BSC037N08NS5

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTM5Power-Transistor,80V BSC037N08NS5 DataSheet Rev.2.0 Final PowerManagement&Multimarket OptiMOSTM5Power-Transistor,80V BSC037N08NS5 1Description SuperSO8 8 Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 7 5 6 4 1 2 3 6 5 3 2 4 7 8 1 Table1KeyPerformanceParameters Parameter Value Unit S1 8D VDS 80 V S2 7D RDS(on),max 3.7 mΩ S3 6D ID 100 A G4 5D Qoss 56 nC QG(0V..10V) 46 nC Type/OrderingCode Package BSC037N08NS5 PG-TDSON-8 1) Marking 037N08NS RelatedLinks - J-STD20 and JESD22 Final Data Sheet 2 Rev.2.0,2014-12-17 OptiMOSTM5Power-Transistor,80V BSC037N08NS5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Final Data Sheet 3 Rev.2.0,2014-12-17 OptiMOSTM5Power-Transistor,80V BSC037N08NS5 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 100 84 22 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TC=25°C,RthJA=50K/W1) - 400 A TC=25°C - - 140 mJ ID=50A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 114 2.5 W TC=25°C TA=25°C,RthJA=50K/W1) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage Pulsed drain current2) 3) 3Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - 0.7 1.1 K/W - Thermal resistance, junction - case, top RthJC - - 20 K/W - Device on PCB, 6 cm2 cooling area1) RthJA - - 50 K/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Final Data Sheet 4 Rev.2.0,2014-12-17 OptiMOSTM5Power-Transistor,80V BSC037N08NS5 4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3 3.8 V VDS=VGS,ID=72µA - 0.1 10 1 100 µA VDS=80V,VGS=0V,Tj=25°C VDS=80V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 3.4 4.4 3.7 5.3 mΩ VGS=10V,ID=50A VGS=6V,ID=25A Gate resistance1) RG - 1.3 2.0 Ω - Transconductance gfs 47 94 - S |VDS|>2|ID|RDS(on)max,ID=50A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 80 - Gate threshold voltage VGS(th) 2.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Values Min. Typ. Max. Ciss - 3200 4200 pF VGS=0V,VDS=40V,f=1MHz Output capacitance Coss - 530 690 pF VGS=0V,VDS=40V,f=1MHz Reverse transfer capacitance1) Crss - 25 44 pF VGS=0V,VDS=40V,f=1MHz Turn-on delay time td(on) - 14 - ns VDD=40V,VGS=10V,ID=50A, RG,ext=3Ω Rise time tr - 10 - ns VDD=40V,VGS=10V,ID=50A, RG,ext=3Ω Turn-off delay time td(off) - 26 - ns VDD=40V,VGS=10V,ID=50A, RG,ext=3Ω Fall time tf - 7 - ns VDD=40V,VGS=10V,ID=50A, RG,ext=3Ω Input capacitance1) 1) 1) Defined by design. Not subject to production test Final Data Sheet 5 Rev.2.0,2014-12-17 OptiMOSTM5Power-Transistor,80V BSC037N08NS5 Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Gate charge at threshold Values Unit Note/TestCondition - nC VDD=40V,ID=50A,VGS=0to10V 9.0 - nC VDD=40V,ID=50A,VGS=0to10V - 10 15 nC VDD=40V,ID=50A,VGS=0to10V Qsw - 16 - nC VDD=40V,ID=50A,VGS=0to10V Gate charge total Qg - 46 58 nC VDD=40V,ID=50A,VGS=0to10V Gate plateau voltage Vplateau - 4.8 - V VDD=40V,ID=50A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 40 - nC VDS=0.1V,VGS=0to10V Qoss - 56 74 nC VDD=40V,VGS=0V Unit Note/TestCondition Min. Typ. Max. Qgs - 15 Qg(th) - Gate to drain charge Qgd Switching charge 2) 2) 2) Output charge Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Diode forward voltage 2) Reverse recovery time 2) Reverse recovery charge 1) 2) Values Min. Typ. Max. IS - - 100 A TC=25°C IS,pulse - - 400 A TC=25°C VSD - 0.9 1.1 V VGS=0V,IF=50A,Tj=25°C trr - 41 83 ns VR=40V,IF=50A,diF/dt=100A/µs Qrr - 36 72 nC VR=40V,IF=50A,diF/dt=100A/µs See ″Gate charge waveforms″ for parameter definition Defined by design. Not subject to production test Final Data Sheet 6 Rev.2.0,2014-12-17 OptiMOSTM5Power-Transistor,80V BSC037N08NS5 5Electricalcharacteristicsdiagrams Diagram2:Draincurrent 120 120 100 100 80 80 ID[A] Ptot[W] Diagram1:Powerdissipation 60 60 40 40 20 20 0 0 25 50 75 100 125 150 0 175 0 25 50 75 TC[°C] 100 125 150 175 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 10 µs 102 100 0.5 ZthJC[K/W] ID[A] 100 µs 1 ms 101 10 ms DC 0.2 0.1 10-1 0.05 0.02 0.01 100 10-1 10-1 10-2 100 101 102 10-3 single pulse 10-6 10-5 VDS[V] 10-3 10-2 10-1 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-4 ZthJC=f(tp);parameter:D=tp/T 7 Rev.2.0,2014-12-17 OptiMOSTM5Power-Transistor,80V BSC037N08NS5 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 400 8 5.5 V 5V 360 6V 7 7V 10 V 320 6 280 5 RDS(on)[mΩ] ID[A] 240 6V 200 160 120 7V 4 10 V 3 5.5 V 2 80 5V 1 40 0 0.0 0.5 1.0 1.5 2.0 2.5 0 3.0 0 50 100 150 VDS[V] 200 250 300 350 400 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 400 140 360 120 320 100 280 gfs[S] ID[A] 240 200 160 120 80 60 40 80 20 40 0 150 °C 0 2 25 °C 4 6 8 0 0 VGS[V] 40 60 80 100 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 20 gfs=f(ID);Tj=25°C 8 Rev.2.0,2014-12-17 OptiMOSTM5Power-Transistor,80V BSC037N08NS5 Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 7 5 6 4 5 max VGS(th)[V] RDS(on)[mΩ] 720 µA 3 4 typ 3 72 µA 2 2 1 1 0 -60 -20 20 60 100 140 0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=50A;VGS=10V VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 150 °C 25 °C, max 150 °C, max Ciss 103 102 IF[A] C[pF] Coss 102 101 Crss 101 0 20 40 60 80 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 9 Rev.2.0,2014-12-17 OptiMOSTM5Power-Transistor,80V BSC037N08NS5 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 102 10 40 V 9 64 V 16 V 8 25 °C 7 VGS[V] IAV[A] 6 100 °C 101 5 4 125 °C 3 2 1 100 100 101 102 103 0 0 10 tAV[µs] 20 30 40 50 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=50Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 86 84 VBR(DSS)[V] 82 80 78 76 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 10 Rev.2.0,2014-12-17 OptiMOSTM5Power-Transistor,80V BSC037N08NS5 6PackageOutlines   Figure1OutlinePG-TDSON-8,dimensionsinmm Final Data Sheet 11 Rev.2.0,2014-12-17 OptiMOSTM5Power-Transistor,80V BSC037N08NS5 RevisionHistory BSC037N08NS5 Revision:2014-12-17,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2014-12-17 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 12 Rev.2.0,2014-12-17