Diode Array:
BAS3007A-RPP*
© 2007 Infineon Technologies AG. All rights reserved.
*New Products on request
Page 74
Clipping and Clamping
Transient Voltage Suppression
> Applications > ESD/EMI Protection
After Filtering
Digital spikes
Discrete spike filter
Protection Diode:
BAT17xx, BAT62xx, BAT54xx, BAT64xx,
BAT68xx, BAS40xx, BAS70xx, BAS125xx
© 2007 Infineon Technologies AG. All rights reserved.
Page 75
Table of Contents
Applications
Mobile Communication
Consumer
Automotive & Industrial
ESD/EMI Protection
Lighting
© 2007 Infineon Technologies AG. All rights reserved.
Page 76
Why are LED-Drivers needed?
> Applications > Lighting
Control
-Brightness Control
-LED Cluster Control
-Binning Compensation
-RGB Color Management
-Realisation of Bus-Interfaces
for Parallel Driving
Protection
-Overvoltage
-Overcurrent
-Excessive Temperature
© 2007 Infineon Technologies AG. All rights reserved.
Page 77
Driving LED-Chains directly (up to 65 mA)
> Applications > Lighting
Vcc/
GND
GND or
PWM In
GND/
Vcc
Reverse Polarity Protection
* New product on request
LED-Driver:
BCR401R/W/U,
BCR402R/W/U, BCR405U
Schottky Diode Array: BAS3010S-03LRH*, BAS3010A-03W
BAS3020B*
© 2007 Infineon Technologies AG. All rights reserved.
Page 78
Driving LED-Chains using a Booster Transistor
(up to 500 mA)
> Applications > Lighting
Vcc/
GND
GND or
PWM In
GND/
Vcc
Reverse Polarity Protection
LED-Driver:
BCR401R/W/U,
BCR402R/W/U, BCR405U
Booster Transistor:
BCX55-16, BCX68-25, BC817SU
BAS3010S-03LRH*, BAS3010A-03W
Schottky Diode Array: BAS3020B*
* New product on request
© 2007 Infineon Technologies AG. All rights reserved.
Page 79
Table of Contents
Applications
RF Discretes
Schottky Diodes
HiPAC, TVS Diodes, Silicon Mircrophone
LED Drivers
AF Discretes
General Information
© 2007 Infineon Technologies AG. All rights reserved.
Page 80
Table of Contents
RF Discretes
Introduction
RF Transistors
RF MMICs
RF Diodes
RF PIN Diodes
RF Varactor Diodes
RF Mosfet
© 2007 Infineon Technologies AG. All rights reserved.
Page 81
RF Product Range and Target Applications
> RF Discretes > Introduction
RF Products
RF Building Blocks
Low Noise Amps
50W Driver stages
Single chip VCOs
gain blocks
Applications
Cellular Terminals
Cordless Terminals
Base Stations
LNB Downconverter
CATV Amplifier
RF MMIC
RF Transistors
FM/VHF/UHF/SAT Tuner
Set Top Box
RF MOSFETs
RF PIN Diodes
RF Varactor Diodes
WLAN
Wireless Local Loop
RF Schottky Diodes
© 2007 Infineon Technologies AG. All rights reserved.
Page 82
Table of Contents
RF Discretes
Introduction
RF Transistors
RF MMICs
RF Diodes
RF PIN Diodes
RF Varactor Diodes
RF Mosfet
© 2007 Infineon Technologies AG. All rights reserved.
Page 83
RF Transistors Portfolio at a glance
> RF Discretes > RF Transistors
Generation
fT 7.
SiGe:C for Ultra Low Noise
Ultra Low Noise
SiGe!
fT 6. Generation
BFP640, BFP640F, BFP650
BFP620, BFP620F
SiGe for very Low Noise Amp.
fT 5. Generation
fT
fT
fT
fT
fT
fT
fT
fT
fT
45 GHz
ESD!
4. Generation
BFP405, BFP420, BFP450
BFP405F, BFP420F
25 GHz
4minus Gen.
ESD!
23 GHz
3+ Generation
15 GHz
3. Generation
6 - 8 GHz
2. Generation
5 - 6 GHz
BFP520(F), BFP540(F)
BFP540ESD
integr. ESD 1000V*
BFP460, BFR460L3
DUAL BFS4XX in TSLP-6
integr. ESD 1500V*
BFR340F, BFR360F, BFR380F
BFR3XX in TSLP-3
for VCO & RF modules
DUAL BFS3XX in TSLP-6
... BFR193(T) ... BF771(W), BF772 ...
BFR193L3, BFR949L3
G.P. in TSLP
... BFR93(T) ... BFP194, BF770A ...
1. Generation
2.5 GHz
... BFS17W, BFS17P, BF799W, BF517 ...
© 2007 Infineon Technologies AG. All rights reserved.
* Typ. HBM
Page 84
BFP740series
… Keeping the Leadership in RF Performance
> RF Discretes > RF Transistors
Ultra Low Noise SiGe:C
Heterojunction Bipolar Transistor (HBT)
0.5 dB
1.0 dB
1.5 dB
NFmin at 6GHz
Performance
Present solutions for ultra low noise at 6GHz
fT of 42 GHz
NF = 0.5 dB at 2 GHz
NF = 0.8 dB at 6 GHz
Gms = 28 dB at 1.8 GHz
Benefits & Arguments
Applications (LNA)
BFP740F
SOT343
2.0 x 1.25 x 0.9mm
TSFP-4
1.2 x 0.8 x 0.55mm
BFR740L3RH
Leadless
BFP740
Flatlead
Standard
Lowest noise figure level currently available
in the SiGe:C market
Comparable to GaAs MESFET and pHEMT
No negative supply voltage required (unlike GaAs FETs)
High Gain & Low Current Operation
1.2 – 1.3GHz, 1.575GHz GPS-Systems
2.1 – 2.4GHz: UMTS, DECT (EU), 2.4 GHz ISM
2.33 GHz, 2.6 GHz SDARS Satellite Radio (NA),
DMB
5 – 6 GHz: WLAN, Cordless Phone, DSRC
3 – 10 GHz: UWB (NA)
TSLP-3
1.0 x 0.6 x 0.32mm
12 GHz Satellite TV (Asia, EU, NA), LNB
© 2007 Infineon Technologies AG. All rights reserved.
Page 85
Infineons Ultra Low Noise SiGe:C HBTs
NEW
BFR700L3RH (reduced height) Series
> RF Discretes > RF Transistors
1.0x0.6mm height 0.32mm max.
1.0x0.6mm height 0.32mm max.
Î Outstanding Performance
Î Wide Range of Wireless
Applications up to 10GHz
Î High Gain
Î Ultra Low Noise
Î Low Power Consumption
Î Low Current Operation
Î High Gain
Î Ultra Low Noise
Î portable GPS, WLAN, UWB
Î Medium Power Device
Î High IP3, P-1dB
Î Very Low Noise
Î Discrete PA (driver)
Î 5.8GHz Cordless Phone
BFR740L3RH
BFR705L3RH
BFR750L3RH
*Key Data:
Vceo = 4V, Icmax = 30mA
NF = 0.5dB at 1.8GHz, 3V, 8mA
Gms = 24 dB at 1.8GHz, 3V, 25mA
*Key Data:
Vceo = 4V, Icmax = 10mA
NF = 0.5dB at 1.8GHz, 3V, 3mA
Gms = 24 dB at 1.8GHz, 3V, 7mA
*Key Data:
Vceo = 4V, Icmax = 90mA
NF = 0.6dB at 1.8GHz, 3V, 25mA
Gms = 20 dB at 1.8GHz, 3V, 60mA
P1dB = 17dBm at 1.8GHz, 3V, 60mA
IP3 = 29dBm at 1.8GHz, 3V, 60mA
* for more details pls. check datasheet
© 2007 Infineon Technologies AG. All rights reserved.
Page 86
Wideband Feedback LNA for RF Discretes > RF Transistors
Applications
315, 433 MHz: Remote Keyless Entry
900 MHz: Cellular, 900 MHz ISM, etc.
1575 MHz: GPS
2400 MHz: 2.4 GHz ISM, WLAN, etc.
5150 MHz: IEEE802.11a WLAN
Features
The complete amplifier only uses 16mm² of PCB area
A simple, low-cost general-purpose wideband LNA
application
Gain of 19.8-10.0 dB @ 315-5100 MHz
Noise Figure of 1.1 – 1.5 dB @ 315-5100 MHz
Leadless
BFR740L3RH
NEW
TSLP-3
1.0 x 0.6 x 0.32mm
© 2007 Infineon Technologies AG. All rights reserved.
Page 87
LNA for 1575 MHz GPS (Global Positioning System)
Using the SiGe Transistor BFP740F in TSFP-4 Package
> RF Discretes > RF Transistors
Applications
1575.42 MHz GPS LNA
Overview
Gain of 19.8 dB @ 1575 MHz
Noise Figure of 0.67 dB @ 1575 MHz
Input P1dB of -18.0 dBm @ 1575 MHz
Output P1dB of +0.8 dBm @ 1575 MHz
Input 3rd Order Intercept of -1.7 dBm @ 1575 MHz
Current < 8.2 mA from a 3.0 Volt power supply
Input / Output Return Loss 10 dB or better
© 2007 Infineon Technologies AG. All rights reserved.
Page 88
Narrowband 5 to 6 GHz (IEEE802.11a WLAN) LNA
Using SiGe RF Transistor BFP740F
> RF Discretes > RF Transistors
Applications
5 to 6 GHz (IEEE802.11a WLAN) LNA
Excellent Results
NF ~ 1.1 dB on PCB @ 5 to 6 GHz
substantial improvement over BFP640
… and better than GaAs pHEMT
Application Board on request
NF ~ 1.1 dB
Flatlead
BFP740F
TSFP-4
1.2 x 0.8 x 0.55mm
© 2007 Infineon Technologies AG. All rights reserved.
Page 89
SiGe RF Transistors
BFP600 Family
> RF Discretes > RF Transistors
70 GHz fT - Silicon Germanium technology
Gold metallization for extra high reliability
BFP640, 650
BFP650
Standard
BFP640/F
SiGe!
BFP640F
For medium power
amplifiers
Ideal for low phase noise
oscillators
Output compression point
P-1dB = 18 dBm at 1.8 GHz
Max. available Gain
Gma = 21 dB at 1.8 GHz
Noise figure
NF = 0.8 dB at 1.8 GHz
Flatlead
For a wide range of
wireless applications
Ideal for LNB, CDMA and
WLAN applications
High gain, low noise RF
transistor
Provides outstanding
performance
High maximum stable gain
Gms = 24 dB at 1.8 GHz
Outstanding noise figure
NF = 0.65 dB at 1.8 GHz
NF = 1.4 dB at 6 GHz
SOT343
2.0 x 1.25 x 0.9mm
TSFP-4
1.2 x 0.8 x 0.55mm
© 2007 Infineon Technologies AG. All rights reserved.
Page 90
Low-Current LNA for 1575 MHz GPS Applications
Using the SiGe BFP640 Transistor
> RF Discretes > RF Transistors
Applications
1575.42 MHz GPS LNA
Overview
Gain of 15.2 dB@ 1575 MHz
Noise Figure of 0.95 dB @ 1575 MHz
Input P1dB of -18.7 dBm @ 1575 MHz
Output P1dB of -4.5 dBm @ 1575 MHz
Input 3rd Order Intercept of -1.1 dBm @ 1575 MHz
Current of 4.9 mA from a 3.0 Volt power supply
Input/Output Return Loss better than 10 dB
© 2007 Infineon Technologies AG. All rights reserved.
Page 91
LNA for 2.3 – 2.5 GHz ISM Band Applications
Using the SiGe Transistor BFP640
> RF Discretes > RF Transistors
Applications
2.3 GHz SDARS, 2.4 GHz (Bluetooth, WLAN, other
2.4 GHz ISM applications)
Overview
Gain = 15.5 dB @ 2400 MHz
Noise Figure ~ 0.96 dB @ 2400 MHz
Input P1dB of -11.3 dBm @ 2400 MHz
Output P1dB +3.2 dBm @ 2400 MHz
Input 3rd Order Intercept +11.6 dBm @ 2400 MHz
Current of 6.7 mA from a 3.0 Volt power supply
© 2007 Infineon Technologies AG. All rights reserved.
Page 92
LNA for Satellite DMB (Digital Multimedia Broadcasting)
Using the BFP640 Transistor
> RF Discretes > RF Transistors
Applications
2630 – 2655 MHz Digital Multimedia Broadcasting
Overview
Gain = 14.8 dB@ 2642.5 MHz
Noise Figure of 1.0 dB @ 2642.5 MHz
Input P1dB of -11.6 dBm @ 2642.5 MHz
Output P1dB of + 2.2 dBm @ 2642.5 MHz
Input 3rd Order Intercept of +8.7 dBm @ 2642.5 MHz
Current of 5.8mA from a 3.3 Volt power supply
© 2007 Infineon Technologies AG. All rights reserved.
Page 93
Two-Stage LNA for 5 to 6 GHz (IEEE802.11a WLAN)
Using SiGe Transistor BFP640
> RF Discretes > RF Transistors
Applications
Frequency Range 5 to 6 GHz
Overview
Low Cost Solution
Results achieved on FR4
Supply Voltage 3.3V
DC Current 16,2 mA
Gain 22.3 dB @5350 MHz
20.4 dB @5825 MHz
BFP640
1st stage
BFP640
2nd stage
Noise Figure
1.54 dB @5350 MHz
1.62 dB @5825 MHz
Input P1dB
-14.8 dBm @5825 MHz
© 2007 Infineon Technologies AG. All rights reserved.
Page 94
Two-Stage LNA for 5 to 6 GHz (IEEE802.11a WLAN)
Using SiGe Transistor BFP640 – reduced ext. components
> RF Discretes > RF Transistors
Applications
Frequency Range 5 to 6 GHz
Overview
Low Cost Solution
only 7 passive (3xC, 3xR, 1xL)
Results achieved on FR4
Total PCB area 40mm²
Supply Voltage 3V
DC Current 9 mA
Gain (can be increased by Ic)
10.1 dB @5500 MHz
Noise Figure
1.4 dB @5500 MHz
© 2007 Infineon Technologies AG. All rights reserved.
Page 95
8 – 9 GHz fT G.P. RF Transistors in TSLP-3-1
> RF Discretes > RF Transistors
Bipolar 8 and 9 GHz Silicon technology in Leadless Packages
Ideal for General Purpose RF Applications e.g. LNAs, Oscillators and VCO Modules
BFR193L3
BFR949L3
Ideal for Low Noise and High Gain Boradband
Amplifiers at Collector Currents from 1mA to
20mA
Transition Frequency of 9GHz
NF of 1.0dB at 1GHz
VCE0=10V, IC=35mA
VCE0=12V, IC=80mA
For low noise, high-gain amplifiers up to 2 GHz
For linear broadband amplifiers
Transition Frequency of 8 GHz
NF of 1.2 dB at 900 MHz
Footprint 1.0 x 0.6 x 0.4mm only!
© 2007 Infineon Technologies AG. All rights reserved.
Page 96
14GHz RF Transistors
> RF Discretes > RF Transistors
Bipolar 14 GHz Silicon technology in Flatlead and Leadless Packages
Ideal for Low Phase Noise Oscillators and VCOs
BFR340F/L3
BFR360F/L3
Ideal for Low Current and
Amplifiers and Oscillators
High Transition
Frequency of 14GHz
High Insertion Gain
Low Voltage/ Low Current
Operation
For Low Voltage / Low
Current Applications
For Oscillators up to
3.5GHz and Pout >
10dBm
For Low Noise Amplifiers
Low Noise Figure: 1.0 dB
at 1.8 GHz
VCE0=6V, IC=10mA
BFR380F/L3
High Current Capability and
Low Noise Figure for Wide
Dynamic Range
Applications
Ideal for Low Phase Noise
Oscillators up to 3.5GHz
Low Voltage Operation
Low Noise Figure: 1.1dB
at 1.8GHz
VCE0=6V, IC=35mA
VCE0=6V, IC=80mA
TSFP-3
Package
BFRxxxF
TSLP-3
Package
BFRxxxL3
Footprint 1.0 x 0.6 x 0.4mm only!
