BGS12SN6E6327XTSA1

BGS12SN6 Wideband RF SPDT Switch in small package with 0.77mm2 footprint Data Sheet Revision 2.3, 2016-09-07 Power Management & Multimarket Edition September 7, 2016 Published by Infineon Technologies AG 81726 Munich, Germany c 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGS12SN6 Revision History Document No.: BGS12SN6.pdf Previous Version: Revision v2.2 - 2016-08-03 Page Subjects (major changes since last revision) 9 Update Test conditions of RF input power Trademarks of Infineon Technologies AG AURIXTM , C166TM , CanPAKTM , CIPOSTM , CIPURSETM ,CoolGaNTM ,CoolMOSTM , CoolSETTM , CoolSiCTM , CORECONTROLTM , DAVETM , DI-POLTM ,EasyPIMTM , EconoBRIDGETM , EconoDUALTM , EconoPACKTM , EconoPIMTM , EiceDRIVERTM , eupecTM , FCOSTM , HITFETTM , HybridPACKTM , ISOFACETM , I2 RFTM , IsoPACKTM , MIPAQTM , ModSTACKTM , my-dTM , NovalithICTM , OmniTuneTM , OptiMOSTM , ORIGATM , OPTIGATM , PROFETTM , PRO-SILTM , PRIMARIONTM , PrimePACKTM , RASICTM , ReverSaveTM , SatRICTM , SIEGETTM , SIPMOSTM , SOLID FLASHTM , SmartLEWISTM , TEMPFETTM , thinQ!TM , TriCoreTM , TRENCHSTOPTM . Other Trademarks Advance Design SystemTM (ADS) of Agilent Technologies, AMBATM , ARMTM , MULTI-ICETM , PRIMECELLTM , REALVIEWTM , THUMBTM of ARM Limited, UK. AUTOSARTM is licensed by AUTOSAR development partnership. BluetoothTM of Bluetooth SIG Inc. CAT-iqTM of DECT Forum. COLOSSUSTM , FirstGPSTM of Trimble Navigation Ltd. EMVTM of EMVCo, LLC (Visa Holdings Inc.). EPCOSTM of Epcos AG. FLEXGOTM of Microsoft Corporation. FlexRayTM is licensed by FlexRay Consortium. HYPERTERMINALTM of Hilgraeve Incorporated. IECTM of Commission Electrotechnique Internationale. IrDATM of Infrared Data Association Corporation. ISOTM of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLABTM of MathWorks, Inc. MAXIMTM of Maxim Integrated Products, Inc. MICROTECTM , NUCLEUSTM of Mentor Graphics Corporation. MifareTM of NXP. MIPITM of MIPI Alliance, Inc. MIPSTM of MIPS Technologies, Inc., USA. muRataTM of MURATA MANUFACTURING CO., MICROWAVE OFFICETM (MWO) of Applied Wave Research Inc., OmniVisionTM of OmniVision Technologies, Inc. OpenwaveTM Openwave Systems Inc. RED HATTM Red Hat, Inc. RFMDTM RF Micro Devices, Inc. SIRIUSTM of Sirius Sattelite Radio Inc. SOLARISTM of Sun Microsystems, Inc. SPANSIONTM of Spansion LLC Ltd. SymbianTM of Symbian Software Limited. TAIYO YUDENTM of Taiyo Yuden Co. TEAKLITETM of CEVA, Inc. TEKTRONIXTM of Tektronix Inc. TOKOTM of TOKO KABUSHIKI KAISHA TA. UNIXTM of X/Open Company Limited. VERILOGTM , PALLADIUMTM of Cadence Design Systems, Inc. VLYNQTM of Texas Instruments Incorporated. VXWORKSTM , WIND RIVERTM of WIND RIVER SYSTEMS, INC. ZETEXTM of Diodes Zetex Limited. Last Trademarks Update 2012-12-13 Data Sheet 3 Revision 2.3 - 2016-09-07 BGS12SN6 Contents 1 Features 7 2 Product Description 7 3 Maximum Ratings 9 4 Operation Ranges 9 5 RF Characteristics 10 6 Pin Description 12 7 Package Information 12 Data Sheet 4 Revision 2.3 - 2016-09-07 BGS12SN6 List of Figures 1 2 3 4 5 6 7 8 9 BGS12SN6 Block Diagram . . . . Pin Configuration . . . . . . . . . . Package Outline (TSNP-6-2) . . . Package Outline (TSNP-6-8) . . . Footprint (TSNP-6-2/-8) . . . . . . Pin 1 Marking (TSNP-6-2 top view) Pin 1 Marking (TSNP-6-8 top view) Tape Drawing (TSNP-6-2) . . . . . Tape Drawing (TSNP-6-8) . . . . . Data Sheet . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 12 13 13 14 14 14 15 15 Revision 2.3 - 2016-09-07 BGS12SN6 List of Tables 1 2 3 4 5 6 7 8 Ordering Information Truth Table . . . . . Maximum Ratings . Operation Ranges . RF Input Power . . . RF Characteristics . Pin Description . . . Mechanical Data . . Data Sheet . