BSC010NE2LSI

BSC010NE2LSI MOSFET OptiMOSTMPower-MOSFET,25V SuperSO8 8 Features •OptimizedforhighperformanceBuckconverter •MonolithicintegratedSchottkylikediode •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Value Unit VDS 25 V RDS(on),max 1.05 mΩ ID 236 A QOSS 38 nC QG(0V..10V) 59 nC Type/OrderingCode Package BSC010NE2LSI PG-TDSON-8 1) 5 6 2 Marking 010NE2LI 3 6 5 4 1 Table1KeyPerformanceParameters Parameter 7 3 2 4 7 8 1 S1 8D S2 7D S3 6D G4 5D RelatedLinks - J-STD20 and JESD22 Final Data Sheet 1 Rev.2.7,2020-08-26 OptiMOSTMPower-MOSFET,25V BSC010NE2LSI TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.7,2020-08-26 OptiMOSTMPower-MOSFET,25V BSC010NE2LSI 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 236 149 204 129 38 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C,RthJA=50K/W2) - 944 A TC=25°C - - 50 A TC=25°C EAS - - 100 mJ ID=50A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 96 2.5 W TC=25°C TA=25°C,RthJA=50K/W2) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche current, single pulse IAS Avalanche energy, single pulse Continuous drain current1) Pulsed drain current3) 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - - 1.3 K/W - Thermal resistance, junction - case, top RthJC - - 20 K/W - Device on PCB, 6 cm2 cooling area2) RthJA - - 50 K/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information 4) See figure 13 for more detailed information Final Data Sheet 3 Rev.2.7,2020-08-26 OptiMOSTMPower-MOSFET,25V BSC010NE2LSI 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage V(BR)DSS Breakdown voltage temperature coefficient Values Unit Note/TestCondition - V VGS=0V,ID=1mA 15 - mV/K ID=10mA,referencedto25°C 1.2 - 2 V VDS=VGS,ID=250µA IDSS - 3 0.5 - mA VDS=20V,VGS=0V,Tj=25°C VDS=20V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 1.1 0.9 1.4 1.05 mΩ VGS=4.5V,ID=30A VGS=10V,ID=30A Gate resistance RG 0.3 0.6 1.2 Ω - Transconductance gfs 80 160 - S |VDS|>2|ID|RDS(on)max,ID=30A Unit Note/TestCondition Min. Typ. Max. 25 - dV(BR)DSS/dTj - Gate threshold voltage VGS(th) Zero gate voltage drain current Table5Dynamiccharacteristics Parameter Symbol Values Min. Typ. Max. Ciss - 4200 5600 pF VGS=0V,VDS=12V,f=1MHz Output capacitance Coss - 1800 2400 pF VGS=0V,VDS=12V,f=1MHz Reverse transfer capacitance Crss - 180 - pF VGS=0V,VDS=12V,f=1MHz Turn-on delay time td(on) - 6.3 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω Rise time tr - 6.2 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω Turn-off delay time td(off) - 32 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω Fall time tf - 4.6 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω Input capacitance1) 1) 1) Defined by design. Not subject to production test Final Data Sheet 4 Rev.2.7,2020-08-26 OptiMOSTMPower-MOSFET,25V BSC010NE2LSI Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge2) Values Unit Note/TestCondition 13 nC VDD=12V,ID=30A,VGS=0to4.5V 6.7 - nC VDD=12V,ID=30A,VGS=0to4.5V - 6.9 10 nC VDD=12V,ID=30A,VGS=0to4.5V Qsw - 10 - nC VDD=12V,ID=30A,VGS=0to4.5V Gate charge total Qg - 29 39 nC VDD=12V,ID=30A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.4 - V VDD=12V,ID=30A,VGS=0to4.5V Gate charge total Qg - 59 78 nC VDD=12V,ID=30A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 25 - nC VDS=0.1V,VGS=0to4.5V Qoss - 38 51 nC VDD=12V,VGS=0V Unit Note/TestCondition Min. Typ. Max. Qgs - 10 Gate charge at threshold Qg(th) - Gate to drain charge2) Qgd Switching charge 2) 2) 2) Output charge Table7Reversediode Parameter Symbol Diode continuous forward current Values Min. Typ. Max. IS - - 96 A TC=25°C Diode pulse current IS,pulse - - 944 A TC=25°C Diode forward voltage VSD - 0.56 0.7 V VGS=0V,IF=12A,Tj=25°C Reverse recovery charge Qrr - 5 - nC VR=15V,IF=12A,diF/dt=400A/µs 1) 2) See ″Gate charge waveforms″ for parameter definition Defined by design. Not subject to production test Final Data Sheet 5 Rev.2.7,2020-08-26 OptiMOSTMPower-MOSFET,25V BSC010NE2LSI 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 120 250 100 200 80 ID[A] Ptot[W] 150 60 100 40 50 20 0 0 40 80 120 0 160 0 20 40 60 TC[°C] 80 100 120 140 160 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 10 µs 100 µs 102 100 0.5 1 ms 0.2 101 ZthJC[K/W] ID[A] 10 ms DC 0.1 10-1 0.05 0.02 0.01 100 10-1 10-1 single pulse 10-2 100 101 102 10-3 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.7,2020-08-26 OptiMOSTMPower-MOSFET,25V BSC010NE2LSI Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 800 2.0 5V 4.5 V 10 V 700 3.2 V 4V 600 3.5 V 1.5 4V 4.5 V RDS(on)[mΩ] ID[A] 500 3.5 V 400 300 1.0 7V 8V 10 V 3.2 V 200 0.5 3V 2.8 V 100 0 5V 0 1 2 0.0 3 0 10 20 VDS[V] 30 40 50 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 400 320 320 240 240 ID[A] gfs[S] 400 160 160 150 °C 25 °C 80 0 80 0 1 2 3 4 5 0 0 VGS[V] 80 120 160 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 40 gfs=f(ID);Tj=25°C 7 Rev.2.7,2020-08-26 OptiMOSTMPower-MOSFET,25V BSC010NE2LSI Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 3.0 2.5 2.5 2.0 10 mA 1.5 VGS(th)[V] RDS(on)[mΩ] 2.0 1.5 1.0 1.0 typ 0.5 0.5 0.0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 RDS(on)=f(Tj);ID=30A;VGS=10V VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 -55 °C 25 °C 125 °C 150 °C Ciss 102 IF[A] Coss C[pF] 180 Tj[°C] 103 101 Crss 102 0 5 10 15 20 25 100 0.00 0.25 VDS[V] 0.75 1.00 1.25 1.50 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.50 IF=f(VSD);parameter:Tj 8 Rev.2.7,2020-08-26 OptiMOSTMPower-MOSFET,25V BSC010NE2LSI Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 12 V 10 5V 25 °C 20 V 8 125 °C VGS[V] IAV[A] 100 °C 101 6 4 2 100 100 101 102 103 tAV[µs] 0 0 10 20 30 40 50 60 70 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=30Apulsed;parameter:VDD Diagram15:Typ.drain-sourceleakagecurrent Diagram Gate charge waveforms -2 10 125 °C 10-3 100 °C IDSS[A] 75 °C 10-4 10-5 10-6 25 °C 0 5 10 15 20 VSD[V] IDSS=f(VDS);VGS=0V;parameter:Tj Final Data Sheet 9 Rev.2.7,2020-08-26 OptiMOSTMPower-MOSFET,25V BSC010NE2LSI 5PackageOutlines DOCUMENT NO. Z8B00003332 REVISION 07 DIMENSION A A1 b D D1 D2 E E1 E2 e L M MILLIMETERS MIN. MAX. 0.90 1.20 0.15 0.35 0.34 0.54 4.80 5.35 3.90 4.40 0.03 0.23 5.70 6.10 5.90 6.42 3.88 4.31 1.27 0.45 0.71 0.45 0.69 SCALE 10:1 0 1 2 3mm EUROPEAN PROJECTION ISSUE DATE 06.06.2019 Figure1OutlinePG-TDSON-8,dimensionsinmm Final Data Sheet 10 Rev.2.7,2020-08-26 OptiMOSTMPower-MOSFET,25V BSC010NE2LSI PG-TDSON-8: RecommenGHd BoDrdpads & Apertures 1.905 1.905 1.27 3x 0.6 1.27 3x copper Figure 2 Final Data Sheet 1.6 0.2 1.27 3x 0.825 2.863 0.5 0.925 2.863 1.27 3x 1.905 0.875 1.5 0.75 0.2 2.9 4.455 3.325 0.8 0.5 1.5 0.4 1.905 stencil apertures solder mask all dimensions in mm Outline Boardpads (TDSON-8), dimensions in mm 11 Rev.2.7,2020-08-26 OptiMOS TM Power-MOSFET , 25 V BSC010NE2LSI Dimension in mm Figure 3 Final Data Sheet Outline Tape (TDSON-8) 12 Rev. 2.7, 2020-08-26 OptiMOS TM Power-MOSFET , 25 V BSC010NE2LSI Revision History BSC010NE2LSI Revision: 2020-08-26, Rev. 2.7 Previous Revision Revision Date Subjects (major changes since last revision) 2.3 2014-03-03 Release of Final Version 2.4 2016-01-29 Update "Operating temperature" 2.5 2019-07-22 Update package outline 2.7 2020-08-26 Update current rating Trademarks All referenced product or service names and trademarks are the property of their respective owners. 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The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 13 Rev. 2.7, 2020-08-26