BSC028N06LS3G

BSC028N06LS3G MOSFET OptiMOSTM3Power-Transistor,60V SuperSO8 8 Features •Idealforhighfrequencyswitchingandsync.rec. •OptimizedtechnologyforDC/DCconverters •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Superiorthermalresistance •N-channel,logiclevel •100%avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Halogen-freeaccordingtoIEC61249-2-21 7 5 6 4 1 2 Table1KeyPerformanceParameters 3 6 5 3 2 4 7 8 1 S1 8D S2 7D Parameter Value Unit S3 6D VDS 60 V G4 5D RDS(on),max 2.8 mΩ ID 174 A Type/OrderingCode Package BSC028N06LS3 G PG-TDSON-8 1) Marking 028N06LS RelatedLinks - J-STD20 and JESD22 Final Data Sheet 1 Rev.2.3,2020-09-14 OptiMOSTM3Power-Transistor,60V BSC028N06LS3G TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.3,2020-09-14 OptiMOSTM3Power-Transistor,60V BSC028N06LS3G 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 174 110 133 84 23 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C,RthJA=50K/W2) - 696 A TC=25°C - - 298 mJ ID=50A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 139 2.5 W TC=25°C TA=25°C,RthJA=50K/W2) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage Continuous drain current1) Pulsed drain current3) 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - - 0.9 K/W - Device on PCB, minimal footprint RthJA - - 62 K/W - Device on PCB, 6 cm2 cooling area2) RthJA - - 50 K/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.3,2020-09-14 OptiMOSTM3Power-Transistor,60V BSC028N06LS3G 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 1.7 2.2 V VDS=VGS,ID=93µA - 0.1 10 1 100 µA VDS=60V,VGS=0V,Tj=25°C VDS=60V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 3.2 2.3 4.8 2.8 mΩ VGS=4.5V,ID=25A VGS=10V,ID=50A Gate resistance RG - 1.3 - Ω - Transconductance gfs 60 120 - S |VDS|>2|ID|RDS(on)max,ID=50A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 60 - Gate threshold voltage VGS(th) 1.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance1) Values Min. Typ. Max. Ciss - 10000 13000 pF VGS=0V,VDS=30V,f=1MHz Output capacitance1) Coss - 1700 2300 pF VGS=0V,VDS=30V,f=1MHz Reverse transfer capacitance Crss - 70 - pF VGS=0V,VDS=30V,f=1MHz Turn-on delay time td(on) - 19 - ns VDD=30V,VGS=10V,ID=30A, RG=3.3Ω Rise time tr - 17 - ns VDD=30V,VGS=10V,ID=30A, RG=3.3Ω Turn-off delay time td(off) - 77 - ns VDD=30V,VGS=10V,ID=30A, RG=3.3Ω Fall time tf - 19 - ns VDD=30V,VGS=10V,ID=30A, RG=3.3Ω Unit Note/TestCondition Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 31 - nC VDD=30V,ID=50A,VGS=0to4.5V Gate charge at threshold Qg(th) - 17 - nC VDD=30V,ID=50A,VGS=0to4.5V Gate to drain charge Qgd - 10 - nC VDD=30V,ID=50A,VGS=0to4.5V Switching charge Qsw - 24 - nC VDD=30V,ID=50A,VGS=0to4.5V Gate charge total Qg - 59 79 nC VDD=30V,ID=50A,VGS=0to4.5V Gate plateau voltage Vplateau - 3.1 - V VDD=30V,ID=50A,VGS=0to4.5V Gate charge total1) Qg - 132 175 nC VDD=30V,ID=50A,VGS=0to10V Qoss - 83 110 nC VDD=30V,VGS=0V 1) 1) Output charge 1) 2) Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.3,2020-09-14 OptiMOSTM3Power-Transistor,60V BSC028N06LS3G Table7Reversediode Parameter Symbol Diode continuous forward current Values Unit Note/TestCondition 106 A TC=25°C - 696 A TC=25°C - 0.8 1.2 V VGS=0V,IF=50A,Tj=25°C trr - 47 - ns VR=30V,IF=30A,diF/dt=100A/µs Qrr - 58 - nC VR=30V,IF=30A,diF/dt=100A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery time Reverse recovery charge Final Data Sheet 5 Rev.2.3,2020-09-14 OptiMOSTM3Power-Transistor,60V BSC028N06LS3G 4Electricalcharacteristicsdiagrams Diagram2:Draincurrent 160 200 140 175 120 150 100 125 ID[A] Ptot[W] Diagram1:Powerdissipation 80 100 60 75 40 50 20 25 0 0 50 100 150 0 200 0 20 40 60 TC[°C] 80 100 120 140 160 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 100 10 1 µs 10 µs 0.5 100 µs 2 10 0.2 ZthJC[K/W] ID[A] 1 ms 101 10 ms 10-1 0.1 0.05 DC 100 0.02 0.01 single pulse -1 10 10-1 100 101 102 10 -2 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.3,2020-09-14 OptiMOSTM3Power-Transistor,60V BSC028N06LS3G Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 400 10 5V 350 9 4.5 V 10 V 8 300 3V 7 RDS(on)[mΩ] ID[A] 250 4V 200 150 3.2 V 3.5 V 6 4V 5 4.5 V 4 5V 3 100 3.5 V 50 3.2 V 6V 2 0 1 3V 2.8 V 0 1 2 10 V 0 3 0 100 VDS[V] 200 300 400 120 160 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 300 250 200 200 ID[A] gfs[S] 150 100 100 50 150 °C 0 0 1 2 25 °C 3 4 5 0 0 VGS[V] 80 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 40 gfs=f(ID);Tj=25°C 7 Rev.2.3,2020-09-14 OptiMOSTM3Power-Transistor,60V BSC028N06LS3G Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 5 2.5 4 2.0 930 µA max 1.5 VGS(th)[V] RDS(on)[mΩ] 3 typ 2 1 93 µA 1.0 0.5 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=50A;VGS=10V VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 5 103 10 25 °C 25 °C, max 150 °C 150 °C, max 104 Ciss Coss IF[A] C[pF] 102 3 10 101 102 Crss 101 0 20 40 60 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 8 Rev.2.3,2020-09-14 OptiMOSTM3Power-Transistor,60V BSC028N06LS3G Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 30 V 10 12 V VGS[V] 125 °C IAV[A] 48 V 8 25 °C 100 °C 101 6 4 2 100 100 101 102 103 tAV[µs] 0 0 40 80 120 160 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=50Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 70 VBR(DSS)[V] 60 50 40 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.3,2020-09-14 OptiMOSTM3Power-Transistor,60V BSC028N06LS3G 5PackageOutlines Figure1OutlinePG-TDSON-8,dimensionsinmm/inches Final Data Sheet 10 Rev.2.3,2020-09-14 OptiMOSTM3Power-Transistor,60V BSC028N06LS3G RevisionHistory BSC028N06LS3 G Revision:2020-09-14,Rev.2.3 Previous Revision Revision Date Subjects (major changes since last revision) 2.3 2020-09-14 Update current rating and footnotes Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.3,2020-09-14