BSC010N04LSI

BSC010N04LSI MOSFET OptiMOSTMPower-MOSFET,40V TDSON-8FL(enlargedsourceinterconnection) 8 Features •Optimizedforsynchronousrectification •IntegratedmonolithicSchottky-likediode •Verylowon-resistanceRDS(on) •100%avalanchetested •N-channel,logiclevel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Highersolderjointreliabilityduetoenlargedsourceinterconnection Table1KeyPerformanceParameters Parameter Value Unit VDS 40 V RDS(on),max 1.05 mΩ ID 100 A QOSS 83 nC QG(0V..10V) 87 nC 1 2 7 6 5 3 4 4 3 2 6 7 8 1 S1 8D S2 7D S3 6D G4 5D Type/OrderingCode Package Marking RelatedLinks BSC010N04LSI TDSON-8 FL 010N04LI - 1) 5 J-STD20 and JESD22 Final Data Sheet 1 Rev.2.4,2019-09-27 OptiMOSTMPower-MOSFET,40V BSC010N04LSI TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.4,2019-09-27 OptiMOSTMPower-MOSFET,40V BSC010N04LSI 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 100 100 100 100 37 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C,RthJA=50K/W1) - 400 A TC=25°C - - 50 A TC=25°C EAS - - 230 mJ ID=50A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 139 2.5 W TC=25°C TA=25°C,RthJA=50K/W1) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche current, single pulse IAS Avalanche energy, single pulse Continuous drain current Pulsed drain current2) 3) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - 0.5 0.9 K/W - Thermal resistance, junction - case, top RthJC - - 20 K/W - Device on PCB, 6 cm2 cooling area1) RthJA - - 50 K/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See Diagram 3 for more detailed information 3) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.4,2019-09-27 OptiMOSTMPower-MOSFET,40V BSC010N04LSI 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage V(BR)DSS Breakdown voltage temperature coefficient Values Unit Note/TestCondition - V VGS=0V,ID=10mA 30 - mV/K ID=10mA,referencedto25°C 1.2 - 2 V VDS=VGS,ID=250µA IDSS - 3 0.5 - mA VDS=32V,VGS=0V,Tj=25°C VDS=32V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 1.1 0.9 1.4 1.05 mΩ VGS=4.5V,ID=50A VGS=10V,ID=50A Gate resistance1) RG - 0.8 1.6 Ω - Transconductance gfs 130 260 - S |VDS|>2|ID|RDS(on)max,ID=50A Unit Note/TestCondition Min. Typ. Max. 40 - dV(BR)DSS/dTj - Gate threshold voltage VGS(th) Zero gate voltage drain current Table5Dynamiccharacteristics Parameter Symbol Values Min. Typ. Max. Ciss - 6200 8680 pF VGS=0V,VDS=20V,f=1MHz Coss - 1900 2660 pF VGS=0V,VDS=20V,f=1MHz Reverse transfer capacitance Crss - 140 280 pF VGS=0V,VDS=20V,f=1MHz Turn-on delay time td(on) - 9 - ns VDD=20V,VGS=10V,ID=30A, RG,ext=1.6Ω Rise time tr - 4 - ns VDD=20V,VGS=10V,ID=30A, RG,ext=1.6Ω Turn-off delay time td(off) - 33 - ns VDD=20V,VGS=10V,ID=30A, RG,ext=1.6Ω Fall time tf - 7 - ns VDD=20V,VGS=10V,ID=30A, RG,ext=1.6Ω Input capacitance1) 1) Output capacitance 1) 1) Defined by design. Not subject to production test Final Data Sheet 4 Rev.2.4,2019-09-27 OptiMOSTMPower-MOSFET,40V BSC010N04LSI Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Values Unit Note/TestCondition - nC VDD=20V,ID=50A,VGS=0to10V 9.9 - nC VDD=20V,ID=50A,VGS=0to10V - 14 20 nC VDD=20V,ID=50A,VGS=0to10V Qsw - 19 - nC VDD=20V,ID=50A,VGS=0to10V Gate charge total Qg - 87 122 nC VDD=20V,ID=50A,VGS=0to10V Gate plateau voltage Vplateau - 2.4 - V VDD=20V,ID=50A,VGS=0to10V Gate charge total Qg - 45 63 nC VDD=20V,ID=50A,VGS=0to4.5V Gate charge total, sync. FET Qg(sync) - 76 - nC VDS=0.1V,VGS=0to10V Qoss - 83 116 nC VDD=20V,VGS=0V Unit Note/TestCondition Min. Typ. Max. Qgs - 15 Gate charge at threshold Qg(th) - Gate to drain charge2) Qgd Switching charge 2) 2) 2) Output charge Table7Reversediode Parameter Symbol Diode continuous forward current Values