BGS14MA11
B G S 1 4 M A 11
M I P I 2 . 0 S P 4 T s w i tc h f o r LT E d i v e r s i t y, Tx a n d L A A a p p l i c at i o n s
Key Features
•
•
•
•
•
•
•
0.1 to 6.0 GHz coverage for LTE and LAA application
LTE TX power handling capabilities
Ultra low insertion loss: 0.3dB for band 41 and 0.85dB for LTE U/ LAA
Small form factor 1.15mm x 1.55mm
Fully compatible with MIPI 2.0 RFFE standard
Select pin for USID allows two devices per MIPI RFFE bus
No decoupling capacitors required (Unless DC applied on RF lines)
Applications
The SP4T switch is a band selection switch for LTE applications. With LTE TX power handling capability it’s suitable for
both LTE diversity path and LTE uplink Tx applications. The switch covers up to 6GHz so it supports Band 42, Band 43 and
also LAA.
Product Validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Block diagram
RF1
RF2
ANT
RF3
RF4
SP4T
VIO
VDD
GND
MIPI
Interface
SCLK
SDATA
USID_SELECT
Data Sheet
www.infineon.com
Revision 2.1
2018-07-17
BGS14MA11
MIPI 2.0 SP4T switch for LTE diversity, Tx and LAA applications
Table of Contents
Table of Contents
Table of Contents
1
1
2
Features
2 Maximum Ratings
3
3 Operation range
4
4 RF Characteristics
5
5 MIPI RFFE Specification
7
6 Package related information
Data Sheet
12
1
Revision 2.1
2018-07-17
BGS14MA11
MIPI 2.0 SP4T switch for LTE diversity, Tx and LAA applications
Features
1 Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Ultra low insertion loss 0.3dB for band 41 and 0.85dB for LTE U/ LAA
LTE TX Power Handling Capabilities
0.1 to 6.0 GHz coverage for LTE and LAA application
Low harmonic generation
High port-to-port-isolation
Suitable for C2K / LTE / WCDMA Applications
On chip control logic including ESD protection
Fully compatible with MIPI 2.0 RFFE standard
Software programmable MIPI RFFE USID
USID swap feature
Small form factor 1.15mm x 1.55mm
No power supply blocking required
Select pin for USID allows two devices per MIPI RFFE bus
No decoupling capacitors required (Unless DC applied on RF lines)
High EMI robustness
RoHS and WEEE compliant package
Description
This SP4T RF switch is a perfect solution for multimode handsets based on LTE and WCDMA. It is based on Infineon’s proprietary
technology and has excellent RF performance. The ultra-low insertion loss helps customers to achieve high system sensitivity,
the coverage of LTE Tx power and 6GHz enables very broad application. It features DC-free RF ports, external DC blocking
capacitors at the RF ports are only required if DC voltage is applied externally. Its on chip MIPI RFFE 2.0 controller is fully
compatible with industry standard, with external USID_SEL pin it can support two devices per MIPI RFFE bus.
Product Name
Marking
Package
BGS14MA11
A1
ATSLP-11
Data Sheet
2
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BGS14MA11
MIPI 2.0 SP4T switch for LTE diversity, Tx and LAA applications
Maximum Ratings
2 Maximum Ratings
Table 1: Maximum Ratings, Table I at TA = 25 ◦C, unless otherwise specified
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Frequency Range
f
0.1
–
6.0
GHz
1)
Supply voltage 2)
VDD
-0.5
–
3.6
V
–
-55
–
150
◦
Storage temperature range
TSTG
RF input power at all TRx ports
C
–
PRF _max
–
–
35
dBm
ESD capability, CDM
3)
VESDCDM
-500
–
+500
V
ESD capability, HBM
4)
VESDHBM
-1
–
+1
kV
VESDANT
-8
–
+8
kV
Tj
–
–
125
◦
ESD capability, system level (RF port) 5)
short momentary / 50Ω
ANT vs system GND, with 27 nH
shunt inductor
Junction temperature
C
–
Switch has a low-pass response. For higher frequencies, losses have to be considered for their impact on thermal heating. The DC voltage at RF ports VRFDC has
to be 0V.
2) Note: Consider potential ripple voltages on top of V . Including RF ripple, V
DD
DD must not exceed the maximum ratings: VDD = VDC + VRipple .
3) Field-Induced Charged-Device Model ANSI/ESDA/JEDEC JS-002. Simulates charging/discharging events that occur in production equipment and processes.
