BSC014N04LSTATMA1

BSC014N04LST MOSFET OptiMOSTMPower-MOSFET,40V TDSON-8FL(enlargedsourceinterconnection) 8 Features •Optimizedforsynchronousrectification •175°Crated •Verylowon-stateresistanceRDS(on) •100%avalanchetested •Superiorthermalresistance •N-channel,logiclevel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Highersolderjointreliabilityduetoenlargedsourceinterconnection Table1KeyPerformanceParameters 1 2 7 6 5 5 3 4 4 3 2 6 7 8 1 S1 8D S2 7D Parameter Value Unit S3 6D VDS 40 V G4 5D RDS(on),max 1.4 mΩ ID 205 A Qoss 54 nC Qg(0V..10V) 61 nC Type/OrderingCode Package BSC014N04LST TDSON-8 FL 1) Marking 014N04LT RelatedLinks - J-STD20 and JESD22 Final Data Sheet 1 Rev.2.3,2020-03-13 OptiMOSTMPower-MOSFET,40V BSC014N04LST TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.3,2020-03-13 OptiMOSTMPower-MOSFET,40V BSC014N04LST 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 205 145 176 124 33 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C,RthJA=50K/W2) - 820 A TC=25°C - - 50 A TC=25°C EAS - - 170 mJ ID=50A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 115 3.0 W TC=25°C TA=25°C,RthJA=50K/W2) Operating and storage temperature Tj,Tstg -55 - 175 °C - Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche current, single pulse IAS Avalanche energy, single pulse Continuous drain current1) Pulsed drain current3) 4) 5) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - 0.8 1.3 K/W - Thermal resistance, junction - case, top RthJC - - 20 K/W - Device on PCB, 6 cm2 cooling area2) RthJA - - 50 K/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information 5) The negative rating is for low duty cycle pulse occurrence. No continuous rating is implied Final Data Sheet 3 Rev.2.3,2020-03-13 OptiMOSTMPower-MOSFET,40V BSC014N04LST 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA - 2 V VDS=VGS,ID=250µA - 0.1 10 1 100 µA VDS=40V,VGS=0V,Tj=25°C VDS=40V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 1.5 1.1 1.9 1.4 mΩ VGS=4.5V,ID=50A VGS=10V,ID=50A Gate resistance1) RG 0.45 0.9 1.8 Ω - Transconductance gfs 120 230 - S |VDS|>2|ID|RDS(on)max,ID=50A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 40 - Gate threshold voltage VGS(th) 1.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance1) Values Min. Typ. Max. Ciss - 4300 6020 pF VGS=0V,VDS=20V,f=1MHz Coss - 1200 1680 pF VGS=0V,VDS=20V,f=1MHz Reverse transfer capacitance Crss - 100 200 pF VGS=0V,VDS=20V,f=1MHz Turn-on delay time td(on) - 8 - ns VDD=20V,VGS=10V,ID=50A, RG,ext,ext=1.6Ω Rise time tr - 9 - ns VDD=20V,VGS=10V,ID=50A, RG,ext,ext=1.6Ω Turn-off delay time td(off) - 35 - ns VDD=20V,VGS=10V,ID=50A, RG,ext,ext=1.6Ω Fall time tf - 7 - ns VDD=20V,VGS=10V,ID=50A, RG,ext,ext=1.6Ω Unit Note/TestCondition Output capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Gate charge at threshold Values Min. Typ. Max. Qgs - 11 - nC VDD=20V,ID=50A,VGS=0to10V Qg(th) - 6.9 - nC VDD=20V,ID=50A,VGS=0to10V Gate to drain charge Qgd - 9.8 14 nC VDD=20V,ID=50A,VGS=0to10V Switching charge Qsw - 14 - nC VDD=20V,ID=50A,VGS=0to10V Gate charge total Qg - 61 85 nC VDD=20V,ID=50A,VGS=0to10V Gate plateau voltage Vplateau - 2.5 - V VDD=20V,ID=50A,VGS=0to10V Gate charge total1) Qg - 31 44 nC VDD=20V,ID=50A,VGS=0to4.5V Gate charge total, sync. FET Qg(sync) - 24 - nC VDS=0.1V,VGS=0to4.5V Qoss - 54 76 nC VDD=20V,VGS=0V 1) 1) 1) Output charge 1) 2) Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.3,2020-03-13 OptiMOSTMPower-MOSFET,40V BSC014N04LST Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Values Unit Note/TestCondition 115 A TC=25°C - 820 A TC=25°C - 0.82 1 V