BSC0702LS

BSC0702LS MOSFET OptiMOSTMPower-Transistor,60V SuperSO8 8 Features •Idealforhigh-frequencyswitching •Optimizedforchargers •100%avalanchetested •Superiorthermalresistance •N-channel,Logiclevel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •QualifiedforStandardGradeapplications 7 5 6 4 1 2 Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 2.7 mΩ ID 100 A Qoss 43 nC QG(0..4.5V) 24 nC 3 3 2 4 8 1 8D S2 7D S3 6D G4 5D Package Marking RelatedLinks BSC0702LS PG-TDSON-8 0702LS - 1 7 S1 Type/OrderingCode Final Data Sheet 6 5 Rev.2.3,2016-10-25 OptiMOSTMPower-Transistor,60V BSC0702LS TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Final Data Sheet 2 Rev.2.3,2016-10-25 OptiMOSTMPower-Transistor,60V BSC0702LS 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 100 84 23 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TA=25°C,RthJA=50K/W1) - 400 A TC=25°C - - 100 mJ ID=50A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 83 2.5 W TC=25°C TA=25°C,RthJA=50K/W2) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse3) EAS Gate source voltage 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Device on PCB, 6 cm2 cooling area1) Values Min. Typ. Max. RthJC - 0.9 1.5 K/W - RthJA - - 50 K/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See Diagram 3 for more detailed information 3) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.3,2016-10-25 OptiMOSTMPower-Transistor,60V BSC0702LS 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 1.7 2.3 V VDS=VGS,ID=49µA - 0.5 10 1 100 µA VDS=60V,VGS=0V,Tj=25°C VDS=60V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 2.3 3.1 2.7 3.9 mΩ VGS=10V,ID=50A VGS=4.5V,ID=25A Gate resistance1) RG - 1.3 1.95 Ω - Transconductance gfs 60 120 - S |VDS|>2|ID|RDS(on)max,ID=50A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 60 - Gate threshold voltage VGS(th) 1.1 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics1) Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 3300 4400 pF VGS=0V,VDS=30V,f=1MHz Output capacitance Coss - 670 890 pF VGS=0V,VDS=30V,f=1MHz Reverse transfer capacitance Crss - 33 58 pF VGS=0V,VDS=30V,f=1MHz Turn-on delay time td(on) - 7.7 - ns VDD=30V,VGS=10V,ID=50A, RG,ext=1.6Ω Rise time tr - 4.8 - ns VDD=30V,VGS=10V,ID=50A, RG,ext=1.6Ω Turn-off delay time td(off) - 25 - ns VDD=30V,VGS=10V,ID=50A, RG,ext=1.6Ω Fall time tf - 5.4 - ns VDD=30V,VGS=10V,ID=50A, RG,ext=1.6Ω Unit Note/TestCondition Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Gate charge at threshold Values Min. Typ. Max. Qgs - 10 - nC VDD=30V,ID=50A,VGS=0to4.5V Qg(th) - 6 - nC VDD=30V,ID=50A,VGS=0to4.5V Gate to drain charge Qgd - 8 11 nC VDD=30V,ID=50A,VGS=0to4.5V Switching charge Qsw - 12 - nC VDD=30V,ID=50A,VGS=0to4.5V Gate charge total Qg - 24 30 nC VDD=30V,ID=50A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.9 - V VDD=30V,ID=50A,VGS=0to4.5V Gate charge total, sync. FET Qg(sync) - 43 - nC VDS=0.1V,VGS=0to10V Qoss - 43 58 nC VDD=30V,VGS=0V 1) 1) 1) Output charge 1) 2) Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.3,2016-10-25 OptiMOSTMPower-Transistor,60V BSC0702LS Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) Values Unit Note/TestCondition 69 A TC=25°C - 276 A TC=25°C - 0.8 1.2 V VGS=0V,IF=50A,Tj=25°C trr - 40 80 ns VR=30V,IF=50A,diF/dt=100A/µs Qrr - 36 72 nC VR=30V,IF=50A,diF/dt=100A/µs Min. Typ. Max. IS - - IS,pulse - VSD Defined by design. Not subject to production test Final Data Sheet 5 Rev.2.3,2016-10-25 OptiMOSTMPower-Transistor,60V BSC0702LS 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 100 120 100 80 80 ID[A] Ptot[W] 60 60 40 40 20 0 20 0 25 50 75 100 125 150 0 175 0 25 50 75 TC[°C] 100 125 150 175 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 10 µs 102 100 101 0.2 ZthJC[K/W] ID[A] 100 µs 0.5 1 ms 10 ms 0.1 10-1 0.05 0.02 DC 0.01 100 10-1 10-1 single pulse 10-2 100 101 102 10-3 10-6 10-5 VDS[V] 10-3 10-2 10-1 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-4 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.3,2016-10-25 OptiMOSTMPower-Transistor,60V BSC0702LS Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 400 8 360 5V 7 4.5 V 3V 320 6 3.2 V 280 RDS(on)[mΩ] 4V ID[A] 3.5 V 5 240 200 160 4V 4.5 V 4 5V 3 7V 3.5 V 120 10 V 2 80 3.2 V 1 3V 40 2.8 V 0 0.0 0.5 1.0 1.5 0 2.0 0 50 100 VDS[V] 150 200 250 300 350 400 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 400 160 360 320 120 280 25 °C 150 °C gfs[S] ID[A] 240 200 80 160 120 40 80 40 0 0 2 4 6 0 0 VGS[V] 40 60 80 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 20 gfs=f(ID);Tj=25°C 7 Rev.2.3,2016-10-25 OptiMOSTMPower-Transistor,60V BSC0702LS Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 5.0 3 4.5 4.0 3.5 2 3.0 2.5 490 µA VGS(th)[V] RDS(on)[mΩ] max typ 2.0 49 µA 1 1.5 1.0 0.5 0.0 -60 -20 20 60 100 140 0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=50A;VGS=10V VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 150 °C 25°C max 150°C max Ciss 103 102 IF[A] C[pF] Coss 102 101 Crss 101 0 20 40 60 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 8 Rev.2.3,2016-10-25 OptiMOSTMPower-Transistor,60V BSC0702LS Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 9 8 25 °C 30 V 100 °C 7 125 °C 12 V 48 V VGS[V] IAV[A] 6 101 5 4 3 2 1 100 100 101 102 103 0 0 10 tAV[µs] 20 30 40 50 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=50Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 70 VBR(DSS)[V] 65 60 55 50 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.3,2016-10-25 OptiMOSTMPower-Transistor,60V BSC0702LS 5PackageOutlines   Figure1OutlinePG-TDSON-8,dimensionsinmm Final Data Sheet 10 Rev.2.3,2016-10-25 OptiMOSTMPower-Transistor,60V BSC0702LS   Figure2OutlineFootprint(TDSON-8) Final Data Sheet 11 Rev.2.3,2016-10-25 OptiMOSTMPower-Transistor,60V BSC0702LS RevisionHistory BSC0702LS Revision:2016-10-25,Rev.2.3 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-06-09 Release of final version 2.1 2016-06-13 Insert Rds(on) max at Vgs 4.5 2.2 2016-06-21 Delete heading on first page 2.3 2016-10-25 Update " Features " TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 12 Rev.2.3,2016-10-25