Potential for CDM ESD events occurs whenever there is metal-to-metal contact in manufacturing.
4) Human Body Model ANSI/ESDA/JEDEC JS-001 (R = 1,5 kΩ, C = 100 pF).
5) IEC 61000-4-2 (R = 330 Ω, C = 150 pF), contact discharge.
1)
Warning: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute
ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit.
Table 2: Maximum Ratings, Table II at TA = 25 ◦C, unless otherwise specified
Parameter
Thermal resistance junction - soldering
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
RthJS
–
–
62
K/W
–
VRFDC
0
–
0
V
No DC voltages allowed on RF-
point
Maximum DC-voltage on RF-Ports and
RF-Ground
Data Sheet
Ports
3
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BGS14MA11
MIPI 2.0 SP4T switch for LTE diversity, Tx and LAA applications
Operation range
3 Operation range
Table 3: Operation range at T A = −40 ◦C to 85 ◦C
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note / Test Condition
Supply Voltage
V DD
1.7
1.8
3.4
V
–
Supply Current
IDD
–
60
125
µA
–
Supply Current in Standby mode
IDD_SB
–
0.5
1
µA
VIO=low or MIPI lowpower
mode
RFFE supply voltage
VIO
1.65
1.8
1.95
V
–
RFFE input high voltage1
VIH
0.7*VIO
–
VIO
V
–
VIL
0
–
0.3*VIO
V
–
RFFE output high voltage
VOH
0.8*VIO
–
VIO
V
–
1
RFFE output low voltage
VOL
0
–
0.2*VIO
V
–
RFFE control input capacitance
CCtrl
–
–
2
pF
–
RFFE supply current
IVIO
–
2
–
µA
Idle State
Unit
Note / Test Condition
RFFE input low voltage
1
1
1 SCLK and SDATA
Table 4: RF input power
Parameter
Symbol
Values
Min.
Typ.
Max.
RF input power on TRX ports
PRF
–
–
34
dBm
CW / VSWR 1:1 / 25 ◦C
RF input power on TRX ports
PRF
–
–
29
dBm
CW / VSWR 6:1 / 85 ◦C
Data Sheet
4
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BGS14MA11
MIPI 2.0 SP4T switch for LTE diversity, Tx and LAA applications
RF Characteristics
4 RF Characteristics
Table 5: RF Characteristics at TA = −40 ◦C...85 ◦C, PIN = 0 dBm, Supply Voltage VDD= 1.7...3.4V, unless otherwise specified. Open
ports are terminated with 50 Ω.
Parameter
Symbol
Insertion Loss
Note / Test Condition
Min.
Typ.
Max.
–
0.20
0.40
dB
698–960 MHz
–
0.23
0.45
dB
1428–1920 MHz
IL
–
–
0.25
0.26
0.45
0.50
dB
dB
1990–2170 MHz
2170–2690 MHz
–
0.40
0.60
dB
3400–3600 MHz
–
0.42
0.70
dB
3600–3800 MHz
–
0.85
1.50
dB
5000–6000 MHz
23
27
–
dB
698–960 MHz
19
21
–
dB
1428–1920 MHz
18
20
–
dB
1990–2170 MHz
17
19
–
dB
2170–2690 MHz
14
16
–
dB
3400–3600 MHz
14
15
–
dB
3600–3800 MHz
10
11
–
dB
5000–6000 MHz
36
40
–
dB
698–960 MHz
30
35
–
dB
1428–1920 MHz
28
32
–
dB
1990–2170 MHz
26
28
–
dB
2170–2690 MHz
22
26
–
dB
3400–3600 MHz
21
25
–
dB
3600–3800 MHz
14
18
–
dB
5000–6000 MHz
1)
All TRx Ports
Isolation
Unit
1)
All TRx Ports
Return Loss
Values
RL
1) 2)
All TRx Ports
ISO
Harmonic Generation (UMTS Band 1, Band 5)
1)
2nd harmonic generation
PH2
–
-72
-66
dBm
25 dBm, 50 Ω, CW mode
3 harmonic generation
PH3
–
-74
-71
dBm
25 dBm, 50 Ω, CW mode
rd
Intermodulation Distortion (UMTS Band 1, Band 5)1)
2nd order intermodulation
IMD2 low
–
–
-110
dBm
IMT, US Cell (see Tab. 7)
3 order intermodulation
IMD3
–
–
-110
dBm
IMT, US Cell (see Tab. 8)
2
IMD2 high
–
–
-110
dBm
IMT, US Cell (see Tab. 7)
rd
nd
order intermodulation
1) On application board without any matching components.
