BSC026NE2LS5ATMA1

BSC026NE2LS5 MOSFET OptiMOSTM5Power-MOSFET,25V SuperSO8 8 Features •Optimizedforhighperformancebuckconverters •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Value Unit VDS 25 V RDS(on),max 2.6 mΩ ID 82 A QOSS 7.6 nC QG(0V..4.5V) 5.6 nC Type/OrderingCode Package BSC026NE2LS5 PG-TDSON-8 1) 5 6 2 Marking 26NE2LS5 3 6 5 4 1 Table1KeyPerformanceParameters Parameter 7 3 2 4 7 8 1 S1 8D S2 7D S3 6D G4 5D RelatedLinks - J-STD20 and JESD22 Final Data Sheet 1 Rev.2.1,2020-10-23 OptiMOSTM5Power-MOSFET,25V BSC026NE2LS5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Final Data Sheet 2 Rev.2.1,2020-10-23 OptiMOSTM5Power-MOSFET,25V BSC026NE2LS5 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 82 52 66 42 24 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C,RthJA=50K/W2) - 328 A TC=25°C - - 35 A TC=25°C EAS - - 14 mJ ID=35A,RGS=25Ω Gate source voltage VGS -16 - 16 V - Power dissipation Ptot - - 29 2.5 W TC=25°C TA=25°C,RthJA=50K/W2) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche current, single pulse IAS Avalanche energy, single pulse Continuous drain current1) Pulsed drain current3) 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - - 4.3 K/W - Thermal resistance, junction - case, top RthJC - - 20 K/W - Device on PCB, 6 cm2 cooling area2) RthJA - - 50 K/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information 4) See figure 13 for more detailed information Final Data Sheet 3 Rev.2.1,2020-10-23 OptiMOSTM5Power-MOSFET,25V BSC026NE2LS5 3Electricalcharacteristics at Tj=25°C, unless otherwise specified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 1.6 2 V VDS=VGS,ID=250µA - 0.1 10 1 100 µA VDS=20V,VGS=0V,Tj=25°C VDS=20V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=16V,VDS=0V Drain-source on-state resistance RDS(on) - 3.0 2.2 4.0 2.6 mΩ VGS=4.5V,ID=30A VGS=10V,ID=30A Gate resistance RG - 0.7 1.2 Ω - Transconductance gfs 55 110 - S |VDS|>2|ID|RDS(on)max,ID=30A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 25 - Gate threshold voltage VGS(th) 1.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance1) Values Min. Typ. Max. Ciss - 780 1100 pF VGS=0V,VDS=12V,f=1MHz Output capacitance1) Coss - 390 530 pF VGS=0V,VDS=12V,f=1MHz Reverse transfer capacitance Crss - 38 - pF VGS=0V,VDS=12V,f=1MHz Turn-on delay time td(on) - 3 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω Rise time tr - 3 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω Turn-off delay time td(off) - 13 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω Fall time tf - 2 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω Unit Note/TestCondition Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 2.0 - nC VDD=12V,ID=30A,VGS=0to4.5V Gate charge at threshold Qg(th) - 1.2 - nC VDD=12V,ID=30A,VGS=0to4.5V Gate to drain charge Qgd - 1.4 - nC VDD=12V,ID=30A,VGS=0to4.5V Switching charge Qsw - 2.2 - nC VDD=12V,ID=30A,VGS=0to4.5V Gate charge total Qg - 5.6 7.8 nC VDD=12V,ID=30A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.6 - V VDD=12V,ID=30A,VGS=0to4.5V Gate charge total1) Qg - 12 16 nC VDD=12V,ID=30A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 4.8 - nC VDS=0.1V,VGS=0to4.5V Output charge Qoss - 7.6 - nC VDD=12V,VGS=0V 1) 1) 2) Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.1,2020-10-23 OptiMOSTM5Power-MOSFET,25V BSC026NE2LS5 Table7Reversediode Parameter Symbol Diode continuous forward current Values Unit Note/TestCondition 29 A TC=25°C - 328 A TC=25°C - 0.84 1 V VGS=0V,IF=30A,Tj=25°C - 7 - nC VR=12V,IF=IS,diF/dt=400A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery charge Qrr Final Data Sheet 5 Rev.2.1,2020-10-23 OptiMOSTM5Power-MOSFET,25V BSC026NE2LS5 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 35 100 30 80 60 20 ID[A] Ptot[W] 25 15 40 10 20 5 0 0 40 80 120 0 160 0 20 40 60 TC[°C] 80 100 120 140 160 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 10 µs 102 0.5 100 µs 100 0.2 1 ID[A] 1 ms 100 10 ms DC 0.1 ZthJC[K/W] 10 0.05 0.02 0.01 10-1 single pulse -1 10 10-2 10-1 100 101 102 10-2 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.1,2020-10-23 OptiMOSTM5Power-MOSFET,25V BSC026NE2LS5 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 320 6 10 V 5 V 5 4.5 V 3.2 V 240 4V 4 RDS(on)[mΩ] ID[A] 3.5 V 160 3.2 V 3.5 V 4V 4.5 V 3 5V 7V 8V 10 V 2 3V 80 1 2.8 V 0 0 1 2 0 3 0 10 20 VDS[V] 30 40 50 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 320 400 350 240 300 gfs[S] ID[A] 250 160 200 150 80 100 150 °C 50 25 °C 0 0 1 2 3 4 5 0 0 VGS[V] 160 240 320 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 80 gfs=f(ID);Tj=25°C 7 Rev.2.1,2020-10-23 OptiMOSTM5Power-MOSFET,25V BSC026NE2LS5 Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 5 2.5 4 2.0 3 1.5 VGS(th)[V] RDS(on)[mΩ] 250 µA typ 2 1 1.0 0.5 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=30A;VGS=10V VGS(th)=f(Tj);VGS=VDS;ID=250µA Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 25 °C, max 150 °C 150 °C, max Ciss 103 102 102 101 IF[A] C[pF] Coss 101 Crss 0 5 10 15 20 25 100 0.00 0.25 VDS[V] 0.75 1.00 1.25 1.50 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.50 IF=f(VSD);parameter:Tj 8 Rev.2.1,2020-10-23 OptiMOSTM5Power-MOSFET,25V BSC026NE2LS5 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 12 V 10 5V 20 V 25 °C 1 10 8 VGS[V] IAV[A] 100 °C 125 °C 100 6 4 2 10-1 100 101 102 103 tAV[µs] 0 0 4 8 12 16 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=30Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 28 27 26 VBR(DSS)[V] 25 24 23 22 21 20 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.1,2020-10-23 OptiMOSTM5Power-MOSFET,25V BSC026NE2LS5 5PackageOutlines   Figure1OutlinePG-TDSON-8,dimensionsinmm Final Data Sheet 10 Rev.2.1,2020-10-23 OptiMOSTM5Power-MOSFET,25V BSC026NE2LS5 Dimension in mm Figure2OutlineTape(TDSON-8) Final Data Sheet 11 Rev.2.1,2020-10-23 OptiMOSTM5Power-MOSFET,25V BSC026NE2LS5 RevisionHistory BSC026NE2LS5 Revision:2020-10-23,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2015-03-10 Release of final version 2.1 2020-10-23 Update Max Current Rating Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 12 Rev.2.1,2020-10-23