BGS13S4N9E6327

BGS13S4N9 Wideband RF SP3T Switch Data Sheet Revision 1.0 - 2016-04-12 Final Power Management & Multimarket Edition 2016-04-12 Published by Infineon Technologies AG 81726 Munich, Germany c 2016 Infineon Technologies AG All Rights Reserved. LEGAL DISCLAIMER The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGS13S4N9 Confidential Revision History Document No.: BGS13S4N9_Final_v1.0.pdf Revision History: Final Rev. v1.0 Previous Version: Target, Revision v1.0 - 2015-10-21 Page Subjects (major changes since last revision) Trademarks of Infineon Technologies AG TM TM TM TM TM TM TM TM TM TM TM µHVIC , µIPM , µPFC , AU-ConvertIR , AURIX , C166 , CanPAK , CIPOS , CIPURSE , CoolDP , CoolGaN , TM TM TM TM TM TM TM TM TM TM COOLiR , CoolMOS , CoolSET , CoolSiC , DAVE , DI-POL , DirectFET , DrBlade , EasyPIM , EconoBRIDGE , TM TM TM TM TM TM TM TM TM EconoDUAL , EconoPACK , EconoPIM , EiceDRIVER , eupec , FCOS , GaNpowIR , HEXFET , HITFET , TM TM TM TM TM TM TM TM TM TM HybridPACK , iMOTION , IRAM , ISOFACE , IsoPACK , LEDrivIR , LITIX , MIPAQ , ModSTACK , my-d , TM TM TM TM TM TM TM TM TM NovalithIC , OPTIGA , OptiMOS , ORIGA , PowIRaudio , PowIRStage , PrimePACK , PrimeSTACK , PROFET , TM TM TM TM TM TM TM TM TM PRO-SIL , RASIC , REAL3 , SmartLEWIS , SOLID FLASH , SPOC , StrongIRFET , SupIRBuck , TEMPFET , TM TM TM TM TM TRENCHSTOP , TriCore , UHVIC , XHP , XMC . Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. Trademarks updated November 2015 Data Sheet 3 Revision 1.0 - 2016-04-12 BGS13S4N9 Confidential Contents Contents 1 Features 5 2 Product Description 5 3 Maximum Ratings 6 4 Operation Ranges 7 5 RF Characteristics 8 6 GPIO Specification 10 7 Pin Definition and Package Outline 10 List of Figures 1 2 3 4 5 6 BGS13S4N9 Block Diagram . . . . . . . . . . . . . . . Pin out (top view) . . . . . . . . . . . . . . . . . . . . . Package Outline (bottom and side view) . . . . . . . . Land pattern and stencil mask . . . . . . . . . . . . . Marking Pattern . . . . . . . . . . . . . . . . . . . . . . Tape and Reel (Reel φ 180 mm: 15.000 Pieces/Reel) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 10 11 11 12 13 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 6 7 7 7 8 9 10 10 11 12 12 List of Tables 1 2 3 4 5 6 7 8 9 10 11 12 Ordering Information . . . . Maximum Ratings, Table I . Maximum Ratings, Table II . Operation Ranges . . . . . RF Input Power . . . . . . . RF Characteristics . . . . . RF Characteristics . . . . . GPIO Truth Table . . . . . . Pin Configuration . . . . . . Mechanical Data . . . . . . Year Date Code . . . . . . . Week Date Code . . . . . . Data Sheet . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Revision 1.0 - 2016-04-12 BGS13S4N9 Confidential BGS13S4N9 Wideband RF SP3T Switch 1 Features • 3 high-linearity TRx paths with power handling capability of up to 30 dBm • Low insertion loss • Low harmonic generation • High port-to-port-isolation • Suitable for Edge / CDMA2000 / LTE / WCDMA applications • 0.1 to 3.0 GHz coverage • No decoupling capacitors required if no DC applied on RF lines • On-chip control logic including ESD protection • General Purpose Input-Output (GPIO) Interface • Small form factor 1.1 mm x 1.1 mm x 0.375 mm • No power supply blocking required • High EMI robustness • RoHS and WEEE compliant package 2 Product Description The BGS13S4N9 RF MOS switch is specifically designed for cell phone and mobile applications. Any