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 8 9 9 9 10 12 12 Revision 2.3 - 2016-09-07 BGS12SN6 BGS12SN6 Wideband RF SPDT Switch in small package with 0.77mm2 footprint 1 Features • 2 high-linearity TRx paths with power handling capability of up to 30 dBm • High switching speed, ideal for WLAN and Bluetooth applications • All ports fully bi-directional • Low insertion loss • Low harmonic generation • High port-to-port-isolation • 0.05 to 6 GHz coverage • High ESD robustness • On-chip control logic • Very small leadless and halogen free package TSNP-6-2(-8) (0.7x1.1 mm2 ) with super low height of 0.375 mm • No decoupling capacitors required if no DC applied on RF lines • RoHS compliant package 2 Product Description The BGS12SN6 RF MOS switch is specifically designed for WLAN and Bluetooth applications. Any of the 2 ports can be used as termination of the diversity antenna handling up to 30 dBm. This single supply chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL compatible control input signal. The 0.1 dB compression point exceeds the switch’s maximum input power level, resulting in linear performance at all signal levels. The RF switch has a very low insertion loss of 0.25 dB in the 1 GHz and 0.29 dB in the 2.5 GHz range. Unlike GaAs technology, external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally. The BGS12SN6 RF switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness. The device has a very small size of only 0.7x1.1mm2 and a maximum height of 0.375 mm. Table 1: Ordering Information Type Package Marking BGS12SN6 TSNP-6-2/-8 T Data Sheet 7 Revision 2.3 - 2016-09-07 BGS12SN6 RFin BGS12SN6 RF1 RF2 SPDT DGND Ctrl VDD Decoder + ESD Protection Figure 1: BGS12SN6 Block Diagram Table 2: Truth Table Switched Paths Ctrl RFin - RF1 0 RFin - RF2 1 Data Sheet 8 Revision 2.3 - 2016-09-07 BGS12SN6 3 Maximum Ratings Table 3: Maximum Ratings at TA = 25 ◦ C, unless otherwise specified Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Supply Voltage Vdd -0.5 – 3.6 V – Maximum DC-Voltage on Other Pins VDC 0 – 0 V No external DC voltage ◦ allowed Storage Temperature Range TSTG -65 – 150 RF Input Power PRF – – 32 Junction Temperature C – dBm CW, 50 Ohm Tj – – 125 ◦ VESD_HBM −1000 – +1000 V – VESD_RFin −8 – +8 kV RFin versus GND, with – C ESD Capability Human Body Model 1) ESD Capability RFin Port 2) 27 nH shunt inductor 1) Human Body Model ANSI/ESDA/JEDEC JS-001-2012 (R = 1.5 kΩ, C = 100 pF). 2) IEC 61000-4-2 (R = 330 Ω, C = 150 pF), contact discharge. Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. 4 Operation Ranges Table 4: Operation Ranges Parameter Symbol Values Unit Min. Typ. Max. ◦ Note / Test Condition Ambient Temperature TA -40 25 85 C – RF Frequency f 0.1 – 6 GHz – Supply Voltage Vdd 1.8 – 3.5 V – Control Voltage Low VCtrl_L -0.3 – 0.43 V – Control Voltage High VCtrl_H 1.35 – VDD V – Table 5: RF Input Power Parameter RF Input Power (50Ω) Data Sheet Symbol PIn Values Min. Typ. Max. – – 30 9 Unit Note / Test Condition dBm CW, 50 Ohm Revision 2.3 - 2016-09-07 BGS12SN6 5 RF Characteristics Table 6: RF Characteristics Test Conditions (unless otherwise specified): • Terminating port impedance: Z0 = 50 Ω • Temperature range: TA = -40 ... +85 ◦ C • Supply voltage: VDD = 1.8 ... 