BSC009NE2LSATMA1

BSC009NE2LS MOSFET OptiMOSTMPower-MOSFET,25V SuperSO8 8 Features •Optimizedfore-fuseandORingapplication •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Value Unit VDS 25 V RDS(on),max 0.9 mΩ ID 255 A QOSS 38 nC QG(0V..10V) 126 nC Type/OrderingCode Package BSC009NE2LS PG-TDSON-8 1) 5 6 2 Marking 009NE2LS 3 6 5 4 1 Table1KeyPerformanceParameters Parameter 7 3 2 4 7 8 1 S1 8D S2 7D S3 6D G4 5D RelatedLinks - J-STD20 and JESD22 Final Data Sheet 1 Rev.2.5,2020-06-17 OptiMOSTMPower-MOSFET,25V BSC009NE2LS TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.5,2020-06-17 OptiMOSTMPower-MOSFET,25V BSC009NE2LS 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 255 161 221 139 41 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C,RthJA=50K/W2) - 1020 A TC=25°C - - 50 A TC=25°C EAS - - 190 mJ ID=50A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 96 2.5 W TC=25°C TA=25°C,RthJA=50K/W2) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche current, single pulse IAS Avalanche energy, single pulse Continuous drain current1) Pulsed drain current3) 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - - 1.3 K/W - Thermal resistance, junction - case, top RthJC - - 20 K/W - Device on PCB, 6 cm2 cooling area2) RthJA - - 50 K/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.5,2020-06-17 OptiMOSTMPower-MOSFET,25V BSC009NE2LS 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA - 2.2 V VDS=VGS,ID=250µA - 0.1 10 10 100 µA VDS=25V,VGS=0V,Tj=25°C VDS=25V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 1.0 0.75 1.2 0.9 mΩ VGS=4.5V,ID=30A VGS=10V,ID=30A Gate resistance RG 0.4 0.8 1.6 Ω - Transconductance gfs 85 170 - S |VDS|>2|ID|RDS(on)max,ID=30A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 25 - Gate threshold voltage VGS(th) 1 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance1) Values Min. Typ. Max. Ciss - 5800 7714 pF VGS=0V,VDS=12V,f=1MHz Output capacitance1) Coss - 1900 2527 pF VGS=0V,VDS=12V,f=1MHz Reverse transfer capacitance Crss - 1700 - pF VGS=0V,VDS=12V,f=1MHz Turn-on delay time td(on) - 10 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω Rise time tr - 33 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω Turn-off delay time td(off) - 48 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω Fall time tf - 19 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω Unit Note/TestCondition Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge1) Gate charge at threshold Values Min. Typ. Max. Qgs - 14 19 nC VDD=12V,ID=30A,VGS=0to4.5V Qg(th) - 9 - nC VDD=12V,ID=30A,VGS=0to4.5V Gate to drain charge Qgd - 37 56 nC VDD=12V,ID=30A,VGS=0to4.5V Switching charge Qsw - 41 - nC VDD=12V,ID=30A,VGS=0to4.5V Gate charge total Qg - 72 96 nC VDD=12V,ID=30A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.3 - V VDD=12V,ID=30A,VGS=0to4.5V Gate charge total1) Qg - 126 168 nC VDD=12V,ID=30A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 43 - nC VDS=0.1V,VGS=0to4.5V Qoss - 38 51 nC VDD=12V,VGS=0V 1) 1) 1) Output charge 1) 2) Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.5,2020-06-17 OptiMOSTMPower-MOSFET,25V BSC009NE2LS Table7Reversediode Parameter Symbol Diode continuous forward current Values Unit Note/TestCondition 100 A TC=25°C - 1020 A TC=25°C - 0.8 1 V VGS=0V,IF=30A,Tj=25°C - 20 - nC VR=15V,IF=IS,diF/dt=400A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery charge Qrr Final Data Sheet 5 Rev.2.5,2020-06-17 