BSC035N10NS5ATMA1

BSC035N10NS5 MOSFET OptiMOSTM5Power-Transistor,100V PG-TDSON-8 8 Features 7 5 6 6 7 5 •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Pin 1 8 4 2 3 3 2 4 1 Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 3.5 mΩ ID 155 A Qoss 91 nC QG(0V..10V) 70 nC Drain Pin 5-8 Gate Pin 4 Source Pin 1-3 *1: Internal body diode Type/OrderingCode Package BSC035N10NS5 PG-TDSON-8 1) *1 Marking RelatedLinks 035N10NS - J-STD20 and JESD22 Final Data Sheet 1 Rev.2.5,2022-09-05 OptiMOSTM5Power-Transistor,100V BSC035N10NS5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Final Data Sheet 2 Rev.2.5,2022-09-05 OptiMOSTM5Power-Transistor,100V BSC035N10NS5 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 155 98 19 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TA=25°C,RthJA=50K/W2) - 620 A TC=25°C - - 398 mJ ID=50A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 156 2.5 W TC=25°C TA=25°C,RthJA=50K/W3) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current3) ID,pulse - Avalanche energy, single pulse4) EAS Gate source voltage 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - 0.5 0.8 K/W - Thermal resistance, junction - case, top RthJC - - 20 K/W - Device on PCB, 6 cm2 cooling area2) RthJA - - 50 K/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.5,2022-09-05 OptiMOSTM5Power-Transistor,100V BSC035N10NS5 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3.0 3.8 V VDS=VGS,ID=115µA - 0.1 10 1 100 µA VDS=100V,VGS=0V,Tj=25°C VDS=100V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 2.9 3.5 3.5 4.7 mΩ VGS=10V,ID=50A VGS=6V,ID=25A Gate resistance RG - 1.5 2.3 Ω - Transconductance gfs 65 130 - S |VDS|>2|ID|RDS(on)max,ID=50A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 100 - Gate threshold voltage VGS(th) 2.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 5000 6500 pF VGS=0V,VDS=50V,f=1MHz Coss - 770 1000 pF VGS=0V,VDS=50V,f=1MHz Reverse transfer capacitance Crss - 34 60 pF VGS=0V,VDS=50V,f=1MHz Turn-on delay time td(on) - 22 - ns VDD=50V,VGS=10V,ID=50A, RG,ext=3Ω Rise time tr - 13 - ns VDD=50V,VGS=10V,ID=50A, RG,ext=3Ω Turn-off delay time td(off) - 47 - ns VDD=50V,VGS=10V,ID=50A, RG,ext=3Ω Fall time tf - 15 - ns VDD=50V,VGS=10V,ID=50A, RG,ext=3Ω Unit Note/TestCondition Output capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Gate charge at threshold Values Min. Typ. Max. Qgs - 22 - nC VDD=50V,ID=50A,VGS=0to10V Qg(th) - 14 - nC VDD=50V,ID=50A,VGS=0to10V Gate to drain charge Qgd - 14 21 nC VDD=50V,ID=50A,VGS=0to10V Switching charge Qsw - 23 - nC VDD=50V,ID=50A,VGS=0to10V Gate charge total Qg - 70 87 nC VDD=50V,ID=50A,VGS=0to10V Gate plateau voltage Vplateau - 4.5 - V VDD=50V,ID=50A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 61 - nC VDS=0.1V,VGS=0to10V Qoss - 91 121 nC VDD=50V,VGS=0V 1) 1) 1) Output charge 1) 2) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.5,2022-09-05 OptiMOSTM5Power-Transistor,100V BSC035N10NS5 Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) Values Unit Note/TestCondition 117 A TC=25°C - 620 A TC=25°C - 0.82 1.1 V VGS=0V,IF=50A,Tj=25°C trr - 62 124 ns VR=50V,IF=50A,diF/dt=100A/µs Qrr - 122 244 nC VR=50V,IF=50A,diF/dt=100A/µs Min. Typ. Max. IS - - IS,pulse - VSD Defined by design. Not subject to production test. Final Data Sheet 5 Rev.2.5,2022-09-05 OptiMOSTM5Power-Transistor,100V BSC035N10NS5 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 180 160 160 140 140 120 120 100 ID[A] Ptot[W] 100 80 80 60 60 40 40 