BSC052N08NS5

BSC052N08NS5 MOSFET OptiMOSTM5Power-Transistor,80V SuperSO8 8 Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 7 5 6 4 1 2 3 6 5 3 2 4 7 8 1 Table1KeyPerformanceParameters Parameter Value Unit S1 8D VDS 80 V S2 7D RDS(on),max 5.2 mΩ S3 6D ID 95 A G4 5D Qoss 39 nC QG(0V..10V) 32 nC Type/OrderingCode Package BSC052N08NS5 PG-TDSON-8 1) Marking 052N08NS RelatedLinks - J-STD20 and JESD22 Final Data Sheet 1 Rev.2.1,2019-10-31 OptiMOSTM5Power-Transistor,80V BSC052N08NS5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.1,2019-10-31 OptiMOSTM5Power-Transistor,80V BSC052N08NS5 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 95 60 19 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TC=25°C,RthJA=50K/W1) - 380 A TC=25°C - - 70 mJ ID=50A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 83 2.5 W TC=25°C TA=25°C,RthJA=50K/W1) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse3) EAS Gate source voltage 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - 0.9 1.5 K/W - Thermal resistance, junction - case, top RthJC - - 20 K/W - Device on PCB, 6 cm2 cooling area1) RthJA - - 50 K/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Final Data Sheet 3 Rev.2.1,2019-10-31 OptiMOSTM5Power-Transistor,80V BSC052N08NS5 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3.0 3.8 V VDS=VGS,ID=49µA - 0.1 10 1 100 µA VDS=80V,VGS=0V,Tj=25°C VDS=80V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 4.4 6.3 5.2 7.6 mΩ VGS=10V,ID=47.5A VGS=6V,ID=23.8A Gate resistance1) RG - 1.1 1.7 Ω - Transconductance gfs 38 76 - S |VDS|>2|ID|RDS(on)max,ID=47.5A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 80 - Gate threshold voltage VGS(th) 2.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Values Min. Typ. Max. Ciss - 2200 2900 pF VGS=0V,VDS=40V,f=1MHz Coss - 370 480 pF VGS=0V,VDS=40V,f=1MHz Reverse transfer capacitance Crss - 18 32 pF VGS=0V,VDS=40V,f=1MHz Turn-on delay time td(on) - 12 - ns VDD=40V,VGS=10V,ID=47.5A, RG,ext=3Ω Rise time tr - 7 - ns VDD=40V,VGS=10V,ID=47.5A, RG,ext=3Ω Turn-off delay time td(off) - 19 - ns VDD=40V,VGS=10V,ID=47.5A, RG,ext=3Ω Fall time tf - 5 - ns VDD=40V,VGS=10V,ID=47.5A, RG,ext=3Ω Unit Note/TestCondition Input capacitance1) 1) Output capacitance 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Gate charge at threshold Values Min. Typ. Max. Qgs - 11 - nC VDD=40V,ID=47.5A,VGS=0to10V Qg(th) - 6.2 - nC VDD=40V,ID=47.5A,VGS=0to10V Gate to drain charge Qgd - 7.1 11 nC VDD=40V,ID=47.5A,VGS=0to10V Switching charge Qsw - 12 - nC VDD=40V,ID=47.5A,VGS=0to10V Gate charge total Qg - 32 40 nC VDD=40V,ID=47.5A,VGS=0to10V Gate plateau voltage Vplateau - 4.9 - V VDD=40V,ID=47.5A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 27 - nC VDS=0.1V,VGS=0to10V Qoss - 39 52 nC VDD=40V,VGS=0V 1) 1) 1) Output charge 1) 2) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.1,2019-10-31 OptiMOSTM5Power-Transistor,80V BSC052N08NS5 Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) Values Unit Note/TestCondition 76 A TC=25°C - 380 A TC=25°C - 0.89 1.1 V VGS=0V,IF=47.5A,Tj=25°C trr - 37 74 ns VR=40V,IF=47.5A,diF/dt=100A/µs Qrr - 35 70 nC VR=40V,IF=47.5A,diF/dt=100A/µs Min. Typ. Max. IS - - IS,pulse - VSD Defined by design. Not subject to production test. Final Data Sheet 5 Rev.2.1,2019-10-31 OptiMOSTM5Power-Transistor,80V BSC052N08NS5 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 