© 2007 Infineon Technologies AG. All rights reserved.
Page 97
14GHz fT Twin RF Transistors in TSLP-6
VCO and RF Modules
> RF Discretes > RF Transistors
TWIN Type 14GHz Low Phase Noise RF-Transistors in Ideal for Oscillators and VCOs Modules
Two built in Transitors in 6pin Thin Small Leadless Package TSLP-6
L3
0
6
R3
2
F
xB
L3
0
8
R3
F
xB
BFS360L6
+
L3
BFS380L6
2
BF
For Low Voltage / Low
Current Applications
For Oscillators up to
3.5GHz and Pout > 10dBm
For Low Noise Amplifiers
Low Noise Figure TR1 and
TR2 of 1.0 dB at 1.8GHz
TSLP-6-1
Package
60
3
R
High Current Capability and
Low Noise Figure for Wide
Dynamic Range Applications
Ideal for Low Phase Noise
Oscillators up to 3.5GHz
Low Voltage Operation
Low Noise Figure TR1 and
TR2 of 1.1dB at 1.8GHz
B
3
0L
8
3
FR
BFS386L6
For Low Voltage / Low
Current Applications
For Oscillators up to
3.5GHz and Pout > 10dBm
Low Noise Amplifiers
TR1 NF = 1.0dB at 1.8GHz
TR2 NF = 1.1dB at 1.8GHz
Footprint 1.2 x 0.8 x 0.4mm only!
© 2007 Infineon Technologies AG. All rights reserved.
Page 98
23GHz fT Single & Twin RF Transistors in TSLP
VCO and RF Modules
> RF Discretes > RF Transistors
SINGLE and TWIN Type 23GHz Low Phase Noise RF-Transistors in Ideal for Oscillators and VCOs Modules
High gain (~17dB@1.8GHz), low noise (~1.1dB @1.8GHz)
6-Pin Thin Small Leadless Package TSLP-6
Transistor
SINGLE
*BFR460L3
Package
fT VCE0 ICmax Gms
NF
[GHz]
[V]
[mA]
[dB]
[dB]
23
4,5
35
17 at 1.8GHz, 2V,20mA 1,1 at 1.8GHz, 2V,5mA
TSLP-3-1
TWIN
BFS460L6 T1 (*BFR460) TSLP-6-1 (1208)
T2 (*BFR460)
23
23
4,5
4,5
35
35
17 at 1.8GHz, 2V,20mA 1,1 at 1.8GHz, 2V,5mA
17 at 1.8GHz, 2V,20mA 1,1 at 1.8GHz, 2V,5mA
BFS466L6 T1 (*BFR460) TSLP-6-1 (1208)
T2 (BFR360)
23
14
4,5
6
35
35
17 at 1.8GHz, 2V,20mA 1,1 at 1.8GHz, 2V,5mA
15,5 at 1.8GHz, 3V,20mA
1 at 1.8GHz, 3V,20mA
BFS469L6 T1 (*BFR460) TSLP-6-1 (1208)
T2 (BFR949)
23
9
4,5
10
35
35
17 at 1.8GHz, 2V,20mA 1,1 at 1.8GHz, 2V,5mA
14 at 1.8GHz, 8V,10mA 1,5 at 1.8GHz, 8V,3mA
*ESD Performance Typ. 1500V HBM
in M
P
TSLP-3-1 (1006)
© 2007 Infineon Technologies AG. All rights reserved.
TSLP-6-1 (1208 B5)
Page 99
BFP460, BFP540ESD
„EHRT“ ESD-Hardened RF Transistor
> RF Discretes > RF Transistors
NE
W
Excellent general-purpose RF transistor from VHF to 2.5 GHz
Survive 1500V, *1000V Electro-Static Discharge Pulses (Human Body Model) between any pair of terminals
Unmatched combination of ESD-Robustness and RF performance
Industry-standard SOT343 package
© 2007 Infineon Technologies AG. All rights reserved.
Page 100
RF Remote Systems (ISM Based)
ESD Hardened RF-Transistors BFP460, BFP540ESD
> RF Discretes > RF Transistors
RF IC
BFP460
SAW
BFP460,BFP540ESD
1.5kV
RF Remote
On/Off Power Sockets
RF Remote
Garage Door Opener
RF Security / Alarm
Product features & USP:
Unmatched combination of RF Performance
with integrated ESD Protection up to 1.5kV
(HBM)
LNA Boost significantly the sensitivity of RKE ICs
Easy Set-Up – No SMD Coils Required
Low Current Operation – Extend Battery Life
Application Kit/Note No.084 available
Low current, only 3mA
Target Application:
Industrial Security an ISM based RF
Systems (315/433/868MHz) e.g.
Market Driver:
Convenience and reliability
Customer expectations:
ESD protection, RF Performance, Low Cost,
high Quality
IFX product strategy
Extended Antenna Range in package with
IFX RKE ICs (TDA52xx)
1kV
© 2007 Infineon Technologies AG. All rights reserved.
Page 101
Table of Contents
RF Discretes
Introduction
RF Transistors
RF MMICs
RF Diodes
RF PIN Diodes
RF Varactor Diodes
RF Mosfet
© 2007 Infineon Technologies AG. All rights reserved.
Page 102
Si MMICs and RF Transistors
Difference in Applications
> RF Discretes > RF MMICs
MMIC
Application Specific
Often: bias point fixed
Narrow Band f = 1.8 ... 6 GHz
Easiest Circuit & Board Design
Low Parts Count
Universal Application
Broadband f = DC ... 10 GHz
Best Gain & NF
Higher Parts Count
© 2007 Infineon Technologies AG. All rights reserved.
Page 103
Si MMICs – Why ?
Integrated Functions in one Package
> RF Discretes > RF MMICs
Multiple-Stage LNA in one
Vcc
VCTRL
Input
Matching
Active
Biasing
Circuit
LNA
Output
Matching
Multiple-Gain-Stage LNA in one
high gain
through
mid gain
low gain
Basic LNA circuit
off
© 2007 Infineon Technologies AG. All rights reserved.
Multiple-Band LNAs in one
Band 1
Band n
…
…
Band 2
…
The function blocks include:
active biasing circuit with bandgap
input-/output matching
multiple stage/band/gain stage LNA
ESD protection circuit
Bipolar Logic
balun for mode conversion
Linearity improvement circuit
booster circuit
Æ Customer Benefit: shorter R&D time & cost down
Page 104
BGA615L7
GPS (1.575GHz) and L-Band SiGe LNA
> RF Discretes > RF MMICs
Features
High Gain 18 dB
Low Noise Figure 0.9 dB
Off-mode
1KV ESD Protection
Output 50 ȍ matched
Low Parts Count
TSLP-7-1
Vcc = 2.8V, frequency = 1.575GHz
Symbol
2
IS21I
NF
OP1dB
OIP3
Id
Parameter
Unit
Value
Insertion Power Gain
dB
18
Noise Figure
dB
0.9
dBm
6
Output Compression Point
Output Third Order Intercept Point dBm
17
Total Device Current
6
mA
© 2007 Infineon Technologies AG. All rights reserved.
Page 105
BGA622L7
Universal SiGe LNA
> RF Discretes > RF MMICs
Applications
UMTS / CDMA
GSM / TDMA / EDGE
GPS / ISM
Bluetooth
DVB-T/DVB-H
Now ESD-Proof.
2KV acc. to HBM
Features
1.1dB Noise Figure @1.575 GHz
On-Off Switch
50 matched @ > 2 GHz
TSLP-7-1
Low Parts Count
Vcc = 2.7V, frequency = 1.575GHz
Symbol Parameter
2
IS21I
NF
OP1dB
IP3 out
Id
Insertion Power Gain
Noise Figure
Output Compression Point
Output Third Order Intercept Point
Total Device Current
Unit
Value
dB
dB
dBm
dBm
mA
17.5
1.1
-1
17
5.8
© 2007 Infineon Technologies AG. All rights reserved.
Page 106
BGA622
Universal SiGe LNA
> RF Discretes > RF MMICs
Applications
UMTS / CDMA
GSM / TDMA / EDGE
GPS / ISM
Bluetooth
DVB-T/DVB-H
Now ESD-Proof.
2KV acc. to HBM
Features
1.1 dB Noise Figure @2.1 GHz
On-Off Switch
50 matched @ > 2 GHz
See App Note 069 for GPS!
Low Parts Count
Vcc = 2.7V, frequency = 2.14GHz
Symbol Parameter
2
IS21I
NF
P1dB
IP3 out
Id
Insertion Power Gain
Noise Figure
Output Compression Point
Third Order Intercept Point
Total Device Current
Unit
Value
dB
dB
dBm
dBm
mA
13.3
1.1
0
18
5.8
© 2007 Infineon Technologies AG. All rights reserved.
Page 107
BGA428
GSM and GPS LNA
> RF Discretes > RF MMICs
Features and Benefits
For GSM 900/1800/1900 & GPS
Low NF and high gain
50 matched input & output
Reduced component count
SOT363 package
Vcc =2.7V, frequency = 1.8GHz
Symbol Parameter
Gma
NF
P1dB
IIP3
Id
Unit
Power Gain
dB
Noise Figure
dB
Input Compression Point
dBm
Input Third Order Intercept Point dBm
Total Device Current
mA
Value
20
1.4
-19
-9
8,2
© 2007 Infineon Technologies AG. All rights reserved.
Page 108
BGA700L16, Dual Band WLAN LNA
> RF Discretes > RF MMICs
N.C.
ON_52
LNA_
VCC2
Bare Die Sales Code:T1515
Package Sales Code:BGA700L16
N.C.
RF_IN_52.
2.4 GHz, Vcc=3.2V, T=25°C
GND_RF_24
RF_OUT_52
N.C.
RF_OUT_24
N.C.
15
dB
N.C.
Noise Figure
0.9
dB
GND_RF_52
IP-1dB
-10
dB
RF_IN_24
5.5 GHz, Vcc=3.2V, T=25°C
LNA_
ON_24.
VCC1.
N.C.
Gain
P. Size: 2.3 x 2.3 x 0.39 mm3
Gain
21
dB
Noise Figure
1.3
dB
IP-1dB
-10
dB
© 2007 Infineon Technologies AG. All rights reserved.
Page 109
BGA612, BGA614, BGA616
SiGe Broadband Amplifier / DC ... 5GHz, 50
matched
> RF Discretes > RF MMICs
Applications
Supply Voltage > 3 V
Power Gain
343
T
SO
Driver Amp for
GSM / EDGE / CDMA
SAT LNB IF amplifiers
CATV Amplifiers
ISM and Bluetooth
Cellular Base Stations
Application support see
application note 067 !
DVB-T Amplifier
BGA614
Type
Maximum Ratings
Characteristics
Conditions
Output
Power
for 1 dB
Noise
Figure compression
[dB]
[dBm]
Frequency
[GHz]
Bias
Current
[mA]
Supply
Voltage
[V]
17
2
20
2.3
12
25
2
40
2.5
18
29
2
60
4.1
Device
Volage
[V]
Device
Current
[mA]
3dB
bandwidth
[GHz]
BGA 612
2.8
80
2.8
15.8
2.35
7
BGA 614
3.0
80
2.4
17
2.3
BGA 616
4.5
80
2.7
17.5
2.9
Gain lS21l
[dB]
2
3rd Order
Output
Intercept
point
[dBm]
© 2007 Infineon Technologies AG. All rights reserved.
Page 110
BGA420
Broadband LNA-MMIC in SIEGET®25 Technology
> RF Discretes > RF MMICs
4,VD
Features
3,Out
1,IN
2,Ground
SOT343
High Performance:
Gain=13 dB *
NF=2.2 dB *
Reverse isolation > 28 dB *
OIP3 = +10 dBm *
Input/output matched
* data @ 3 V, 6.4 mA ; 1800 MHz
Benefits
SOT343
Easy to design in
Gain [dB]
25
20
15
10
5
0.1
0.2
0.5
0.8 1.0
3.0
10
Freq [GHz]
© 2007 Infineon Technologies AG. All rights reserved.
Page 111
BGA427
Broadband LNA-MMIC in SIEGET®25 Technology
> RF Discretes > RF MMICs
Features
High Performance
Gain=22 dB *
NF=2.2 dB *
Reverse isolation > 35 dB *
IP3output = +7 dBm *
Input/output matched
* data @ 3 V, 6.4 mA ; 1800 MHz
3,VD
4,Out
1,IN
2,Ground
SOT343
Benefits
SOT343
Easy to design in
Gain [dB]
25
20
15
10
5
0.1
0.2
0.5
0.8 1.0
3.0
10
Freq [GHz]
© 2007 Infineon Technologies AG. All rights reserved.
Page 112
Table of Contents
RF Discretes
Introduction
RF Transistors
RF MMICs
RF Diodes
RF PIN Diodes
RF Varactor Diodes
RF Mosfet
© 2007 Infineon Technologies AG. All rights reserved.
Page 113
RF Diodes Packages and Configurations
> RF Discretes > RF Diodes
SC79
-02V
SCD80
-02W
SOT23
-04
SOT323
-04W
SOT23
-05
SOT323
-05W
SOT23
-06
SOT143
-07
SOT323
-06W
SOT343
-07W
SOD323
-03W
C
A
A
C
C
A
A
C
C
A
C
C
A
C
A
A
C
SOT363
-08S
SOT143
-099
SOT363
-04S
SOT143
-099R
© 2007 Infineon Technologies AG. All rights reserved.
TSLP-2/RH
-02L/RH
TSSLP
-02LS
TSLP-3/RH
-03L/RH
TSLP-4
-07L
TSLP-4
-099L
TSLP-4
-098L
Example
BAR63-03W
Single Diode in
SOD323
BAR63-04W
Double Diode, seriell
configuration in
SOT323
Page 114
Table of Contents
RF Discretes
Introduction
RF Transistors
RF MMICs
RF Diodes
RF PIN Diodes
RF Varactor Diodes
RF Mosfet
© 2007 Infineon Technologies AG. All rights reserved.
Page 115
PIN Diodes Applications & Key Parameters
> RF Discretes > RF PIN Diodes
Band switching
in TV / SAT tuners
PIN Diodes
Antenna switching
in RF Frontends
RF attenuator
trr
rf
CT
Surge Protection
Charge carrier lifetime
Forward resistance
Diode capacitance
Switching time
Low for low insertion loss
Small for high isolation
© 2007 Infineon Technologies AG. All rights reserved.
Page 116
Diode packages for smallest size
> RF Discretes > RF PIN Diodes
20% height reduction
70% footprint reduction
20% height reduction
TSLP-4-4
TSLP-2-1
TSLP
TSLP-2/3/4
Package Height
0.50 mm max.
1.0 x 0.6 x 0.4 mm /
1.2 x 0.8 x 0.4 mm
TSLP-RH
TSLP-2/3/4-RH
Reduced Height
TSSLP
0.40 mm max.
TSSLP-2
1.0 x 0.6 x 0.39 mm /
Package Height
1.2 x 0.8 x 0.39 mm
0.32 mm max.
0.6 x 0.3 x 0.31 mm
2003
2004
© 2007 Infineon Technologies AG. All rights reserved.