OptiMOSTMPower-MOSFET,25V BSC009NE2LS 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 120 280 240 100 200 160 ID[A] Ptot[W] 80 60 120 40 80 20 0 40 0 40 80 120 0 160 0 20 40 60 TC[°C] 80 100 120 140 160 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 4 101 10 103 10 µs 100 1 µs 0.5 100 µs 0.2 ZthJC[K/W] ID[A] 102 1 ms 10 ms 1 10 0.1 10-1 0.05 0.02 DC 0.01 10 -2 single pulse 100 10-1 10-1 100 101 102 10-3 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.5,2020-06-17 OptiMOSTMPower-MOSFET,25V BSC009NE2LS Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 800 2.0 10 V 5V 700 4.5 V 4 V 600 3.5 V 3.5 V RDS(on)[mΩ] ID[A] 500 400 3.2 V 300 4V 4.5 V 5V 1.0 7V 8V 10 V 3V 200 0.5 2.8 V 100 0 3.2 V 1.5 0 1 2 0.0 3 0 10 20 VDS[V] 30 40 50 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 400 320 320 240 240 ID[A] gfs[S] 400 160 160 80 0 150 °C 0 1 80 25 °C 2 3 4 5 0 0 VGS[V] 80 120 160 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 40 gfs=f(ID);Tj=25°C 7 Rev.2.5,2020-06-17 OptiMOSTMPower-MOSFET,25V BSC009NE2LS Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 3.0 2.5 2.5 2.0 1.5 VGS(th)[V] RDS(on)[mΩ] 2.0 1.5 250 µA 1.0 1.0 typ 0.5 0.5 0.0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=30A;VGS=10V VGS(th)=f(Tj);VGS=VDS;ID=250µA Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 104 10 25 °C 25 °C, max 150 °C 150 °C, max Ciss 103 Crss IF[A] C[pF] Coss 103 102 101 102 0 5 10 15 20 25 100 0.00 0.25 VDS[V] 0.75 1.00 1.25 1.50 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.50 IF=f(VSD);parameter:Tj 8 Rev.2.5,2020-06-17 OptiMOSTMPower-MOSFET,25V BSC009NE2LS Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 12 V 10 100 °C 25 °C 5V 8 VGS[V] IAV[A] 125 °C 101 20 V 6 4 2 100 100 101 102 103 tAV[µs] 0 0 20 40 60 80 100 120 140 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=30Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 28 27 26 VBR(DSS)[V] 25 24 23 22 21 20 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.5,2020-06-17 OptiMOSTMPower-MOSFET,25V BSC009NE2LS 5PackageOutlines DOCUMENT NO. Z8B00003332 REVISION 07 DIMENSION A A1 b D D1 D2 E E1 E2 e L M MILLIMETERS MIN. MAX. 0.90 1.20 0.15 0.35 0.34 0.54 4.80 5.35 3.90 4.40 0.03 0.23 5.70 6.10 5.90 6.42 3.88 4.31 1.27 0.45 0.71 0.45 0.69 SCALE 10:1 0 1 2 3mm EUROPEAN PROJECTION ISSUE DATE 06.06.2019 Figure1OutlinePG-TDSON-8,dimensionsinmm Final Data Sheet 10 Rev.2.5,2020-06-17 OptiMOSTMPower-MOSFET,25V BSC009NE2LS PG-TDSON-8: RecommenGHd BoDrdpads & Apertures 1.905 1.905 1.27 3x 0.6 1.27 3x copper Figure 2 Final Data Sheet 1.6 0.2 1.27 3x 0.825 2.863 0.5 0.925 2.863 1.27 3x 1.905 0.875 1.5 0.75 0.2 2.9 4.455 3.325 0.8 0.5 1.5 0.4 1.905 stencil apertures solder mask all dimensions in mm Outline Boardpads (TDSON-8), dimensions in mm 11 Rev.2.5,2020-06-17 OptiMOS TM Power-MOSFET , 25 V BSC009NE2LS Dimension in mm Figure 3 Final Data Sheet Outline Tape (TDSON-8) 12 Rev. 2.5, 2020-06-17 OptiMOS TM Power-MOSFET , 25 V BSC009NE2LS Revision History BSC009NE2LS Revision: 2020-06-17, Rev. 2.5 Previous Revision Revision Date Subjects (major changes since last revision) 2.4 2020-02-24 Update package drawings and footnotes 2.5 2020-06-17 Update current rating Trademarks All referenced product or service names and trademarks are the property of their respective owners. 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The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 13 Rev. 2.5, 2020-06-17