BSC067N06LS3G
MOSFET
OptiMOSTM3Power-Transistor,60V
SuperSO8
8
Features
•Idealforhighfrequencyswitchingandsync.rec.
•OptimizedtechnologyforDC/DCconverters
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowon-resistanceRDS(on)
•Superiorthermalresistance
•N-channel,logiclevel
•100%avalanchetested
•Pb-freeplating;RoHScompliant
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Halogen-freeaccordingtoIEC61249-2-21
7
5
6
4
1
2
3
6
5
3
2
4
7
8
1
Drain
Pin 5-8
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
60
V
RDS(on),max
6.7
mΩ
ID
79
A
Gate
Pin 4
Source
Pin 1-3
*1: Internal body diode
Type/OrderingCode
Package
BSC067N06LS3 G
PG-TDSON-8
1)
*1
Marking
RelatedLinks
067N06LS
-
J-STD20 and JESD22
Final Data Sheet
1
Rev.2.5,2021-09-15
OptiMOSTM3Power-Transistor,60V
BSC067N06LS3G
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
2
Rev.2.5,2021-09-15
OptiMOSTM3Power-Transistor,60V
BSC067N06LS3G
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Values
Unit
Note/TestCondition
79
50
59
37
15
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=4.5V,TC=25°C
VGS=4.5V,TC=100°C
VGS=10V,TA=25°C,RthJA=50K/W2)
-
316
A
TC=25°C
-
-
47
mJ
ID=50A,RGS=25Ω
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
69
2.5
W
TC=25°C
TA=25°C,RthJA=50K/W2)
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
ID,pulse
-
Avalanche energy, single pulse
EAS
Gate source voltage
Continuous drain current1)
Pulsed drain current3)
4)
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case
Values
Min.
Typ.
Max.
RthJC
-
-
1.8
K/W
-
Device on PCB,
minimal footprint
RthJA
-
-
62
K/W
-
Device on PCB,
6 cm2 cooling area2)
RthJA
-
-
50
K/W
-
1)
Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See Diagram 3 for more detailed information
4)
See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.2.5,2021-09-15
OptiMOSTM3Power-Transistor,60V
BSC067N06LS3G
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
1.7
2.2
V
VDS=VGS,ID=35µA
-
0.1
10
1
100
µA
VDS=60V,VGS=0V,Tj=25°C
VDS=60V,VGS=0V,Tj=125°C
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
8.0
5.4
12.1
6.7
mΩ
VGS=4.5V,ID=25A
VGS=10V,ID=50A
Gate resistance
RG
-
1.3
-
Ω
-
Transconductance
gfs
38
77
-
S
|VDS|>2|ID|RDS(on)max,ID=50A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
60
-
Gate threshold voltage
VGS(th)
1.2
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance1)
Values
Min.
Typ.
Max.
Ciss
-
3800
5100
pF
VGS=0V,VDS=30V,f=1MHz
Output capacitance1)
Coss
-
710
940
pF
VGS=0V,VDS=30V,f=1MHz
Reverse transfer capacitance
Crss
-
32
-
pF
VGS=0V,VDS=30V,f=1MHz
Turn-on delay time
td(on)
-
15
-
ns
VDD=30V,VGS=10V,ID=20A,
RG=2Ω
Rise time
tr
-
26
-
ns
VDD=30V,VGS=10V,ID=20A,
RG=2Ω
Turn-off delay time
td(off)
-
37
-
ns
VDD=30V,VGS=10V,ID=20A,
RG=2Ω
Fall time
tf
-
7
-
ns
VDD=30V,VGS=10V,ID=20A,
RG=2Ω
Unit
Note/TestCondition
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
-
14
-
nC
VDD=30V,ID=50A,VGS=0to4.5V
Gate charge at threshold
Qg(th)
-
7
-
nC
VDD=30V,ID=50A,VGS=0to4.5V
Gate to drain charge
Qgd
-
5
-
nC
VDD=30V,ID=50A,VGS=0to4.5V
Switching charge
Qsw
-
12
-
nC
VDD=30V,ID=50A,VGS=0to4.5V
Gate charge total
Qg
-
23
30
nC
VDD=30V,ID=50A,VGS=0to4.5V
Gate plateau voltage
Vplateau
-
3.6
-
V
VDD=30V,ID=50A,VGS=0to4.5V
Gate charge total1)
Qg
-
51
67
nC
VDD=30V,ID=50A,VGS=0to10V
Qoss
-
35
47
nC
VDD=30V,VGS=0V
1)
1)
Output charge
1)
2)
Defined by design. Not subject to production test
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.2.5,2021-09-15
OptiMOSTM3Power-Transistor,60V
BSC067N06LS3G
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Values
Unit
Note/TestCondition
58
A
TC=25°C
-
316
A
TC=25°C
-
0.9
1.2
V
VGS=0V,IF=50A,Tj=25°C
trr
-
40
-
ns
VR=30V,IF=20A,diF/dt=100A/µs
Qrr
-
39
-
nC
VR=30V,IF=20A,diF/dt=100A/µs
Min.