2005
Page 117
PIN Diodes for Antenna Switches @ 900MHz
> RF Discretes > RF PIN Diodes
Insertion loss
Series configuration, ZL= 50
(@ 900 MHz )
IF= 10 mA, VR= 0 V
BAR 50-02V/L
Ins.loss 0.27 dB @ 10 mA
Isolation 24.5 dB @ 0V
0.20 dB
BAR 64-02V/LRH
Ins. loss 0.16 dB @ 10 mA
Isolation 22 dB @ 0V
0.15 dB
BAR 89-02LRH
0.10 dB
BAR 63-02V/L
Ins.loss 0.10 dB@10mA
Isolation 17.9 dB@ 0V
Ins.loss 0.08 dB@10mA
Isolation 19 dB@0V
BAR 90-02LRH/LS
0.05 dB
BAR 65-02V/L
BAR 88-02V/LRH
Ins. loss 0.05 dB@ 10mA
Isolation 12 dB@ 0V
Ins.loss 0.06 dB@10mA
Isolation 15.5 dB@0V
12 dB
14 dB
16 dB
Ins.loss 0.08 dB@10mA
Isolation 19 dB@0V
BAR90: improved
insertion loss
towards lower
current
18 dB
20 dB
22 dB
Isolation ( @ 900 MHz )
© 2007 Infineon Technologies AG. All rights reserved.
Page 118
PIN Diodes for Antenna Switches @1800MHz
> RF Discretes > RF PIN Diodes
Insertion loss
Series configuration, ZL= 50Ohm
(@ 1800 MHz )
IF= 5 mA, VR= 0V
BAR50-02V/L
Ins.loss 0.4 dB @ 5 mA
Isolation 20 dB @ 0V
BAR 64-02V/LRH
0,20 dB
Ins. loss 0.23 dB @ 5 mA
Isolation 17 dB @ 0V
0,15 dB
BAR 63-02V/L
Ins.loss 0.11 dB@5mA
Isolation 12 dB@ 0V
BAR 89-02LRH
Ins.loss 0.10 dB@5mA
Isolation 14 dB@0V
0,10 dB
BAR 90-02LRH/LS
0,05 dB
BAR 88-02V/LRH
BAR 65-02V/L
Ins. loss 0.06 dB@ 5mA
Isolation 7 dB@ 0V
8dB
10dB
Ins.loss 0.10 dB@5mA
Isolation 13,5 dB@0V
BAR90: improved
insertion loss
towards lower
current
Ins.loss 0.07 dB@5mA
Isolation 11 dB@0V
12dB
14dB
16dB
20dB
Isolation ( @ 1800 MHz )
© 2007 Infineon Technologies AG. All rights reserved.
Page 119
Dual PIN Diodes for Antenna Switches
in TSLP-4 @ 900MHz
> RF Discretes > RF PIN Diodes
Insertion loss
Series configuration, ZL=50Ohm
(@ 900 MHz )
IF= 10mA, VR= 0V
0,10 dB
BAR 90-07LRH/
-098LRH/099LRH
0,075 dB
Ins.loss 0.07 dB@1 0mA
Isolation 19 dB@0V
0,05 dB
BAR 65-07 L
Ins. loss 0.05 dB@ 10mA
Isolation 12 dB@ 0V
BAR 88-07LRH/
099LRH
Ins.loss 0.05 dB@10mA
Isolation 15,5 dB@0V
0,025 dB
12 dB
14 dB
16 dB
18 dB
20 dB
22 dB
Isolation ( @ 900 MHz )
© 2007 Infineon Technologies AG. All rights reserved.
Page 120
Diodes in TSLP-4 Package
> RF Discretes > RF PIN Diodes
Dual Diodes in parallel and anti-parallel configuration
Advantage for customer:
40% footprint reduction compared to 2 single diodes
PIN Diodes
BAR88-07LRH
BAR90-07LRH
Schottky Diodes
BAT15-07LRH
BAT62-07L4
-07L
PIN Diodes
BAR88-098LRH
BAR88-099LRH
BAR90-098LRH
BAR90-099LRH
-099L
Schottky Diodes
BAT15-098LRH
BAT15-099LRH
-098L
TSLP-4/TSLP-4-RH
1,2x0,8x0,5/0,4mm
© 2007 Infineon Technologies AG. All rights reserved.
Page 121
PIN Diodes Harmonic Distortion Values
> RF Discretes > RF PIN Diodes
Type
2nd / 3rd Harmonics (dBc), typical values
35 dBm, 900 MHz, 50 Ohm, single diode in series configuration
IF= 1 mA
IF= 3 mA
IF= 6 mA
IF= 10 mA
BA 892-...
60 / 60
-
80 / >95
80 / >95
BAR 50-...
na *)
-
70 / 75
75 / 90
BAR 63-...
na *)
-
70 / 75
75 / 85
BAR 64-...
na *)
-
75 / 90
80 / >95
BAR 65-...
40 / 40
-
75 / 90
80 / >95
BAR 67-...
30 / 30
-
75 / 90
80 / >95
BAR 88-...
70 / 75
80 / 85
80 / >95
85 / >95
BAR 89-...
40 / 40
65 / 70
80 / 90
85 / >95
BAR 90-...
65 / 65
75 / 85
85 / >95
85 / >95
* Not applicable, restricted by max. power dissipation of diode
Noise floor of used test setup: 95 dBc
© 2007 Infineon Technologies AG. All rights reserved.
Page 122
Harmonic Distortion BAR88 / 89 / 90 series
> RF Discretes > RF PIN Diodes
Switching PIN diode BAR88 / BAR89 / BAR90 series
2nd Harmonic distortion performance
Test conditions: Pin= 35 dBm (ON mode) / 0 dBm (OFF mode), fo= 900 MHz, Z= 50 Ohm
-20
OFF mode
ON mode
2nd Harmonic distortion (dBc)
-30
-40
-50
BAR88-02L
BAR89-02L
BAR90-02L
-60
-70
-80
-90
VR= 0 V
IF= 1 mA
IF= 2 mA
IF= 3 mA
IF= 4 mA
IF= 5 mA
IF= 6 mA
IF=8mA
IF=10mA
Bias conditions
BAR90 with balanced harmonic performance in ‚On‘ and ‚Off‘ modes!
© 2007 Infineon Technologies AG. All rights reserved.
Page 123
PIN Diodes Line Up for FM and TV Tuners
> RF Discretes > RF PIN Diodes
Key Features
Very low capacitance and forward resistance values to guarantee:
Low harmonic for band-switching and antenna-switching applications
Low distortion factor for RF attenuation applications
Long-term stability of electrical characteristics
Type
package
Ct@1V
rf@10mA
Trr
Appl.
0.92 pF
0.36 Ohm
120 ns
Band
switching
0.35 pF
4.5 Ohm
1.6 us
RF
attenuation
BA592
SOD323
BA892
SCD80
BA892-02V
SC79
BA892-02L
TSLP2
BA595
SOD323
BA885
SOT23
BA895
SCD80
BAR14-1, BAR15-1, BAR16-1 (Dual)
SOT23
0.50 pF
7.0 Ohm
1.0 us
RF attenuation
BAR50-02V
SC79
0.24 pF
3.0 Ohm
1.1 us
RF attenuation
BAR61
SOT143
0.25 pF
7.0 Ohm
1.0 us
RF attenuation
(Triple)
© 2007 Infineon Technologies AG. All rights reserved.
Page 124
PIN Diodes Line up
> RF Discretes > RF PIN Diodes
Type
BA592
BA892
BA892-02V
BA892-02L
BA595
BA885
BA895
BAR14-1,15-1,16-1 (D)
BAR50-02V
BAR50-02L
BAR63-03W
BAR63-02W
BAR63-02V
BAR63-02L
BAR63-04/05/06 (D)
BAR63-04W/05W/06W (D)
BAR64-03W
BAR64-02V
BAR64-02LRH
BAR64-04/05/06/07 (D)
BAR64-04W/05W/06W (D)
BAR65-03W
BAR65-02L
BAR65-02V
BAR66
BAR67-02V
BAR61
BAR88-02V
BAR88-02LRH,-07LRH,-098LRH,099LRH
BAR89-02LRH
BAR90-02LS
BAR90-02LRH,-07LRH,-099LRH
package
Ct @ 1V
rF @ 10mA
trr )
Application
SOD323
SCD80
SC79
TSLP2
SOD323
SOT23
SCD80
SOT23
SC79
TSLP2
SOD323
SCD80
SC79
TSLP2
SOT23
SOT323
SOD323
SC79
TSLP2-RH
SOT323
SOT323
SOD323
TSLP2
SC79
SOT23
SC79
SOT143
SC79
TSLP2-RH, TSLP4-RH
TSLP2-RH
TSSLP2
TSLP2-RH, TSLP4-RH
0.92 pF
0.92 pF
0.92 pF
0.92 pF
0.35pF
0.35pF
0.35pF
0.50 pF
0.24 pF
0.24 pF
0.23 pF
0.23 pF
0.23 pF
0.23 pF
0.23 pF
0.23 pF
0.45 pF
0.45 pF
0.45 pF
0.45 pF
0.45 pF
0.45 pF
0.45 pF
0.45 pF
0.45 pF
0.40 pF
0.50 pF
0.3 pF
0.3 pF
0.25 pF
0.25 pF
0.25 pF
0.36 Ohm
0.36 Ohm
0.36 Ohm
0.36 Ohm
4.5 Ohm
4.5 Ohm
4.5 Ohm
7.0 Ohm
3.0 Ohm
3.0 Ohm
1.0 Ohm
1.0 Ohm
1.0 Ohm
1.0 Ohm
1.0 Ohm
1.0 Ohm
2.1 Ohm
2.1 Ohm
2.1 Ohm
2.1 Ohm
2.1 Ohm
0.6 Ohm
0.6 Ohm
0.6 Ohm
1.0 Ohm
1.0 Ohm
7.0 Ohm
0.6 Ohm
0.6 Ohm
0.8 Ohm
0.8 Ohm
0.8 Ohm
120 ns
120 ns
120 ns
120 ns
1.6 µs
1.6 µs
1.6µs
1.0 µs
1.1 µs
1.1 µs
75 ns
75 ns
75 ns
75 ns
75 ns
75 ns
1.55 µs
1.55 µs
1.55 µs
1.55 µs
1.55 µs
80 ns
80 ns
80 ns
700 ns
700 ns
1.0 µs
0.5 µs
0.5 µs
0.8 µs
0.75µs
0.75µs
Bd-Sw
Bd-Sw
Bd-Sw
Bd-Sw
RF-att
RF-att
RF-att
RF-att
Ant.-sw
Ant.-sw
Ant.-sw
Ant.-sw
Ant.-sw
Ant.-sw
Ant.-sw
Ant.-sw
Ant.-sw
Ant.-sw
Ant.-sw
Ant.-sw
Ant.-sw
Ant.-sw
Ant.-sw
Ant.-sw
surge
surge
RF-att
Ant.-sw
Ant.-sw
Ant.-sw
Ant.-sw
Ant.-sw
© 2007 Infineon Technologies AG. All rights reserved.
Page 125
Table of Contents
RF Discretes
Introduction
RF Transistors
RF MMICs
RF Diodes
RF PIN Diodes
RF Varactor Diodes
RF Mosfet
© 2007 Infineon Technologies AG. All rights reserved.
Page 126
Varactor Diodes Applications & Key Parameters
> RF Discretes > RF Varactor Diodes
Tuned Filter
Varactor Diodes
UHF / VHF Tuner
SAT Tuner
VCO Application
CVmin/CVmax
rs
FM Tuner
Capacitance ratio Indicates tuning range
Series resistance Influence on phase noise
Indicates Q factor
© 2007 Infineon Technologies AG. All rights reserved.
Page 127
Varactor Diodes Product Portfolio
> RF Discretes > RF Varactor Diodes
5 GHz
VCO and Low Voltage Tuner
WLAN
300 MHz
1 GHz
3 GHz
Tuner
BBY5x-series
Bluetooth
Cellular
Satellite
BB831, BB833, BB837,
BB857
BBY6x- series
BB535, BB545, BB555/02V, BB565/-02V
GSM
BB639, BB639C, BB659, BB659C/02V, BB644, BB664/-02V, BB689/02V, BB640
UHF
Cordless Phones
VHF
BB804, BB814, BB914, BB844
FM
1.8 V
4V
10 V
© 2007 Infineon Technologies AG. All rights reserved.
28 V
Page 128
Varactor Diodes Line Up for VCOs
> RF Discretes > RF Varactor Diodes
Type
Package
C@1V
Cap-ratio
rs ( Ohm )
BBY51-03W, 02W, 02L
SOD323, SCD80, TSLP2
5.4pF
1.75 (1V/3V)
0.37
BBY51
SOT23
5.4pF
1.75 (1V/3V)
0.37
BBY52-02W, 02L
SCD80, TSLP2
1.9pF
1.6 (1V/4V)
0.9
BBY53-03W,02W, 02V
SOD323, SCD80, SC79
5.3pF
2.2 (1V/3V)
0.47
BBY53, -05W
SOT23, SOT323
5.3pF
2.2 (1V/3V)
0.47
BBY53-02L, 03LRH
TSLP2, TSLP3-RH
5.3pF
2.2 (1V/3V)
0.47
BBY55-02W,02V
SCD80,SC79
18.6pF
2.5 (2V/10V)
0.15
BBY55-03W
SOD323
18.6pF
2.5 (2V/10V)
0.15
BBY56-02W
SCD80
40pF
2.6 (1V/3V)
0.25
BBY56-03W
SOD323
40pF
2.6 (1V/3V)
0.25
BBY57-02W,02V
SCD80,SC79
17.5pF
2.45 (1V/3V)
0.3
BBY57-02L
TSLP2
17.5pF
2.45 (1V/3V)
0.35
BBY57-05W
SOT323
17.5pF
2.45 (1V/3V)
0.3
BBY58-03W, 02W,02V
SOD323, SCD80, SC79
18.3pF
3.05 (1V/4V)
0.25
BBY58-02L
TSLP2
18.3pF
3.05 (1V/4V)
0.3
BBY58-05W, 06W
SOT323
18.3pF
3.05 (1V/4V)
0.25
BBY59-02V
SC79
28pF
4 (1V/4V)
0.45
BBY65-02V
SC79
20pF
4.55 (1V/3V)
0.6
BBY66-02V
SC79
70pF
5.5 (1V/4,5V)
0.25
BBY66-05, 05W
SOT23, SOT323
70pF
5.5 (1V/4,5V)
0.25
© 2007 Infineon Technologies AG. All rights reserved.
Double
Double
Double
Double
Double
Page 129
Varactor Diodes Product Overview
for FM/TV/SAT Tuner
> RF Discretes > RF Varactor Diodes
Type
BB804 (Dual)
BB814 (Dual)
BB844
BB914 (Dual)
Type
BB639
BB659
BB639C
BB659C, BB659C-02V
BB644
BB664, BB664-02V
BB669
BB689, BB689-02V
BB640
BB535
BB555, BB555-02V
BB545
BB565, BB565-02V
BB831
BB833
BB837
BB857
package
SOT23
SOT23
SOT23
SOT23
package
SOD323
SCD80
SOD323
SCD80, SC79
SOD323
SCD80, SC79
SOD323
SCD80, SC79
SOD323
SOD323
SCD80, SC79
SOD323
SCD80, SC79
SOD323
SOD323
SOD323
SCD80
C@2V
C8/C2
rs
Appl.
45pF
46pF
45pF
45 pF
1.7
2.15
3.5
2.35
0.2 Ohm
0.2 Ohm
0.3 Ohm
0.28 Ohm
FM
FM
FM
FM
C@1V
C28/C1
rs
Appl.
38pF
38pF
39pF
39pF
42pF
42pF
57pF
57pF
69pF
19pF
19pF
20pF
20pF
8.8pF
9.3pF
6.6pF
6.6pF
14.7
14.7
15.3
15.3
16.4
16.4
20.9
20.9
22.9
8.9
8.9
10.0
10.0
8.6
12.4
12.0
12.0
0.65 Ohm
0.65 Ohm
0.6 Ohm
0.6 Ohm
0.6 Ohm
0.6 Ohm
0.85 Ohm
0.89 Ohm
1.15 Ohm
0.6 Ohm
0.6 Ohm
0.6 Ohm
0.6 Ohm
1.3 Ohm
1.8 Ohm
1.8 Ohm
1.8 Ohm
VHF
VHF
VHF
VHF
VHF
VHF
VHF
VHF
VHF
UHF
UHF
UHF
UHF
SAT
SAT
SAT
SAT
© 2007 Infineon Technologies AG. All rights reserved.
