BSC034N06NS

BSC034N06NS MOSFET OptiMOSTMPower-Transistor,60V SuperSO8 8 Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 7 5 6 4 1 2 3 6 5 3 2 4 7 8 1 Table1KeyPerformanceParameters Parameter Value Unit S1 8D VDS 60 V S2 7D RDS(on),max 3.4 mΩ S3 6D ID 112 A G4 5D QOSS 37 nC QG(0V..10V) 33 nC Type/OrderingCode Package BSC034N06NS PG-TDSON-8 1) Marking 034N06NS RelatedLinks - J-STD20 and JESD22 Final Data Sheet 1 Rev.2.3,2020-05-06 OptiMOSTMPower-Transistor,60V BSC034N06NS TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.3,2020-05-06 OptiMOSTMPower-Transistor,60V BSC034N06NS 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 112 71 21 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TC=25°C,RthJA=50K/W2) - 448 A TC=25°C - - 71 mJ ID=50A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 74 2.5 W TC=25°C TA=25°C,RthJA=50K/W2) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current3) ID,pulse - Avalanche energy, single pulse4) EAS Gate source voltage 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - 1.0 1.7 K/W - Thermal resistance, junction - case, top RthJC - - 20 K/W - Device on PCB, 6 cm2 cooling area2) RthJA - - 50 K/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information 4) See figure 13 for more detailed information Final Data Sheet 3 Rev.2.3,2020-05-06 OptiMOSTMPower-Transistor,60V BSC034N06NS 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 2.8 3.3 V VDS=VGS,ID=41µA - 0.1 10 1 100 µA VDS=60V,VGS=0V,Tj=25°C VDS=60V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 2.8 4.0 3.4 5.1 mΩ VGS=10V,ID=50A VGS=6V,ID=12.5A Gate resistance1) RG - 1.3 2.0 Ω - Transconductance gfs 46 93 - S |VDS|>2|ID|RDS(on)max,ID=50A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 60 - Gate threshold voltage VGS(th) 2.1 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance1) Values Min. Typ. Max. Ciss - 2400 3000 pF VGS=0V,VDS=30V,f=1MHz Coss - 560 700 pF VGS=0V,VDS=30V,f=1MHz Reverse transfer capacitance Crss - 27 54 pF VGS=0V,VDS=30V,f=1MHz Turn-on delay time td(on) - 9 - ns VDD=30V,VGS=10V,ID=50A, RG,ext,ext=1.6Ω Rise time tr - 5 - ns VDD=30V,VGS=10V,ID=50A, RG,ext,ext=1.6Ω Turn-off delay time td(off) - 19 - ns VDD=30V,VGS=10V,ID=50A, RG,ext,ext=1.6Ω Fall time tf - 5 - ns VDD=30V,VGS=10V,ID=50A, RG,ext,ext=1.6Ω Unit Note/TestCondition Output capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Gate charge at threshold Values Min. Typ. Max. Qgs - 11 - nC VDD=30V,ID=50A,VGS=0to10V Qg(th) - 6.7 - nC VDD=30V,ID=50A,VGS=0to10V Gate to drain charge Qgd - 6.5 9.2 nC VDD=30V,ID=50A,VGS=0to10V Switching charge Qsw - 11 - nC VDD=30V,ID=50A,VGS=0to10V Gate charge total Qg - 33 41 nC VDD=30V,ID=50A,VGS=0to10V Gate plateau voltage Vplateau - 4.7 - V VDD=30V,ID=50A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 29 - nC VDS=0.1V,VGS=0to10V Qoss - 37 47 nC VDD=30V,VGS=0V 1) 1) 1) Output charge 1) 2) Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.3,2020-05-06 OptiMOSTMPower-Transistor,60V BSC034N06NS Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Values Unit Note/TestCondition 67 A TC=25°C - 448 A TC=25°C - 0.9 1.2 V VGS=0V,IF=50A,Tj=25°C trr - 49 78 ns VR=30V,IF=50A,diF/dt=100A/µs Qrr - 65 - nC VR=30V,IF=50A,diF/dt=100A/µs Min. Typ. Max. IS - - IS,pulse - VSD Reverse recovery time Reverse recovery charge Diode forward voltage 1) 1) Defined by design. Not subject to production test Final Data Sheet 5 Rev.2.3,2020-05-06 OptiMOSTMPower-Transistor,60V BSC034N06NS 