BSC0403NSATMA1

BSC0403NS MOSFET OptiMOSTM5Power-Transistor,150V SuperSO8 8 Features •OptimizedforhighperformanceSMPS,e.g.Sync.Rec. •100%avalanchetested •Superiorthermalresistance •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •LowQrr 7 5 6 4 1 2 3 6 5 3 2 4 7 8 1 Productvalidation QualifiedaccordingtoJEDECStandard Table1KeyPerformanceParameters S1 8D S2 7D Parameter Value Unit S3 6D VDS 150 V G4 5D RDS(on),max 11 mΩ ID 70 A Qrr 50 nC Type/OrderingCode Package Marking RelatedLinks BSC0403NS PG-TDSON-8 0403NS - Final Data Sheet 1 Rev.2.0,2019-12-16 OptiMOSTM5Power-Transistor,150V BSC0403NS TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.0,2019-12-16 OptiMOSTM5Power-Transistor,150V BSC0403NS 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 70 48 A VGS=10V,TC=25°C VGS=10V,TC=100°C - 280 A TA=25°C - - 100 mJ ID=50A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 125 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage Pulsed drain current1) 2) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - 0.6 1 °C/W - Thermal resistance, junction - ambient, RthJA 6 cm² cooling area3) - - 50 °C/W - 1) See Diagram 3 for more detailed information See Diagram 13 for more detailed information 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) Final Data Sheet 3 Rev.2.0,2019-12-16 OptiMOSTM5Power-Transistor,150V BSC0403NS 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3.8 4.6 V VDS=VGS,ID=91µA - 0.1 10 1 100 µA VDS=120V,VGS=0V,Tj=25°C VDS=120V,VGS=0V,Tj=125°C IGSS - 1 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 9 10 11 13 mΩ VGS=10V,ID=35A VGS=8V,ID=18A Gate resistance RG - 1 1.5 Ω - gfs - 55 - S |VDS|≥2|ID|RDS(on)max,ID=35A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 150 - Gate threshold voltage VGS(th) 3.0 Zero gate voltage drain current IDSS Gate-source leakage current 1) Transconductance Table5Dynamiccharacteristics Parameter Symbol Input capacitance1) Values Min. Typ. Max. Ciss - 2100 - pF VGS=0V,VDS=75V,f=1MHz Coss - 520 - pF VGS=0V,VDS=75V,f=1MHz Reverse transfer capacitance Crss - 13 - pF VGS=0V,VDS=75V,f=1MHz Turn-on delay time td(on) - 12 - ns VDD=75V,VGS=10V,ID=35A, RG,ext=3Ω Rise time tr - 4 - ns VDD=75V,VGS=10V,ID=35A, RG,ext=3Ω Turn-off delay time td(off) - 16 - ns VDD=75V,VGS=10V,ID=35A, RG,ext=3Ω Fall time tf - 5 - ns VDD=75V,VGS=10V,ID=35A, RG,ext=3Ω Unit Note/TestCondition Output capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 12 - nC VDD=75V,ID=35A,VGS=0to10V Gate to drain charge1) Qgd - 6.0 - nC VDD=75V,ID=35A,VGS=0to10V Switching charge Qsw - 12 - nC VDD=75V,ID=35A,VGS=0to10V Gate charge total Qg - 28 - nC VDD=75V,ID=35A,VGS=0to10V Gate plateau voltage Vplateau - 5.7 - V VDD=75V,ID=35A,VGS=0to10V Qoss - 78 - nC VDS=75V,VGS=0V 1) 1) Output charge 1) 2) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.0,2019-12-16 OptiMOSTM5Power-Transistor,150V BSC0403NS Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) Values Unit Note/TestCondition 70 A TC=25°C - 280 A TC=25°C - 0.86 1.2 V VGS=0V,IF=35A,Tj=25°C trr - 47 - ns VR=75V,IF=35A,diF/dt=100A/µs Qrr - 50 - nC VR=75V,IF=35A,diF/dt=100A/µs Min. Typ. Max. IS - - IS,pulse - VSD Defined by design. Not subject to production test. Final Data Sheet 5 Rev.2.0,2019-12-16 OptiMOSTM5Power-Transistor,150V BSC0403NS 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 150 80 125 60 ID[A] Ptot[W] 100 75 40 50 20 25 0 0 20 40 60 80 100 120 140 0 160 0 20 40 60 TC[°C] 80 100 120 140 160 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 102 10 µs 100 µs ZthJC[K/W] 10 ms 101 100 1 ms ID[A] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 100 10-1 10-2 -1 10 DC 10-2 100 101 102 103 10-3 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.0,2019-12-16 OptiMOSTM5Power-Transistor,150V BSC0403NS Diagram5:Typ.outputcharacteristics 300 Diagram6:Typ.drain-sourceonresistance 15 10 V 9 V 7V 14 8V 240 13 12 ID[A] 7V 120 RDS(on)[mΩ] 8V 180 11 9V 10 9 10 V 8 60 7 6 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 5 7.0 0 20 40 VDS[V] 60 80 100 ID[A] ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance 100 27 24 80 21 ID[A] RDS(on)[mΩ] 60 40 150 °C 18 15 20 12 150 °C 0 0 2 25 °C 4 6 25 °C 8 10 VGS[V] 5 6 7 8 9 10 VGS[V] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 9 RDS(on)=f(VGS),ID=35A;parameter:Tj 7 Rev.2.0,2019-12-16 OptiMOSTM5Power-Transistor,150V BSC0403NS Diagram10:Typ.gatethresholdvoltage 2.0 5 1.6 4 910 µA 1.2 3 VGS(th)[V] RDS(on)(normalizedto25°C) Diagram9:Normalizeddrain-sourceonresistance 0.8 0.4 91 µA 2 1 0.0 -80 -40 0 40 80 120 0 -80 160 -40 0 Tj[°C] 40 80 120 160 Tj[°C] RDS(on)=f(Tj),ID=44A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 25 °C, max 150 °C 150 °C, max Ciss 103 102 IF[A] C[pF] Coss 102 101 Crss 101 100 0 25 50 75 100 125 150 100 0.00 0.25 VDS[V] 0.75 1.00 1.25 1.50 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.50 IF=f(VSD);parameter:Tj 8 Rev.2.0,2019-12-16 OptiMOSTM5Power-Transistor,150V BSC0403NS Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 30 75 120 8 25 °C 101 6 IAV[A] VGS[V] 100 °C 4 0 10 125 °C 2 10-1 100 101 102 103 tAV[µs] 0 0 5 10 15 20 25 30 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=40Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 160 158 156 VBR(DSS)[V] 154 152 150 148 146 144 -80 -40 0 40 80 120 160 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.0,2019-12-16 OptiMOSTM5Power-Transistor,150V BSC0403NS 5PackageOutlines   Figure1OutlinePG-TDSON-8,dimensionsinmm Final Data Sheet 10 Rev.2.0,2019-12-16 OptiMOSTM5Power-Transistor,150V BSC0403NS RevisionHistory BSC0403NS Revision:2019-12-16,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2019-12-16 Release of final version Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.0,2019-12-16