BSC014N06NSTATMA1

BSC014N06NST MOSFET OptiMOSTMPower-Transistor,60V TDSON-8FL(enlargedsourceinterconnection) 8 Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •175°Crated •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Highersolderjointreliabilityduetoenlargedsourceinterconnection Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 1.45 mΩ ID 257 A QOSS 100 nC QG(0V..10V) 89 nC Type/OrderingCode Package BSC014N06NST PG-TDSON-8 FL 1) Marking 014N06NT 1 2 7 6 5 5 3 4 4 3 2 6 7 8 1 S1 8D S2 7D S3 6D G4 5D RelatedLinks - J-STD20 and JESD22 Final Data Sheet 1 Rev.2.1,2020-06-17 OptiMOSTMPower-Transistor,60V BSC014N06NST TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.1,2020-06-17 OptiMOSTMPower-Transistor,60V BSC014N06NST 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 257 182 31 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TA=25°C,RthJA=50K/W2) - 1028 A TC=25°C - - 580 mJ ID=50A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 188 3.0 W TC=25°C TA=25°C,RthJA=50K/W2) Operating and storage temperature Tj,Tstg -55 - 175 °C - Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current3) ID,pulse - Avalanche energy, single pulse4) EAS Gate source voltage 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - 0.5 0.8 K/W - Thermal resistance, junction - case, top RthJC - - 20 K/W - Device on PCB, 6 cm2 cooling area2) RthJA - - 50 K/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.1,2020-06-17 OptiMOSTMPower-Transistor,60V BSC014N06NST 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 2.8 3.3 V VDS=VGS,ID=120µA - 0.5 10 1 100 µA VDS=60V,VGS=0V,Tj=25°C VDS=60V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 1.2 1.6 1.45 2.2 mΩ VGS=10V,ID=50A VGS=6V,ID=12.5A Gate resistance1) RG - 2 3 Ω - Transconductance gfs 75 150 - S |VDS|>2|ID|RDS(on)max,ID=50A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 60 - Gate threshold voltage VGS(th) 2.1 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics1) Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 6500 8125 pF VGS=0V,VDS=30V,f=1MHz Output capacitance Coss - 1500 1875 pF VGS=0V,VDS=30V,f=1MHz Reverse transfer capacitance Crss - 59 118 pF VGS=0V,VDS=30V,f=1MHz Turn-on delay time td(on) - 23 - ns VDD=30V,VGS=10V,ID=30A, RG,ext=2Ω Rise time tr - 10 - ns VDD=30V,VGS=10V,ID=30A, RG,ext=2Ω Turn-off delay time td(off) - 43 - ns VDD=30V,VGS=10V,ID=30A, RG,ext=2Ω Fall time tf - 11 - ns VDD=30V,VGS=10V,ID=30A, RG,ext=2Ω Unit Note/TestCondition Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Gate charge at threshold Values Min. Typ. Max. Qgs - 28 - nC VDD=30V,ID=50A,VGS=0to10V Qg(th) - 18 - nC VDD=30V,ID=50A,VGS=0to10V Gate to drain charge Qgd - 16 21 nC VDD=30V,ID=50A,VGS=0to10V Switching charge Qsw - 26 - nC VDD=30V,ID=50A,VGS=0to10V Gate charge total Qg - 89 104 nC VDD=30V,ID=50A,VGS=0to10V Gate plateau voltage Vplateau - 4.3 - V VDD=30V,ID=50A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 78 - nC VDS=0.1V,VGS=0to10V Qoss - 100 125 nC VDD=30V,VGS=0V 1) 1) 1) Output charge 1) 2) Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.1,2020-06-17 OptiMOSTMPower-Transistor,60V BSC014N06NST Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Values Unit Note/TestCondition 156 A TC=25°C - 1028 A TC=25°C - 0.84 1.2 V VGS=0V,IF=50A,Tj=25°C trr - 52 83 ns VR=30V,IF=50A,diF/dt=100A/µs Qrr - 139 - nC VR=30V,IF=50A,diF/dt=100A/µs Min. Typ. Max. IS - - IS,pulse - VSD Reverse recovery time Reverse recovery charge Diode forward voltage 1) 1) Defined by design. Not subject to production test Final Data Sheet 5 Rev.2.1,2020-06-17 OptiMOSTMPower-Transistor,60V BSC014N06NST 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 200 280 180 240 160 200 140 160 ID[A] Ptot[W] 120 100 120 80 60 80 40 40 20 0 0 25 50 75 100 125 150 175 0 200 0 25 50 75 TC[°C] 100 125 150 175 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 4 100 10 0.5 103 1 µs 0.2 10 µs 10 ID[A] 1 ms 10 0.1 100 µs 10 ms 101 -1 ZthJC[K/W] 2 DC 100 0.05 0.02 0.01 10-2 single pulse 10-1 10-2 10-1 100 101 102 10-3 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.1,2020-06-17 OptiMOSTMPower-Transistor,60V BSC014N06NST Diagram5:Typ.outputcharacteristics 400 Diagram6:Typ.drain-sourceonresistance 4 10 V 7V 360 5V 5.5 V 6V 5.5 V 320 3 280 RDS(on)[mΩ] ID[A] 240 200 5V 160 2 6V 7V 10 V 120 1 80 40 0 0.0 0.5 1.0 1.5 0 2.0 0 50 100 150 VDS[V] 200 250 300 350 400 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 400 250 360 320 200 280 150 gfs[S] ID[A] 240 200 160 100 120 80 50 175 °C 40 0 0 2 25 °C 4 6 0 0 VGS[V] 40 60 80 100 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 20 gfs=f(ID);Tj=25°C 7 Rev.2.1,2020-06-17 OptiMOSTMPower-Transistor,60V BSC014N06NST Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 3.0 5 2.5 4 3 max VGS(th)[V] RDS(on)[mΩ] 2.0 1.5 typ 1200 µA 120 µA 2 1.0 1 0.5 0.0 -60 -20 20 60 100 140 0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=50A;VGS=10V VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 25 °C, max 175 °C 175 °C, max Ciss Coss IF[A] C[pF] 103 102 102 Crss 101 0 20 40 60 101 0.00 0.25 VDS[V] 0.75 1.00 1.25 1.50 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.50 IF=f(VSD);parameter:Tj 8 Rev.2.1,2020-06-17 OptiMOSTMPower-Transistor,60V BSC014N06NST Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 30 V 10 12 V 25 °C 8 VGS[V] IAV[A] 100 °C 150 °C 101 48 V 6 4 2 100 100 101 102 103 tAV[µs] 0 0 20 40 60 80 100 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=50Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 70 66 VBR(DSS)[V] 62 58 54 50 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.1,2020-06-17 OptiMOSTMPower-Transistor,60V BSC014N06NST 5PackageOutlines Figure1OutlinePG-TDSON-8FL,dimensionsinmm/inches Final Data Sheet 10 Rev.2.1,2020-06-17 OptiMOSTMPower-Transistor,60V BSC014N06NST   Figure2OutlineFootprint(TDSON-8FL) Final Data Sheet 11 Rev.2.1,2020-06-17 OptiMOSTMPower-Transistor,60V BSC014N06NST Figure3OutlineTape(TDSON-8FL) Final Data Sheet 12 Rev.2.1,2020-06-17 OptiMOSTMPower-Transistor,60V BSC014N06NST RevisionHistory BSC014N06NST Revision:2020-06-17,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2017-03-01 Release of final version 2.1 2020-06-17 Update current rating Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2020InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 13 Rev.2.1,2020-06-17