BSC050N10NS5
MOSFET
OptiMOSTM5Power-Transistor,100V
SuperSO8
8
Features
•OptimizedforhighperformanceSMPS,e.g.sync.rec.
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
•175°Crated
ProductValidation:
Qualifiedforindustrialapplicationsaccordingtotherelevanttestsof
JEDEC47/20/22
Table1KeyPerformanceParameters
7
5
6
4
1
2
3
6
5
3
2
4
7
8
1
S1
8D
S2
7D
Parameter
Value
Unit
S3
6D
VDS
100
V
G4
5D
RDS(on),max
5.0
mΩ
ID
100
A
Qoss
59
nC
QG(0V..10V)
49
nC
Type/OrderingCode
Package
BSC050N10NS5
PG-TDSON-8
Final Data Sheet
Marking
050N10N5
1
RelatedLinks
-
Rev.2.2,2019-11-14
OptiMOSTM5Power-Transistor,100V
BSC050N10NS5
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.2.2,2019-11-14
OptiMOSTM5Power-Transistor,100V
BSC050N10NS5
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current
Values
Unit
Note/TestCondition
100
80
16
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=10V,TA=25°C,RthJA=50K/W1)
-
400
A
TC=25°C
-
-
155
mJ
ID=50A,RGS=25Ω
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
136
3.0
W
TC=25°C
TA=25°C,RthJA=50K/W2)
Operating and storage temperature
Tj,Tstg
-55
-
175
°C
IEC climatic category;
DIN IEC 68-1: 55/175/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
Pulsed drain current2)
ID,pulse
-
Avalanche energy, single pulse3)
EAS
Gate source voltage
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case,
bottom
Values
Min.
Typ.
Max.
RthJC
-
0.7
1.1
K/W
-
Thermal resistance, junction - case,
top
RthJC
-
-
20
K/W
-
Device on PCB,
6 cm2 cooling area1)
RthJA
-
-
50
K/W
-
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See Diagram 3 for more detailed information
3)
See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.2.2,2019-11-14
OptiMOSTM5Power-Transistor,100V
BSC050N10NS5
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
3.0
3.8
V
VDS=VGS,ID=72µA
-
0.1
10
1
100
µA
VDS=100V,VGS=0V,Tj=25°C
VDS=100V,VGS=0V,Tj=125°C
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
4.3
5.3
5.0
7.1
mΩ
VGS=10V,ID=50A
VGS=6V,ID=25A
Gate resistance1)
RG
-
1.2
1.8
Ω
-
Transconductance
gfs
50
100
-
S
|VDS|>2|ID|RDS(on)max,ID=50A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
100
-
Gate threshold voltage
VGS(th)
2.2
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance1)
Values
Min.
Typ.
Max.
Ciss
-
3300
4300
pF
VGS=0V,VDS=50V,f=1MHz
Coss
-
490
640
pF
VGS=0V,VDS=50V,f=1MHz
Reverse transfer capacitance
Crss
-
20
35
pF
VGS=0V,VDS=50V,f=1MHz
Turn-on delay time
td(on)
-
10
-
ns
VDD=50V,VGS=10V,ID=50A,
RG,ext=3.0Ω
Rise time
tr
-
9
-
ns
VDD=50V,VGS=10V,ID=50A,
RG,ext=3.0Ω
Turn-off delay time
td(off)
-
19
-
ns
VDD=50V,VGS=10V,ID=50A,
RG,ext=3.0Ω
Fall time
tf
-
7
-
ns
VDD=50V,VGS=10V,ID=50A,
RG,ext=3.0Ω
Unit
Note/TestCondition
Output capacitance1)
1)
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge
Gate charge at threshold
Values
Min.
Typ.
Max.
Qgs
-
16
-
nC
VDD=50V,ID=50A,VGS=0to10V
Qg(th)
-
10
-
nC
VDD=50V,ID=50A,VGS=0to10V
Gate to drain charge
Qgd
-
11
16
nC
VDD=50V,ID=50A,VGS=0to10V
Switching charge
Qsw
-
16
-
nC
VDD=50V,ID=50A,VGS=0to10V
Gate charge total
Qg
-
49
61
nC
VDD=50V,ID=50A,VGS=0to10V
Gate plateau voltage
Vplateau
-
4.7
-
V
VDD=50V,ID=50A,VGS=0to10V
Gate charge total, sync. FET
Qg(sync)
-
43
-
nC
VDS=0.1V,VGS=0to10V
Qoss
-
59
78
nC
VDD=50V,VGS=0V
1)
1)
1)
Output charge
1)
2)
Defined by design. Not subject to production test.
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.2.2,2019-11-14
OptiMOSTM5Power-Transistor,100V
BSC050N10NS5
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Diode pulse current
Diode forward voltage
1)
Reverse recovery time
1)
Reverse recovery charge
1)
Values
Unit
Note/TestCondition
100
A
TC=25°C
-
400
A
TC=25°C
-
0.9
1.1
V
VGS=0V,IF=50A,Tj=25°C
trr
-
46
92
ns
VR=50V,IF=50A,diF/dt=100A/µs
Qrr
-
68
136
nC
VR=50V,IF=50A,diF/dt=100A/µs
Min.
Typ.
Max.