Page 130
Low voltage Varactor Diodes
for T-DMB and DVB-H Tuners
> RF Discretes > RF Varactor Diodes
Capacitance
value @ 1V
70 pF
BBY56-xx
50 pF
C1V / C3V=2.5
rs @ 1 V = 0.25Ohm
30 pF
BBY58-xx
BBY65-02V
C1V / C3V=2.15
rs @ 1 V = 0.25Ohn
C1V / C3V=4.55
rs @ 1 V = 0.6Ohm
BBY55-xx
C2V / C10V=2.5
rs @ 5 V = 0.15Ohm
10 pF
BBY53-xx
C1V / C3V=2,2
rs @ 1 V = 0.47Ohm
1.0
2.0
3.0
4.0
5.0
Capacitance ratio
© 2007 Infineon Technologies AG. All rights reserved.
Page 131
Table of Contents
RF Discretes
Introduction
RF Transistors
RF MMICs
RF Diodes
RF PIN Diodes
RF Varactor Diodes
RF Mosfet
© 2007 Infineon Technologies AG. All rights reserved.
Page 132
RF MOSFET: Single and Dual
Gain controlled prestage amplifier for analog & digital TV/ VCR/
DVD/ STB Tuner
> RF Discretes > RF Mosfet
BF2030x
BF2040x
BF5030W
UHF
to SWF
~
~
~
4 x BB565
~
~
VHF H
~
~
~
~
~
~
~
~
MOPLL IC
4 x BB659C
1
N
COMP
~
~
4 x BB689
VHF L
BG3130/R
BG3123/R
BG5130R
BG3430R*
4 Ports
Port/ADC
PORTS
REF
DIV
I 2C
~
~
~
7
I2C Bus
* BG3430R: for two band tuners
© 2007 Infineon Technologies AG. All rights reserved.
Page 133
DualMOS : Two MOSFETs in One package
> RF Discretes > RF Mosfet
Applications
Analog and digital tuner modules
More than 50% of footprint saving compared to 2 single MOSFETs
Less pick and place effort
Easier Logistics
Price advantage than 2 x single MOSFET
s
W ologie
0
3
20 echn
BFineon T
Inf
B
W ologies
0
3
20 chn
BFineon Te
30R logies
1
3
G
hno
T
eon
Infin
ec
Inf
SOT343 Outline:
(L x W x H) 2*1.25*0.9 mm3
SOT363 Outline:
(L x W x H)
2*1.25*0.9 mm3
© 2007 Infineon Technologies AG. All rights reserved.
Page 134
DualMOS Product Portfolio
> RF Discretes > RF Mosfet
Gfs
25 mS
PNP Switched
Semi Biased
PNP Switched
Semi / Full Biased
NPN Switched
Full Biased
BG3123 / R
GpsA/G psB = 25/24 dB
FA / FB = 1.8/1.8 dB
Cg1ssA/CdssA= 1.9/1.3 pF
Cg1ssB/CdssB= 1.5/1.1 pF
30 mS
BG3130 / R
Gps = 24 dB
F = 1.3 dB
Cg1ss/Cdss=1.9/1.1 pF
40 mS
BG3430R
BG3230 / R
Gps =25.5 dB
F = 1.3 dB
Cg1ss/Cdss = 1.9/1.1 pF
Gps= 25 dB
F = 1.7 dB
Cg1ss/Cdss = 1.9/1.1 pF
BG5130R
Gps = 24 dB
F= 1.3 dB
Cg1ss/Cdss=2.7/1.6 pF
Package for all types: SOT363
© 2007 Infineon Technologies AG. All rights reserved.
Page 135
BG3430R
New
First intelligent-switching dualMOS
> RF Discretes > RF Mosfet
G 1B
Target applications:
- 2 or 2.5 band tuners e.g. for DVB-T
G2
DB
A m p. B
G2
S
Supporting Tools:
- Datasheet and Simulation Data
Int.
sw itch
A m p. A
G2
G 1A
S
S
DA
Rg1
VGG
Key Features
FET A with partly integrated biasing resistor network
FET B with fully integrated biasing resistor network
Only one switching pin (G1A) to control two MOSFETs
simutaneously, at anytime there is always one FET switched
on
VGG = 5V, FET A ON, FET B OFF
VGG = 0V, FET A 2)), FET B 21
in SOT363 package
Performance Data
GfsA = GfsB = 33mS
Cg1ss = 1.8pF
Cdss=1.3pF
NF @ 3V, 10mA, 800MHz = 1.2dB
NF @ 3V, 10mA, 45MHz = 0.7dB
System ESD Class 2 (2kV – 4kV)
© 2007 Infineon Technologies AG. All rights reserved.
Page 136
BG3430R – RF DualMOS with Intelligent Switching
Layout advantage
> RF Discretes > RF Mosfet
Application: 2 or 2.5 band tuners
FET A semi-integrated biasing network, Gfs=24mS
FET B fully-integrated biasing network, Gfs=30mS
Only ONE switching line to switch on/off both MOS (PNP Port)
Switching @ Pin 1, FET A Gate 1
Switching matrix
VGG
5V
0V
FET A
On
Off
FET B
Off
On
Tuner layout is very high packed
Switching line from PNP port must be lead from tuner IC to MOSFET
If only one line has to be designed
Æ Saves PCB area and 1 control port tuner
Æ Saves 1 resistor and 1 capacitor
Æ Lower risk of crosstalk, feedback
Æ Easier to design RF ground for MOSFET
© 2007 Infineon Technologies AG. All rights reserved.
Page 137
SingleMOS Product Portfolio
> RF Discretes > RF Mosfet
VDS
12 V
External Biasing
Semi Biased
Full Biased
BF999 Triode
Gps = 25 dB
F =1.0 dB
Cgss/Cdss = 2.5/0.9 pF
9V
BF998 / R
BF1009S / SR
Gps = 20 dB
F = 1.0 dB
Cg1ss/Cdss= 2.1/1.2 pF
Gps= 22 dB
F = 1.4 dB
Cg1ss/Cdss = 2.1/0.9 pF
BF2040 / R / W
Gps= 23 dB
F = 1.6 dB
Cg1ss/Cdss = 2.7/1.6 pF
5V
BF2030 / R / W
Gps = 23 dB
F = 1.6 dB
Cg1ss/Cdss= 2.1/1.3 pF
3V
BF1005S / SR
Gps: 20 dB
F: 1.4 dB
Cg1ss/Cdss = 2.1/1.3 pF
BF5030W
Gps= 24 dB
F = 1.3 dB
Cg1ss/Cdss = 2.7/1.6 pF
Package: SOT23 / SOT143 / SOT143 Reverse / SOT343
© 2007 Infineon Technologies AG. All rights reserved.
Page 138
BF5030W / BG5130R
Ultra Low Noise, Low Power MOSFETs
> RF Discretes > RF Mosfet
Target applications:
5V or 3V tuners requiring superior NF performance
Available types:
Single semi-biased MOSFET in SOT343 BF5030W
Dual semi-biased MOSFET in SOT363 BG5130R
Evaluation board of BF5030W available
- For 50MHz/800MHz
- Application Notes on Internet site
Key features:
Performance :
Ultra low NF under 5V or 3V supply voltages
NF more independent from mismatch of tuner module
Power saving of 40% under 3V supply voltage
Verified with System ESD Class 2 (2kV – 4kV)
System solution with Infineon new tuner IC
TUA6045/TUA6041/TUA6039
Gfs = 41mS
Cg1ss = 2.7pF
Cdss=1.6pF
NF @ 3V, 10mA, 800MHz = 1.2dB
NF @ 3V, 10mA, 45MHz = 0.7dB
Xmod @ AGC 0 = 94dB
Xmod @ AGC 10dB = 92 dB
Xmod @ AGC 40 dB = 98 dB
© 2007 Infineon Technologies AG. All rights reserved.
Page 139
RF MOSFET Biasing Explanation
> RF Discretes > RF Mosfet
Full Biased
NPN Port
Tuner IC
fully integrated
biasing network
DC 5V / 9V
AGC
External Biasing
RF Out
DC
AGC
MOSFET
RF In
RF Out
MOSFET
RF In
Semi Biased
PNP Port
Tuner IC
DC
AGC
DC
RF Out
integrated biasing
network but
external resistor
at G1
MOSFET
RF In
DC
© 2007 Infineon Technologies AG. All rights reserved.
Page 140
Table of Contents
Applications
RF Discretes
Schottky Diodes
HiPAC, TVS Diodes, Silicon Mircrophone
LED Drivers
AF Discretes
General Information
© 2007 Infineon Technologies AG. All rights reserved.
Page 141
Schottky Diodes
> Schottky Diodes
Signal Detection
Schottky Diodes
Circuit Protection
High Speed Switching
Clamping
Mixer Application
Rectifying
Requirements
High efficiency / low loss
Low Forward voltages VF
Low leakage current
Low power consumption
Low level of signal distortion
Small packages and more elements /package
© 2007 Infineon Technologies AG. All rights reserved.
Page 142
Schottky Diode Portfolio
Diode Capacitance vs. Forward Voltage
> Schottky Diodes
WLAN:
5-6 GHz
WLAN:
2.4 GHz
Mobile phones:
0.8 to 2.1 GHz
Dataline protection (PC, Notebook):
0 to 0.2 GHz
0,5
Forward voltage VF (V) @ 1 mA/10mA/100mA
BAT62 series
BAS125 series
0,4
BAS70 series
BAS3005B-02V
BAT17 series
BAS3010B-03W
BAT240A
BAS52-02V
BAT68 series
BAT54
BAT64 series
0,3
BAS40 series
BAT165
BAS3010A-03W
BAT60B
BAT15 series
0,2
VF @ 1mA
BAT63 series
VF @ 10mA
VF @ 100mA
BAT60A
0,1
0,1
1
capacitance C (pF) @ 0 V
10
© 2007 Infineon Technologies AG. All rights reserved.
100
Page 143
Schottky Diode Portfolio
Max. Current vs. Breakdown Voltage
> Schottky Diodes
1000
RF-Schottky
BAT240A
100
BAS52-02V
V bd [V]
BAS70 series
BAS40 series
BAT62 series
BAT64 series
BAT165
BAS3010
BAS3005
BAS125 series
10
BAT60A/B
BAT68 series
BAT15 series
BAT17 series
BAT63 series
1
10
100
Imax [mA]
1000
© 2007 Infineon Technologies AG. All rights reserved.
10000
Page 144
Medium Power AF-Schottky Family
For DC/DC Converter, Battery Charger, ....
> Schottky Diodes
Smallest package => Ideal for Mobile Phone, PDA, Portable Computer, Digital Still Camera, ...
Max. current IF: 0.2 A to 2.0 A; max. reverse voltage VR: 10 V to 45 V
Low VF-type and low IR-types available
High ESD ruggedness
IF appl.
[A]
VF @
IF appl.
[V]
Vr max
[V]
IR @ 10V
[µA]
C @ -5V
[pF]
Package
BAT165
0.2
0.4
40
0.2
12
SOD323
BAS52-02V
0.2
0.49
45
0.2
7
SC79
BAS3005A-02V
0.5
0,45
30
2,5
10
SC79
BAS3005B-02V
0.5
0.55
30
1.5
6
SC79
BAS3010A-03W
1.0
0.41
30
10
28
SOD323
BAS3010B-03W
1.0
0.48
30
1
33
SOD323
BAT60A
2.0
0.4
10
2000
20
SOD323
BAT60B
2.0
0.55
10
10
25
SOD323
ne
w
Type
Package size:
Color code:
SC79: 1.6 x 0.8 mm; SOD323: 2.5 x 1.25 mm
Low VF-type; Low IR-type
© 2007 Infineon Technologies AG. All rights reserved.
Page 145
Schottky Diodes vs. Silicon Diodes
for Reverse Polarity Protection
> Schottky Diodes
Why use Schottky diodes for Reverse Polarity Protection (RPP) ?
Schottky diodes have lower forward voltage ( VF), typically ~ 0.3 volts, as opposed
to ~ 0.7 volts for Silicon diodes.
This can be a significant advantage in some applications, e.g. for LED lighting arrays,
where goal is to put as many LED’s into one “stack” as possible. Minimizing diode
voltage drop might mean being able to add one more LED to the LED stack.
The lower VF of Schottky diodes also means reduced power dissipation / higher DC
efficiency in the overall circuit.
2. Speed. Schottky diodes generally “switch” faster than Silicon diodes.
© 2007 Infineon Technologies AG. All rights reserved.
Page 146
Schottky Diodes vs. Silicon Diodes
Performance comparision
> Schottky Diodes
Diode forward current vs. forward voltage drop
0,7
0,6
Standard Silicon Diode
Low VF Silicon Diode
Low VF Schottky Diode
0,5
IF (A)
0,4
Calculation of power loss per diode:
Standard Silicon Diode:
Ptot = 0.7 A x 1.6 V = 1.1 W
Low VF Silicon Diode:
Ptot = 0.7 A x 1.0 V = 0.7 W (-36%)
Low VF Schottky Diode:
Ptot = 0.7 A x 0.5 V = 0.35 W (-68%)
0,3
0,2
0,1
0,0
0,0
0,2
0,4
0,6
0,8
1,0
1,2
1,4
1,6
1,8
2,0
VF (V)
© 2007 Infineon Technologies AG. All rights reserved.
Page 147
Reverse Polarity Protection („RPP“)
with BAS30xx families e.g. for LED drivers, battery chargers.
> Schottky Diodes
Plug to DC
power supply
Plug to DC
power supply
+Vs
GND
+Vs
GND
GND/
+Vs
+Vs/
GND
+Vs
GND
DC protected
circuit
Prevents damage to circuit when DC
plug is inserted backwarded.
BUT in this case the circuit will not
function.
Schottky Diode:
Schottky Diode Array:
DC protected
circuit
Protects circuit from reverse polarity
damage.
AND circuit will function properly even if
DC power plug is inserted backwards
BAS3010S-03LRH*, BAS3010A-03W
BAS3020B*
BAS3007A-RPP*
© 2007 Infineon Technologies AG. All rights reserved.
*New Products on request
Page 148
Schottky Diodes for Mixer Applications
> Schottky Diodes
Low capacitance value for high frequency range
Low & medium Schottky Barrier for low LO mixers
Available as single and dual diodes
Latest type BAT24-02LS with ultra-low capacitance for 24GHz Radar
Modules, etc.
for WLAN applications:
In super-mini TSSLP
package
also available in TSLP-RH
BAT15xx
BAT17xx
BAT24-02LS
CT@0V
0.26 pF
0.55 pF
0.22 pF
VF @1mA
230 mV
340 mV
230 mV
IF max
110 mA
130 mA
110 mA
© 2007 Infineon Technologies AG. All rights reserved.
Page 149
Ultra Low Parasitic Inductance & Capacitance
Schottky Diode BAT24-02LS
> Schottky Diodes
RF mixer and detector Schottky diodes with integrated guard ring
AEC Q101 (automative) qualified
Wide operating temperature range: -55 ~ 150°C
Package size: 0.6mm*0.3mm*0.31mm
Target applications: 24GHz radar modules
Electrical Toll Collection, etc.
Competitor types: MACOM MA4E2502L series
BAT24-02LS
Ls
0.2 nH
CT@0V
0.21 pF
VF @1mA
230 mV
IF max
110 mA
Frequency range
DC to 24GHz
© 2007 Infineon Technologies AG. All rights reserved.