3.4 V • Input power: PIN = 0 dBm Parameter Symbol Values Unit Note / Test Condition 0.42 dB 699-824 MHz 0.25 0.43 dB 824-915 MHz 0.28 0.45 dB 1710-1910 MHz – 0.29 0.50 dB 2170-2690 MHz – 0.53 0.78 dB 5000 MHz – 0.65 0.90 dB 6000 MHz – 0.23 0.35 dB 699-824 MHz – – 0.25 0.28 0.35 0.40 dB dB 824-915 MHz 1710-1910 MHz – 0.29 0.45 dB 2170-2690 MHz – 0.53 0.70 dB 5000 MHz – 0.65 0.85 dB 6000 MHz 22 30 – dB 699-824 MHz 22 30 – dB 824-915 MHz 20 25 – dB 1710-1910 MHz 17 20 – dB 2170-2690 MHz 12 18 – dB 5000 MHz 12 16 – dB 6000 MHz Min. Typ. Max. – 0.23 – – Insertion Loss All RF Ports IL 1 Insertion Loss All RF Ports IL Return Loss All RF Ports 1 RL TA = +25 ◦ C, VDD = 2.6 V Data Sheet 10 Revision 2.3 - 2016-09-07 BGS12SN6 Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. 36 42 – dB 699-824 MHz 35 40 – dB 824-915 MHz 28 32 – dB 1710-1910 MHz 26 28 – dB 2170-2690 MHz 15 19 – dB 5000 MHz 15 18 – dB 6000 MHz 43 47 – dB 699-824 MHz 42 45 – dB 824-915 MHz 34 38 – dB 1710-1910 MHz 30 33 – dB 2170-2690 MHz 18 21 – dB 5000 MHz 18 21 – dB 6000 MHz – -80 -75 dBc VDD = 2.85V , TA = 25 ◦ C, – -87 -80 dBc f Isolation RFin to RF1/RF2 Port RF1 to RF2 Port / RF2 to RF1 Port ISORFin−RFx ISOPort−Port Harmonic Generation up to 12.75 GHz All RF Ports, 2nd Harmonic All RF Ports, 3rd Harmonic PHarm = 824 MHz, Pin = 27.5 dBm, 50 % duty cycle, 50Ω Compression Point 0.1dB P0.1dB P0.1dB – – 34 dBm – Intermodulation Distortion in Rx Band IMD2 IMD2 – -110 -100 dBm Tx = 10 dBm, Interferer = -15 IMD3 IMD3 – -130 -120 dBm dBm, 50Ω Switching Time and Current Consumption RF Rise Time t10%−90% – 60 100 ns 10% - 90% of RF Signal Ctrl to RF Time tCtrl−RF – 400 500 ns 50% of Ctrl Signal to 90% of RF Signal Power Up Settling Time tPUP – 5 15 µs After power down Supply Current Idd – 100 180 µA – Control Current ICtrl – 1 10 µA – Note: All electrical characteristics are measured with all RF ports terminated by 50 Ω loads. Data Sheet 11 Revision 2.3 - 2016-09-07 BGS12SN6 6 Pin Description Figure 2: Pin Configuration Table 7: Pin Description Pin No. Name Pin Buffer Type Type Function 1 RF2 I/O RF Port 2 2 GND GND Ground 3 RF1 I/O RF Port 1 4 Vdd PWR Supply Voltage 5 RFin I/O RF Port In 6 CTRL I Control Pin 7 Package Information Table 8: Mechanical Data Parameter Symbol Value Unit X-Dimension X 0.7 ± 0.05 mm Y-Dimension Y 1.1 ± 0.05 mm Size Size 0.77 mm2 Height H 0.375 +0.025/−0.025 mm Data Sheet 12 Revision 2.3 - 2016-09-07 BGS12SN6 Bottom view 0.7 ±0.05 0.2 ±0.05 1) 0.02 MAX. 0.8 ±0.05 3 2 1 4 5 6 1.1 ±0.05 +0.025 0.375 -0.015 0.2 ±0.05 1) Top view 0.4 ±0.05 Pin 1 marking 1) Dimension applies to plated terminals TSNP-6-2-PO V01 Figure 3: Package Outline (TSNP-6-2) Bottomaview 0.7 ±0.05 A 0.1 A 3 2 0.4 2axa 0.4a =a 0.8 0.2 ±0.05 6x Pina1amarking 1 0.4 4 5 6 6x 1.1 ±0.05 0.03aMAX. STANDOFF 0.1 B 0.375 ±0.025 0.2 ±0.05 Topaview B TSNP-6-8-POa V03 Figure 4: Package Outline (TSNP-6-8) Data Sheet 13 Revision 2.3 - 2016-09-07 BGS12SN6 NSMD 0.4 0.4 0.25 0.25 0.4 0.4 0.25 0.25 (stencilmthicknessm100mµm) Copper Stencilmapertures Soldermmask TSNP-6-2/-8-FPmV01 Figure 5: Footprint (TSNP-6-2/-8) 1 Type code Monthly data code Pin 1 marking TSNP-6-2-MK V01 Figure 6: Pin 1 Marking (TSNP-6-2 top view) 1 Type code Monthly data code Pin 1 marking TSNP-6-8-MK V02 Figure 7: Pin 1 Marking (TSNP-6-8 top view) Data Sheet 14 Revision 2.3 - 2016-09-07 BGS12SN6 1.25 Pin 1 marking 8 0.5 2 0.85 TSNP-6-2-TP V01 Figure 8: Tape Drawing (TSNP-6-2) 1.25 Pin 1 marking 8 0.49 2 0.85 TSNP-6-8-TP V01 Figure 9: Tape Drawing (TSNP-6-8) Data Sheet 15 Revision 2.3 - 2016-09-07 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG