BSB013NE2LXI

BSB013NE2LXI OptiMOSTM Power-MOSFET Product Summary Features • Optimized SyncFET for high performance Buck converter • Integrated monolithic Schottky like diode • Low profile (2|I D|R DS(on)max, I D=30 A page 2 2013-02-12 BSB013NE2LXI Parameter Values Symbol Conditions Unit min. typ. max. - 4400 5900 - 1900 2500 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=12 V, f =1 MHz Output capacitance C oss Reverse transfer capacitance Crss - 190 - Turn-on delay time t d(on) - 5.4 - Rise time tr - 6.4 - Turn-off delay time t d(off) - 32 - Fall time tf - 4.8 - Gate to source charge Q gs - 10.5 14.0 Gate charge at threshold Q g(th) - 7.1 9.4 Gate to drain charge Q gd - 7.3 10.9 Switching charge Q sw - 10.7 15.5 Gate charge total Qg - 30 40 Gate plateau voltage V plateau - 2.4 - Gate charge total Qg V DD=12 V, I D=30 A, V GS=0 to 10 V - 62 83 Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 4.5 V - 26 35 Output charge Q oss V DD=12 V, V GS=0 V - 39 52 - - 57 - - 228 V DD=12 V, V GS=10 V, I D=30 A, R G=1.6 W pF ns Gate Charge Characteristics6) V DD=12 V, I D=30 A, V GS=0 to 4.5 V nC V nC Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=12 A, T j=25 °C - 0.55 0.7 Reverse recovery charge Q rr V R=15 V, I F=I S, di F/dt =400 A/µs - 5 - 6) A T C=25 °C V nC See figure 16 for gate charge parameter definition Rev. 2.4 page 3 2013-02-12 BSB013NE2LXI 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 200 60 50 160 40 ID [A] Ptot [W] 120 30 80 20 40 10 0 0 0 40 80 120 0 160 40 80 TC [°C] 120 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 160 limited by on-state resistance 101 1 µs 10 µs 100 µs 102 1 ms 0.5 100 0.2 101 ZthJC [K/W] 10 ms ID [A] DC 100 0.1 0.05 10-1 0.02 0.01 single pulse 10-2 10-1 10-3 10-2 10-1 100 101 102 10-5 10-4 10-3 10-2 10-1 100 tp [s] VDS [V] Rev. 2.4 10-6 page 4 2013-02-12 BSB013NE2LXI 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 3 400 4.5 V 350 3.5 V 10 V 2.5 3.2 V 300 3.2 V 2 RDS(on) [mW] ID [A] 250 3V 200 3.5 V 4V 1.5 4.5 V 5V 7V 150 2.8 V 10 V 1 100 0.5 50 0 0 0 1 2 0 3 10 20 VDS [V] 30 40 50 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 400 320 320 240 240 ID [A] gfs [S] 400 160 160 150 °C 80 25 °C 80 0 0 0 1 2 3 4 5 0 VGS [V] Rev. 2.4 40 80 120 160 ID [A] page 5 2013-02-12 BSB013NE2LXI 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=30 A; V GS=10 V V GS(th)=f(T j); V GS=V DS; I D=10 mA 2 2.5 1.6 2 1.2 1.5 VGS(th) [V] RDS(on) [mW] 9 Drain-source on-state resistance typ 0.8 0.4 1 0.5 0 0 -40 0 40 80 120 160 -40 0 Tj [°C] 40 80 120 160 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 103 104 Ciss 102 25 °C 150 °C 100 °C -40 °C IF [A] C [pF] Coss 103 101 100 Crss 10-1 102 0 5 10 15 20 0 25 0.4 0.6 0.8 1 VSD [V] VDS [V] Rev. 2.4 0.2 page 6 2013-02-12 BSB013NE2LXI 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=30 A pulsed parameter: T j(start) parameter: V DD 100 12 12 V 5V 10 20 V 25 °C 100 °C 8 VGS [V] IAV [A] 125 °C 10 6 4 2 1 0 1 10 100 1000 0 20 tAV [µs] 40 60 Qgate [nC] 15 Typ. Drain-source leakage current 16 Gate charge waveforms I DSS=f(V DS ); V GS=0 V parameter: T j 10-2 V GS Qg 10-3 125 °C IDSS [A] 100 °C 10-4 75 °C V gs(th) 10-5 Q g(th) Q sw Q gate 25 °C Q gs 10-6 0 5 10 15 Q gd 20 VDS [V] Rev. 2.4 page 7 2013-02-12 BSB013NE2LXI Package Outline Rev. 2.4 page 8 2013-02-12 BSB013NE2LXI Package Outline MG-WDSON-2 PG-TDSON-8: Tape Dimensions in mm Rev. 2.4 page 9 2013-02-12 BSB013NE2LXI CanPAK MX: Boardpads & Apertures Dimensions in mm Recommended stencil thickness 150 mm Marking Layout Rev. 2.4 page 10 2013-02-12 BSB013NE2LXI Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.4 page 11 2013-02-12