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 80 120 100 60 ID[A] Ptot[W] 80 40 60 40 20 20 0 0 25 50 75 100 125 150 0 175 0 20 40 60 TC[°C] 80 100 120 140 160 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 2 10 10 µs 100 100 µs 0.5 0.2 101 ZthJC[K/W] ID[A] 1 ms 10 ms DC 100 0.1 10 -1 0.05 0.02 0.01 single pulse 10-2 -1 10 10-2 10-1 100 101 102 10-3 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.3,2020-05-06 OptiMOSTMPower-Transistor,60V BSC034N06NS Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 400 7 5V 360 6 10 V 5.5 V 320 7V 6V 5 280 RDS(on)[mΩ] ID[A] 240 6V 200 160 5.5 V 120 4 7V 3 10 V 2 80 5V 1 40 0 0.0 0.5 1.0 1.5 0 2.0 0 50 100 150 VDS[V] 200 250 300 350 400 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 400 160 360 320 120 280 gfs[S] ID[A] 240 200 80 160 120 40 80 40 0 150 °C 0 2 25 °C 4 6 8 0 0 VGS[V] 40 60 80 100 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 20 gfs=f(ID);Tj=25°C 7 Rev.2.3,2020-05-06 OptiMOSTMPower-Transistor,60V BSC034N06NS Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 7.0 5 6.5 6.0 4 5.5 5.0 3 max 4.0 VGS(th)[V] RDS(on)[mΩ] 4.5 3.5 3.0 typ 410 µA 41 µA 2 2.5 2.0 1.5 1 1.0 0.5 0.0 -60 -20 20 60 100 140 0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=50A;VGS=10V VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 25 °C, max 150 °C 150 °C, max Ciss IF[A] 102 C[pF] 103 Coss 102 101 Crss 1 10 0 20 40 60 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 8 Rev.2.3,2020-05-06 OptiMOSTMPower-Transistor,60V BSC034N06NS Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 30 V 10 12 V 25 °C 100 °C 125 °C 8 IAV[A] VGS[V] 101 48 V 100 6 4 2 10-1 100 101 102 103 tAV[µs] 0 0 10 20 30 40 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=50Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 70 66 VBR(DSS)[V] 62 58 54 50 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.3,2020-05-06 OptiMOSTMPower-Transistor,60V BSC034N06NS 5PackageOutlines DOCUMENT NO. Z8B00003332 REVISION 07 DIMENSION A A1 b D D1 D2 E E1 E2 e L M MILLIMETERS MIN. MAX. 0.90 1.20 0.15 0.35 0.34 0.54 4.80 5.35 3.90 4.40 0.03 0.23 5.70 6.10 5.90 6.42 3.88 4.31 1.27 0.45 0.71 0.45 0.69 SCALE 10:1 0 1 2 3mm EUROPEAN PROJECTION ISSUE DATE 06.06.2019 Figure1OutlinePG-TDSON-8,dimensionsinmm Final Data Sheet 10 Rev.2.3,2020-05-06 OptiMOSTMPower-Transistor,60V BSC034N06NS PG-TDSON-8: RecommenGHd BoDrdpads & Apertures 1.905 1.905 1.27 3x 0.6 1.27 3x copper Figure 2 Final Data Sheet 1.6 0.2 1.27 3x 0.825 2.863 0.5 0.925 2.863 1.27 3x 1.905 0.875 1.5 0.75 0.2 2.9 4.455 3.325 0.8 0.5 1.5 0.4 1.905 stencil apertures solder mask all dimensions in mm Outline Boardpads (TDSON-8), dimensions in mm 11 Rev.2.3,2020-05-06 OptiMOS TM Power-Transistor , 60 V BSC034N06NS Dimension in mm Figure 3 Final Data Sheet Outline Tape (TDSON-8) 12 Rev. 2.3, 2020-05-06 OptiMOS TM Power-Transistor , 60 V BSC034N06NS Revision History BSC034N06NS Revision: 2020-05-06, Rev. 2.3 Previous Revision Revision Date Subjects (major changes since last revision) 2.2 2019-10-31 Update package drawings. Addition RthJC_typ and Qoss_max. 2.3 2020-05-06 Update current rating Trademarks All referenced product or service names and trademarks are the property of their respective owners. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 81726 München, Germany © 2020 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 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If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 13 Rev. 2.3, 2020-05-06