2) Isolation to inactive ports when one path is active (port to port isolation).
Data Sheet
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BGS14MA11
MIPI 2.0 SP4T switch for LTE diversity, Tx and LAA applications
RF Characteristics
Table 6: Switching Time at TA = 25 ◦C, PIN = 0 dBm, Supply Voltage VDD= 1.7...3.4V, unless otherwise specified
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note / Test Condition
10 % to 90 % RF signal
Switching Time
RF Rise Time
tRT
–
–
2
µs
Switching Time
tST
–
3
4.5
µs
Power Up Settling Time
tPup
–
10
25
µs
50% last SCLK falling edge to
90% RF signal, see Fig. 1
After power down mode
1) Don’t change switch state during first 10µs of power-up.
SDATA
TINT
SCLK
90%
RF Signal
Figure 1: MIPI to RF time
Table 7: IMD2 Testcases
Band
CW tone 1 (MHz)
CW tone 1 (dBm)
CW tone 2 (MHz)
IMT
1950
15
US Cell
835
15
Band
CW tone 1 (MHz)
CW tone 1 (dBm)
CW tone 2 (MHz)
CW tone 2 (dBm)
IMT
1950
20
1760
-15
US Cell
835
20
790
-15
190 (IMD2 low)
4090 (IMD2 high)
45 (IMD2 low)
1715 (IMD2 high)
CW tone 2 (dBm)
-15
-15
Table 8: IMD3 Testcases
Data Sheet
6
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BGS14MA11
MIPI 2.0 SP4T switch for LTE diversity, Tx and LAA applications
MIPI RFFE Specification
5 MIPI RFFE Specification
All sequences are implemented according to the ’MIPI Alliance Specification for RF Front-End Control Interface’ document
version 2.0 - 25. September 2014.
Table 9: MIPI Features
Feature
Supported
MIPI RFFE 1.10 and 2.0 standards
Yes
Register 0 write command sequence
Yes
Register read and write command sequence
Yes
Extended register read and write command se-
Yes
Comment
quence
Support for standard frequency range operations
Yes
Up to 26 MHz for read and write
Yes
Up to 52 MHz for write1)
for SCLK
Support for extended frequency range operations
for SCLK
Half speed read
Yes
Full speed read
Yes
Full speed write
Yes
Programmable Group SID
Yes
Trigger functionality
Yes
Broadcast / GSID write to PM TRIG register
Yes
Reset
Yes
Status / error sum register
Yes
Extended product ID register
Yes
Revision ID register
Yes
Group SID register
Yes
USID select pin
Yes
1)
Via VIO, PM TRIG or software register1)
External pin to provide 2 USIDs. See Tab. 10
only supported by MIPI 2.0 Standard
Data Sheet
7
Revision 2.1
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BGS14MA11
MIPI 2.0 SP4T switch for LTE diversity, Tx and LAA applications
MIPI RFFE Specification
Table 10: MIPI USID Selection
Selection Pin Level 1)
Default Connection
USID_SEL= GND
USID= 0xD
USID_SEL= VIO
USID= 0x1
1) No unspecified voltage levels including floating are allowed.
Table 11: Startup Behavior
Feature
State
Power status
Power
Comment
down
Power down mode after start-up
mode
Trigger function
Data Sheet
Enabled
Enabled after start-up. Programmable via behavior control register
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BGS14MA11
MIPI 2.0 SP4T switch for LTE diversity, Tx and LAA applications
MIPI RFFE Specification
Table 12: Register Mapping, Table I
Register
Address
Register Name
Data
Bits
Function
Description
0x00
SW_CTRL0
6:0
SW_CTRL0
RF Switch Control
0x1C
PM_TRIG
PWR_MODE(1), Operation Mode
0: Normal operation (ACTIVE)
7
Default
Broadcast_ID
Support
Trigger
Support
R/W
0
No
Yes
R/W
1
Yes
No
R/W
1: Low Power Mode (LOW POWER)
6
PWR_MODE(0), State Bit Vector
0: No action (ACTIVE)
0
1: Powered Reset (STARTUP to ACTIVE
to LOW POWER)
5
TRIGGER_MASK_2
0: Data masked (held in shadow REG)
0
No
1: Data not masked (ready for transfer to
active REG)
4
TRIGGER_MASK_1
0: Data masked (held in shadow REG)
0
1: Data not masked (ready for transfer to
active REG)
3
TRIGGER_MASK_0
0: Data masked (held in shadow REG)
0
1: Data not masked (ready for transfer to
active REG)
2
TRIGGER_2
0: No action (data held in shadow REG)
0
Yes
1: Data transferred to active REG
1
TRIGGER_1
0: No action (data held in shadow REG)
0
1: Data transferred to active REG
0
TRIGGER_0
0: No action (data held in shadow REG)
0
1: Data transferred to active REG
0x1D
PRODUCT_ID
7:0
PRODUCT_ID
This is a read-only register. However,
during the programming of the USID a
write command sequence is performed
on this register, even though the write
does not change its value.
