BSC030N08NS5ATMA1

BSC030N08NS5 MOSFET OptiMOSTM5Power-Transistor,80V SuperSO8 8 Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 7 5 6 4 1 2 3 6 5 3 2 4 7 8 1 Table1KeyPerformanceParameters Parameter Value Unit S1 8D VDS 80 V S2 7D RDS(on),max 3.0 mΩ S3 6D ID 161 A G4 5D Qoss 73 nC QG(0V..10V) 61 nC Type/OrderingCode Package BSC030N08NS5 PG-TDSON-8 1) Marking 030N08NS RelatedLinks - J-STD20 and JESD22 Final Data Sheet 1 Rev.2.4,2020-11-20 OptiMOSTM5Power-Transistor,80V BSC030N08NS5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.4,2020-11-20 OptiMOSTM5Power-Transistor,80V BSC030N08NS5 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 161 100 22 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TC=25°C,RthJA=50K/W2) - 644 A TC=25°C - - 250 mJ ID=50A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 139 2.5 W TC=25°C TA=25°C,RthJA=50K/W2) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current3) ID,pulse - Avalanche energy, single pulse4) EAS Gate source voltage 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - 0.5 0.9 K/W - Thermal resistance, junction - case, top RthJC - - 20 K/W - Device on PCB, 6 cm2 cooling area2) RthJA - - 50 K/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual environmental conditions 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information 4) See figure 13 for more detailed information Final Data Sheet 3 Rev.2.4,2020-11-20 OptiMOSTM5Power-Transistor,80V BSC030N08NS5 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3 3.8 V VDS=VGS,ID=95µA - 0.1 10 1 100 µA VDS=80V,VGS=0V,Tj=25°C VDS=80V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 2.6 3.4 3.0 4.5 mΩ VGS=10V,ID=50A VGS=6V,ID=25A Gate resistance1) RG - 1.6 2.4 Ω - Transconductance gfs 55 110 - S |VDS|>2|ID|RDS(on)max,ID=50A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 80 - Gate threshold voltage VGS(th) 2.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance1) Values Min. Typ. Max. Ciss - 4300 5600 pF VGS=0V,VDS=40V,f=1MHz Coss - 700 910 pF VGS=0V,VDS=40V,f=1MHz Reverse transfer capacitance Crss - 32 56 pF VGS=0V,VDS=40V,f=1MHz Turn-on delay time td(on) - 20 - ns VDD=40V,VGS=10V,ID=50A, RG,ext=3Ω Rise time tr - 12 - ns VDD=40V,VGS=10V,ID=50A, RG,ext=3Ω Turn-off delay time td(off) - 43 - ns VDD=40V,VGS=10V,ID=50A, RG,ext=3Ω Fall time tf - 13 - ns VDD=40V,VGS=10V,ID=50A, RG,ext=3Ω Unit Note/TestCondition Output capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Gate charge at threshold Values Min. Typ. Max. Qgs - 20 - nC VDD=40V,ID=50A,VGS=0to10V Qg(th) - 12 - nC VDD=40V,ID=50A,VGS=0to10V Gate to drain charge Qgd - 13 19.5 nC VDD=40V,ID=50A,VGS=0to10V Switching charge Qsw - 21 - nC VDD=40V,ID=50A,VGS=0to10V Gate charge total Qg - 61 76 nC VDD=40V,ID=50A,VGS=0to10V Gate plateau voltage Vplateau - 4.6 - V VDD=40V,ID=50A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 52 - nC VDS=0.1V,VGS=0to10V Qoss - 73 97.0 nC VDD=40V,VGS=0V 1) 1) 1) Output charge 1) 2) Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.4,2020-11-20 OptiMOSTM5Power-Transistor,80V BSC030N08NS5 Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) Values Unit Note/TestCondition 126 A TC=25°C - 644 A TC=25°C - 0.9 1.1 V VGS=0V,IF=50A,Tj=25°C trr - 54 108 ns VR=40V,IF=50A,diF/dt=100A/µs Qrr - 94 188 nC VR=40V,IF=50A,diF/dt=100A/µs Min. Typ. Max. IS - - IS,pulse - VSD Defined by design. Not subject to production test Final Data Sheet 5 Rev.2.4,2020-11-20 OptiMOSTM5Power-Transistor,80V BSC030N08NS5 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 