BSC014N06NSSCATMA1

BSC014N06NSSC MOSFET OptiMOSTMPower-Transistor,60V PG-WSON-8 Features •Dual-sidecooledpackagewithlowestJunction-topthermalresistance •175°Crated •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Highersolderjointreliabilityduetoenlargedsourceinterconnection tab 5 4 3 2 6 7 8 1 Productvalidation Drain Pin 5-8 FullyqualifiedaccordingtoJEDECforIndustrialApplications Gate Pin 4 Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 1.4 mΩ ID 261 A QOSS 100 nC QG(0V..10V) 89 nC Source Pin 1-3, tab Type/OrderingCode Package BSC014N06NSSC PG-WSON-8 Final Data Sheet 1 Marking RelatedLinks 014N06SC - Rev.2.1,2022-10-06 OptiMOSTMPower-Transistor,60V BSC014N06NSSC TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.1,2022-10-06 OptiMOSTMPower-Transistor,60V BSC014N06NSSC 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 261 184 33 A VGS=10V,TC=25°C1) VGS=10V,TC=100°C VGS=10V,TC=25°C,RthJA=50K/W2) - 1044 A TC=25°C - - 580 mJ ID=50A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 188 3.0 W TC=25°C TA=25°C,RthJA=50K/W2) Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current3) ID,pulse - Avalanche energy, single pulse4) EAS Gate source voltage 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - 0.5 0.8 K/W - Thermal resistance, junction - case, top RthJC - 0.35 0.72 K/W - Device on PCB, 6 cm2 cooling area2) RthJA - - 50 K/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher Tcase please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.1,2022-10-06 OptiMOSTMPower-Transistor,60V BSC014N06NSSC 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 2.8 3.3 V VDS=VGS,ID=120µA - 0.5 10 1 100 µA VDS=60V,VGS=0V,Tj=25°C VDS=60V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 1.2 1.6 1.4 2.2 mΩ VGS=10V,ID=50A VGS=6V,ID=12.5A Gate resistance RG - 2 3 Ω - Transconductance gfs 80 160 - S |VDS|>2|ID|RDS(on)max,ID=50A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 60 - Gate threshold voltage VGS(th) 2.1 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics1) Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 6500 8125 pF VGS=0V,VDS=30V,f=1MHz Output capacitance Coss - 1500 1875 pF VGS=0V,VDS=30V,f=1MHz Reverse transfer capacitance Crss - 59 118 pF VGS=0V,VDS=30V,f=1MHz Turn-on delay time td(on) - 23 - ns VDD=30V,VGS=10V,ID=30A, RG,ext,ext=2Ω Rise time tr - 10 - ns VDD=30V,VGS=10V,ID=30A, RG,ext,ext=2Ω Turn-off delay time td(off) - 43 - ns VDD=30V,VGS=10V,ID=30A, RG,ext,ext=2Ω Fall time tf - 11 - ns VDD=30V,VGS=10V,ID=30A, RG,ext,ext=2Ω Unit Note/TestCondition Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Gate charge at threshold Values Min. Typ. Max. Qgs - 28 - nC VDD=30V,ID=50A,VGS=0to10V Qg(th) - 18 - nC VDD=30V,ID=50A,VGS=0to10V Gate to drain charge Qgd - 16 21 nC VDD=30V,ID=50A,VGS=0to10V Switching charge Qsw - 26 - nC VDD=30V,ID=50A,VGS=0to10V Gate charge total Qg - 89 104 nC VDD=30V,ID=50A,VGS=0to10V Gate plateau voltage Vplateau - 4.3 - V VDD=30V,ID=50A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 78 - nC VDS=0.1V,VGS=0to10V Qoss - 100 125 nC VDD=30V,VGS=0V 1) 1) 1) Output charge 1) 2) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.1,2022-10-06 OptiMOSTMPower-Transistor,60V BSC014N06NSSC Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Values Unit Note/TestCondition 