BSC066N06NS
MOSFET
OptiMOSTMPower-Transistor,60V
SuperSO8
8
Features
•OptimizedforhighperformanceSMPS,e.g.sync.rec.
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
7
5
6
4
1
2
3
6
5
3
2
4
7
8
1
Table1KeyPerformanceParameters
Parameter
Value
Unit
S1
8D
VDS
60
V
S2
7D
RDS(on),max
6.6
mΩ
S3
6D
ID
64
A
G4
5D
QOSS
19
nC
QG(0V..10V)
17
nC
Type/OrderingCode
Package
BSC066N06NS
PG-TDSON-8
1)
Marking
066N06NS
RelatedLinks
-
J-STD20 and JESD22
Final Data Sheet
1
Rev.2.1,2019-11-13
OptiMOSTMPower-Transistor,60V
BSC066N06NS
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.2.1,2019-11-13
OptiMOSTMPower-Transistor,60V
BSC066N06NS
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current
Values
Unit
Note/TestCondition
64
41
15
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=10V,TC=25°C,RthJA=50K/W1)
-
256
A
TC=25°C
-
-
21
mJ
ID=40A,RGS=25Ω
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
46
2.5
W
TC=25°C
TA=25°C,RthJA=50K/W1)
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
Pulsed drain current2)
ID,pulse
-
Avalanche energy, single pulse3)
EAS
Gate source voltage
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case,
bottom
Values
Min.
Typ.
Max.
RthJC
-
1.6
2.7
K/W
-
Thermal resistance, junction - case,
top
RthJC
-
-
20
K/W
-
Device on PCB,
6 cm2 cooling area1)
RthJA
-
-
50
K/W
-
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
Final Data Sheet
3
Rev.2.1,2019-11-13
OptiMOSTMPower-Transistor,60V
BSC066N06NS
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
2.8
3.3
V
VDS=VGS,ID=20µA
-
0.1
10
1
100
µA
VDS=60V,VGS=0V,Tj=25°C
VDS=60V,VGS=0V,Tj=125°C
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
5.5
8.2
6.6
9.9
mΩ
VGS=10V,ID=50A
VGS=6V,ID=12.5A
Gate resistance
RG
-
1.2
1.8
Ω
-
Transconductance
gfs
32
65
-
S
|VDS|>2|ID|RDS(on)max,ID=50A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
60
-
Gate threshold voltage
VGS(th)
2.1
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Values
Min.
Typ.
Max.
Ciss
-
1200
1500
pF
VGS=0V,VDS=30V,f=1MHz
Output capacitance
Coss
-
300
375
pF
VGS=0V,VDS=30V,f=1MHz
Reverse transfer capacitance
Crss
-
19
38
pF
VGS=0V,VDS=30V,f=1MHz
Turn-on delay time
td(on)
-
7
-
ns
VDD=30V,VGS=10V,ID=50A,
RG,ext=1.6Ω
Rise time
tr
-
3
-
ns
VDD=30V,VGS=10V,ID=50A,
RG,ext=1.6Ω
Turn-off delay time
td(off)
-
12
-
ns
VDD=30V,VGS=10V,ID=50A,
RG,ext=1.6Ω
Fall time
tf
-
3
-
ns
VDD=30V,VGS=10V,ID=50A,
RG,ext=1.6Ω
Unit
Note/TestCondition
Table6Gatechargecharacteristics1)
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
-
6.3
-
nC
VDD=30V,ID=50A,VGS=0to10V
Gate charge at threshold
Qg(th)
-
3.4
-
nC
VDD=30V,ID=50A,VGS=0to10V
Gate to drain charge
Qgd
-
3.6
5.1
nC
VDD=30V,ID=50A,VGS=0to10V
Switching charge
Qsw
-
6.5
-
nC
VDD=30V,ID=50A,VGS=0to10V
Gate charge total
Qg
-
17
21
nC
VDD=30V,ID=50A,VGS=0to10V
Gate plateau voltage
Vplateau
-
5.1
-
V
VDD=30V,ID=50A,VGS=0to10V
Gate charge total, sync. FET
Qg(sync)
-
15
-
nC
VDS=0.1V,VGS=0to10V
Output charge
Qoss
-
19
26
nC
VDD=30V,VGS=0V
1)
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.2.1,2019-11-13
OptiMOSTMPower-Transistor,60V
BSC066N06NS
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Values
Unit
Note/TestCondition
40
A
TC=25°C
-
256
A
TC=25°C
-
0.95
1.2
V
VGS=0V,IF=40A,Tj=25°C
trr
-
23
37
ns
VR=30V,IF=40A,diF/dt=100A/µs
Qrr
-
52
-
nC
VR=30V,IF=40A,diF/dt=100A/µs
Min.
Typ.
Max.