IS
-
-
IS,pulse
-
VSD
Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.2.2,2019-11-14
OptiMOSTM5Power-Transistor,100V
BSC050N10NS5
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
140
120
120
100
100
80
ID[A]
Ptot[W]
80
60
60
40
40
20
20
0
0
25
50
75
100
125
150
175
0
200
0
25
50
75
TC[°C]
100
125
150
175
200
TC[°C]
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
101
10
1 µs
102
10 µs
100
0.5
100 µs
101
ZthJC[K/W]
ID[A]
1 ms
10 ms
0
10
DC
0.2
0.1
10-1
0.05
0.02
0.01
single pulse
10-2
10-1
10-2
10-1
100
101
102
103
10-3
10-6
10-5
VDS[V]
10-3
10-2
10-1
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-4
ZthJC=f(tp);parameter:D=tp/T
6
Rev.2.2,2019-11-14
OptiMOSTM5Power-Transistor,100V
BSC050N10NS5
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
400
8
5V
360
5.5 V
7
320
10 V
6V
7V
6
6V
280
7V
5
RDS(on)[mΩ]
ID[A]
240
200
160
5.5 V
10 V
4
3
120
2
80
5V
1
40
0
0
1
2
3
4
0
5
0
50
100
150
VDS[V]
200
250
300
350
400
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
400
160
360
320
120
280
gfs[S]
ID[A]
240
200
80
160
120
40
80
40
25 °C
175 °C
0
0
2
4
6
8
0
0
VGS[V]
40
60
80
100
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
20
gfs=f(ID);Tj=25°C
7
Rev.2.2,2019-11-14
OptiMOSTM5Power-Transistor,100V
BSC050N10NS5
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
12
4
10
720 µA
3
72 µA
VGS(th)[V]
RDS(on)[mΩ]
8
max
6
2
typ
4
1
2
0
-60
-20
20
60
100
140
0
-60
180
-20
20
Tj[°C]
60
100
140
180
Tj[°C]
RDS(on)=f(Tj);ID=50A;VGS=10V
VGS(th)=f(Tj);VGS=VDS
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
103
10
25 °C
25 °C, max
175 °C
175 °C, max
Ciss
Coss
102
IF[A]
C[pF]
103
102
101
Crss
101
0
20
40
60
80
100
100
0.00
0.25
VDS[V]
0.75
1.00
1.25
1.50
VSD[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
0.50
IF=f(VSD);parameter:Tj
8
Rev.2.2,2019-11-14
OptiMOSTM5Power-Transistor,100V
BSC050N10NS5
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
2
10
10
9
8
25 °C
50 V
7
20 V
80 V
VGS[V]
IAV[A]
6
101
5
4
100 °C
3
2
150 °C
100
100
101
102
103
tAV[µs]
1
0
0
10
20
30
40
50
60
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=50Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Diagram Gate charge waveforms
108
106
104
VBR(DSS)[V]
102
100
98
96
94
92
-80
-40
0
40
80
120
160
200
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
9
Rev.2.2,2019-11-14
OptiMOSTM5Power-Transistor,100V
BSC050N10NS5
5PackageOutlines
DOCUMENT NO.
Z8B00003332
REVISION
07
DIMENSION
A
A1
b
D
D1
D2
E
E1
E2
e
L
M
MILLIMETERS
MIN.
MAX.
0.90
1.20
0.15
0.35
0.34
0.54
4.80
5.35
3.90
4.40
0.03
0.23
5.70
6.10
5.90
6.42
3.88
4.31
1.27
0.45
0.71
0.45
0.69
SCALE 10:1
0
1
2
3mm
EUROPEAN PROJECTION
ISSUE DATE
06.06.2019
Figure1OutlinePG-TDSON-8,dimensionsinmm
Final Data Sheet
10
Rev.2.2,2019-11-14
OptiMOSTM5Power-Transistor,100V
BSC050N10NS5
Dimension in mm
Figure2OutlineTape(TDSON-8)
Final Data Sheet
11
Rev.2.2,2019-11-14
OptiMOSTM5Power-Transistor,100V
BSC050N10NS5
PG-TDSON-8: RecommenGHd BoDrdpads & Apertures
1.905
1.905
1.27
3x
0.6
1.27
3x
copper
Figure 3
Final Data Sheet
1.6
0.2
1.27
3x
0.825
2.863
0.5
0.925
2.863
1.27
3x
1.905
0.875
1.5
0.75
0.2
2.9
4.455
3.325
0.8
0.5
1.5
0.4
1.905
stencil apertures
solder mask
all dimensions in mm
Outline Boardpads (TDSON-8), dimensions in mm
12
Rev.2.2,2019-11-14
OptiMOS TM 5 Power-Transistor , 100 V
BSC050N10NS5
Revision History
BSC050N10NS5
Revision: 2019-11-14, Rev. 2.2
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2018-05-15
Release of final version
2.1
2019-10-31
Update package drawings
2.2
2019-11-14
Update "Marking"
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously
improve the quality of this document. Please send your proposal (including a reference to this document) to:
erratum@infineon.com
Published by
Infineon Technologies AG
81726 München, Germany
© 2019 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the
product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation
warranties of non-infringement of intellectual property rights of any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the
product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s
technical departments to evaluate the suitability of the product for the intended application and the completeness of the product
information given in this document with respect to such application.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com ).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or
automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a
failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and
aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Final Data Sheet
13
Rev. 2.2, 2019-11-14