Min. Typ. Max. IS - - 100 A TC=25°C Diode pulse current IS,pulse - - 400 A TC=25°C Diode forward voltage VSD - 0.57 0.7 V VGS=0V,IF=20A,Tj=25°C Reverse recovery charge Qrr - 20 - nC VR=20V,IF=20A,diF/dt=400A/µs 1) 2) See ″Gate charge waveforms″ for parameter definition Defined by design. Not subject to production test Final Data Sheet 5 Rev.2.4,2019-09-27 OptiMOSTMPower-MOSFET,40V BSC010N04LSI 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 160 120 140 100 120 80 ID[A] Ptot[W] 100 80 60 60 40 40 20 20 0 0 40 80 120 0 160 0 40 80 TC[°C] 120 160 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 10 µs 100 µs 102 100 1 ms 0.5 ZthJC[K/W] ID[A] 10 ms DC 1 10 0.2 10 -1 0.1 0.05 0.02 0.01 100 10-1 10-1 10-2 100 101 102 10-3 single pulse 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.4,2019-09-27 OptiMOSTMPower-MOSFET,40V BSC010N04LSI Diagram5:Typ.outputcharacteristics 800 Diagram6:Typ.drain-sourceonresistance 2.0 5V 4.5 V 10 V 700 4V 3.5 V 600 1.5 3.2 V 3.5 V 400 RDS(on)[mΩ] ID[A] 500 3.2 V 300 4V 4.5 V 5V 1.0 6V 8V 10 V 3V 200 0.5 2.8 V 100 0 0 1 2 0.0 3 0 20 40 VDS[V] 60 80 100 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 400 320 320 240 240 ID[A] gfs[S] 400 160 160 150 °C 25 °C 80 0 80 0 1 2 3 4 5 0 0 VGS[V] 50 75 100 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 25 gfs=f(ID);Tj=25°C 7 Rev.2.4,2019-09-27 OptiMOSTMPower-MOSFET,40V BSC010N04LSI Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 2.0 2.5 2.0 1.5 1.5 VGS(th)[V] RDS(on)[mΩ] max 1.0 typ 1.0 0.5 0.5 0.0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 RDS(on)=f(Tj);ID=50A;VGS=10V VGS(th)=f(Tj);VGS=VDS;IDS=10mA Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 10 180 Tj[°C] 103 Ciss -55 °C 25 °C 125 °C 150 °C Coss 102 IF[A] C[pF] 103 Crss 101 102 100 101 0 10 20 30 40 10-1 0.0 VDS[V] 0.8 1.2 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.4 IF=f(VSD);parameter:Tj 8 Rev.2.4,2019-09-27 OptiMOSTMPower-MOSFET,40V BSC010N04LSI Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 20 V 10 8V 25 °C 32 V 100 °C 8 VGS[V] IAV[A] 125 °C 101 6 4 2 100 100 101 102 103 tAV[µs] 0 0 20 40 60 80 100 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=50Apulsed;parameter:VDD Diagram15:Typ.drain-sourceleakagecurrent Diagram Gate charge waveforms -2 10 125 °C 10-3 100 °C IDSS[A] 75 °C 10-4 25 °C -5 10 10-6 0 5 10 15 20 25 30 35 VSD[V] IDSS=f(VDS);VGS=0V;parameter:Tj Final Data Sheet 9 Rev.2.4,2019-09-27 OptiMOSTMPower-MOSFET,40V BSC010N04LSI 5PackageOutlines DOCUMENT NO. Z8B000193699 REVISION 03 DIMENSION A A1 b D D1 D2 E E1 E2 e L M MILLIMETERS MIN. MAX. 0.90 1.20 0.15 0.35 0.26 0.54 4.80 5.35 3.70 4.40 0.02 0.23 5.70 6.10 5.90 6.42 3.88 4.42 1.27 0.69 0.90 0.45 0.69 SCALE 10:1 0 1 2 3mm EUROPEAN PROJECTION ISSUE DATE 19.06.2019 Figure1OutlineTDSON-8FL,dimensionsinmm Final Data Sheet 10 Rev.2.4,2019-09-27 OptiMOSTMPower-MOSFET,40V BSC010N04LSI Figure2OutlineTape(TDSON-8FL) Final Data Sheet 11 Rev.2.4,2019-09-27 OptiMOSTMPower-MOSFET,40V BSC010N04LSI PG-TDSON-8­FL: RecommenGHd BoDrdpads & Apertures Figure 3 Final Data Sheet Outline Boardpads (TDSON-8 FL) 12 Rev.2.4,2019-09-27 OptiMOS TM Power-MOSFET , 40 V BSC010N04LSI Revision History BSC010N04LSI Revision: 2019-09-27, Rev. 2.4 Previous Revision Revision Date Subjects (major changes since last revision) 2.2 2016-05-04 Update footnotes and insert max values 2.3 2018-08-17 Update timing parameters 2.4 2019-09-27 Update package drawings Trademarks All referenced product or service names and trademarks are the property of their respective owners. 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The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 13 Rev. 2.4, 2019-09-27