BGS14PN10
SP4T high linearity, high power RF Switch
Data Sheet
Revision 1.3 - 2016-08-24
Power Management & Multimarket
Edition 2016-08-24
Published by
Infineon Technologies AG
81726 Munich, Germany
c
2012
Infineon Technologies AG
All Rights Reserved.
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With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding
the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
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For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
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BGS14PN10
Confidential
Revision History
Document No.: BGS14PN10.pdf
Revision History: 1.3
Previous Version: 1.2
Page
Subjects (major changes since last revision)
1
Updated title
Trademarks of Infineon Technologies AG
AURIXTM , C166TM , CanPAKTM , CIPOSTM , CIPURSETM ,CoolGaNTM ,CoolMOSTM , CoolSETTM , CoolSiCTM , CORECONTROLTM ,
DAVETM , DI-POLTM ,EasyPIMTM , EconoBRIDGETM , EconoDUALTM , EconoPACKTM , EconoPIMTM , EiceDRIVERTM , eupecTM ,
FCOSTM , HITFETTM , HybridPACKTM , ISOFACETM , I2 RFTM , IsoPACKTM , MIPAQTM , ModSTACKTM , my-dTM , NovalithICTM ,
OmniTuneTM , OptiMOSTM , ORIGATM , OPTIGATM , PROFETTM , PRO-SILTM , PRIMARIONTM , PrimePACKTM , RASICTM ,
ReverSaveTM , SatRICTM , SIEGETTM , SIPMOSTM , SOLID FLASHTM , SmartLEWISTM , TEMPFETTM , thinQ!TM , TriCoreTM ,
TRENCHSTOPTM .
Other Trademarks
Advance Design SystemTM (ADS) of Agilent Technologies, AMBATM , ARMTM , MULTI-ICETM , PRIMECELLTM , REALVIEWTM ,
THUMBTM of ARM Limited, UK. AUTOSARTM is licensed by AUTOSAR development partnership. BluetoothTM of Bluetooth
SIG Inc. CAT-iqTM of DECT Forum. COLOSSUSTM , FirstGPSTM of Trimble Navigation Ltd. EMVTM of EMVCo, LLC (Visa
Holdings Inc.). EPCOSTM of Epcos AG. FLEXGOTM of Microsoft Corporation. FlexRayTM is licensed by FlexRay Consortium.
HYPERTERMINALTM of Hilgraeve Incorporated. IECTM of Commission Electrotechnique Internationale. IrDATM of Infrared Data
Association Corporation. ISOTM of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLABTM of MathWorks,
Inc. MAXIMTM of Maxim Integrated Products, Inc. MICROTECTM , NUCLEUSTM of Mentor Graphics Corporation. MifareTM of
NXP. MIPITM of MIPI Alliance, Inc. MIPSTM of MIPS Technologies, Inc., USA. muRataTM of MURATA MANUFACTURING CO.,
MICROWAVE OFFICETM (MWO) of Applied Wave Research Inc., OmniVisionTM of OmniVision Technologies, Inc. OpenwaveTM
Openwave Systems Inc. RED HATTM Red Hat, Inc. RFMDTM RF Micro Devices, Inc. SIRIUSTM of Sirius Sattelite Radio Inc.
SOLARISTM of Sun Microsystems, Inc. SPANSIONTM of Spansion LLC Ltd. SymbianTM of Symbian Software Limited. TAIYO
YUDENTM of Taiyo Yuden Co. TEAKLITETM of CEVA, Inc. TEKTRONIXTM of Tektronix Inc. TOKOTM of TOKO KABUSHIKI
KAISHA TA. UNIXTM of X/Open Company Limited. VERILOGTM , PALLADIUMTM of Cadence Design Systems, Inc. VLYNQTM of
Texas Instruments Incorporated. VXWORKSTM , WIND RIVERTM of WIND RIVER SYSTEMS, INC. ZETEXTM of Diodes Zetex
Limited.