33
No
No
R
0x1E
MAN_ID
7:0
MANUFACTURER_ID [7:0]
This is a read-only register. However,
during the programming of the USID, a
write command sequence is performed
on this register, even though the write
does not change its value.
0x1A
No
No
R
0x1F
MAN_USID
7:6
RESERVED
Reserved for future use
00
No
No
R
5:4
MANUFACTURER_ID [9:8]
These bits are read-only. However, during the programming of the USID, a
write command sequence is performed
on this register even though the write
does not change its value.
01
3:0
USID[3:0]
Programmable USID. Performing a
write to this register using the described programming sequences will
program the USID in devices supporting this feature. These bits store the
USID of the device.
See
Tab. 10
No
No
R/W
Data Sheet
9
Revision 2.1
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BGS14MA11
MIPI 2.0 SP4T switch for LTE diversity, Tx and LAA applications
MIPI RFFE Specification
Table 13: Register Mapping, Table II
Register
Address
Register Name
Data
Bits
Function
0x20
EXT_PROD_ID1)
7:0
EXT_PRODUCT_ID
0x21
REV_ID
7:4
MAIN_REVISION
3:0
SUB_REVISION
0x22
GSID1)
7:4
GSID0[3:0]
Primary Group Slave ID.
0x0
3:0
RESERVED
Reserved for secondary Group Slave ID.
0x0
7
UDR_RST
Reset all configurable non-RFFE Reserved registers to default values.
0: Normal operation
1: Software reset
0
6:0
RESERVED
Reserved for future use
0000000
7
RESERVED
Reserved for future use
0
6
COMMAND_FRAME_PAR_ERR
Command Sequence received with parity error − discard command.
0
0x23
UDR_RST
0x24
ERR_SUM1)
Description
Default
Broadcast_ID
Support
Trigger
Support
R/W
0x00
No
No
R
0x4
No
No
R/W
No
No
R/W
No
No
R/W
No
No
R
0x0
5
COMMAND_LENGTH_ERR
Command length error.
0
4
ADDRESS_FRAME_ PAR_ERR
Address frame with parity error.
0
3
DATA_FRAME_PAR_ERR
Data frame with parity error.
0
2
READ_UNUSED_REG
Read command to an invalid address.
0
1
WRITE_UNUSED_REG
Write command to an invalid address.
0
0
BID_GID_ERR
Read command with a BROADCAST_ID
or GROUP_ID.
0
1) Only supported by MIPI 2.0 Standard
Data Sheet
10
Revision 2.1
2018-07-17
BGS14MA11
MIPI 2.0 SP4T switch for LTE diversity, Tx and LAA applications
MIPI RFFE Specification
Table 14: Modes of Operation (Truth Table, Register_0)
State
Value (Bin.)
Mode
1
00000000
ALL OFF (Isolation)
2
00000001
RF1 ON
3
00000010
RF2 ON
4
00000100
RF3 ON
5
00001000
RF4 ON
6
00000011
RF1 and RF2 ON
7
00000101
RF1 and RF3 ON
8
00001001
RF1 and RF4 ON
9
00000110
RF2 and RF3 ON
10
00001010
RF2 and RF4 ON
11
00001100
RF3 and RF4 ON
12
00000111
RF1 and RF2 and RF3 ON
RF1 and RF2 and RF4 ON
13
00001011
14
00001101
RF1 and RF3 and RF4 ON
15
00001110
RF2 and RF3 and RF4 ON
16
00001111
RF1 and RF2 and RF3 and RF4 ON
17
00XX0000
ALL OFF (Isolation)
1) Reserved
Data Sheet
11
Revision 2.1
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BGS14MA11
MIPI 2.0 SP4T switch for LTE diversity, Tx and LAA applications
Package related information
6 Package related information
The switch has a package size of 1150 µm in x-dimension and 1550 µm in y-dimension with a maximum deviation of ±50 µm in
each dimension. Fig. 2 shows the footprint from top view. The definition of each pin can be found in Tab. 16.