Page 150
Schottky Diodes for Signal Detection
(Power Leveling)
> Schottky Diodes
Low capacitance value for high frequency range
Low & medium Schottky Barrier for high sensitivity in detector appl.
Available as single and dual diodes
New: BAT62-02LS
New: BAT63-02V
In super-mini TSSLP
in SC79 package!
CT@0V
VF @1mA
IF max
BAT62xx
BAT63xx
BAT68xx
BAS70xx
0.35 pF
440 mV
20 mA
0.75 pF
318 mV
130 mA
0.75 pF
318 mV
130 mA
1.5 pF
375 mV
70 mA
© 2007 Infineon Technologies AG. All rights reserved.
Page 151
BAT63-series
Zero Bias for Tire Pressure Monitoring Systems (TPMS)
> Schottky Diodes
Forward characteristic comparison
for different barrier types
Product description
Zero bias Schottky Diode for RF signal detection,
especially optimized for high temperature
application
low barrier type: BAT63
ultra low barrier type
extreme low barrier type
Applications: Tire pressure monitoring system
(TPMS), Electronic Toll Collect (ETC), etc
Key advantage: NO degradation of detection
sensitivity at higher temperatures
Detection sensitivity at 25°C
low barrier type: BAT63
ultra low barrier type
extreme low barrier type
Detection sensitivity at 150°C
low barrier type: BAT63
ultra low barrier type
extreme low barrier type
© 2007 Infineon Technologies AG. All rights reserved.
Page 152
BAT62-09S
High Isolation Schottky Diode Pair in SOT363
> Schottky Diodes
BAT62-09S
Application / Features
Large signal detector in PA modules
Improved cross-talk isolation
Competition
Agilent HSMS series
Status: mass production
Other available configurations:
• Single:
in SOT143 / TSLP /
TSSLP / SOD323 / SCD80
• Dual:
© 2007 Infineon Technologies AG. All rights reserved.
in SOT343 / TSLP4
Page 153
Schottky Diodes for Clamping /
Circuit Protection / High Speed Switching
> Schottky Diodes
Schottky Diodes for clipping & clamping applications
Schottky Diodes for circuit protection
Schottky Diodes for high speed switching
Low capacitance value for high frequency range
Available as single and dual diodes
BAS125xx BAS40xx
BAT54xx
BAT64xx
CT@0V
1.0 pF
3.0 pF
7.0 pF
6.0 pF
VF @1mA
385 mV
310 mV
240 mV
320 mV
IF max
100 mA
120 mA
200 mA
250 mA
© 2007 Infineon Technologies AG. All rights reserved.
Page 154
Clipping, Clamping and
Transient Voltage Suppression
Problem: Noisy data-spikes can damage digital circuits!
After Filtering
spikes in datastream
Two Schottky diodes are used for
protecting sensitive circuit elements
against spikes.
(TSLP-2)
Protection Diode:
BAT17xx, BAT62xx, BAT54xx, BAT64xx,
BAT68xx, BAS40xx, BAS70xx, BAS125xx
Available Packages: SC79, SCD80, SOD323, SOT23, SOT323, SOT143, SOT343, TSLP-2
© 2007 Infineon Technologies AG. All rights reserved.
Page 155
Latest AF-Schottky Diodes with Wide Package Portfolio
BAT54-series, BAT64-series
> Schottky Diodes
For clipping & clamping applications
For circuit protection
For high speed switching
Available as single and dual diodes
SOT23
BAT64xx
BAT54xx
CT@0V
4.0 pF
7.0pF
UF @1mA
320 mV
240 mV
IF max
250 mA
200 mA
BAT54*
(single)
BAT54W*
(single)
BAT54-04*
(series)
BAT54-04W*
(series)
BAT54-05*
BAT54-05W*
(com. cathode)
(com. cathode)
BAT54-06*
BAT54-06W*
(com. anode)
(com. anode)
SCD80
SC79
SOT323
BAT64-02W
single)
BAT54-02V
(single)
TSLP2-RH
BAT54-02LRH
(single)
* Configurations available also for BAT64 family
© 2007 Infineon Technologies AG. All rights reserved.
Page 156
Schottky Diodes for Modems
& Battery Powered Applications
> Schottky Diodes
Modem
Protection
Battery Powered
Applications
BAT240A
high VR breakdown
CT
11.5 pF
VR
240 V
Ifmax
400 mA
High breakdown voltage
BAT60A
very low voltage drop VF
CT
20.0 pF
VF@10mA
0.12 mV
Ifmax
3.0 A
Low voltage drop
© 2007 Infineon Technologies AG. All rights reserved.
BAT60B
low voltage drop VF
CT
25.0 pF
VF@10mA 0.24 mV
Ifmax
3.0 A
Page 157
BAT240A for Modems Applications
> Schottky Diodes
Worldwide programmable SW Modem (PCI 2.1 interface)
2 X BAT 240
Schottky Diode
PITA
PSB 4600
AUS-D
PSB 4596
AUS-A
PSB 4595
Tip
Ring
PCI Interface
Optional
Modem with optical DAA
2 X BAT 240
Schottky Diode
DAA 2000
Kit
A/D
Data
Modem
Datapum
p
Codec
D/A
Tip
IL338
DL207
DM207
Ring
IL338
© 2007 Infineon Technologies AG. All rights reserved.
Page 158
Available Schottky Diodes in TS(S)LP
> Schottky Diodes
1.2 x 0.8 x 0.4 mm
BAS40-02L
BAS70-02L
BAT54-02LRH
TSLP2
TSLP2
TSLP2-RH
BAT15-02LRH
BAT15-07LRH(D)
BAT15-098LRH(D)
BAT15-099LRH(D)
BAT24-02LS
BAT62-02LS
BAT62-02L
BAT62-07L4(D)
TSLP2-RH
TSLP4-RH
TSLP4-RH
TSLP4-RH
TSSLP2
TSSLP2
TSLP2
TSLP4-RH
© 2007 Infineon Technologies AG. All rights reserved.
High speed
switching clipping
and clamping
RF mixer
and
detector,
power
leveling
Page 159
Schottky Diode Lineup
RF Mixer / Detection / Power Leveling
> Schottky Diodes
Type
BAT15-02LRH
BAT15-03W
BAT15-04W
BAT15-05W
BAT15-07LRH
BAT15-098LRH
BAT15-099 / LRH
BAT15-099R
BAT17
BAT17-04 / W
BAT17-05 / W
BAT17-06W
BAT17-07
BAT24-02LS
BAT62
BAT62-02L / -02LS /-02W
BAT62-03W
BAT62-07L4 / W
BAT62-09S
BAT63-02V
BAT63-07W
BAT68
BAT68-04 / W
BAT68-06 / W
BAT68-07W
BAT68-08S
VRmax [V] IFmax [mA] CT [pF]
D
D
D
D
D
Q
D
D
D
D
D
D
D
D
D
D
T
4
4
4
4
4
4
4
4
4
4
4
4
4
4
40
40
40
40
40
3
3
8
8
8
8
8
110
110
110
110
110
110
110
110
130
130
130
130
130
110
20
120
20
20
20
100
100
130
130
130
130
130
0,26
0,26
0,26
0,26
0,26
0,26
0,26
0,38
0,55
0,55
0,55
0,55
0,75
0,21
0,35
0,35
0,35
0,35
0,35
0,65
0,65
0,75
0,75
0,75
0,75
0,75
VF [mV]
230
230
230
230
230
230
230
230
340
340
340
340
340
230
580
580
580
580
580
190
190
318
318
318
318
318
© 2007 Infineon Technologies AG. All rights reserved.
Package
TSLP2
SOD323
SOT323
SOT323
TSLP4
TSLP4
SOT143
SOT143
SOT23
SOT23 / SOT323
SOT23 / SOT323
SOT323
SOT143
TSSLP2
SOT143
TSLP2 / TSSLP2 /SCD80
SOD323
TSLP4 / SOT343
SOT363
SC79
SOT343
SOT23
SOT23 / SOT323
SOT23 / SOT323
SOT343
SOT363
Page 160
Schottky Diode Lineup
High speed switching / clipping / clamping
> Schottky Diodes
Type
BAS125-04W
BAS125-05W
BAS125-06W
BAS125-07W
BAS140W
BAS170W
BAS40 / -02L
BAS40-04
BAS40-05 / W
BAS40-06 / W
BAS40-07 / W
BAS70
BAS70-02L / -02W
BAS70-04 / W
BAS70-04S
BAS70-05 / W
BAS70-06 / W
BAS70-07 / W
BAT240A
BAT54 / W
BAT54-02LRH / -02V
BAT54-04 / W
BAT54-05 / W
BAT54-06 / W
BAT64 / -02V / -02W
BAT64-04 / W
BAT64-05 / W
BAT64-06 / W
D
D
D
D
D
D
D
D
D
Q
D
D
D
D
D
D
D
D
D
D
VRmax [V]
IFmax [mA]
CT [pF]
25
25
25
25
40
70
40
40
40
40
40
70
70
70
70
70
70
70
240
30
30
30
30
30
40
40
40
40
100
100
100
100
120
70
120
120
120
120
120
70
70
70
70
70
70
70
400
200
200
200
200
200
250
250
250
250
0,95
0,95
0,95
0,95
3
1,5
3
3
3
3
3
1,6
1,5
1,6 / 1,5
1,6
1,6 / 1,5
1,6 / 1,5
1,5
11,5
< 10
HiPAC
ESD protection acc. IEC61000-4-2
2 kV @ Pin A3, B3, C3
15 kV @ A2, B1, C1, C2
Integrated filter function for EMI reduction
Capacity per Line CTmax: 20 pF
Package: WLP-8
Solder Ball Pitch: 500 µm (BGF105) / 400 µm (BGF106)
SOP – Q3CY2007
© 2007 Infineon Technologies AG. All rights reserved.
Page 171
BGF110
NEW
NEW
SD Card ESD Protection
> HiPAC, TVS Diodes, Silicon Microphone > HiPAC
ESD protection acc. IEC61000-4-2
- 15 kV for SD Card Interface
- 2 kV ESD protection at internal I/O
Integrated filter function for EMI reduction
Capacity per Line CT: 16 pF
Package: WLP-24
Solder Ball Pitch: 400 µm
SOP – Q3CY2007
© 2007 Infineon Technologies AG. All rights reserved.
Page 172
BGF111
NEW
NEW
TV out filter & ESD protection
0.40 mm
0.20 mm
ESD protection acc. IEC61000-4-2
- 15 kV for Ext. I/O
- 2 kV ESD for Int. I/O
Integrated filter function for EMI reduction
Capacity per Line CT: 44 pF
75 Ohm interface (video interface)
Package: WLP-4
Solder Ball Pitch: 400 µm
SOP – Q3CY2007
0.75 mm
> HiPAC, TVS Diodes, Silicon Microphone > HiPAC
© 2007 Infineon Technologies AG. All rights reserved.
Page 173
HiPAC for Wireless Applications:
Application Overview
> HiPAC, TVS Diodes, Silicon Microphone > HiPAC
LNA
Balun
Antenna
Switch
Harmonic
Filter
Use
-
Power
Detection
PA
BPF
Matching
Harmonic-Filter &
Matching Network &
Mode Conversion/
Hybrid coupler
Transceiver & Baseband Chipset
Matching
the benefits of our HiPAC technologies, the function blocks can be realized:
Matching Networks for e.g. TRX to PA, SAW/BAW to TRX, LNA…
Filters (BP, LP, HP, Harmonic Filters)
Balun/Auto-trafo for mode conversion
Power detection through coupler
Hybid coupler
© 2007 Infineon Technologies AG. All rights reserved.
Page 174
BGH92M/BGH182M
HiPAC for Wireless Applications: H3 – Filter
> HiPAC, TVS Diodes, Silicon Microphone > HiPAC
BGH92M
BGH182M
Features
Passband insertion loss typ. 2.8 dB
H3 suppression typ. 45 dB
H4 common mode suppression typ. 40 dB
Low amplitude ripple
Balanced to single ended operation
- Input 390 Ohm balanced
- Output 50 Ohm single ended
Integrated DC-biasing to in- and output
TSLP 7
Forward Transmission
0
Insertion Loss / dB
-10
-20
-30
-40
-50
-60
0
1
2
3
4
5
6
Frequency / GHz
© 2007 Infineon Technologies AG. All rights reserved.
Page 175
Table of Contents
HiPAC, TVS Diodes, Silicon Mircrophone
HiPAC
TVS Diodes
Silicon Microphone
© 2007 Infineon Technologies AG. All rights reserved.
Page 176
1 or 2-Channel Low Capacitance bi-directional ESD
Diode in Ultra-Small TSLP Package
> HiPAC, TVS Diodes, Silicon Microphone > TVS Diodes
ESD8V0L1B-02LRH & ESD8V0L2B-03L
Target
Target Application
Application
ESD
ESD protection
protectionof
of high-speed
high-speed data
data interfaces
interfaces
like
USB
2.0,
10/100
Ethernet,
Firewire,
like USB 2.0, 10/100 Ethernet, Firewire,
Video,
Video,Serial/Parallel
Serial/Parallel and
and LAN/WAN
LAN/WAN ports;
ports;
For
Forapplications
applicationsfrom
from3.3V
3.3Vup
upto
to14V
14V
m
m
m
m
4
00..4 llyy
e
e
gg t oonn
a
a
kk ghht
c
c
a
PPa hheeiig
Schematic
Schematic and
and PIN
PIN Configuration
Configuration
1
3
2
1
2
TSLP-3-1
3
Parameter
Parameter Overview
Overview
Parameter
Parameter
•• VVRWM
RWM
Condition
Condition
••
••
3V,
3V,25°C
25°C
0V,
1MHz
0V, 1MHz
Value
Value
14V
14V (V+)
(V+)
8V
(V-)
8V (V-)
100nA
100nAmax
max
2pF/4pF/8.5pF
2pF/4pF/8.5pF
(contact)
(contact)
(5/50ns)
(5/50ns)
(8/20µs)
(8/20µs)
>15kV
>15kV
>40A
>40A
>1A
>1A//>2A
>2A
••
••
••
IIRWM
RWM
CCLL
typ.
typ.
IEC61000-4-2
IEC61000-4-2
IEC61000-4-4
IEC61000-4-4
IEC61000-4-5
IEC61000-4-5
2
TSLP-2-7
1
2
1
1.0x0.6x0.4mm
1.0x0.6x0.39mm
Application
Application Example
Example
V RUS
ESD
Sensitiv
e device
D
DGND
GMD
© 2007 Infineon Technologies AG. All rights reserved.
1x
ESP8VOL2B-03L
Page 177
Ultra Low Capacitance, Low Intermodulation, RF
ESD Protection Diodes
> HiPAC, TVS Diodes, Silicon Microphone > TVS Diodes
ESDxPyRF-series
Target
Target Application
Application
Applications
Applications in
in anti-parallel
anti-parallel configuration
configuration
For
low
RF
signal
levels
without
For low RF signal levels withoutsuperimposed
superimposed
DC
voltage:
e.g.
GPS,
XM-Radio,
DC voltage: e.g. GPS, XM-Radio,Sirius,
Sirius,DVB,
DVB,
DMB,
DAB,
Remote
keyless
entry
DMB, DAB, Remote keyless entry
Applications
Applications in
in rail-to-rail
rail-to-rail configuration
configuration
For
high
RF
signal
levels
or
low
For high RF signal levels or lowRF
RFsignal
signallevels
levels
with
superimposed
DC
voltage:
e.g.