Last Trademarks Update 2012-12-13
Data Sheet
3
Revision 1.3 - 2016-08-24
BGS14PN10
Confidential
Contents
Contents
1 Features
5
2 Product Description
6
3 Maximum Ratings
7
4 Operation Ranges
8
5 Logic Table
8
6 RF Characteristics for RF1 and RF3
9
7 RF Characteristics for RF2 and RF4
10
8 RF large signal parameter
11
9 Package Outline and Pin Configuration
13
List of Figures
1
2
3
4
5
6
BGS14PN10 block diagram . .
Pinout (top view) . . . . . . . .
Package Dimensions Drawing .
Land pattern and stencil mask
Marking . . . . . . . . . . . . .
Tape drawing . . . . . . . . . .
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List of Tables
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Ordering Information . . . . .
Maximum Ratings, Table I . .
Maximum Ratings, Table II . .
Operation Ranges . . . . . .
Logic Table . . . . . . . . . .
RF Specifications . . . . . . .
RF Specifications . . . . . . .
RF large signal Specifications
RF large signal Specifications
Logic Table . . . . . . . . . .
Logic Table . . . . . . . . . .
Logic Table . . . . . . . . . .
Pin description . . . . . . . .
Mechanical data . . . . . . .
Data Sheet
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4
Revision 1.3 - 2016-08-24
BGS14PN10
Confidential
BGS14PN10 SP4T high linearity, high power RF Switch
1 Features
• High max RF power: 40 dBm CW @ 900 MHz, room temperature
• Two ultra-low loss ports (RF1 and RF3):
0.19 dB @ f=0.9 GHz, PIN =38 dBm
0.29 dB @ f=1.9 GHz, PIN =38 dBm
0.51 dB @ f=2.7 GHz, PIN =33 dBm
1.20 dB @ f=3.8 GHz, PIN =33 dBm
1.90 dB @ f=5.8 GHz, PIN =33 dBm
• Two low loss ports (RF2 and RF4):
0.32 dB @ f=0.9 GHz, PIN =38 dBm
0.40 dB @ f=1.9 GHz, PIN =38 dBm
0.64 dB @ f=2.7 GHz, PIN =33 dBm
1.19 dB @ f=3.8 GHz, PIN =33 dBm
1.78 dB @ f=5.8 GHz, PIN =33 dBm
• No DC decoupling components required, if no external DC is
applied on RF ports
• High ESD robustness
• Low harmonic generation
• High linearity
RF1/RF3 72 dBm IIP3
RF2/RF4 74 dBm IIP3
• No power supply blocking required
• Supply voltage range: 1.8 to 3.6 V
• No insertion loss change within supply voltage range
• No linearity change within supply voltage range
• Suitable for EDGE / C2K / LTE / WCDMA / SV-LTE Applications
• Mobile cellular Rx/Tx applications, suitable for LTE/3G
• Applicable for main path and entire RF-Front-end without any
power restrictions in mobile communication
DL/UL CA and MIMO
Micro/Pico Cells / Cellular base stations
Test equipment
Suitable for SV-LTE
• 0.5 to 6.0 GHz coverage
• Small form factor 1.1 mm x 1.5 mm
• 400 µm pad pitch
• RoHS and WEEE compliant package
Data Sheet
5
Revision 1.3 - 2016-08-24
BGS14PN10
Confidential
2 Product Description
The BGS14PN10 is a Single Pole Quad Throw (SP4T) RF antenna aperture switch optimized for mobile phone
applications up to 6.0 GHz. This single supply chip integrates on-chip CMOS logic driven by a two simple, CMOS
or TTL compatible control input signals. Unlike GaAs technology, the 0.1 dB compression point exceeds the switch
maximum input power level, resulting in linear performance at all signal levels and external DC blocking capacitors
at the RF ports are only required if DC voltage is applied externally.