VGS=0V,IF=50A,Tj=25°C trr - 32 64 ns VR=20V,IF=50A,diF/dt=400A/µs Qrr - 44 - nC VR=20V,IF=50A,diF/dt=400A/µs Min. Typ. Max. IS - - IS,pulse - VSD Reverse recovery time Reverse recovery charge Diode forward voltage 1) 1) Defined by design. Not subject to production test Final Data Sheet 5 Rev.2.3,2020-03-13 OptiMOSTMPower-MOSFET,40V BSC014N04LST 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 140 240 120 200 100 80 ID[A] Ptot[W] 160 120 60 80 40 40 20 0 0 25 50 75 100 125 150 175 0 200 0 25 50 75 TC[°C] 100 125 150 175 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 10 µs 102 1 µs 100 µs 100 0.5 1 ms 10 ms DC ZthJC[K/W] 0.2 ID[A] 101 100 0.1 10-1 0.05 0.02 0.01 single pulse 10-2 -1 10 10-2 10-1 100 101 102 10-3 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.3,2020-03-13 OptiMOSTMPower-MOSFET,40V BSC014N04LST Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 400 3.0 10 V 350 5V 4.5 V 2.8 V 4V 2.5 3.5 V 300 3.2 V 3V RDS(on)[mΩ] ID[A] 250 3V 200 150 2.0 3.2 V 3.5 V 1.5 4V 4.5 V 5V 2.8 V 100 10 V 1.0 50 0 0 1 0.5 2 0 10 20 VDS[V] 30 40 50 80 100 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 400 320 320 240 ID[A] gfs[S] 240 160 160 80 80 175 °C 25 °C 0 0 1 2 3 4 5 0 0 VGS[V] 40 60 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 20 gfs=f(ID);Tj=25°C 7 Rev.2.3,2020-03-13 OptiMOSTMPower-MOSFET,40V BSC014N04LST Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 3.00 2.5 2.75 max 2.50 2.0 typ 2.25 1.5 1.75 VGS(th)[V] RDS(on)[mΩ] 2.00 1.50 1.25 250 µA 1.0 1.00 0.75 0.5 0.50 0.25 0.00 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=50A;VGS=10V VGS(th)=f(Tj);VGS=VDS;ID=250µA Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 25 °C, max 175 °C 175 °C, max Ciss Coss 102 IF[A] C[pF] 103 Crss 2 101 10 101 0 10 20 30 40 100 0.00 0.25 VDS[V] 0.75 1.00 1.25 1.50 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.50 IF=f(VSD);parameter:Tj 8 Rev.2.3,2020-03-13 OptiMOSTMPower-MOSFET,40V BSC014N04LST Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 20 V 10 8V 25 °C 32 V 101 8 VGS[V] IAV[A] 100 °C 150 °C 6 4 2 100 100 101 102 103 tAV[µs] 0 0 20 40 60 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=50Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 46 44 42 VBR(DSS)[V] 40 38 36 34 32 30 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.3,2020-03-13 OptiMOSTMPower-MOSFET,40V BSC014N04LST 5PackageOutlines DOCUMENT NO. Z8B000193699 REVISION 03 DIMENSION A A1 b D D1 D2 E E1 E2 e L M MILLIMETERS MIN. MAX. 0.90 1.20 0.15 0.35 0.26 0.54 4.80 5.35 3.70 4.40 0.02 0.23 5.70 6.10 5.90 6.42 3.88 4.42 1.27 0.69 0.90 0.45 0.69 SCALE 10:1 0 1 2 3mm EUROPEAN PROJECTION ISSUE DATE 19.06.2019 Figure1OutlineTDSON-8FL,dimensionsinmm Final Data Sheet 10 Rev.2.3,2020-03-13 OptiMOSTMPower-MOSFET,40V BSC014N04LST PG-TDSON-8­FL: RecommenGHd BoDrdpads & Apertures Figure 2 Final Data Sheet Outline Boardpads (TDSON-8 FL) 11 Rev.2.3,2020-03-13 OptiMOS TM Power-MOSFET , 40 V BSC014N04LST Figure 3 Final Data Sheet Outline Tape (TDSON-8 FL ) 12 Rev. 2.3, 2020-03-13 OptiMOS TM Power-MOSFET , 40 V BSC014N04LST Revision History BSC014N04LST Revision: 2020-03-13, Rev. 2.3 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2017-03-01 Release of final version 2.1 2017-10-30 Insert footnote under Vgs 2.2 2020-02-07 Update package drawings and Qrr 2.3 2020-03-13 Update current rating Trademarks All referenced product or service names and trademarks are the property of their respective owners. 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The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 13 Rev. 2.3, 2020-03-13