BGS12WN6E6327XTSA1

BGS12WN6 BGS12WN6 W i d e ba n d S P DT d i v e r s i t y s w i tc h w i t h f a st s w i tc h i n g s p e e d Features • Suitable for WIFI, Bluetooth and UWB applications • Fast switching speed • High linearity up to 26 dBm input power • Low insertion loss and high port to port isolation up to 9 GHz • Low current consumption • On-chip control logic • Ultra low profile lead-less plastic package 0.7 x 1.1 mm2 • RoHS and WEEE compliant package Potential applications The BGS12WN6 RF switch is specifically designed for UWB, WIFI, and Bluetooth applications. Any of the 2 ports can be used as termination of the diversity antenna handling up to 26 dBm. Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Block diagram Datasheet www.infineon.com Revision 2.5 2021-12-21 BGS12WN6 Wideband SPDT diversity switch with fast switching speed Table of contents Table of contents 1 Features 2 2 Absolute maximum ratings 3 3 Operation ranges 4 4 RF characteristics 5 5 Application information 9 6 Package information Datasheet 10 1 Revision 2.5 2021-12-21 BGS12WN6 Wideband SPDT diversity switch with fast switching speed Features 1 Features • Suitable for WIFI, Bluetooth and applications • Fast switching speed • RF CMOS SPDT antenna diversity switch with power handling capability of up to 26 dBm • Low insertion loss and high port to port isolation up to 9 GHz • 0.05 to 9 GHz coverage • High port to port isolation • No blocking capacitors required if no DC applied on RF lines • On-chip control logic • Leadless and halogen free packages PG-TSNP-6-10/-8/-2 with lateral size of 0.7 × 1.1 mm2 and maximum height of 0.375 mm • No power supply decoupling capacitor required • High EMI robustness • RoHS and WEEE compliant package Description The BGS12WN6 RF CMOS switch is specifically designed for UWB, WLAN, and Bluetooth applications. Any of the 2 ports can be used as termination of the diversity antenna handling up to 26 dBm. The chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL compatible control input signal. Unlike GaAs technology, external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally. The BGS12WN6 RF switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness. The device has a very small size of only 0.7 × 1.1 mm2 and a maximum height of 0.375 mm. Type Marking BGS12WN6 K Datasheet 2 Package Ordering information PG-TSNP-6-10 BGS 12WN6 E6327 PG-TSNP-6-8 BGS 12WN6 E6329 PG-TSNP-6-2 BGS 12WN6 E6329 Revision 2.5 2021-12-21 BGS12WN6 Wideband SPDT diversity switch with fast switching speed Absolute maximum ratings 2 Absolute maximum ratings Table 1: Absolute maximum ratings at T A = 25 ◦C, unless otherwise specified Parameter Symbol Min. Values Typ. Frequency range1) f Supply voltage Unit Note / Test condition Max. 0.05 – 9 GHz – V DD 0 – 4.2 V – -55 – 150 ◦ Storage temperature range T STG RF input power at all RF ports C – PRF,max – – 30 dBm CW / VSWR 1:1 / Z0 = 50 Ω 2) V ESD,CDM -1 – +1 kV – 3) V ESD,HBM -1 – +1 kV – ESD capability, CDM ESD capability, HBM Each single RF-in/out port ver-8 ESD capability RF ports4) – +8 kV sus GND, with 27 nH shunt inductor V ESD,RF Each single RF-in/out port ver-6 – +6 kV sus GND, with 56 nH shunt inductor Junction temperature Tj – – 125 ◦ C – Thermal resistance junction - RthJS – – 70 K/W – V RFDC 0 – 0 V No DC voltages allowed on RF- soldering point Maximum DC-voltage on RF ports and RF-Ground Ports 1) There is also a DC connection between switched paths. The DC voltage at RF ports VRFDC has to be 0 V. 2) Field-Induced Charged-Device Model ANSI/ESDA/JEDEC JS-002. Simulates charging/discharging events that occur in production equipment and processes. Potential for CDM ESD events occurs whenever there is metal-to-metal contact in manufacturing. 3) Human Body Model ANSI/ESDA/JEDEC JS-001 (R = 1.5 kΩ, C = 100 pF). 4) IEC 61000-4-2 (R = 330 Ω, C = 150 pF), contact discharge. Attention: Datasheet Stresses above the max. values listed here may cause permanent damage to the device. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Exposure to conditions at or below absolute maximum rating but above the specified maximum operation conditions may affect device reliability and life time. Functionality of the device might not be given under these conditions. 3 Revision 2.5 2021-12-21 BGS12WN6 Wideband SPDT diversity switch with fast switching speed Operation ranges 3 Operation ranges Table 2: Operation ranges, at T A = −40 ◦C...85 ◦C, V DD = 1.65 V...3.6 V, unless otherwise specified Parameter Symbol Min. Values Typ. Ambient temperature TA Supply voltage Max. -40 25 85 ◦ V DD 1.65 1.8 3.6 V – Control voltage Low V Ctrl,L -0.3 – 0.45 V – Control voltage High V Ctrl,H 1.35 – V DD V – – 63 100 µA – 63 120 µA Operating state – 2 10 nA – Supply current Control current IDD ICtrl Unit C Note / Test condition – Operating state, V DD = 1.8 V, T A = 25 ◦C Table 3: RF Input power, at T A = −40 ◦C...85 ◦C, V DD = 1.65 V...3.6 V, VSWR 1:1 / Z0 = 50 Ω, unless otherwise specified Parameter Symbol Values Min. RF input power at all RF ports Datasheet PRF – Typ. – 4 Unit Note / Test condition 26 dBm CW 30 dBm T A = 25 ◦C, duty cycle