Table 1: Ordering Information
Type
Package
Marking
Chip
BGS14PN10
TSNP10-1
4P
M4821C
Data Sheet
6
Revision 1.3 - 2016-08-24
BGS14PN10
Confidential
VBATT
RFC
Voltage
Regulator
CTRL1
CTRL2
Driver
Chargepump
GND
RF2 RF3
RF1
RF4
Figure 1: BGS14PN10 block diagram
3 Maximum Ratings
Table 2: Maximum Ratings, Table I at TA = 25 ◦ C, unless otherwise specified
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note / Test Condition
1)
Frequency Range
f
0.5
–
–
GHz
Supply voltage
VDD
-0.5
–
3.6
V
–
◦
–
Storage temperature range
TSTG
-55
–
150
RF input power
PRF _TRx
–
–
40
dBm
C
ESD capability Human Body Model
VESDHBM
-1
–
+1
kV
ESD capability ANT port (according
VESDANT
-8
–
+8
kV
125
◦
IEC 61000-4-2 contact)
Junction temperature
1)
25% duty cycle
On application board with
27nH shunt inductor
Tj
–
–
C
–
Switch has no highpass response. There is also a high ohmic DC to the RF path. The DC voltage at RF ports VRFDC has to be 0V.
Data Sheet
7
Revision 1.3 - 2016-08-24
BGS14PN10
Confidential
Table 3: Maximum Ratings, Table II at TA = 25 ◦ C, unless otherwise specified
Parameter
Symbol
Maximum DC-voltage on RF-Ports
Values
Unit
Note / Test Condition
0
V
No DC voltages allowed on
3.3
V
–
Unit
Note / Test Condition
Min.
Typ.
Max.
VRFDC
0
–
VCTRL
-0.7
–
and RF-Ground
RF-Ports
Control Voltage Levels
4 Operation Ranges
Table 4: Operation Ranges
Parameter
Symbol
Values
Min.
Typ.
Max.
Supply voltage
VDD
1.8
2.85
3.6
V
–
Supply current1)
IDD
–
75
120
µA
–
Control voltage low
VCtrl,low
0
0.45
V
–
Control voltage high
VCtrl,high
1.2
1.8
2.85
V
VCtrl,high VDD
Control current low
ICtrl,low
-1
0
1
µA
–
Control current high
ICtrl,high
-1
0
1
µA
VCtrl,high VDD
◦
C
Ambient temperature
TA
-40
25
85
RF switching time 2)
tsw
1
2
5
µs
–
10
30
µs
–
Startup time
2)
tsw
–
◦
◦
A = -30 C − +85 C, VBATT = 1.8 − 3.6 V
2) , Represents actual alpha status. To be updated.
1) T
5 Logic Table
Table 5: Logic Table
CTRL 1
CTRL 2
Mode
0
0
RF1 connected to ANT
0
1
RF2 connected to ANT
1
0
RF3 connected to ANT
1
1
RF4 connected to ANT
Data Sheet
8
Revision 1.3 - 2016-08-24
BGS14PN10
Confidential
6 RF Characteristics for RF1 and RF3
Table 6: RF Specifications
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
–
0.18
0.26
dB
–
0.29
0.36
dB
–
0.30
0.41
dB
2171 - 2690 MHz
–
0.51
0.68
dB
3400 - 3800 MHz
–
1.20
1.40
dB
5150 - 5850 MHz
–
1.90
2.35
dB
23
30
–
dB
16
19
–
dB
All Ports @ 1981 - 2170 MHz
14
17
–
dB
All Ports @ 2171 - 2690 MHz
All Ports @ 3400 - 3800 MHz
11
7
12
8
–
–
dB
dB
All Ports @ 5150 - 5850 MHz
6
7
–
dB
34
41
–
dB
27
32
–
dB
Note / Test Condition
Insertion Loss
698 - 960 MHz
1710 - 1980 MHz
1981 - 2170 MHz
IL
Return Loss
All Ports @ 698 - 915 MHz
All Ports @ 1710 - 1980 MHz
RL
VDD = 1.8 − 3.6 V ,
TA = -30 ... +85 ◦ C,