IS
-
-
Diode pulse current
IS,pulse
-
Diode forward voltage
VSD
Reverse recovery time
Reverse recovery charge
Final Data Sheet
5
Rev.2.1,2019-11-13
OptiMOSTMPower-Transistor,60V
BSC066N06NS
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
60
80
60
ID[A]
Ptot[W]
40
40
20
20
0
0
25
50
75
100
125
150
0
175
0
25
50
75
TC[°C]
100
125
150
175
TC[°C]
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
101
10
1 µs
102
0.5
10 µs
100
ZthJC[K/W]
ID[A]
0.2
100 µs
101
1 ms
10 ms
DC
0.1
0.05
0.02
10-1
0.01
100
10-1
10-1
single pulse
100
101
102
10-2
10-6
10-5
VDS[V]
10-3
10-2
10-1
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-4
ZthJC=f(tp);parameter:D=tp/T
6
Rev.2.1,2019-11-13
OptiMOSTMPower-Transistor,60V
BSC066N06NS
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
250
15
5V
200
12
5.5 V
6V
10 V
7V
ID[A]
RDS(on)[mΩ]
150
100
6V
9
7V
6
10 V
5.5 V
50
3
5V
0
0.0
0.5
1.0
1.5
0
2.0
0
50
100
VDS[V]
150
200
250
80
100
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
250
120
200
80
ID[A]
gfs[S]
150
100
40
50
150 °C
0
0
2
4
25 °C
6
8
0
0
VGS[V]
40
60
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
20
gfs=f(ID);Tj=25°C
7
Rev.2.1,2019-11-13
OptiMOSTMPower-Transistor,60V
BSC066N06NS
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
12
5
11
10
4
9
8
max
3
6
VGS(th)[V]
RDS(on)[mΩ]
7
typ
5
200 mA
20 µA
2
4
3
1
2
1
0
-60
-20
20
60
100
140
0
-60
180
-20
20
Tj[°C]
60
100
140
180
Tj[°C]
RDS(on)=f(Tj);ID=50A;VGS=10V
VGS(th)=f(Tj);VGS=VDS
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
103
10
25 °C
150 °C
150°C 98%
25°C 98%
Ciss
102
IF[A]
C[pF]
103
Coss
102
101
Crss
101
0
20
40
60
100
0.0
0.5
VDS[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
1.0
1.5
2.0
VSD[V]
IF=f(VSD);parameter:Tj
8
Rev.2.1,2019-11-13
OptiMOSTMPower-Transistor,60V
BSC066N06NS
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
2
10
12
30 V
10
12 V
48 V
101
8
100 °C
25 °C
IAV[A]
VGS[V]
125 °C
100
6
4
2
10-1
100
101
102
103
tAV[µs]
0
0
5
10
15
20
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=50Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Diagram Gate charge waveforms
70
66
VBR(DSS)[V]
62
58
54
50
-60
-20
20
60
100
140
180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
9
Rev.2.1,2019-11-13
OptiMOSTMPower-Transistor,60V
BSC066N06NS
5PackageOutlines
DOCUMENT NO.
Z8B00003332
REVISION
07
DIMENSION
A
A1
b
D
D1
D2
E
E1
E2
e
L
M
MILLIMETERS
MIN.
MAX.
0.90
1.20
0.15
0.35
0.34
0.54
4.80
5.35
3.90
4.40
0.03
0.23
5.70
6.10
5.90
6.42
3.88
4.31
1.27
0.45
0.71
0.45
0.69
SCALE 10:1
0
1
2
3mm
EUROPEAN PROJECTION
ISSUE DATE
06.06.2019
Figure1OutlinePG-TDSON-8,dimensionsinmm
Final Data Sheet
10
Rev.2.1,2019-11-13
OptiMOSTMPower-Transistor,60V
BSC066N06NS
Dimension in mm
Figure2OutlineTape(TDSON-8)
Final Data Sheet
11
Rev.2.1,2019-11-13
OptiMOSTMPower-Transistor,60V
BSC066N06NS
PG-TDSON-8: RecommenGHd BoDrdpads & Apertures
1.905
1.905
1.27
3x
0.6
1.27
3x
copper
Figure 3
Final Data Sheet
1.6
0.2
1.27
3x
0.825
2.863
0.5
0.925
2.863
1.27
3x
1.905
0.875
1.5
0.75
0.2
2.9
4.455
3.325
0.8
0.5
1.5
0.4
1.905
stencil apertures
solder mask
all dimensions in mm
Outline Boardpads (TDSON-8), dimensions in mm
12
Rev.2.1,2019-11-13
OptiMOS TM Power-Transistor , 60 V
BSC066N06NS
Revision History
BSC066N06NS
Revision: 2019-11-13, Rev. 2.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.1
2019-11-13
Update package drawings, add RthJC_typ and Qoss_max
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
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improve the quality of this document. Please send your proposal (including a reference to this document) to:
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Published by
Infineon Technologies AG
81726 München, Germany
© 2019 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the
product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation
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In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
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information given in this document with respect to such application.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com ).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or
automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a
failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and
aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Final Data Sheet
13
Rev. 2.1, 2019-11-13