of the 3 ports can be used as termination of the diversity antenna handling up to 30 dBm. This SP3T offers low insertion loss and high robustness against interferer signals at the antenna port and low harmonic generation in termination mode. The on-chip controller integrates CMOS logic and level shifters, driven by control inputs from 1.35 V to VDD . The BGS13S4N9 RF Switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness. The device has a very small size of only 1.1 x 1.1 mm2 and a maximum height of 0.375 mm. No decoupling capacitors are required in typical applications as long as no DC is applied to any RF port. Table 1: Ordering Information Type Package Marking BGS13S4N9 TSNP-9-3 W Data Sheet 5 Revision 1.0 - 2016-04-12 BGS13S4N9 Confidential RFin BGS13S4N9 RF2 RF1 RF3 SP3T DGND VDD V2 V1 Decoder + ESD Pr otection Figure 1: BGS13S4N9 Block Diagram 3 Maximum Ratings Stresses above the maximum values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Table 2: Maximum Ratings, Table I at TA = 25 ◦C, unless otherwise specified Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Frequency Range f 0.1 – 3.0 GHz 1) Supply voltage VDD -0.5 – 3.6 V – 150 ◦ C – C – Storage temperature range TSTG -55 – Junction temperature Tj – – 125 ◦ RF input power at all Rx ports PRF_Rx – – 32 dBm CW 2) VESD_CDM -1000 – +1000 V All pins 3) VESD_HBM -1000 – +1000 V All pins excluding RFin -1000 – +1000 V RFin vs. other pins -8000 – +8000 V ANT versus system GND, ESD capability, CDM ESD capability, HBM 4) ESD capability, system level VESD_ANT with 16 nH shunt inductor Type LQW15AN16NG80 1) There is also a DC connection between switched paths. The DC voltage at RF ports VRFDC has to be 0V. 2) Field-Induced Charged-Device Model JESD22-C101. Simulates charging/discharging events that occur in production equipment and processes. Potential for CDM ESD events occurs whenever there is metal-to-metal contact in manufacturing. 3) Human Body Model ANSI/ESDA/JEDEC JS-001-2012 (R=1.5 kΩ, C=100 pF). 4) IEC 61000-4-2 (R=330 Ω, C=150 pF), contact discharge. Data Sheet 6 Revision 1.0 - 2016-04-12 BGS13S4N9 Confidential Table 3: Maximum Ratings, Table II at TA = 25 ◦C, unless otherwise specified Parameter Symbol Maximum DC-voltage on RF- VRFDC Values Min. Typ. Max. 0 – 0 Unit Note / Test Condition V No DC voltages allowed on Ports and RF-Ground RF-Ports 4 Operation Ranges Table 4: Operation Ranges Parameter Symbol Values Unit Note / Test Condition 3.3 V – 80 150 µA – 1.35 – VDD V – VCtrl_L -0.3 – 0.43 V – CCtrl – – 2 pF – TA -40 25 85 ◦ – Min. Typ. Max. VDD 1.8 – Supply current IDD – GPIO control voltage high VCtrl_H GPIO control voltage low GPIO control input capaci- Supply voltage 1) tance Ambient temperature 1) T C ◦ ◦ A = −40 C - 85 C, VDD= 1.8 - 3.3 V Table 5: RF Input Power Parameter Rx ports (50 Ω) Data Sheet Symbol PRF_Rx Values Min. Typ. Max. – – 30 7 Unit Note / Test Condition dBm – Revision 1.0 - 2016-04-12 BGS13S4N9 Confidential 5 RF Characteristics Table 6: RF Characteristics at TA = −40 ◦C–85 ◦C, PIN = 0 dBm, Supply Voltage VDD= 1.8 V–3.3 V, Z0 = 50 Ohm, unless otherwise specified Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. 