Z0 = 50 Ω,
PIN up to 38 dBm
Isolation RFC
698 - 915 MHz
1710 - 1980 MHz
1981 - 2170 MHz
ISO
26
30
–
dB
2171 - 2690 MHz
24
28
–
dB
3400 - 3800 MHz
20
24
–
dB
5150 - 5850 MHz
15
18
–
dB
43
50
–
dB
34
38
–
dB
Isolation RF1,2,3,4 - RF4,3,2,1
698 - 915 MHz
1710 - 1980 MHz
1981 - 2170 MHz
ISO
33
36
–
dB
2170 - 2690 MHz
30
33
–
dB
3400 - 3800 MHz
24
28
–
dB
5150 - 5850 MHz
18
21
–
dB
Data Sheet
9
Revision 1.3 - 2016-08-24
BGS14PN10
Confidential
7 RF Characteristics for RF2 and RF4
Table 7: RF Specifications
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
–
0.30
0.40
dB
–
0.40
0.50
dB
–
0.41
0.54
dB
2171 - 2690 MHz
–
0.64
0.80
dB
3400 - 3800 MHz
–
1.19
1.45
dB
5150 - 5850 MHz
–
1.78
2.09
dB
23
27
–
dB
17
20
–
dB
All Ports @ 1981 - 2170 MHz
14
18
–
dB
All Ports @ 2171 - 2690 MHz
All Ports @ 3400 - 3800 MHz
11
7
15
9
–
–
dB
dB
All Ports @ 5150 - 5850 MHz
6
8
–
dB
34
41
–
dB
27
32
–
dB
Note / Test Condition
Insertion Loss
698 - 960 MHz
1710 - 1980 MHz
1981 - 2170 MHz
IL
Return Loss
All Ports @ 698 - 915 MHz
All Ports @ 1710 - 1980 MHz
RL
VDD = 1.8 − 3.6 V ,
TA = -30 ... +85 ◦ C,
Z0 = 50 Ω,
PIN up to 38 dBm
Isolation RFC
698 - 915 MHz
1710 - 1980 MHz
1981 - 2170 MHz
ISO
26
30
–
dB
2171 - 2690 MHz
24
28
–
dB
3400 - 3800 MHz
20
24
–
dB
5150 - 5850 MHz
14
18
–
dB
43
50
–
dB
34
38
–
dB
Isolation RF1,2,3 - RF3,2,1
698 - 915 MHz
1710 - 1980 MHz
1981 - 2170 MHz
ISO
33
36
–
dB
2170 - 2690 MHz
30
33
–
dB
3400 - 3800 MHz
24
28
–
dB
5150 - 5850 MHz
18
21
–
dB
Data Sheet
10
Revision 1.3 - 2016-08-24
BGS14PN10
Confidential
8 RF large signal parameter
Table 8: RF large signal specifications for RF1 and RF3
Parameter
Symbol
Max. RF input power
–
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
–
–
38
dBm
for typical Hx behavior
Harmonic Generation up to 12.75 GHz(1,2,3)
Second Order Harmonics
PH2
–
-100
–
dBc
25 dBm, 50Ω, CW mode
Third Order Harmonics
PH3
–
-115
–
dBc
25 dBm, 50Ω, CW mode
All RF Ports
PHx
–
-100
–
dBc
25 dBm, 50Ω, CW mode
Intermodulation Distortion IMD2
(1,2,3)
IIP2, low
IIP2,l
–
110
–
dBm
IIP2, high
IIP2,h
–
125
–
dBm
IIP3
–
72
–
dBm
IIP3 conditions table 9
IIP3,SV
–
73
–
dBm
SV-LTE conditions table 10
IIP2 conditions table 8
Intermodulation Distortion IMD3 (1,2,3)
IIP3
SV LTE Intermodulation
(1,2,3)
IIP3,SVLTE
1)
Terminating Port Impedance: Z0 = 50 Ω
2)
Supply Voltage: VDD = 1.8 − 3.6 V
3)
On application board without any matching
components
Table 9: RF large signal specifications for RF2 and RF4
Parameter
Symbol
Max. RF input power
–
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
–
–
38
dBm
for typical Hx behavior
Harmonic Generation up to 12.75 GHz(1,2,3)
Second Order Harmonics
PH2
–
-105
–
dBc
25 dBm, 50Ω, CW mode
Third Order Harmonics
PH3
–
-105
–
dBc