100 80 80 60 60 ID[A] Ptot[W] 100 40 40 20 20 0 0 25 50 75 100 125 150 0 175 0 25 50 75 TC[°C] 100 125 150 175 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 102 100 10 µs 0.5 0.2 1 10 ZthJC[K/W] ID[A] 100 µs 1 ms 10 ms 0.1 10 -1 0.05 0.02 0.01 DC single pulse 0 10-2 10 10-1 10-1 100 101 102 10-3 10-6 10-5 VDS[V] 10-3 10-2 10-1 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-4 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.1,2019-10-31 OptiMOSTM5Power-Transistor,80V BSC052N08NS5 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 400 12 5V 360 10 V 7V 7V 280 8 RDS(on)[mΩ] 240 ID[A] 6V 10 320 200 160 6V 6 10 V 4 120 5.5 V 80 2 5V 40 0 5.5 V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 4.0 0 50 100 150 VDS[V] 200 250 300 350 400 120 140 160 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 240 160 200 120 gfs[S] ID[A] 160 120 80 80 40 40 150 °C 0 0 2 25 °C 4 6 8 0 0 20 VGS[V] 60 80 100 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 40 gfs=f(ID);Tj=25°C 7 Rev.2.1,2019-10-31 OptiMOSTM5Power-Transistor,80V BSC052N08NS5 Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 10 4 490 µA 8 3 49 µA max VGS(th)[V] RDS(on)[mΩ] 6 typ 4 2 1 2 0 -60 -20 20 60 100 140 0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=47.5A;VGS=10V VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 150 °C 25 °C, max 150 °C, max Ciss IF[A] 102 C[pF] 103 Coss 102 101 Crss 101 0 20 40 60 80 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 8 Rev.2.1,2019-10-31 OptiMOSTM5Power-Transistor,80V BSC052N08NS5 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 9 8 40 V 7 25 °C VGS[V] IAV[A] 6 1 10 100 °C 16 V 64 V 5 4 3 125 °C 2 1 100 100 101 102 103 tAV[µs] 0 0 10 20 30 40 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=47.5Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 86 84 VBR(DSS)[V] 82 80 78 76 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.1,2019-10-31 OptiMOSTM5Power-Transistor,80V BSC052N08NS5 5PackageOutlines DOCUMENT NO. Z8B00003332 REVISION 07 DIMENSION A A1 b D D1 D2 E E1 E2 e L M MILLIMETERS MIN. MAX. 0.90 1.20 0.15 0.35 0.34 0.54 4.80 5.35 3.90 4.40 0.03 0.23 5.70 6.10 5.90 6.42 3.88 4.31 1.27 0.45 0.71 0.45 0.69 SCALE 10:1 0 1 2 3mm EUROPEAN PROJECTION ISSUE DATE 06.06.2019 Figure1OutlinePG-TDSON-8,dimensionsinmm Final Data Sheet 10 Rev.2.1,2019-10-31 OptiMOSTM5Power-Transistor,80V BSC052N08NS5 Dimension in mm Figure2OutlineTape(TDSON-8) Final Data Sheet 11 Rev.2.1,2019-10-31 OptiMOSTM5Power-Transistor,80V BSC052N08NS5 PG-TDSON-8: RecommenGHd BoDrdpads & Apertures 1.905 1.905 1.27 3x 0.6 1.27 3x copper Figure 3 Final Data Sheet 1.6 0.2 1.27 3x 0.825 2.863 0.5 0.925 2.863 1.27 3x 1.905 0.875 1.5 0.75 0.2 2.9 4.455 3.325 0.8 0.5 1.5 0.4 1.905 stencil apertures solder mask all dimensions in mm Outline Boardpads (TDSON-8), dimensions in mm 12 Rev.2.1,2019-10-31 OptiMOS TM5 Power-Transistor , 80 V BSC052N08NS5 Revision History BSC052N08NS5 Revision: 2019-10-31, Rev. 2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2014-12-27 Release of final version 2.1 2019-10-31 Update package drawings Trademarks All referenced product or service names and trademarks are the property of their respective owners. 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The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 13 Rev. 2.1, 2019-10-31