BSC016N06NST

BSC016N06NST MOSFET OptiMOSTMPower-MOSFET,60V TDSON-8FL(enlargedsourceinterconnection) 8 Features •Optimizedforsynchronousrectification •175°Crated •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Highersolderjointreliabilityduetoenlargedsourceinterconnection Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 1.6 mΩ ID 100 A QOSS 81 nC QG(0V..10V) 71 nC Type/OrderingCode Package BSC016N06NST TDSON-8 FL 1) Marking 016N06NT 1 2 7 6 5 5 3 4 4 3 2 6 7 8 1 S1 8D S2 7D S3 6D G4 5D RelatedLinks - J-STD20 and JESD22 Final Data Sheet 1 Rev.2.1,2019-10-22 OptiMOSTMPower-MOSFET,60V BSC016N06NST TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.1,2019-10-22 OptiMOSTMPower-MOSFET,60V BSC016N06NST 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 100 100 31 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TA=25°C,RthJA=50K/W1) - 400 A TC=25°C - - 380 mJ ID=50A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 167 3.0 W TC=25°C TA=25°C,RthJA=50K/W Operating and storage temperature Tj,Tstg -55 - 175 °C - Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse3) EAS Gate source voltage 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - 0.5 0.9 K/W - Thermal resistance, junction - case, top RthJC - - 20 K/W - Device on PCB, 6 cm2 cooling area1) RthJA - - 50 K/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See Diagram 3 for more detailed information 3) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.1,2019-10-22 OptiMOSTMPower-MOSFET,60V BSC016N06NST 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 2.8 3.3 V VDS=VGS,ID=95µA - 0.5 10 1 100 µA VDS=60V,VGS=0V,Tj=25°C VDS=60V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 1.4 1.9 1.6 2.4 mΩ VGS=10V,ID=50A VGS=6V,ID=12.5A Gate resistance1) RG - 1.9 2.9 Ω - Transconductance gfs 70 140 - S |VDS|>2|ID|RDS(on)max,ID=50A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 60 - Gate threshold voltage VGS(th) 2.1 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics1) Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss 3900 5200 6500 pF VGS=0V,VDS=30V,f=1MHz Output capacitance Coss 900 1200 1500 pF VGS=0V,VDS=30V,f=1MHz Reverse transfer capacitance Crss 14 48 96 pF VGS=0V,VDS=30V,f=1MHz Turn-on delay time td(on) - 19 38 ns VDD=30V,VGS=10V,ID=30A, RG,ext=1.6Ω Rise time tr - 9 18 ns VDD=30V,VGS=10V,ID=30A, RG,ext=1.6Ω Turn-off delay time td(off) - 35 70 ns VDD=30V,VGS=10V,ID=30A, RG,ext=1.6Ω Fall time tf - 9 18 ns VDD=30V,VGS=10V,ID=30A, RG,ext=1.6Ω Unit Note/TestCondition Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge1) 1) Gate charge at threshold Qgs 16 22 30 nC VDD=30V,ID=50A,VGS=0to10V Qg(th) 10 14 19 nC VDD=30V,ID=50A,VGS=0to10V 13 20 nC VDD=30V,ID=50A,VGS=0to10V Qsw 14 21 30 nC VDD=30V,ID=50A,VGS=0to10V 1) Qg 58 71 95 nC VDD=30V,ID=50A,VGS=0to10V Vplateau 3.7 4.3 4.9 V VDD=30V,ID=50A,VGS=0to10V Qg(sync) 49 62 86 nC VDS=0.1V,VGS=0to10V Qoss 60 81 102 nC VDD=30V,VGS=0V Gate charge total Gate plateau voltage1) 1) Gate charge total, sync. FET 2) Max. 8.8 Switching charge 1) Typ. Qgd Gate to drain charge Output charge Min. 1) 1) 1) Values Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.1,2019-10-22 OptiMOSTMPower-MOSFET,60V BSC016N06NST Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) Values Unit Note/TestCondition 100 A TC=25°C - 400 A TC=25°C - 0.9 1.2 V