HDMI,
with superimposed DC voltage: e.g. HDMI,S-ATA,
S-ATA,
Gbit
Ethernet
Gbit Ethernet
DD
EESS tiioonn
RRFF teecct
oot
r
r
PP
Schematic
Schematic and
and PIN
PIN Configuration
Configuration
TSLP4
SOT363
Size only
2-Channel protection
1.2x0.8x0.4
SOT323
Parameter
Parameter Overview
Overview
Parameter
Parameter
•• VVCL
CL
•• CCLL(ESD0P8RF)
(ESD0P8RF)
•• CCLL(ESD1P0RF)
(ESD1P0RF)
•• IEC61000-4-2
IEC61000-4-2
•• IEC61000-4-4
IEC61000-4-4
•• IEC61000-4-5
IEC61000-4-5
Condition
Condition
3A,
3A,8/20µs
8/20µs
0V,
1MHz
0V, 1MHz
0V,
0V,1MHz
1MHz
(contact)
(contact)
(5/50ns)
(5/50ns)
(8/20µs)
(8/20µs)
Value
Value
~4V
~4V
0.8pF
0.8pF
1.0
1.0pF
pF
>15kV
>15kV
>40A
>40A
>10A
>10A
Application
Application Example
Example
T
N
RF
Circuit
ESD1P0RFW
© 2007 Infineon Technologies AG. All rights reserved.
Page 178
1- to 5-Channel TVS Diode Arrays for General
Purpose Protection
> HiPAC, TVS Diodes, Silicon Microphone > TVS Diodes
ESD5V0S1U-03W / ESD5V0S2U / ESD5V0S4US / ESD5V0S5US
Target
Target Application
Application
Schematic
Schematic and
and PIN
PIN Configuration
Configuration
SS
TTVV
ESD,
ESD, EFT
EFT && lightning
lightning protection;
protection; Low
Low speed
speed
data
interface
(Power
Line,
Microphone,
data interface (Power Line, Microphone,Speaker,
Speaker,
Headset,
Flash
Card)
in
5V
applications
(Cellular
Headset, Flash Card) in 5V applications (Cellular
phone,
phone,PDA,
PDA,Digital
DigitalStill
StillCamera,
Camera,MP3-player,
MP3-player,etc.)
etc.)
Parameter
Parameter Overview
Overview
Parameter
Parameter
•• VVRWM
RWM
•• VVCL
CL
•• IIRWM
RWM
•• PPPK
PK
•• CCLL
•• IEC61000-4-2
IEC61000-4-2
•• IEC61000-4-4
IEC61000-4-4
•• IEC61000-4-5
IEC61000-4-5
Condition
Condition
5A,
5A,8/20µs
8/20µs
5V,
5V,25°C
25°C
8/20µs
8/20µs
0V,
0V,1MHz
1MHz
(contact)
(contact)
(5/50ns)
(5/50ns)
(8/20µs)
(8/20µs)
Value
Value
5V
5V max
max
8.8V
8.8Vmax
max
2µA
2µAtyp.
typ.
up
upto
to330W
330W
TVS Diodes
ESD24VS2B & ESD24VS2U
Target
Target Application
Application
ss
BBuu
NN
CCAA TVVSS
T
Schematic
Schematic and
and PIN
PIN Configuration
Configuration
ESD,
ESD, EFT
EFT && lightning
lightning protection;
protection; Low
Lowand
andHigh
High
Speed
CAN
Automotive
networks
and
or
Speed CAN Automotive networks and or
Industrial
IndustrialControl
ControlNetworks
Networks
IC
ICprotection
protectionin
in24V
24V applications
applications (Notebooks,
(Notebooks,
desktops,
desktops, and
and servers)
servers)
Parameter
Parameter Overview
Overview (preliminary)
(preliminary)
Parameter
Parameter
•• VVRWM
RWM
•• VVCL
CL
•• IIRWM
RWM
•• PPPK
PK
•• CCLL
•• IEC61000-4-2
IEC61000-4-2
•• IEC61000-4-4
IEC61000-4-4
•• IEC61000-4-5
IEC61000-4-5
Condition
Condition
5A,
5A,8/20µs
8/20µs
24V,
24V,25°C
25°C
8/20µs
8/20µs
0V,
0V,1MHz
1MHz
(contact)
(contact)
(5/50ns)
(5/50ns)
(8/20µs)
(8/20µs)
Value
Value
24V
24V
40V
40V
10nA
10nAmax
max
180W
180Wper
perdiode
diode
24pF
typ.
24pF typ.
30kV
30kVcontact!
contact!
40A
40A
5A
5Aper
perdiode
diode
ESD24VS2B
ESD24VS2U
ESD24VS2B
(SOT23)
Application
Application Example
Example
CAN High
CAN
Transceiver
CAN Low
CAN Bus
1x
ESD24VS2B
© 2007 Infineon Technologies AG. All rights reserved.
Page 180
Ultra Low Capacitance Rail-to-Rail TVS Diode Array
> HiPAC, TVS Diodes, Silicon Microphone > TVS Diodes
ESD70VU2RR-07
p
ccaap
w
lloowS
a
trra V S
uullt TTV
Target
Target Application
Application
Schematic
Schematic and
and PIN
PIN Configuration
Configuration
ESD,
ESD, EFT
EFT && lightning
lightning protection
protection of
of ADSL,
ADSL, ISDN,
ISDN,
WAN,
LAN
or
other
telecom
application
(rail-toWAN, LAN or other telecom application (rail-torail).
rail).
4
3
1
2
Parameter
Parameter Overview
Overview (preliminary)
(preliminary)
Parameter
Parameter
•• VVRWM
RWM
•• VVCL
CL
•• IIRWM
RWM
•• PPPK
PK
•• CCLL
•• IEC61000-4-2
IEC61000-4-2
•• IEC61000-4-4
IEC61000-4-4
•• IEC61000-4-5
IEC61000-4-5
Condition
Condition
10A,
10A,8/20µs
8/20µs
70V,
25°C
70V, 25°C
8/20µs
8/20µs
0V,
0V,1MHz
1MHz
(contact)
(contact)
(5/50ns)
(5/50ns)
(8/20µs)
(8/20µs)
Value
Value
70V
70V max
max
4V
max
4V max
5µA
5µAmax.
max.
up
to
up to330W
330W
40A
>24A
>24A
ESD70VU2RR-07 (SOT143)
Application
Application Example
Example
V
+
ESD
sensitive
device
ESD70VU2RR-07
© 2007 Infineon Technologies AG. All rights reserved.
Page 181
TVS Diodes Combine a Very Fast Response Speed
with Lowest Clamping Voltages
> HiPAC, TVS Diodes, Silicon Microphone > TVS Diodes
TVS Diode
Zener Diode
MOV/MLV
Polymer ESD
Very Fast
Very Fast
Fast
(~few ns)
Very fast
Medium to High
Low to Medium
(not specified)
Medium to High
Poor,
degradation
effects
Multi-strikes
Very good
Good
Poor
Poor
Line Capacitance
Low to Medium
(>0.8pF)
Medium (>30pF)
Low to High
Very Low
(0.05 … 3pF)
Clamping Voltage
Low
Medium
Very High
Very High
>300V (Trigger!)
Precision of Clamping
Voltage
Good
Poor
Poor
Good (but high
trigger V)
Wide Range of Breakdown Voltage
Very good
Good
Only >15V
See trigger voltage
Uni-directional
Yes
Yes
No
No
Bi-directional
Yes
No
Yes
Yes
Leakage Current
Low
Middle
High
Low
Response Speed
(Voltage Limit Speed)
Surge Handling Capability
Comment
Critical SMT
© 2007 Infineon Technologies AG. All rights reserved.
Page 182
Table of Contents
HiPAC, TVS Diodes, Silicon Mircrophone
HiPAC
TVS Diodes
Silicon Microphone
© 2007 Infineon Technologies AG. All rights reserved.
Page 183
Application example: Hands Free
> HiPAC, TVS Diodes, Silicon Microphone > Silicon Microphone
Hands-Free in the car: Low body noise
coupling (vibration of the car)
Directionality with arrays of microphones
Integration in noise reduction and echo
cancellation systems
© 2007 Infineon Technologies AG. All rights reserved.
Page 184
SMM310
Analog Microphone for Mobile Applications
> HiPAC, TVS Diodes, Silicon Microphone > Silicon Microphone
Frequency response
Silicon MEMS Microphone
Surface mount assembly
Green package (260°C)
Integrated EMI filtering
2kV ESD protection (HBM)
Small size: 4.72x3.76x1.25mm3
Part number: MM 310 E6433
Sales code: SP000267598
Characteristics
Parameter
Typical
Value
Unit
Sensitivity
-42
dBV/Pa
Input-Referred
Noise
28.5
dB
Signal to Noise
59
dB(A)
110
dB
1.5 – 3.3
V
70
µA
Maximum Sound
Pressure Level
Supply Voltage
Current
Consumption
Output
Impedance
< 100
Output Drive
Capability
10
pF
k
65
dB
PSRR
Conditions
Relative Sensitivity [dBV/Pa]
Description
Black curve: target frequency response (ref
1kHz)
10
5
0
-5
-10
Red curves: maximum deviation from
target
-15
100
1000
Frequency [Hz]
1 kHz, 94 dB SPL
1 Pa, psophometrically
weighted
10000
Focus application
1 Pa, A-weighted
Total Harmonic Distortion
LED Drivers
1
Inhomogenous light emission in LED branches
in comparison to each other
Æ due to statistical variations of LED properties like forward
voltage of up to + 20% the current variation in LED branches
can be very high
2
Variation of brightness of all LED branches
Æ due to fluctuations of the voltage supply
3
Degradation of light emission of LEDs
Æ due to thermal overload or even thermal runaway connected
with the decline of the forward voltage of LEDs vs temperature
4
Increased cost of customers for LEDs
Æ due to required binning for same forward voltage VF besides
brightness and colour temperature index (CRI)
© 2007 Infineon Technologies AG. All rights reserved.
Page 187
Countermeasures against problems in operating LEDs
1st option: pure resistor biasing
> LED Drivers
Typical setup without LED driver
VS
(=5V...
18V)
RLin
resistor to define bias current
+ inhomogenous light emission can be solved,
- but at the cost of high voltage drop
- brightness variations due to fluctuations of Vs remains
- danger of degradation due to thermal overload of LEDs remains
Æ
Æ
Æ
Conclusion:
high voltage drop can result in less number of LEDs in respective branches
thermal overload can lead to degradation of LEDs neutralizing
the selling argument of long life expectancy of LEDs
cheapest countermeasure, but doesn’t solve most critical problems of
operating LEDs
© 2007 Infineon Technologies AG. All rights reserved.
Page 188
Countermeasures against problems in operating LEDs
2nd option: voltage regulator in addition to resistor biasing
> LED Drivers
additional voltage regulator
VS
(=5V...
18V)
RLin
resistor to define bias current
+ inhomogenous light emission can be solved, but
- at the cost of high voltage drop
+ brightness variations due to fluctuations of Vs , but
- at the cost of 0,15 USD and
- danger of degradation due to thermal overload of LEDs remains
Conclusion:
Æ
high voltage drop can result in less number of LEDs in respective
branches
Æ
thermal overload can lead to degradation of LEDs neutralizing
the selling argument of long life expectancy of LEDs
Æ
despite significant cost adder, still most critical problems of operating LEDs
remain unsolved
© 2007 Infineon Technologies AG. All rights reserved.
Page 189
Countermeasures against problems in operating LEDs
3rd option: linear mode LED driver from Infineon
> LED Drivers
+ inhomogenous light emission can be solved with controller in each branch
+ low voltage drop
+ brightness variations due to fluctuations of Vs solved by controller
+ danger of degradation due to thermal overload of LEDs solved due to
negative temperature coefficient of LED driver
+ no voltage regulator required
Æ
Conclusion:
Most critical problems of operating LEDs solved at reasonable cost
© 2007 Infineon Technologies AG. All rights reserved.
Page 190
Linear mode LED-drivers from Infineon
BCR 4xx in SOT143R, SOT343 and SC74
> LED Drivers
Benefits
• Low cost and by far superior solution to
resistor based solutions
• Output current adjustable by usage of
external resistor from 10mA to 60mA
• Suitable for Pulse Width Modulation
(PWM), possibility of LED dimming
• Negative temperature coefficient serves
as protection for LEDs at
higher temperatures
Supply Voltage
LED Driver
BCR4XX
Control
circuit
Rint
REXT
Sense
(optional)
Application Note
• AN066
Control
LEDs
ON /
OFF
© 2007 Infineon Technologies AG. All rights reserved.
Page 191
Overview of general purpose linear mode LED drivers
> LED Drivers
Application
Package
Vcc, max
Id,typ
Id,max Vdrop
Ptot
RthJS
Samples
BCR401R
low current
LED Driver
SOT143R
18V
10mA
60mA
1.2V
330mW
190K/W
mass
production
BCR402R
universal LED
Driver
SOT143R
18V
20mA
60mA
1.4V
330mW
190K/W
mass
production
NEW! BCR401W
low current
LED Driver
SOT343
18V
10mA
60mA
1.2V
500mW 110K/W
samples
available
NEW! BCR402W
universal LED
Driver
SOT343
18V
20mA
60mA
1.4V
500mW 110K/W
samples
available
Brand NEW!BCR401U
med. current
LED Driver
SC74
40V
10mA
65mA
1.4V
500mW
65K/W
samples
available
in April
BCR402U
med. current
LED Driver
SC74
40V
20mA
65mA
1.4V
500mW
65K/W
mass
production
BCR405U
high current
LED Driver
SC74
40V
50mA
65mA
1.5V
500mW
65K/W
mass
production
Æ 3 new products added into the portfolio closing the gap
© 2007 Infineon Technologies AG. All rights reserved.
Page 192
Application Note – AN101
Driving high current LED’s using BCR401R
> LED Drivers
BCR401R as Controller
Features
• High LED currents of up to 700mA, but
sweet spot from 65mA to 400mA,
mainly for 0,5W & 1W LEDs)
Benefits
• Reasonable overall system cost
• Stable light emission
• Suitable for Pulse Width Modulation
(PWM), possibility of LED dimming
• Negative temperature coefficient serves
as protection for LEDs at higher
temperatures
Recommended Power Transistors
• BCX65-25 (in SOT89 package), in
mass production
• BC817SU (in SC74 package,
samples available)
© 2007 Infineon Technologies AG. All rights reserved.
Page 193
Application Note – AN101:
70% efficiency for driving LED’s with linear solution
> LED Drivers
Pie Chart showing power dissipation in circuit elements.
Note that ~ 70% of the available power (4008mW) is consumed in the Light Emitting Diodes.
Power Dissipation Budget, LED Driver Application Board +12V
Supply, 334mA LED Current
( Three 1-Watt LEDs, White OSRAM "Golden Dragon" LW W5SM )
Schottky Diodes D1 and D3
(Reverse Polarity Protection)
Sense Resistor R1
(Determines LED current)
LEDs D5, D6, D7
Booster Transistor Q1
Base Resistor R2
BCR401R LED Driver IC
© 2007 Infineon Technologies AG. All rights reserved.
Page 194
Application Note – AN101:
Driving high current LED’s using BCR401R
> LED Drivers
© 2007 Infineon Technologies AG. All rights reserved.
Page 195
High Precision Controller for High Brightness LED´s BCR450
> LED Drivers
Features
• Typ. 150mV voltage drop across Rsense
• Current variation smaller than +/- 10%
over the whole operating temperature
range (-25 to 125°C)
• Microcontroller enable input for PWM, no
Digital Transistor required
• Thermal shutdown (Tj = 150 ... 180 °C)
• Operates up to 27 V
Benefits
• Lower part count
Æ no digital transistor needed for
microcontroller enable input for PWM
Æ no capacitors needed to prevent
oscillating
• Higher number of LEDs in one branch due
to low voltage drop
• Protection of LEDs due to thermal shutdown
• LED brightness constant over the temp range
Recommended Power Transistors
• BCX65-25 (SOT89)
• BC817SU (SC74, samples available)
• Samples for LED controller, April 2007,
• Volume, starting mid 2007
© 2007 Infineon Technologies AG. All rights reserved.