0.10 0.20 0.25 dB 824–915 MHz 0.20 0.30 0.40 dB 1710–1910 MHz 0.25 0.40 0.60 dB 2170–2500 MHz 0.40 0.55 0.65 dB 2700MHz 0.15 0.20 0.25 dB 824–915 MHz 0.25 0.30 0.35 dB 1710–1910 MHz 0.35 0.40 0.50 dB 2170–2500 MHz 0.50 0.55 0.65 dB 2700MHz 28 31 33 dB 824–915 MHz 18 20 24 dB 1710–1910 MHz 15 18 20 dB 2170–2500 MHz 13 14 16 dB 2700MHz 31 33 – dB 824–915 MHz 23 27 – dB 1710–1910 MHz 17 22 – dB 2170–2500 MHz 16 21 – dB 2700MHz 32 34 – dB 824–915 MHz 21 25 – dB 1710–1910 MHz 17 23 – dB 2170–2500 MHz 15 19 – dB 2700MHz Insertion Loss All Rx Ports IL 1) Insertion Loss All Rx Ports IL Return Loss All Rx Ports RL 1) Isolation RFin to RF1/RF2/RF32) ISOIn-RFx RF1 to RF2 / RF2 to RF13) RF1 to RF3 / RF3 to RF14) RF2 to RF3 / RF3 to RF25) 1) T ISOport-port ◦ A = 25 C, VDD = 3V 2) Any RF Port ON ON 4) RF3 ON 5) RF2 ON 3) RF1 Data Sheet 8 Revision 1.0 - 2016-04-12 BGS13S4N9 Confidential Table 7: RF Characteristics at TA = −40 ◦C–85 ◦C, PIN = 0 dBm, Supply Voltage VDD= 1.8 V–3.3 V, Z0 = 50 Ohm, unless otherwise specified Parameter Symbol Values Unit Note / Test Condition – dBm 698–960 MHz Min. Typ. Max. 34 – P0.1 dB Compression Point, Extrapolated All Rx Ports P0.1dB Harmonic Generation up to 12.75 GHz H2 PHarm – -80 -70 dBc 27 dBm, 50 Ω, CW mode H3 PHarm – -80 -70 dBc 27 dBm, 50 Ω, CW mode Intermodulation Distortion in Rx Band1) (TA = 25 ◦C) IMD2 IMD2 – -110 -100 dBm Tx = 10 dBm, IMD3 IMD3 – -115 -100 dBm Interferer = −15 dBm, 50 Ω RF Rise Time ton/off – 0.085 – µs Ctrl to RF Time tCtrl-RF – 0.55 – µs Switching Time 1) With 10 % to 90 % RF ON; 90 % to 10 % RF OFF 50 % of Ctrl Signal to 90 % of RF Signal external shunt inductor Data Sheet 9 Revision 1.0 - 2016-04-12 BGS13S4N9 Confidential 6 GPIO Specification Table 8: Modes of Operation Truth Table Control Inputs State Mode V1 V2 RF1 RF2 RF3 1 Isolation 0 0 off off off 2 RFin - RF1 1 0 on off off 3 RFin - RF2 0 1 off on off 4 RFin - RF3 1 1 off off on 7 Pin Definition and Package Outline Table 9: Pin Configuration No Name 1 V1 2 RF3 3 RF1 4 RFin 5 RF2 6 DGND 7 VDD 8 V2 9 GND Pin Type I I/O I/O I/O I/O GND PWR I GND Buffer Type Function Control Pin 1 RF-Port3 RF-Port1 RF-Input RF-Port2 Digital Ground Power Supply Control Pin 2 Ground 1 V1 8 V2 7 VDD 2 RF3 9 GND 6 DGND 3 RF1 4 RFin 5 RF2 Figure 2: Pin out (top view) Data Sheet 10 Revision 1.0 - 2016-04-12 BGS13S4N9 Confidential Table 10: Mechanical Data Parameter Symbol Value Unit X-Dimension X 1.1 ± 0.05 mm Y-Dimension Y 1.1 ± 0.05 mm Size Size 1.21 mm2 Height H 0.375 ± 0.025 mm 0.4 mm Pad-Pitch Figure 3: Package Outline (bottom and side view) 0.4 0.4 0.25 0.4 0.4 0.4 0.25 Optionalksolderkmaskkdam Copper Stencilkapertures Solderkmask TSNP-9-3-FPkV01 Figure 4: Land pattern and stencil mask Data Sheet 11 Revision 1.0 - 2016-04-12 BGS13S4N9 Confidential Figure 5: Marking Pattern Table 11: Year date code marking - digit "Y" Year "Y" Year "Y" Year "Y" 2000 0 2010 0 2020 0 2001 1 2011 1 2021 1 2002 2 2012 2 2022 2 2003 2004 3 4 2013 2014 3 4 2023 2024 3 4 2005 5 2015 5 2025 5 2006 6 2016 6 2026 6 2007 7 2017 7 2027 7 2008 8 2018 8 2028 8 2009 9 2019 9 2029 9 Table 12: Week date code marking - digit "W" Data Sheet Week "W" Week "W" Week "W" Week "W" Week "W" 1 A 12 N 23 4 34 h 45 v 2 B 13 P 24 5 35 j 46 x 3 C 14 Q 25 6 36 k 47 y 4 D 15 R 26 7 37 l 48 z 5 E 16 S 27 a 38 n 49 8 6 F 17 T 28 b 39 p 50 9 7 G 18 U 29 c 40 q 51 2 8 H 19 V 30 d 41 r 52 3 9 J 20 W 31 e 42 s 10 11 K L 21 22 Y Z 32 33 f g 43 44 t u 12 Revision 1.0 - 2016-04-12 BGS13S4N9 Confidential 1.25 Pin 1 marking 8 0.5 2 1.25 TSNP-9-3-TP V01 Figure 6: Tape and Reel (Reel φ 180 mm: 15.000 Pieces/Reel) Data Sheet 13 Revision 1.0 - 2016-04-12 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG