BSC014N04LSI

BSC014N04LSI MOSFET OptiMOSTMPower-MOSFET,40V TDSON-8FL(enlargedsourceinterconnection) 8 Features •Optimizedforsynchronousrectification •IntegratedmonolithicSchottky-likediode •Verylowon-resistanceRDS(on) •100%avalanchetested •N-channel,logiclevel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Highersolderjointreliabilityduetoenlargedsourceinterconnection Table1KeyPerformanceParameters Parameter Value Unit VDS 40 V RDS(on),max 1.45 mΩ ID 195 A QOSS 53 nC QG(0V..10V) 55 nC 1 2 7 6 5 3 4 4 3 2 6 7 8 1 S1 8D S2 7D S3 6D G4 5D Type/OrderingCode Package Marking RelatedLinks BSC014N04LSI TDSON-8 FL 014N04LI - 1) 5 J-STD20 and JESD22 Final Data Sheet 1 Rev.2.4,2020-05-15 OptiMOSTMPower-MOSFET,40V BSC014N04LSI TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.4,2020-05-15 OptiMOSTMPower-MOSFET,40V BSC014N04LSI 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 195 123 166 105 31 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C,RthJA=50K/W2) - 780 A TC=25°C - - 50 A TC=25°C EAS - - 90 mJ ID=50A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 96 2.5 W TC=25°C TA=25°C,RthJA=50K/W2) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche current, single pulse IAS Avalanche energy, single pulse Continuous drain current1) Pulsed drain current3) 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - 0.8 1.3 K/W - Thermal resistance, junction - case, top RthJC - - 20 K/W - Device on PCB, 6 cm2 cooling area2) RthJA - - 50 K/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.4,2020-05-15 OptiMOSTMPower-MOSFET,40V BSC014N04LSI 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage V(BR)DSS Breakdown voltage temperature coefficient Values Unit Note/TestCondition - V VGS=0V,ID=10mA 30 - mV/K ID=10mA,referencedto25°C 1.2 - 2 V VDS=VGS,ID=250µA IDSS - 2 0.5 - mA VDS=32V,VGS=0V,Tj=25°C VDS=32V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 1.5 1.2 2 1.45 mΩ VGS=4.5V,ID=50A VGS=10V,ID=50A Gate resistance1) RG 0.45 0.9 1.8 Ω - Transconductance gfs 110 220 - S |VDS|>2|ID|RDS(on)max,ID=50A Unit Note/TestCondition Min. Typ. Max. 40 - dV(BR)DSS/dTj - Gate threshold voltage VGS(th) Zero gate voltage drain current Table5Dynamiccharacteristics Parameter Symbol Values Min. Typ. Max. Ciss - 4000 5600 pF VGS=0V,VDS=20V,f=1MHz Coss - 1200 1680 pF VGS=0V,VDS=20V,f=1MHz Reverse transfer capacitance Crss - 90 180 pF VGS=0V,VDS=20V,f=1MHz Turn-on delay time td(on) - 16 - ns VDD=20V,VGS=10V,ID=30A, RG,ext,ext=1.6Ω Rise time tr - 50 - ns VDD=20V,VGS=10V,ID=30A, RG,ext,ext=1.6Ω Turn-off delay time td(off) - 55 - ns VDD=20V,VGS=10V,ID=30A, RG,ext,ext=1.6Ω Fall time tf - 11 - ns VDD=20V,VGS=10V,ID=30A, RG,ext,ext=1.6Ω Input capacitance1) 1) Output capacitance 1) 1) Defined by design. Not subject to production test Final Data Sheet 4 Rev.2.4,2020-05-15 OptiMOSTMPower-MOSFET,40V BSC014N04LSI Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Values Unit Note/TestCondition - nC VDD=20V,ID=50A,VGS=0to10V 6.3 - nC VDD=20V,ID=50A,VGS=0to10V - 8.9 12.5 nC VDD=20V,ID=50A,VGS=0to10V Qsw - 12 - nC VDD=20V,ID=50A,VGS=0to10V Gate charge total Qg - 55 77 nC VDD=20V,ID=50A,VGS=0to10V Gate plateau voltage Vplateau - 2.5 - V VDD=20V,ID=50A,VGS=0to10V Gate charge total Qg - 29 41 nC VDD=20V,ID=50A,VGS=0to4.5V Gate charge total, sync. FET Qg(sync) - 49 - nC VDS=0.1V,VGS=0to10V Qoss - 53 74 nC VDD=20V,VGS=0V Unit Note/TestCondition Min. Typ. Max. Qgs - 9.9 Gate charge at threshold Qg(th) - Gate to drain charge2) Qgd Switching charge 2) 2) 2) Output charge Table7Reversediode Parameter Symbol Diode continuous forward current Values Min. Typ. Max. IS - - 96 A TC=25°C Diode pulse current IS,pulse - - 780 A TC=25°C Diode forward voltage VSD - 0.56 0.7 V VGS=0V,IF=12A,Tj=25°C Reverse recovery charge Qrr - 20 - nC VR=20V,IF=12A,diF/dt=400A/µs 1) 2) See ″Gate charge waveforms″ for parameter definition Defined by design. Not subject to production test Final Data Sheet 5 Rev.2.4,2020-05-15 OptiMOSTMPower-MOSFET,40V BSC014N04LSI 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 120 200 175 100 150 80 ID[A] Ptot[W] 125 60 100 75 40 50 20 25 0 0 40 80 120 0 160 0 20 40 60 TC[°C] 80 100 120 140 160 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 10 µs 100 µs 102 100 0.5 1 ms 0.2 101 ZthJC[K/W] ID[A] 10 ms DC 0.1 10-1 0.05 0.02 0.01 100 10-1 10-1 single pulse 10-2 100 101 102 10-3 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.4,2020-05-15 OptiMOSTMPower-MOSFET,40V BSC014N04LSI Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 800 2.0 3.5 V 5V 700 10 V 4V 4.5 V 600 4.5 V 5V 1.5 4V 6V 8V RDS(on)[mΩ] ID[A] 500 3.5 V 400 300 1.0 3.2 V 200 0.5 3V 2.8 V 100 0 10 V 0 1 2 0.0 3 0 20 40 VDS[V] 60 80 100 80 100 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 400 320 320 240 ID[A] gfs[S] 240 160 160 80 25 °C 80 0 150 °C 0 1 2 3 4 5 0 0 VGS[V] 40 60 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 20 gfs=f(ID);Tj=25°C 7 Rev.2.4,2020-05-15 OptiMOSTMPower-MOSFET,40V BSC014N04LSI Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 3.0 2.5 2.5 2.0 2.0 1.5 VGS(th)[V] RDS(on)[mΩ] max 1.5 typ 1.0 1.0 0.5 0.5 0.0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=50A;VGS=10V VGS(th)=f(Tj);VGS=VDS;IDS=10mA Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 -55 °C 25 °C 125 °C 150 °C Ciss 102 Coss IF[A] C[pF] 103 101 Crss 102 100 101 0 10 20 30 40 10-1 0.0 VDS[V] 0.8 1.2 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.4 IF=f(VSD);parameter:Tj 8 Rev.2.4,2020-05-15 OptiMOSTMPower-MOSFET,40V BSC014N04LSI Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 20 V 10 8V 25 °C 32 V 8 VGS[V] IAV[A] 100 °C 101 125 °C 6 4 2 100 100 101 102 103 tAV[µs] 0 0 20 40 60 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=50Apulsed;parameter:VDD Diagram15:Typ.drain-sourceleakagecurrent Diagram Gate charge waveforms -2 10 125 °C 10-3 100 °C IDSS[A] 75 °C 10-4 25 °C 10-5 10-6 0 5 10 15 20 25 30 35 VSD[V] IDSS=f(VDS);VGS=0V;parameter:Tj Final Data Sheet 9 Rev.2.4,2020-05-15 OptiMOSTMPower-MOSFET,40V BSC014N04LSI 5PackageOutlines DOCUMENT NO. Z8B000193699 REVISION 03 DIMENSION A A1 b D D1 D2 E E1 E2 e L M MILLIMETERS MIN. MAX. 0.90 1.20 0.15 0.35 0.26 0.54 4.80 5.35 3.70 4.40 0.02 0.23 5.70 6.10 5.90 6.42 3.88 4.42 1.27 0.69 0.90 0.45 0.69 SCALE 10:1 0 1 2 3mm EUROPEAN PROJECTION ISSUE DATE 19.06.2019 Figure1OutlineTDSON-8FL,dimensionsinmm Final Data Sheet 10 Rev.2.4,2020-05-15 OptiMOSTMPower-MOSFET,40V BSC014N04LSI PG-TDSON-8­FL: RecommenGHd BoDrdpads & Apertures Figure 2 Final Data Sheet Outline Boardpads (TDSON-8 FL) 11 Rev.2.4,2020-05-15 OptiMOS TM Power-MOSFET , 40 V BSC014N04LSI Figure 3 Final Data Sheet Outline Tape (TDSON-8 FL ) 12 Rev. 2.4, 2020-05-15 OptiMOS TM Power-MOSFET , 40 V BSC014N04LSI Revision History BSC014N04LSI Revision: 2020-05-15, Rev. 2.4 Previous Revision Revision Date Subjects (major changes since last revision) 2.2 2016-05-04 Update footnotes and insert max values 2.3 2019-10-01 Update package drawings 2.4 2020-05-15 Update current rating Trademarks All referenced product or service names and trademarks are the property of their respective owners. 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The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 13 Rev. 2.4, 2020-05-15