134 A TC=25°C - 1044 A TC=25°C - 0.83 1.2 V VGS=0V,IF=50A,Tj=25°C trr - 52 83 ns VR=30V,IF=50A,diF/dt=100A/µs Qrr - 139 - nC VR=30V,IF=50A,diF/dt=100A/µs Min. Typ. Max. IS - - IS,pulse - VSD Reverse recovery time Reverse recovery charge Diode forward voltage 1) 1) Defined by design. Not subject to production test. Final Data Sheet 5 Rev.2.1,2022-10-06 OptiMOSTMPower-Transistor,60V BSC014N06NSSC 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 200 280 240 160 200 120 ID[A] Ptot[W] 160 120 80 80 40 40 0 0 25 50 75 100 125 150 175 0 200 0 25 50 75 TC[°C] 100 125 150 Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 4 200 100 10 0.5 103 1 µs 10 µs 2 0.2 100 µs 10 10 10 ms 101 -1 0.1 ZthJC[K/W] 1 ms ID[A] 175 TC[°C] DC 100 0.05 0.02 0.01 10-2 single pulse 10-1 10-2 10-1 100 101 102 10-3 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.1,2022-10-06 OptiMOSTMPower-Transistor,60V BSC014N06NSSC Diagram5:Typ.outputcharacteristics 400 Diagram6:Typ.drain-sourceonresistance 4 10 V 7V 360 4.5 V 6V 5.5 V 5V 320 3 280 RDS(on)[mΩ] ID[A] 240 200 5V 160 2 6V 7V 8V 120 10 V 1 80 40 0 0.0 0.5 1.0 1.5 0 2.0 0 50 100 150 VDS[V] 200 250 300 350 400 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 400 250 360 320 200 280 150 gfs[S] ID[A] 240 200 160 100 120 80 50 175 °C 40 0 0 2 25 °C 4 6 0 0 VGS[V] 40 60 80 100 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 20 gfs=f(ID);Tj=25°C 7 Rev.2.1,2022-10-06 OptiMOSTMPower-Transistor,60V BSC014N06NSSC Diagram10:Typ.gatethresholdvoltage 2.0 5 1.6 4 1.2 3 VGS(th)[V] RDS(on)(normalizedto25°C) Diagram9:Drain-sourceon-stateresistance 0.8 0.4 1200 µA 120 µA 2 1 0.0 -80 -40 0 40 80 120 160 0 -60 200 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj),ID=50A,VGS=10V VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 25 °C, max 175 °C 175 °C, max Ciss Coss 102 IF[A] C[pF] 103 102 101 Crss 101 0 20 40 60 100 0.0 VDS[V] 1.0 1.5 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.5 IF=f(VSD);parameter:Tj 8 Rev.2.1,2022-10-06 OptiMOSTMPower-Transistor,60V BSC014N06NSSC Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 30 V 10 12 V 25 °C 100 °C 48 V 8 VGS[V] IAV[A] 150 °C 101 6 4 2 100 100 101 102 103 tAV[µs] 0 0 20 40 60 80 100 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=50Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 70 66 VBR(DSS)[V] 62 58 54 50 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.1,2022-10-06 OptiMOSTMPower-Transistor,60V BSC014N06NSSC 5PackageOutlines DIMENSION A A1 b c D D1 D2 E E1 E2 e L1 L2 aaa ddd DOCUMENT NO. Z8B00184589 MILLIMETERS MIN. MAX. 0.75 0.05 0.35 0.45 0.203 4.95 5.05 4.11 4.31 3.03 5.95 6.05 3.66 3.86 4.11 1.27 0.675 0.775 0.625 0.825 0.05 0.10 REVISION 03 SCALE 10:1 0 1 2mm EUROPEAN PROJECTION ISSUE DATE 03.06.2019 Figure1OutlinePG-WSON-8,dimensionsinmm Final Data Sheet 10 Rev.2.1,2022-10-06 OptiMOSTMPower-Transistor,60V BSC014N06NSSC RevisionHistory BSC014N06NSSC Revision:2022-10-06,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2019-11-12 Release of final version 2.1 2022-10-06 Update "Features" Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2022InfineonTechnologiesAG AllRightsReserved. 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Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.1,2022-10-06