BSB012NE2LXIXUMA1

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-MOSFET,25V BSB012NE2LXI DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSTMPower-MOSFET,25V BSB012NE2LXI 1Description CanPAKM-size Features •OptimizedSyncFETforhighperformanceBuckconverter •IntegratedmonolithicSchottkylikediode •Lowprofile(2|ID|RDS(on)max,ID=30A Unit Note/TestCondition Min. Typ. Max. 25 - dV(BR)DSS/dTj - Gate threshold voltage VGS(th) Zero gate voltage drain current, Tj=25°C Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 4400 5900 pF VGS=0V,VDS=12V,f=1MHz Output capacitance Coss - 1900 2600 pF VGS=0V,VDS=12V,f=1MHz Reverse transfer capacitance Crss - 190 - pF VGS=0V,VDS=12V,f=1MHz Turn-on delay time td(on) - 5.4 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω Rise time tr - 6.4 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω Turn-off delay time td(off) - 32 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω Fall time tf - 4.8 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω Final Data Sheet 5 Rev.2.1,2015-09-09 OptiMOSTMPower-MOSFET,25V BSB012NE2LXI Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Values Unit Note/TestCondition 14 nC VDD=12V,ID=30A,VGS=0to4.5V 7.1 - nC VDD=12V,ID=30A,VGS=0to4.5V - 7.3 11 nC VDD=12V,ID=30A,VGS=0to4.5V Qsw - 10.7 - nC VDD=12V,ID=30A,VGS=0to4.5V Gate charge total Qg - 30 40 nC VDD=12V,ID=30A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.4 - V VDD=12V,ID=30A,VGS=0to4.5V Gate charge total Qg - 62 82 nC VDD=12V,ID=30A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 26 - nC VDS=0.1V,VGS=0to4.5V Output charge Qoss - 39 52 nC VDD=12V,VGS=0V Unit Note/TestCondition Min. Typ. Max. Qgs - 10.5 Gate charge at threshold Qg(th) - Gate to drain charge Qgd Switching charge Table7Reversediode Parameter Symbol Diode continuous forward current Values Min. Typ. Max. IS - - 57 A TC=25°C Diode pulse current IS,pulse - - 227 A TC=25°C Diode forward voltage VSD - 0.56 - V VGS=0V,IF=12A,Tj=25°C Reverse recovery charge Qrr - 5 - nC VR=15V,IF=IS,diF/dt=400A/µs 1) See ″Gate charge waveforms″ for parameter definition Final Data Sheet 6 Rev.2.1,2015-09-09 OptiMOSTMPower-MOSFET,25V BSB012NE2LXI 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 60 200 50 160 40 ID[A] Ptot[W] 120 30 80 20 40 10 0 0 40 80 120 0 160 0 40 80 TC[°C] 120 160 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 10 µs 100 µs 102 1 ms 0.2 10 ms 1 ZthJC[K/W] 10 DC ID[A] 0.5 100 100 0.1 0.05 10-1 0.02 0.01 single pulse 10-2 -1 10 10-2 10-1 100 101 102 10-3 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 7 Rev.2.1,2015-09-09 OptiMOSTMPower-MOSFET,25V BSB012NE2LXI Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 400 3.0 3.2 V 4.5 V 3.5 V 350 10 V 2.5 300 3V 2.0 RDS(on)[mΩ] ID[A] 250 200 2.8 V 150 3.2 V 3.5 V 1.5 4V 4.5 V 7V 1.0 5V 10 V 100 0.5 50 0 0 1 2 0.0 3 0 10 20 VDS[V] 30 40 50 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 400 320 320 240 240 ID[A] gfs[S] 400 160 160 150 °C 25 °C 80 0 80 0 1 2 3 4 5 0 0 VGS[V] 80 120 160 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 40 gfs=f(ID);Tj=25°C 8 Rev.2.1,2015-09-09 OptiMOSTMPower-MOSFET,25V BSB012NE2LXI Diagram10:Typ.gatethresholdvoltage 2.0 2.5 1.6 2.0 1.2 1.5 VGS(th)[V] RDS(on)[mΩ] Diagram9:Drain-sourceon-stateresistance typ 0.8 0.4 1.0 0.5 0.0 -40 0 40 80 120 0.0 -40 160 0 40 Tj[°C] 80 120 160 Tj[°C] RDS(on)=f(Tj);ID=30A;VGS=10V VGS(th)=f(Tj);VGS=VDS;ID=10mA Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 -40 °C 25 °C 100 °C 150 °C Ciss 102 IF[A] C[pF] Coss 103 101 100 Crss 102 0 5 10 15 20 25 10-1 0.0 0.2 VDS[V] 0.6 0.8 1.0 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.4 IF=f(VSD);parameter:Tj 9 Rev.2.1,2015-09-09 OptiMOSTMPower-MOSFET,25V BSB012NE2LXI Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 102 12 10 5V 12 V 20 V 25 °C 100 °C 8 VGS[V] IAV[A] 125 °C 101 6 4 2 100 100 101 102 103 0 0 tAV[µs] 20 40 60 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=30Apulsed;parameter:VDD Diagram15:Typ.Drain-sourceleakagecurrent Gate charge waveforms 10-2 10-3 IDSS[A] 125 °C 100 °C 10-4 75 °C 10-5 25 °C -6 10 0 5 10 15 20 VDS[V] IDSS=f(VDS);VGS=0V;parameter:Tj Final Data Sheet 10 Rev.2.1,2015-09-09 OptiMOSTMPower-MOSFET,25V BSB012NE2LXI 6PackageOutlines Figure1OutlineMG-WDSON-2,dimensionsinmm/inches Final Data Sheet 11 Rev.2.1,2015-09-09 OptiMOSTMPower-MOSFET,25V BSB012NE2LXI Figure2OutlineTapeCanPAKMX,dimensionsinmm Final Data Sheet 12 Rev.2.1,2015-09-09 OptiMOSTMPower-MOSFET,25V BSB012NE2LXI Figure3OutlineBoardpadsandaperturesCanPAKMX,dimensionsinmm Final Data Sheet 13 Rev.2.1,2015-09-09 OptiMOSTMPower-MOSFET,25V BSB012NE2LXI RevisionHistory BSB012NE2LXI Revision:2015-09-09,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2015-01-20 Release of final version 2.1 2015-09-09 Rev. 2.0 WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 14 Rev.2.1,2015-09-09