Table 15: Mechanical Data
Parameter
Symbol
Value
Unit
Package X-Dimension
X
1150 ± 50
µm
Package Y-Dimension
Y
1550 ± 50
µm
Package Height
H
0.65 max
µm
ANT
RF2
6
RF1
7
5
4 RF3
3 RF4
VDD
8
11
GND
USID_SEL
9
10
2
VIO
1
SCLK
SDATA
Figure 2: Footprint, top view
Table 16: Pin Definition
No.
Name
Pin Type
Function
1
SCLK
I/O
MIPI RFFE Clock (Input)
2
VIO
Power
MIPI RFFE Power Supply
3
RF4
RF
Rx port 4
4
RF3
RF
Rx port 3
5
ANT
RF
RF Input port
6
RF2
RF
Rx port 2
7
RF1
RF
Rx port 1
8
VDD
Power
Power supply
9
USID-SEL
I/O
User ID selection pin
10
SDATA
I/O
MIPI RFFE Data
11
GND
Ground
Ground
Data Sheet
12
Revision 2.1
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BGS14MA11
MIPI 2.0 SP4T switch for LTE diversity, Tx and LAA applications
Package related information
Figure 3: Package Outline Drawing (top, side and bottom views)
Optional solder mask dam
0.25
0.25
0.4
0.4
0.2
0.2
0.25
0.25
0.4
copper
0.4
solder mask
stencil apertures
ALL DIMENSIONS ARE IN UNITS MM
Figure 4: Land Pattern Drawing
Data Sheet
13
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BGS14MA11
MIPI 2.0 SP4T switch for LTE diversity, Tx and LAA applications
Package related information
TYPE CODE
PIN1 MARKING
(LASERED)
DATE CODE
(YW)
Figure 5: Laser marking
4
0.75
4
1.7
8
PIN 1
INDEX MARKING
1.3
ALL DIMENSIONS ARE IN UNITS MM
THE DRAWING IS IN COMPLIANCE WITH ISO 128 & PROJECTION METHOD 1 [
]
Figure 6: Carrier Tape
Data Sheet
14
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BGS14MA11
MIPI 2.0 SP4T switch for LTE diversity, Tx and LAA applications
Package related information
Table 17: Year date code marking - digit "Y"
Year
"Y"
Year
"Y"
Year
"Y"
2000
0
2010
0
2020
0
2001
1
2011
1
2021
1
2002
2
2012
2
2022
2
2003
3
2013
3
2023
3
2004
4
2014
4
2024
4
2005
5
2015
5
2025
5
2006
6
2016
6
2026
6
2007
7
2017
7
2027
7
2008
8
2018
8
2028
8
2009
9
2019
9
2029
9
Table 18: Week date code marking - digit "W"
Data Sheet
Week
"W"
Week
"W"
Week
"W"
Week
"W"
Week
"W"
1
A
12
N
23
4
34
h
45
v
2
B
13
P
24
5
35
j
46
x
3
C
14
Q
25
6
36
k
47
y
4
D
15
R
26
7
37
l
48
z
5
E
16
S
27
a
38
n
49
8
6
F
17
T
28
b
39
p
50
9
7
G
18
U
29
c
40
q
51
2
8
H
19
V
30
d
41
r
52
3
9
J
20
W
31
e
42
s
10
K
21
Y
32
f
43
t
11
L
22
Z
33
g
44
u
15
Revision 2.1
2018-07-17
Revision History
Page or Item
Subjects (major changes since previous revision)
Revision 2.1, 2018-07-17
1
´NDA Required´ removed
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Edition 2018-07-17
Published by
Infineon Technologies AG
81726 Munich, Germany
c 2018 Infineon Technologies AG.
All Rights Reserved.
Do you have a question about any
aspect of this document?
Email: erratum@infineon.com
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be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples, hints or any typical values stated herein and/or
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