Page 196
Comparison High Current LED controller solutions
Low cost BCR401R vs NEW medium cost BCR450
> LED Drivers
Application Note - AN101
based on existing products
BCR401R
NEW!!! – Volume mid 2007
BCR450
Æ Voltage overhead
min. 1.1V, using external power stage,
Vref = 0.85 V
Æ Precision of Iout:
+10% initial (@ Vs = 10V; Tj = 25°C)
+ Vsupply variation (1 %/V)
+ temperature coefficient
( -0.2 %/K)
Æ Voltage overhead
min. 0.4V, using external power stage,
Vref = 0.15 V
Æ Precision of Iout:
+/- 10% in whole operating range
(Vsupply; Tj)
Æ Thermal shutdown to protect
lamp modules from thermal
overstress
Æ Microcontroller compatible
‚enable input‘ for PWM operation
© 2007 Infineon Technologies AG. All rights reserved.
Page 197
Demo Board for High Current Applications
using BCR450
> LED Drivers
BCR450
optional: LUMILED LUXEON
OSRAM Golden Dragon
optional: Booster Transistors
BC817SU
Booster Transistors BCX68-25
optional: OSRAM PowerTop-LED
optional: Advanced OSRAM PowerTop-LED
© 2007 Infineon Technologies AG. All rights reserved.
Page 198
Summary
> LED Drivers
Infineon small signal discretes offers a range of low cost LED drivers from
10mA up to 700mA
LED drivers can be used either
Æ as standalone drivers for currents 10mA to 65mA or
Æ as LED controller in combination with a booster transistor
for currents from 65mA up to 700mA see AN101
Main applications so far are
Æ neon bulb replacement for signage / advertising & accent lighting
Æ side markers at trucks, low cost applications in cars,
Æ big LED displays etc
Æ further cost sensitive applications
The Infineon portfolio was further complemented by three new products,
BCR401W, BCR402W and BCR401U in the low cost segment
For higher requirements for LED drivers the new BCR450
Æ low voltage drop / high precision LED controller will be available in
volume from mid 2007,samples available in April 2007
© 2007 Infineon Technologies AG. All rights reserved.
Page 199
Table of Contents
Applications
RF Discretes
Schottky Diodes
HiPAC, TVS Diodes, Silicon Mircrophone
LED Drivers
AF Discretes
General Information
© 2007 Infineon Technologies AG. All rights reserved.
Page 200
Table of Contents
AF Discretes
Introduction
Digital Transistors
General Purpose Transistors
General Purpose Diodes
© 2007 Infineon Technologies AG. All rights reserved.
Page 201
Our Core Know-how is Used Across Many Applications
> AF Discretes > Introduction
Autmotive
Safety
Power train
Infotainment
…
Digital
Digital
Transistors
Transistors
GP
GP Transistors
Transistors
GP
GP Diodes
Diodes
Consumer
Disc
Disc Drives
Drives
PCMCIA
PCMCIA
Modems
Modems
TV/VCR-Chassis
TV/VCR-Chassis
Set-Top
Set-Top Box
Box
Digital
Digital Still
Still Camera
Camera
Camcorder
Camcorder
Portable
Portable Audio
Audio
Motherboards
Motherboards
MP3
MP3
…
…
Communication
Cordless Phones
Mobile Phones
Base Stations
Disc Drives
PCMCIA
Modems
…
© 2007 Infineon Technologies AG. All rights reserved.
Page 202
AF small signal discretes with higher value proposition
> AF Discretes > Introduction
Digital transistors
500mA digital transistors in SOT23 like BCR503, BCR521, BCR583 etc)
AF transistors
Current mirror applications (BCV61 / BCV62)
Precision matched current mirror (BCM846S / BCM856S)
High voltage applications (BCV26,27,46,47 & BCX41,42)
High current transistors (BDP9x)
AF diodes
Low leakage diodes (BAS116, BAV170, 199, BAW156)
BAS28 & BAW101 in SOT143 and BAS28W SOT343
High reverse voltage BAW78 & BAW79
Bridge rectifier BGX50A
General
Double die packages SOT363 & SC74 like BAV99S, BC847PN, BCR133S,
BAS21U, BC817UPN, BC807U, BCR523U, and many others)
Æ Look for applications for these products and
promote strongly these products
© 2007 Infineon Technologies AG. All rights reserved.
Page 203
Table of Contents
AF Discretes
Introduction
Digital Transistors
General Purpose Transistors
General Purpose Diodes
© 2007 Infineon Technologies AG. All rights reserved.
Page 204
Value proposition with Digital Transistors
GP Transistors with Built-in Resistor Network
> AF Discretes > Digital Transistors
Higher value proposition
Double die packages SOT363 & SC74 like BCR133S, BCR08PN,
BCR523U etc)
Main application:
Automotive, Industry other
Major competition: Rohm, NXP, ON Semi
500mA single die package SOT23 like BCR503, BCR521, BCR583
etc)
Main application:
Automotive, Industry other
Major competition: Rohm, NXP, ON Semi
Æ 1st priority for promotion
100mA single die package SOT23 like BCR108, BCR133, BCR183 etc)
Main application:
Automotive, Industry other
Major competition: Rohm, NXP
Æ 2nd priority for promotion
© 2007 Infineon Technologies AG. All rights reserved.
Page 205
Digital Transistors Single Chip Versions
> AF Discretes > Digital Transistors
R1
(kOhm)
R2
(kOhm)
100
2.2
2.2
2.2
4,7
4,7
4,7
4,7
1
1
10
10
10
22
22
22
47
47
47
100
2.2
10
47
4.7
10
47
1
10
10
47
22
47
22
47
SOT23
V C80 50V, I C 100mA
npn
pnp
--BCR103
--BCR108
BCR112
BCR114
BCR116
BCR119
----BCR129
BCR133
BCR135
BCR139
BCR141
BCR142
BCR146
BCR148
---
--BCR153
--BCR158
BCR162
--BCR166
BCR169
------BCR183
BCR185
BCR189
BCR191
BCR192
BCR196
BCR198
---
SOT23
V C80 50V, I C 100mA
npn
pnp
SOT323
V C80 50V, I C 100mA
npn
pnp
------- *
BCR108W
BCR112W
--BCR116W
BCR119W
----BCR129W
BCR133W
*
BCR135W
--BCR141W
BCR142W
BCR146W
BCR148W
---
------BCR158W
----BCR166W
BCr169W
------BCR183W
*
BCR185W
--BCR191W
BCR192W
BCR196W
BCR198W
---
*
--BCR503
BCR505
----------BCR521
BCR523
--BCR533
---*
-------------
--BCR553
BCR555
----------BCR571
BCR573
--BCR583
---------------
Not listed resistor values / combinations can be offered on demand
© 2007 Infineon Technologies AG. All rights reserved.
Page 206
Digital Transistors Multichip Versions
> AF Discretes > Digital Transistors
SOT363
R1
R2
[kOhm]
[kOhm]
2,2
2,2
4,7
4,7
4,7
1
10
10
10
22
22
22
47
47
47
2,2
2,2
47
4,7
47
Dual digital
transistor array
2 * npn
2 * pnp
BCR108S
BCR116S
BCR119S
SC74
[VCE0 50V ;
IC 100mA]
npn + pnp
22
47
22
47
47
47
2 * npn
2 * pnp
VCEO50V;
IC 500 mA
npn + pnp
BCR08PN
BCR169S
10
10
47
Dual digital
transistor array
BCR523U
BCR129S
BCR133S
BCR135S
BCR183S
BCR185S
BCR141S
BCR148S
npn
pnp
BCR10PN
BCR35PN
BCR22PN
BCR198S
BCR48PN
composite versions
low Vcesat switch
Not listed resistor values / combinations can be offered on demand
© 2007 Infineon Technologies AG. All rights reserved.
Page 207
Table of Contents
AF Discretes
Introduction
Digital Transistors
General Purpose Transistors
General Purpose Diodes
© 2007 Infineon Technologies AG. All rights reserved.
Page 208
Higher value proposition
with General Purpose Transistors
> AF Discretes > General Purpose Transistors
Higher value proposition
Double die packages SOT363 & SC74
(BC846S, BC847PN, BC817UPN, BC807U etc)
Main application:
Automotive, Industry other
Major competition: NXP, ON Semi, other
Current mirror applications (BCV61 / BCV62)
Automotive, Industry other
Main application:
Major competition: NXP, ON Semi, other
Precision matched current mirror (BCM846S / BCM856S)
Automotive, Industry other
Main application:
Major competition: NXP
High voltage applications (BCV26,27,46,47 & BCX41,42)
Automotive, Industry other
Main application:
Major competition: NXP
High current transistors (BDP9x)
Telecommunication
Main application:
Major competition: Zetex
Æ 1st priority for promotion
© 2007 Infineon Technologies AG. All rights reserved.
Page 209
General Purpose AF Transistors
> AF Discretes > General Purpose Transistors
Package
SOT89
SOT223
SOT23
SOT323
General Purpose AF Transistors
Current
Mirror
Precision matched current
mirror
Low Noise Transistors
(Noise Figure 2000)
BCV29/49
BCV28/48
BCP49
BSP5x
BSP6x
PZTA14
Fast switching
(Storage time 100V)
BFN18
BFN19
General Purpose-
BCX5x
BCX5x
BCX68
BCX69
NPN-Type
BFN38
BFN39
PZTA42
PZTA92
BDP9xx
BDP9xx
BCP5x
BCP5x
BCW60FF
BC850B
BC860B
BCV27
BCV26
BCV47
BCV46
SMBTA14
SMBT3904
SMBT3906
BCX41
BCX42
BFN24/26
BFN27
SMBTA42/MMBTA42
SMBTA92/MMBTA92
BC81x
BC80x
BC84x
BC85x
BCW6x
BCW6x
SOT143
SOT363
BCV61
BCV62
BC846S
BC856S
BCM846S
BCM856S
SC74
SMBT3904S
SMBT3904U
SMBT3906S
SMBT3906U
SMBT3904PN SMBT3904UPN
BC81xW
BC80xW
BC84xW
BC85xW
BC84xS
BC85xS
BC817U
BC807U
BC817UPN
BC817SU
BC846U
BC856U
BC846UPN
SMBTA06UPN
PNP-Type
© 2007 Infineon Technologies AG. All rights reserved.
Page 210
BCM846S / BCM856S
Matched Dual Transistor Arrays
> AF Discretes > General Purpose Transistors
Features
±10% ǻIc matching in current mirror
circuit
Vce0 > 65 V
Ic = 100 mA
hFE = 200 – 450
Ideal for:
Current mirror circuits
Current-sense applications
Discrete Voltage regulators
SOT363 package
Available as:
NPN (BCM846S) and PNP (BCM856S)
Small footprint (SOT363)
Application slides available
© 2007 Infineon Technologies AG. All rights reserved.
Page 211
Table of Contents
AF Discretes
Introduction
Digital Transistors
General Purpose Transistors
General Purpose Diodes
© 2007 Infineon Technologies AG. All rights reserved.
Page 212
General Purpose Diodes
> AF Discretes > General Purpose Diodes
Functionalities
Rectifier
Switching / High Speed switching
Circuit protection
Requirements
High voltage diodes (VR)
Low leakage current (IR)
High variation of allowable current (IF)
Fast recovery time (trr)
Small diode capacitance (CT)
Small packages and more elements / package
© 2007 Infineon Technologies AG. All rights reserved.
Page 213
Broad AF Diode product portfolio
Customer can optimize Reverse Current vs Reverse Voltage
> AF Discretes > General Purpose Diodes
High value proposition,
Less commoditizied market
Leakage current vs. Reverse voltage
(at 25°C)
10
SOT89
SOT23
1
BAW78/79D
SMBD914/7000
SOT23
IR (µA)
SOT23
BAL99
BAL/R 74
0,1
SOT23
SOT23,
BAW101
SOT143
BAS21
BAS16/28,
BAV70/99, BAW56
0,01
SOT23
BAS116,
BAV170/199,
BAW156
0,001
0
50
100
150
200
250
300
350
400
450
500
VR (V)
© 2007 Infineon Technologies AG. All rights reserved.
Page 214
Higher value proposition
with General Purpose Diodes
> AF Discretes > General Purpose Diodes
Higher value proposition
Multiple (>2) die packages SOT363 & SC74
(BAV70S, BAV99S, BAW56S, BAS16S, BAS21U etc)
Main application:
Automotive, Industry other
Major competition: NXP, ON Semi, other
Low leakage diodes (BAS116, BAV170, 199, BAW156)
Main application:
Automotive, Consumer, other especially high
temperature applications to limit leakage current
ex avoid battery discharge
Major competition: NXP
BAS28 & BAW101 in SOT143 and BAS28W SOT343
Main application:
Automotive, Industry other two galvanically
isolated diodes, BAS28 for 100V, BAW101 for
300V reverse voltage
Major competition: NXP
High reverse voltage BAW78 & BAW79 (400V, 1A)
Main application:
Rectifier diode for Automotive, Industry other
Major competition: NXP
Bridge rectifier BGX50A
Main application:
Rectifier for Automotive, Industry other
Major competition: NXP
Æ 1st priority for promotion
© 2007 Infineon Technologies AG. All rights reserved.
Page 215
General Purpose Diodes Product Portfolio
> AF Discretes > General Purpose Diodes
Infineon offers a variety of General Purpose Diodes
Today > 60 types
Available in different packages and configurations
Customer can choose ideal product for specific application
High Speed switching Diodes
VR 100V; IF 250mA; IR < 500 nA; trr< 4ns
Switching Diodes
VR 300V; IF 250mA; IR < 150 nA; trr< 1µs
Low Leakage Diodes
VR = 80V; IF 250mA; IR < 5nA; trr < 1.5µs
Rectifier Diodes
VR = 400V; IF = 1A; IR < 1µA
Bridge Rectifier Diodes
VR = 50V; VRM = 70V (peak); IF = 140mA
© 2007 Infineon Technologies AG. All rights reserved.
Page 216
General Purpose Diodes
> AF Discretes > General Purpose Diodes
Application Power Supply
AC
Power
Supply
DC
IC
BGX50A
EMI/EMC filter
Product
BGX50A
BGX400
Vrmax / V Ifmax / mA
50
140
400
250
VBR / V IR / µA @ VR / V VF / V @ IF / mA
rr
50
< 0.20
50
< 2.60
100
< 6.0 ns
>400 < 1.00
400
< 2.00 2000 < 1.0 µs
© 2007 Infineon Technologies AG. All rights reserved.
Page 217
General Purpose Diodes
> AF Discretes > General Purpose Diodes
Device Family
g.p. diodes for
rectifying and
switching &
clamping
V R [V]
I F [mA]
Configuration
SOT 143 /
SC61
SOT 363 /
SC88
50
140
fullbridge rectifier
BGX 50 A
70
200
dual 2* comm. Cathode
BAV 70 S BAV 70 U
75
250
Three parallel
BAS 16 S BAS 16 U
70
200
dual 2* series connected
BAV 99 S BAV 99 U
70
200
dual 2* comm. Anode
BAS 56 S BAS 56 U
200
250
Three parallel
SC 74
BAS 21 U
6
5
4
6
5
4
6
5
4
6
5
4
1
2
3
1
2
3
1
2
3
1
2
3
© 2007 Infineon Technologies AG. All rights reserved.
Page 218
Switching and Rectifier Diodes
> AF Discretes > General Purpose Diodes
Product
VRmax
IFmax
IFSmax
BAS21xx
200 V
300 V
250 mA
250 mA
4.5 A
4.5 A
400 V
1A
10 A
BAW101
BAW78xx
BAW79xx
IR
@VRmax
VF
< 100 nA < 1.25 V
< 150 nA < 1.3 V
< 1 µA
@ IF
CT
trr
200 mA
100 mA
< 5 pF
6 pF
< 50 ns
1 µs
1A
10 pF
1 µs
< 1.6 V
Three basic types - Different packages and configurations !
