BSC026N04LS

BSC026N04LS MOSFET OptiMOSTMPower-MOSFET,40V SuperSO8 8 Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Value Unit VDS 40 V RDS(on),max 2.6 mΩ ID 119 A QOSS 28 nC QG(0V..10V) 32 nC Type/OrderingCode Package BSC026N04LS PG-TDSON-8 1) 5 6 2 Marking 026N04LS 3 6 5 4 1 Table1KeyPerformanceParameters Parameter 7 3 2 4 7 8 1 S1 8D S2 7D S3 6D G4 5D RelatedLinks - J-STD20 and JESD22 Final Data Sheet 1 Rev.2.3,2020-08-18 OptiMOSTMPower-MOSFET,40V BSC026N04LS TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.3,2020-08-18 OptiMOSTMPower-MOSFET,40V BSC026N04LS 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 119 75 101 64 23 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C,RthJA=50K/W2) - 476 A TC=25°C - - 50 mJ ID=50A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 63 2.5 W TC=25°C TA=25°C,RthJA=50K/W2) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage Continuous drain current1) Pulsed drain current3) 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - 1.2 2 K/W - Thermal resistance, junction - case, top RthJC - - 20 K/W - Device on PCB, 6 cm2 cooling area2) RthJA - - 50 K/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.3,2020-08-18 OptiMOSTMPower-MOSFET,40V BSC026N04LS 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA - 2 V VDS=VGS,ID=250µA - 0.1 10 1 100 µA VDS=40V,VGS=0V,Tj=25°C VDS=40V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 2.1 2.6 2.6 3.6 mΩ VGS=10V,ID=50A VGS=4.5V,ID=50A Gate resistance1) RG - 0.9 1.8 Ω - Transconductance gfs 85 170 - S |VDS|>2|ID|RDS(on)max,ID=50A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 40 - Gate threshold voltage VGS(th) 1.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance1) Values Min. Typ. Max. Ciss - 2300 3220 pF VGS=0V,VDS=20V,f=1MHz Coss - 640 900 pF VGS=0V,VDS=20V,f=1MHz Reverse transfer capacitance Crss - 52 104 pF VGS=0V,VDS=20V,f=1MHz Turn-on delay time td(on) - 5 - ns VDD=20V,VGS=10V,ID=50A, RG,ext=1.6Ω Rise time tr - 4 - ns VDD=20V,VGS=10V,ID=50A, RG,ext=1.6Ω Turn-off delay time td(off) - 37 - ns VDD=20V,VGS=10V,ID=50A, RG,ext=1.6Ω Fall time tf - 4 - ns VDD=20V,VGS=10V,ID=50A, RG,ext=1.6Ω Unit Note/TestCondition Output capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Gate charge at threshold Values Min. Typ. Max. Qgs - 6.0 - nC VDD=20V,ID=50A,VGS=0to10V Qg(th) - 3.6 - nC VDD=20V,ID=50A,VGS=0to10V Gate to drain charge Qgd - 5.2 7.3 nC VDD=20V,ID=50A,VGS=0to10V Switching charge Qsw - 7.5 - nC VDD=20V,ID=50A,VGS=0to10V Gate charge total Qg - 32 45 nC VDD=20V,ID=50A,VGS=0to10V Gate plateau voltage Vplateau - 2.6 - V VDD=20V,ID=50A,VGS=0to10V Gate charge total1) Qg - 16 22 nC VDD=20V,ID=50A,VGS=0to4.5V Gate charge total, sync. FET Qg(sync) - 13 - nC VDS=0.1V,VGS=0to4.5V Qoss - 28 39 nC VDD=20V,VGS=0V 1) 1) 1) Output charge 1) 2) Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.3,2020-08-18 OptiMOSTMPower-MOSFET,40V BSC026N04LS Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Values Unit Note/TestCondition 63 A TC=25°C - 476 A TC=25°C - 0.86 1 V VGS=0V,IF=50A,Tj=25°C trr - 24 48 ns VR=20V,IF=50A,diF/dt=400A/µs Qrr - 57 - nC VR=20V,IF=50A,diF/dt=400A/µs Min. Typ. Max. IS - - IS,pulse - VSD Reverse recovery time Reverse recovery charge Diode forward voltage 1) 1) Defined by design. Not subject to production test Final Data Sheet 5 Rev.2.3,2020-08-18 OptiMOSTMPower-MOSFET,40V