160 175 140 150 120 125 100 ID[A] Ptot[W] 100 80 75 60 50 40 25 20 0 0 25 50 75 100 125 150 0 175 0 20 40 60 TC[°C] 80 100 120 140 160 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 100 10 1 µs 5 10 µs 2 10 100 µs 2 1 ms 1 10 ZthJC[K/W] ID[A] 10 ms DC 100 1 -1 10 5 2 -1 10 1 10-2 10-1 100 101 102 10-2 single pulse 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.4,2020-11-20 OptiMOSTM5Power-Transistor,80V BSC030N08NS5 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 400 8 5.5 V 5V 360 10 V 320 6V 7 7V 6 280 6V 5 RDS(on)[mΩ] ID[A] 240 200 160 5.5 V 4 7V 3 10 V 120 2 80 5V 1 40 0 0.0 0.5 1.0 1.5 2.0 2.5 0 3.0 0 50 100 150 VDS[V] 200 250 300 350 400 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 400 160 360 320 120 280 gfs[S] ID[A] 240 200 80 160 120 40 80 40 150 °C 0 0 2 25 °C 4 6 8 0 0 VGS[V] 40 60 80 100 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 20 gfs=f(ID);Tj=25°C 7 Rev.2.4,2020-11-20 OptiMOSTM5Power-Transistor,80V BSC030N08NS5 Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 6 5 5 4 4 950 µA 3 VGS(th)[V] RDS(on)[mΩ] max 3 typ 95 µA 2 2 1 1 0 -60 -20 20 60 100 140 0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=50A;VGS=10V VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 25 °C. max 150 °C 150 °C. max Ciss 103 102 IF[A] C[pF] Coss 102 101 Crss 101 0 10 20 30 40 50 60 70 80 100 0.00 0.25 VDS[V] 0.75 1.00 1.25 1.50 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.50 IF=f(VSD);parameter:Tj 8 Rev.2.4,2020-11-20 OptiMOSTM5Power-Transistor,80V BSC030N08NS5 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 9 64 V 8 100 °C 125 °C 40 V 7 25 °C 16 V VGS[V] IAV[A] 6 101 5 4 3 2 1 100 100 101 102 103 tAV[µs] 0 0 10 20 30 40 50 60 70 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=50Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 86 84 VBR(DSS)[V] 82 80 78 76 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.4,2020-11-20 OptiMOSTM5Power-Transistor,80V BSC030N08NS5 5PackageOutlines DOCUMENT NO. Z8B00003332 REVISION 07 DIMENSION A A1 b D D1 D2 E E1 E2 e L M MILLIMETERS MIN. MAX. 0.90 1.20 0.15 0.35 0.34 0.54 4.80 5.35 3.90 4.40 0.03 0.23 5.70 6.10 5.90 6.42 3.88 4.31 1.27 0.45 0.71 0.45 0.69 SCALE 10:1 0 1 2 3mm EUROPEAN PROJECTION ISSUE DATE 06.06.2019 Figure1OutlinePG-TDSON-8,dimensionsinmm Final Data Sheet 10 Rev.2.4,2020-11-20 OptiMOSTM5Power-Transistor,80V BSC030N08NS5 PG-TDSON-8: RecommenGHd BoDrdpads & Apertures 1.905 1.905 1.27 3x 0.6 1.27 3x copper Figure 2 Final Data Sheet 1.6 0.2 1.27 3x 0.825 2.863 0.5 0.925 2.863 1.27 3x 1.905 0.875 1.5 0.75 0.2 2.9 4.455 3.325 0.8 0.5 1.5 0.4 1.905 stencil apertures solder mask all dimensions in mm Outline Boardpads (TDSON-8), dimensions in mm 11 Rev.2.4,2020-11-20 OptiMOS TM5 Power-Transistor , 80 V BSC030N08NS5 Dimension in mm Figure 3 Final Data Sheet Outline Tape (TDSON-8) 12 Rev. 2.4, 2020-11-20 OptiMOS TM5 Power-Transistor , 80 V BSC030N08NS5 Revision History BSC030N08NS5 Revision: 2020-11-20, Rev. 2.4 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2014-07-04 Release of final version 2.1 2014-10-14 Rev. 2.1 - Update SOA diagram 2.2 2014-11-10 Rev. 2.2 - Add footnote for Rg and Ciss 2.3 2019-10-31 Update package drawings 2.4 2020-11-20 Update Id Max current rating Trademarks All referenced product or service names and trademarks are the property of their respective owners. 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The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 13 Rev. 2.4, 2020-11-20