20 20 0 0 25 50 75 100 125 150 0 175 0 25 50 75 TC[°C] 100 125 150 175 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 100 10 1 µs 0.5 10 µs 102 0.2 100 µs 10 -1 0.1 ID[A] 10 ZthJC[K/W] 1 ms 1 10 ms DC 100 0.05 0.02 0.01 10-2 single pulse -1 10 10-2 10-1 100 101 102 103 10-3 10-6 10-5 VDS[V] 10-3 10-2 10-1 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-4 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.5,2022-09-05 OptiMOSTM5Power-Transistor,100V BSC035N10NS5 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 700 10 10 V 600 7V 8 500 RDS(on)[mΩ] ID[A] 400 6V 300 200 6 5V 5.5 V 6V 4 7V 5.5 V 10 V 2 100 0 5V 0 1 2 3 4 0 5 0 40 80 120 VDS[V] 160 200 240 280 320 ID[A] ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 700 160 600 120 500 25 °C 150 °C ID[A] gfs[S] 400 80 300 200 40 100 0 0 2 4 6 8 10 0 0 VGS[V] 40 60 80 100 ID[A] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 20 gfs=f(ID);Tj=25°C 7 Rev.2.5,2022-09-05 OptiMOSTM5Power-Transistor,100V BSC035N10NS5 Diagram9:Drain-sourceonresistance Diagram10:Typ.gatethresholdvoltage 7 4.0 3.5 6 5 VGS(th)[V] 4 typ 3 115 µA 2.5 max RDS(on)[mΩ] 1150 µA 3.0 2.0 1.5 2 1.0 1 0.5 0 -75 -50 -25 0 25 50 75 100 125 150 0.0 -75 175 -50 -25 0 Tj[°C] 25 50 75 100 125 150 175 Tj[°C] RDS(on)=f(Tj),ID=50A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 25 °C, max 150 °C 150 °C, max Ciss 103 102 IF[A] C[pF] Coss 102 101 Crss 101 0 20 40 60 80 100 100 0.0 VDS[V] 1.0 1.5 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.5 IF=f(VSD);parameter:Tj 8 Rev.2.5,2022-09-05 OptiMOSTM5Power-Transistor,100V BSC035N10NS5 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 9 25 °C 8 100 °C 50 V 7 101 125 °C IAV[A] VGS[V] 6 80 V 20 V 5 4 0 10 3 2 1 10-1 100 101 102 103 tAV[µs] 0 0 10 20 30 40 50 60 70 80 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=50Apulsed;parameter:VDD Diagram15:Min.drain-sourcebreakdownvoltage Diagram Gate charge waveforms 108 106 VBR(DSS)[V] 104 102 100 98 96 94 -75 -50 -25 0 25 50 75 100 125 150 175 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.5,2022-09-05 OptiMOSTM5Power-Transistor,100V BSC035N10NS5 5PackageOutlines PACKAGE - GROUP NUMBER: DIMENSIONS A b c D D1 D2 E E1 e L L1 PG-TDSON-8-U08 MILLIMETERS MIN. MAX. 0.90 1.20 0.34 0.54 0.15 0.35 4.80 5.35 3.90 4.40 0.00 0.22 5.70 6.10 4.05 4.25 1.27 0.45 0.65 0.45 0.65 Figure1OutlinePG-TDSON-8,dimensionsinmm Final Data Sheet 10 Rev.2.5,2022-09-05 OptiMOSTM5Power-Transistor,100V BSC035N10NS5 PG-TDSON-8: RecommenGHd BoDrdpads & Apertures 1.905 1.905 1.27 3x 0.6 1.27 3x copper Figure 2 Final Data Sheet 1.6 0.2 1.27 3x 0.825 2.863 0.5 0.925 2.863 1.27 3x 1.905 0.875 1.5 0.75 0.2 2.9 4.455 3.325 0.8 0.5 1.5 0.4 1.905 stencil apertures solder mask all dimensions in mm Outline Boardpads (TDSON-8), dimensions in mm 11 Rev.2.5,2022-09-05 OptiMOS TM 5 Power-Transistor , 100 V BSC035N10NS5 Revision History BSC035N10NS5 Revision: 2022-09-05, Rev. 2.5 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2014-12-17 Release of final version 2.1 2016-09-07 Update Avalanche Energy 2.2 2021-02-09 Update current rating 2.3 2021-05-10 Update package drawings 2.4 2021-05-11 Fix naming mismatch 2.5 2022-09-05 Update outline drawing and footnotes Trademarks All referenced product or service names and trademarks are the property of their respective owners. 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The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 12 Rev. 2.5, 2022-09-05