BSC026N04LS 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 70 125 60 100 75 40 ID[A] Ptot[W] 50 30 50 20 25 10 0 0 40 80 120 0 160 0 20 40 60 TC[°C] 80 100 120 140 160 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 10 µs 102 0.5 100 100 µs 0.2 1 ms 10 0.1 ZthJC[K/W] 1 ID[A] 10 ms DC 0 10 10-1 0.05 0.02 0.01 single pulse 10-2 -1 10 10-2 10-1 100 101 102 10-3 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.3,2020-08-18 OptiMOSTMPower-MOSFET,40V BSC026N04LS Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 400 6 10 V 2.8 V 350 5 300 3.2 V 3.5 V 4.5 V 5V 4 4V 250 RDS(on)[mΩ] 3.5 V ID[A] 3V 200 150 3.2 V 100 3V 50 2.8 V 4V 3 4.5 V 5V 10 V 2 1 0 0 1 0 2 0 50 100 150 VDS[V] 200 250 300 350 400 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 250 320 200 240 150 ID[A] gfs[S] 400 160 100 80 50 150 °C 0 0 1 25 °C 2 3 4 5 0 0 VGS[V] 40 60 80 100 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 20 gfs=f(ID);Tj=25°C 7 Rev.2.3,2020-08-18 OptiMOSTMPower-MOSFET,40V BSC026N04LS Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 5 2.5 4 2.0 max 1.5 VGS(th)[V] RDS(on)[mΩ] 3 typ 2 1 250 µA 1.0 0.5 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=50A;VGS=10V VGS(th)=f(Tj);VGS=VDS;ID=250µA Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 25 °C, max 150 °C 150 °C, max Ciss 103 102 IF[A] C[pF] Coss 102 101 101 Crss 0 10 20 30 40 100 0.0 VDS[V] 1.0 1.5 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.5 IF=f(VSD);parameter:Tj 8 Rev.2.3,2020-08-18 OptiMOSTMPower-MOSFET,40V BSC026N04LS Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 20 V 10 8V 32 V 8 101 VGS[V] IAV[A] 25 °C 100 °C 6 125 °C 4 2 100 100 101 102 103 tAV[µs] 0 0 10 20 30 40 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=50Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 46 44 42 VBR(DSS)[V] 40 38 36 34 32 30 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.3,2020-08-18 OptiMOSTMPower-MOSFET,40V BSC026N04LS 5PackageOutlines DOCUMENT NO. Z8B00003332 REVISION 07 DIMENSION A A1 b D D1 D2 E E1 E2 e L M MILLIMETERS MIN. MAX. 0.90 1.20 0.15 0.35 0.34 0.54 4.80 5.35 3.90 4.40 0.03 0.23 5.70 6.10 5.90 6.42 3.88 4.31 1.27 0.45 0.71 0.45 0.69 SCALE 10:1 0 1 2 3mm EUROPEAN PROJECTION ISSUE DATE 06.06.2019 Figure1OutlinePG-TDSON-8,dimensionsinmm Final Data Sheet 10 Rev.2.3,2020-08-18 OptiMOSTMPower-MOSFET,40V BSC026N04LS PG-TDSON-8: RecommenGHd BoDrdpads & Apertures 1.905 1.905 1.27 3x 0.6 1.27 3x copper Figure 2 Final Data Sheet 1.6 0.2 1.27 3x 0.825 2.863 0.5 0.925 2.863 1.27 3x 1.905 0.875 1.5 0.75 0.2 2.9 4.455 3.325 0.8 0.5 1.5 0.4 1.905 stencil apertures solder mask all dimensions in mm Outline Boardpads (TDSON-8), dimensions in mm 11 Rev.2.3,2020-08-18 OptiMOS TM Power-MOSFET , 40 V BSC026N04LS Dimension in mm Figure 3 Final Data Sheet Outline Tape (TDSON-8) 12 Rev. 2.3, 2020-08-18 OptiMOS TM Power-MOSFET , 40 V BSC026N04LS Revision History BSC026N04LS Revision: 2020-08-18, Rev. 2.3 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2016-06-09 Update footnotes and max values 2.2 2020-03-26 Update package drawings 2.3 2020-08-18 Update current rating Trademarks All referenced product or service names and trademarks are the property of their respective owners. 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The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 13 Rev. 2.3, 2020-08-18