VGS=0V,IF=50A,Tj=25°C trr 24 61 98 ns VR=30V,IF=50A,diF/dt=100A/µs Qrr 39 78 156 nC VR=30V,IF=50A,diF/dt=100A/µs Min. Typ. Max. IS - - IS,pulse - VSD Defined by design. Not subject to production test Final Data Sheet 5 Rev.2.1,2019-10-22 OptiMOSTMPower-MOSFET,60V BSC016N06NST 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 180 120 160 100 140 80 100 ID[A] Ptot[W] 120 80 60 60 40 40 20 20 0 0 25 50 75 100 125 150 175 0 200 0 25 50 75 TC[°C] 100 125 150 175 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 10 µs 102 100 100 µs 0.5 ZthJC[K/W] ID[A] 1 ms 10 ms DC 1 10 0.2 10 0.1 -1 0.05 0.02 0.01 100 10-1 10-1 10-2 100 101 102 10-3 single pulse 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.1,2019-10-22 OptiMOSTMPower-MOSFET,60V BSC016N06NST Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 400 10 V 350 5V 3.0 6V 8V 300 5.5 V 2.5 5.5 V RDS(on)[mΩ] ID[A] 250 200 150 6V 2.0 8V 1.5 5V 10 V 100 1.0 50 0 0 1 0.5 2 0 50 100 150 VDS[V] 200 250 300 350 400 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 200 320 160 240 120 ID[A] gfs[S] 400 160 80 80 40 175 °C 0 0 1 2 3 4 25 °C 5 6 0 0 VGS[V] 40 60 80 100 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 20 gfs=f(ID);Tj=25°C 7 Rev.2.1,2019-10-22 OptiMOSTMPower-MOSFET,60V BSC016N06NST Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 3.5 4.0 3.5 3.0 3.0 2.5 950 µA 2.0 max 1.5 VGS(th)[V] RDS(on)[mΩ] 2.5 typ 95 µA 2.0 1.5 1.0 1.0 0.5 0.5 0.0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=50A;VGS=10V VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 175 °C Ciss Coss 102 IF[A] C[pF] 103 102 101 Crss 101 0 10 20 30 40 50 60 100 0.0 VDS[V] 1.0 1.5 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.5 IF=f(VSD);parameter:Tj 8 Rev.2.1,2019-10-22 OptiMOSTMPower-MOSFET,60V BSC016N06NST Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 30 V 10 12 V 25 °C 8 150 °C VGS[V] IAV[A] 100 °C 48 V 101 6 4 2 100 100 101 102 103 tAV[µs] 0 0 20 40 60 80 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=50Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 70 68 66 64 VBR(DSS)[V] 62 60 58 56 54 52 50 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.1,2019-10-22 OptiMOSTMPower-MOSFET,60V BSC016N06NST 5PackageOutlines DOCUMENT NO. Z8B000193699 REVISION 03 DIMENSION A A1 b D D1 D2 E E1 E2 e L M MILLIMETERS MIN. MAX. 0.90 1.20 0.15 0.35 0.26 0.54 4.80 5.35 3.70 4.40 0.02 0.23 5.70 6.10 5.90 6.42 3.88 4.42 1.27 0.69 0.90 0.45 0.69 SCALE 10:1 0 1 2 3mm EUROPEAN PROJECTION ISSUE DATE 19.06.2019 Figure1OutlineTDSON-8FL,dimensionsinmm Final Data Sheet 10 Rev.2.1,2019-10-22 OptiMOSTMPower-MOSFET,60V BSC016N06NST Figure2OutlineTape(TDSON-8FL) Final Data Sheet 11 Rev.2.1,2019-10-22 OptiMOSTMPower-MOSFET,60V BSC016N06NST PG-TDSON-8­FL: RecommenGHd BoDrdpads & Apertures Figure 3 Final Data Sheet Outline Boardpads (TDSON-8 FL) 12 Rev.2.1,2019-10-22 OptiMOS TM Power-MOSFET , 60 V BSC016N06NST Revision History BSC016N06NST Revision: 2019-10-22, Rev. 2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2017-03-01 Release of final version 2.1 2019-10-22 Update package drawings Trademarks All referenced product or service names and trademarks are the property of their respective owners. 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The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 13 Rev. 2.1, 2019-10-22