Main Application: Switching, where high breakdown voltage is needed
Æ e.g. modems
© 2007 Infineon Technologies AG. All rights reserved.
Page 219
Low Leakage Diodes
> AF Discretes > General Purpose Diodes
Product
VRrmax
IFmax
IFSmax
IR
@VR=75V
VF
@ IF
CT
trr
BAS116
BAW156
BAV170
BAV199
80 V
200 ...
250 mA
4.5
< 5 nA
< 1.25 V
150 mA
2 pF
< 3 µs
One basic type - Different packages and configurations !
Main Application: Low leakage switching applications especially high
temperature applications
© 2007 Infineon Technologies AG. All rights reserved.
Page 220
High Speed Switching Diodes
Mainly commodity parts
> AF Discretes > General Purpose Diodes
Product
BAS16xx
BAS28xx
BAV70xx
BAV99xx
BAW56xx
BAR74
BAL74
BAL99
SMBD914
SMBD7000
VRmax
IFmax
IFSmax
50 ...
100 V
200 ...
250 mA
4.5 A
IR @
Vrmax
VF
@ IF
CT
trr
< 100 ... >1.00 ... 100 ...
< 2 pF < 4 ns
< 500 nA < 1.25 V 150 mA
One basic type - Different packages and configurations !
Main Application: High Speed Switching
© 2007 Infineon Technologies AG. All rights reserved.
Page 221
Summary AF discretes
> AF Discretes
• Not all AF products are pure commodity, there are some products that
offer higher value to customer
• For AF discretes rather than small packages like SC75, TSFP & TSLP
double / triple die packages seem to provide higher value to the customer
like saving board space
• Also current mirror applications, higher voltage and high current or high
power components seem to be less commoditized and herewith under
less price pressure
© 2007 Infineon Technologies AG. All rights reserved.
Page 222
Table of Contents
Applications
RF Discretes
Schottky Diodes
HiPAC, TVS Diodes, Silicon Mircrophone
LED Drivers
AF Discretes
General Information
© 2007 Infineon Technologies AG. All rights reserved.
Page 223
Table of Contents
General Information
Packages
Internet Navigation
Application Notes
Nomenclature
MatQ
© 2007 Infineon Technologies AG. All rights reserved.
Page 224
Packages for Silicon Discretes
WLP
> General Information > Packages
A5
A4
A3
A2
B5
B4
B3
B2
A1
B1
C5
C4
C3
C2
C1
D5
D4
D3
D2
D1
E5
E4
E3
E2
E1
0.13 mm
Leadless
S-WLP-11 (2116)
TSLP-2-1
S-WLP-8 (1616)
TSLP-4-3
S-WLP-10 (20165)
S-WLP-16
S-WLP-25
TSSLP-2
TSLP-2-7 (RH*)
TSLP-4-4
TSLP-7-4
TSLP-3-7/8 (RH*)
Flatlead
TSLP-3-1/4
SCD80
Gullwing
SOT89
TSLP-6-1
TSLP-4-7 (RH*)
TSLP-7-1
SC79
TSFP-3
SOD323
SOT23
SOT223
SOT323
TSFP-4
SOT343
SOT363
TSLP-3-9 (LH)**
TSLP-16
* Reduced Height 0.4mm max.
** Low Height 0.32mm max.
TSSFP-3
SC74
SC75
© 2007 Infineon Technologies AG. All rights reserved.
Page 225
Diode packages on the way for smallest size
> General Information > Packages
20% height reduction
70% footprint reduction
20% height reduction
TSLP-4-4
TSLP-2-1
TSLP
TSLP-2/3/4
Package Height
0,50 mm max.
1,0 x 0,6 x 0,4 mm /
TSLP-RH
TSLP-2/3/4-RH
Reduced Height
TSSLP
0,40 mm max.
TSSLP-2
1,2 x 0,8 x 0,4 mm
1,0 x 0,6 x 0,39 mm /
1,2 x 0,8 x 0,39 mm
Package Height
0.32 mm max.
0,6 x 0,3 x 0,31 mm
2003
2004
© 2007 Infineon Technologies AG. All rights reserved.
2005
Page 226
Table of Contents
General Information
Packages
Internet Navigation
Application Notes
Nomenclature
MatQ
© 2007 Infineon Technologies AG. All rights reserved.
Page 227
Internet – Quick Online Navigation
> General Information > Internet Navigation
www.infineon.com/smallsignaldiscretes
www.infineon.com/rfmmics
www.infineon.com/microphone
www.infineon.com/rfbipolartransistors
www.infineon.com/esdprotection
www.infineon.com/digitaltransistors
www.infineon.com/hipac
www.infineon.com/generalpurposetransistors
www.infineon.com/tvsdiodes
www.infineon.com/rfmosfet
www.infineon.com/lowcostleddriver
www.infineon.com/varactordiodes
www.infineon.com/hirel
www.infineon.com/pindiodes
www.infineon.com/generalpurposediodes
www.infineon.com/schottkydiodes
© 2007 Infineon Technologies AG. All rights reserved.
Page 228
Table of Contents
General Information
Packages
Internet Navigation
Application Notes
Nomenclature
MatQ
© 2007 Infineon Technologies AG. All rights reserved.
Page 229
Application Notes
> General Information > Application Notes
Product Group
AN - Number
Title
General
022
Simple Microstrip Matching for all Impedances
General
077
Thermal Resistance Calculation
ESD / EMI Protection
079
ESD tests according to the Human Body Model (HBM)
ESD / EMI Protection
100
ESD Protection ESD8V0L series
Diodes
007
DECT (1.9 GHz) Transmit-Receive PIN-Diode Switch
Diodes
013
800-1000 MHz PIN-Diode Transmit-Receive Switch
Diodes
025
1400-1600 MHz PIN-Diode Transmit-Receive Switch
Diodes
033
GSM + PCN Dual-Band Transmit-Receive Switch
Diodes
034
Carrier Lifetime and Forward Resistance in RF PIN Diodes
Diodes
047
Matching Methods for Variable Capacitance Diodes
Diodes
049
DECT Transmit-Receive Switch Using Ultra Small PIN Diodes
Diodes
058
Predict Distortion in PIN-Diode Switches
Diodes
061
W-CDMA 2.3 GHz VCO using BFR360F and BBY58-02V
Diodes
065
Schottky Diodes for Clipping, Clamping and Transient Suppression Applications
Monolithic Ics
014
Application Considerations for the Integrated Bias Control BCR400R and BCR400W
Monolithic Ics
027
A 1.9 GHz Low Noise Amplifier Board using Si-MMIC BGA420
Monolithic Ics
030
A 1.9 GHz Low Noise Amplifier Board using Si-MMIC BGA427
Monolithic Ics
062
A Low Parts Count Low Noise Amplifier for GPS Applications using BGA428
© 2007 Infineon Technologies AG. All rights reserved.
Page 230
Application Notes
> General Information > Application Notes
Product Group
AN - Number
Title
Monolithic Ics
063
A 1.85 GHz High Gain Low Noise Transistor Amplifier using BGA428
Monolithic Ics
064
Using the BCR410W Bias Controller with BFP405 in Amplifier Circuits
Monolithic Ics
066
Constant Current LED Driver
Monolithic Ics
067
General Purpose Wide Band Driver Amplifer using BGA614
Monolithic Ics
069
The BGA622 SiGe Universal LNA MMIC in 1800 - 2500 MHz Receiver Applications
Monolithic Ics
086
ESD Protection (1: Simple protection structures, 2: BGA622 at 1.575 GHz)
Monolithic Ics
089
The BGA622L7 SiGe Universal Low Noise Amplifier MMIC in UMTS Receiver Applications
Monolithic Ics
090
The BGA622L7 SiGe Universal Low Noise Amplifier MMIC in GPS Receiver Applications
Monolithic Ics
091
BGA615L7 S11 improved
Monolithic Ics
093
BGA615L7 area improved
Monolithic Ics
098
MMICs for TV-tuner applications
Monolithic Ics
101
High current LED driver using BCR402U
Transistors
001
SIEGET 25 Low Noise Amplifier with BFP420 Transistor at 2.4 GHz
Transistors
002
SIEGET 25 Silicon Bipolar Dielectric Resonator Oscillator (DRO) at 10 GHz
Transistors
003
The Vceo-Mystery or How to use Low-Vceo-Transistors with High Operating Voltages
Transistors
008
Define a Small Signal RF-Transistor: S-Parameters, Noise Figure and Intermodulation
Transistors
015
Low Noise Amplifier Optimized for Minimum Noise Figure at 1.9 GHz using BFP420
Transistors
016
Low Noise Amplifier Optimized for Input and Output Return Loss at 1.9 GHz using BFP420
Transistors
017
A Low Noise Amplifier with good IP3out Performance at 1.9 GHz using BFP420
© 2007 Infineon Technologies AG. All rights reserved.
Page 231
Application Notes
> General Information > Application Notes
Product Group
AN - Number
Title
Transistors
018
A Low Noise Amplifer at 900 MHz using SIEGET BFP420
Transistors
019
A Low Noise Amplifier with good IP3out Performance at 1.9 GHz using BFP405
Transistors
020
A Low Noise Amplifer at 1.9GHz using BFP405
Transistors
021
A Low Noise Amplifier shows good Noise Figure Perfomance at 1.9 GHz using BFP405
Transistors
023
Designing Oscillators with low 1/f-Noise
Transistors
024
Capacitances in Bipolar Junction Transistors
Transistors
026
A Medium Power Amplifier at 1.9 GHz using BFP450
Transistors
031
A Low Noise Amplifier at 1.9 GHz offers +14 dBm Input Intercept Point
Transistors
050
A Power Amplifier Module at 1.9 GHz using BFP450 and BFP490
Transistors
051
SIEGET 45 - Low Noise Amplifier with BFP520 Transistor at 1.9 GHz
Transistors
057
A 1.9 GHz Low Noise Amplifer Optimized for High IP3 using BFP540
Transistors
060
A High Third-Order Intercept Low Noise Amplifier for 1900 MHz Applications Using BFP620
Transistors
061
W-CDMA 2.3 GHz VCO using BFR360F and BBY58-02V
Transistors
075
High Third-Order Input Intercept Point CDMA 800 Low Noise Amplifier
Transistors
082
A Low-Cost, Two-Stage Low Noise Amplifier for 5 - 6 GHz Applications Using BFP640
Transistors
095
Evaluation report and application guide for low-voltage-capable RF MOSFET BF5030W
Transistors
099
315 MHz Oscillator Solution for Remote Keyless Entry System using BFR182
© 2007 Infineon Technologies AG. All rights reserved.
Page 232
Table of Contents
General Information
Packages
Internet Navigation
Application Notes
Nomenclature
MatQ
© 2007 Infineon Technologies AG. All rights reserved.
Page 233
Nomenclature –
Type Designation Guide Discretes
> General Information > Nomenclature
Diodes
BA…
BB…
BAR…
BAS…/ BAT…
BBY…
ESD…
PIN / Switching diodes, mainly for Consumer market
Varactor diodes, mainly for Consumer market
PIN diodes, mainly for Mobile Comm market
Schottky diodes
Varactor diodes for VCO application
TVS and ESD protection diodes
Varactor Diodes Tuner Applications
SOD323
SCD80
BB639 ĺ +20 =
BB535 ĺ +20 =
…
BB659
BB555
…
SC79
+ ext.02V BB659-02V
+ ext.02V BB555-02V
…
© 2007 Infineon Technologies AG. All rights reserved.
Page 234
Nomenclature –
Type Designation Guide Discretes
> General Information > Nomenclature
Transistors
BF…
BG…
BFR…
BFP…
BFS…
BFG…
BFQ…
BGA
BC…
BCR…
BCR4….
SIEGET®
SiGe
SiGe:C
RF MOSFETs or Bipolar Transistor. Mainly for consumer application
Dual RF MOSFETs in SOT363
RF Bipolar Transistor in SOT23
RF Bipolar Transistor in SOT143
Dual RF Bipolar Transistor in SOT363
RF Bipolar Transistor in SOT223
RF Bipolar Transistor in SOT89
RF MMICs
AF Transistor
AF Transistor with built in resistors (=Dual Transistor)
BCR1xx = 100mA types, BCR5xx = 500mA types.
(149 = PNP)
AF Small Scale Integrated Cicuits SSIC
BFP4xx, BFP5xx series (Siemens Grounded Emitter Transistor)
BFP6xx series (Silicon Germanium Transistor)
BFP7xx series (Silicon Germanium Carbon Transistor)
© 2007 Infineon Technologies AG. All rights reserved.
Page 235
Nomenclature –
Type Designation Guide Discretes
> General Information > Nomenclature
Extensions
R
W
S
T
U
F
RH
L3LH
L3 / L4 / L6
-02V / -02W
-02L / -02LRH / -02LS
-07LRH/098LRH/099LRH
-03W
-04 / 05 / 06
-04W / 05W / 06W
-07 / -07W
PN
Reverse pining
!!! SOT343 is always in reverse pining, i.e. there is no e.g. BF2030RW !!!
Next smaller package e.g. BFR181 (SOT23) ĺ BFR181W (SOT323)
!!! SIEGETs are in SOT343 but have no “W” as there are no SIEGETs in SOT143 !!!
SOT363 package
SC75 package
SC74 package
Flat lead package (TSFP3/4)
Reduced Height version of TSLP package (max. 0.4 mm)
Low Height version of 3pin transistor TSLP package (max. 0.32 mm max.)
Leadless Package TSLP3 / TSLP4 / TSLP6
Diodes in SC79 / SCD80 package
Diodes in TSLP2 / TSLP2-RH / TSSLP package
Dual Diodes in TSLP4-RH package
SOD323 package (for IT and AF diodes)
Dual diodes in SOT23 package (series/com. cath/com. anod.)
Dual diodes in SOT323 package (series/com. cath/com. anod.)
Dual diodes in SOT143 / SOT343 package (parallel)
Dual transistors (1pnp + 1 npn) in one package
Further extensions for AF components
A, B, C, … or
-16, -25, -40
Current gain groups (same chip), e.g. BC846A, BC846B,…
© 2007 Infineon Technologies AG. All rights reserved.
Page 236
Table of Contents
General Information
Packages
Internet Navigation
Application Notes
Nomenclature
MatQ
© 2007 Infineon Technologies AG. All rights reserved.
Page 237
MatQ - Product Material Declaration
> General Information > MatQ
How are materials declared?
Substances and materials contained in IFX products are declared via Umbrella
Specification (U-Spec) in accordance to IEC 61906
The U-Spec declares full materials present in Infineon
product(s) in concentrations above 0.1 % by weight (1000 ppm).
Trace concentrations of materials (i.e. those < 0.1 % by weight) present in products
are marked with an "X" if they are intentionally added substances-of-concern
(e.g. CEFIC-EECA-EICTA).
How to obtain U-Specs?
Please contact your Infineon Sales interfacing unit
© 2007 Infineon Technologies AG. All rights reserved.
Page 238
RoHS Compliance
> General Information > MatQ
Infineon products DO NOT contain
Chromium-VI (Cr-VI) Cr
Cadmium (Cd) Cd
Mercury (Hg) Hg
polybrominated diphenylethers (PBDE)
polybrominated biphenyls (PBB)
in compliance with the RoHS Directive (2002/95/EC).
Lead (Pb)
Pb
is currently being phased out in our Green conversion strategy
(www.infineon.com – product – packages)
© 2007 Infineon Technologies AG. All rights reserved.
Page 239
Declarations
> General Information > MatQ
What declarations and statments are currently available?
Declaration of non-use of substances of concern
RoHS Declaration
Umbrella Spec or Material Content Data Sheet
Declaration of RoHS compliance throughout the supply chain
For these, please contact your Infineon interfacing unit
www.infineon.com/matq
© 2007 Infineon Technologies AG. All rights reserved.
Page 240
Edition 2007-05
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding
the application of the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
© 2007 Infineon Technologies AG. All rights reserved.
Page 241
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