25 dBm, 50Ω, CW mode
All RF Ports
PHx
–
-105
–
dBc
25 dBm, 50Ω, CW mode
Intermodulation Distortion IMD2 (1,2,3)
IIP2, low
IIP2,l
–
110
–
dBm
IIP2, high
IIP2,h
–
130
–
dBm
IIP3
–
74
–
dBm
IIP3 conditions table 9
IIP3,SV
–
74
–
dBm
SV-LTE conditions table 10
IIP2 conditions table 8
Intermodulation Distortion IMD3 (1,2,3)
IIP3
SV LTE Intermodulation
IIP3,SVLTE
1)
(1,2,3)
Terminating Port Impedance: Z0 = 50 Ω
2)
Supply Voltage: VDD = 1.8 − 3.6 V
3)
On application board without any matching
components
Data Sheet
11
Revision 1.3 - 2016-08-24
BGS14PN10
Confidential
Table 10: IIP2 conditions table
Band
In-Band Frequency
Blocker Frequency 1
Blocker Power 1
Blocker Frequency 2
Blocker Power 2
[MHz]
[MHz]
[dBm]
[MHz]
[dBm]
Band 1 Low
2140
1950
20
190
-15
Band 1 High
2140
1950
20
4090
-15
Band 5 Low
881.5
836.5
20
45
-15
Band 5 High
881.5
836.5
20
1718
-15
In-Band Frequency
Blocker Frequency 1
Blocker Power 1
Blocker Frequency 2
Blocker Power 2
Table 11: IIP3 conditions table
Band
[MHz]
[MHz]
[dBm]
[MHz]
[dBm]
Band 1
2140
1950
20
1760
-15
Band 5
881.5
836.5
20
791.5
-15
In-Band Frequency
Blocker Frequency 1
Blocker Power 1
Blocker Frequency 2
Blocker Power 2
Table 12: SV-LTE conditions table
Band
[MHz]
[MHz]
[dBm]
[MHz]
[dBm]
Band 5
872
827
23
872
14
Band 13
747
786
23
747
14
Band 20
878
833
23
2544
14
Data Sheet
12
Revision 1.3 - 2016-08-24
BGS14PN10
Confidential
9 Package Outline and Pin Configuration
ANT
10
RF1 1
9 RF3
GND 2
8 GND
RF2 3
7 RF4
VDD 4
6 CTRL 2
5
CTRL 1
Figure 2: Pinout (top view)
Table 13: Pin Description
Pin No.
Name
Pin
Buffer
Type
Type
Function
1
RF1
I/O
RF1
2
GND
GND
Ground
3
RF2
I/O
RF2
4
VDD
PWR
Supply voltage
5
CTRL 1
I
Control Pin 1
6
CTRL 2
I
Control Pin 2
7
RF4
I/O
RF4
8
GND
GND
Ground
9
RF3
I/O
RF3
10
ANT
I/O
Common RF / Antenna
Table 14: Mechanical Data
Parameter
Symbol
Value
Unit
X-Dimension
X
1.1 ± 0.05
mm
Y-Dimension
Y
1.5 ± 0.05
mm
Size
Size
1.65
mm2
Height
H
0.375
mm
Data Sheet
13
Revision 1.3 - 2016-08-24
BGS14PN10
Confidential
Bottom view
Top view
0.8
0.375
B
6
4
0.4
1.5 ±0.05
3 x 0.4 = 1.2
5
7
3
8
2
9
1
10
0.2 ±0.05
10x
Pin 1 marking
0.1 B
0.4
0.02 MAX.
1.1 ±0.05
0.2 ±0.05
10x
A
0.1 A
TSNP-10-1-PO V01
Figure 3: Package Dimensions Drawing
Optional solder mask dam
0.4
0.4
0.4
0.2
0.475
10x 0.25
0.4
0.475
10x 0.25
0.4
10x 0.25
Copper
0.4
Stencil apertures
Solder mask
TSNP-10-1-FP V01
Figure 4: Land pattern and stencil mask
Data Sheet
14
Revision 1.3 - 2016-08-24
BGS14PN10
Confidential
Pin 1 marking
4P
Date code (YW)
Type code
TSNP-10-1MK V02
Figure 5: Marking
0.5
1.7
Pin 1
marking
8
4
1.3
TSNP-10-1-TP V01
Figure 6: Tape drawing
Data Sheet
15
Revision 1.3 - 2016-08-24
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Published by Infineon Technologies AG