Typ.
Max.
IS
-
-
Diode pulse current
IS,pulse
-
Diode forward voltage
VSD
Reverse recovery time
Reverse recovery charge
Final Data Sheet
5
Rev.2.5,2021-09-15
OptiMOSTM3Power-Transistor,60V
BSC067N06LS3G
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
80
100
70
80
60
60
ID[A]
Ptot[W]
50
40
40
30
20
20
10
0
0
50
100
150
0
200
0
20
40
60
TC[°C]
80
100
120
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
160
101
10
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
1 µs
102
10 µs
100
ZthJC[K/W]
100 µs
ID[A]
140
TC[°C]
1 ms
101
10 ms
10-1
DC
100
10-1
10-1
100
101
102
10-2
10-6
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
6
Rev.2.5,2021-09-15
OptiMOSTM3Power-Transistor,60V
BSC067N06LS3G
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
200
20
3V
10 V
180
18
4.5 V
16
140
14
4.5 V
RDS(on)[mΩ]
120
ID[A]
4V
3.2 V
5V
160
3.5 V
100
4V
80
12
10
5V
8
6V
60
6
40
3.5 V
4
20
3.2 V
3V
2.8 V
2
0
0
1
2
0
3
10 V
0
40
80
VDS[V]
120
160
200
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
100
150
80
100
ID[A]
gfs[S]
60
40
50
20
150 °C
0
0
1
2
25 °C
3
4
5
0
0
VGS[V]
80
120
160
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
40
gfs=f(ID);Tj=25°C
7
Rev.2.5,2021-09-15
OptiMOSTM3Power-Transistor,60V
BSC067N06LS3G
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
12
2.5
11
10
2.0
9
350 µA
8
max
1.5
VGS(th)[V]
RDS(on)[mΩ]
7
6
typ
5
35 µA
1.0
4
3
0.5
2
1
0
-60
-20
20
60
100
140
0.0
-60
180
-20
20
Tj[°C]
60
100
140
180
Tj[°C]
RDS(on)=f(Tj);ID=50A;VGS=10V
VGS(th)=f(Tj);VGS=VDS;parameter:ID
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
103
10
25 °C
25 °C, max
150 °C
150 °C, max
Ciss
103
Coss
IF[A]
C[pF]
102
102
Crss
101
101
100
0
20
40
60
100
0.00
0.50
VDS[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
1.00
1.50
2.00
VSD[V]
IF=f(VSD);parameter:Tj
8
Rev.2.5,2021-09-15
OptiMOSTM3Power-Transistor,60V
BSC067N06LS3G
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
2
10
12
30 V
10
12 V
48 V
100 °C
25 °C
8
VGS[V]
IAV[A]
125 °C
101
6
4
2
100
10-1
100
101
102
103
tAV[µs]
0
0
10
20
30
40
50
60
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=50Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Diagram Gate charge waveforms
70
VBR(DSS)[V]
60
50
40
-60
-20
20
60
100
140
180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
9
Rev.2.5,2021-09-15
OptiMOSTM3Power-Transistor,60V
BSC067N06LS3G
5PackageOutlines
Figure1OutlinePG-TDSON-8,dimensionsinmm
Final Data Sheet
10
Rev.2.5,2021-09-15
OptiMOSTM3Power-Transistor,60V
BSC067N06LS3G
Figure2OutlineFootprint(TDSON-8)
Final Data Sheet
11
Rev.2.5,2021-09-15
OptiMOSTM3Power-Transistor,60V
BSC067N06LS3G
RevisionHistory
BSC067N06LS3 G
Revision:2021-09-15,Rev.2.5
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.5
2021-09-15
Update current rating and footnotes
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Final Data Sheet
12
Rev.2.5,2021-09-15