BSC077N12NS3G

BSC077N12NS3G MOSFET OptiMOSTM3Power-Transistor,120V SuperSO8 8 Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •150°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccordingtoIEC61249-2-21 Value Unit VDS 120 V RDS(on),max 7.7 mΩ ID 98 A Type/OrderingCode Package BSC077N12NS3 G PG-TDSON-8 1) 5 6 2 Marking 077N12NS 3 6 5 4 1 Table1KeyPerformanceParameters Parameter 7 3 2 4 7 8 1 S1 8D S2 7D S3 6D G4 5D RelatedLinks - J-STD20 and JESD22 Final Data Sheet 1 Rev.2.8,2015-12-15 OptiMOSTM3Power-Transistor,120V BSC077N12NS3G TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.8,2015-12-15 OptiMOSTM3Power-Transistor,120V BSC077N12NS3G 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 98 61 13.4 A TC=25°C TC=100°C TA=25°C,RthJA=45K/W1) - 392 A TC=25°C - - 330 mJ ID=50A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 139 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse EAS Gate source voltage 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Thermal resistance, junction - case, top Values Min. Typ. Max. RthJC - 0.5 0.9 K/W - RthJC - - 18 K/W - Thermal resistance, junction - ambient, RthJA minimal footprint - - 75 K/W - Thermal resistance, junction - ambient, RthJA 6 cm2 cooling area1) - - 50 K/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) see Diagram 3 Final Data Sheet 3 Rev.2.8,2015-12-15 OptiMOSTM3Power-Transistor,120V BSC077N12NS3G 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3 4 V VDS=VGS,ID=110µA - 0.01 10 1 100 µA VDS=100V,VGS=0V,Tj=25°C VDS=100V,VGS=0V,Tj=125°C IGSS - 1 100 nA VGS=20V,VDS=0V RDS(on) - 6.6 7.7 mΩ VGS=10V,ID=50A Gate resistance RG - 1 1.5 Ω - Transconductance gfs 40 80 - S |VDS|>2|ID|RDS(on)max,ID=50A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 120 - Gate threshold voltage VGS(th) 2 Zero gate voltage drain current IDSS Gate-source leakage current Drain-source on-state resistance 1) Table5Dynamiccharacteristics1) Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 4300 5700 pF VGS=0V,VDS=60V,f=1MHz Output capacitance Coss - 550 730 pF VGS=0V,VDS=60V,f=1MHz Reverse transfer capacitance Crss - 28 49 pF VGS=0V,VDS=60V,f=1MHz Turn-on delay time td(on) - 15 - ns VDD=60V,VGS=10V,ID=25A, RG,ext=2.7Ω Rise time tr - 8 - ns VDD=60V,VGS=10V,ID=25A, RG,ext=2.7Ω Turn-off delay time td(off) - 26 - ns VDD=60V,VGS=10V,ID=25A, RG,ext=2.7Ω Fall time tf - 7 - ns VDD=60V,VGS=10V,ID=25A, RG,ext=2.7Ω Unit Note/TestCondition Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 21 - nC VDD=60V,ID=25A,VGS=0to10V Gate to drain charge Qgd - 15 - nC VDD=60V,ID=25A,VGS=0to10V Switching charge Qsw - 29 - nC VDD=60V,ID=25A,VGS=0to10V Gate charge total Qg - 66 88 nC VDD=60V,ID=25A,VGS=0to10V Gate plateau voltage Vplateau - 4.7 - V VDD=60V,ID=25A,VGS=0to10V Qoss - 76 100 nC VDD=60V,VGS=0V 1) 1) Output charge 1) 2) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition. Final Data Sheet 4 Rev.2.8,2015-12-15 OptiMOSTM3Power-Transistor,120V BSC077N12NS3G Table7Reversediode Parameter Symbol Diode continous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) Values Unit Note/TestCondition 98 A TC=25°C - 392 A TC=25°C - 0.9 1.2 V VGS=0V,IF=50A,Tj=25°C trr - 98 - ns VR=60V,IF=25,diF/dt=100A/µs Qrr - 264 - nC VR=60V,IF=25,diF/dt=100A/µs Min. Typ. Max. IS - - IS,pulse - VSD Defined by design. Not subject to production test. Final Data Sheet 5 Rev.2.8,2015-12-15 OptiMOSTM3Power-Transistor,120V BSC077N12NS3G 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 160 120 100 120 ID[A] Ptot[W] 80 80 60 40 40 20 0 0 40 80 120 0 160 0 40 80 TC[°C] 120 160 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 100 10 1 µs 0.5 10 µs 100 µs 102 0.2 ZthJC[K/W] ID[A] 1 ms 10 ms 101 0.1 10-1 0.05 0.02 DC 0.01 100 single pulse 10-1 10-1 100 101 102 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.8,2015-12-15 OptiMOSTM3Power-Transistor,120V BSC077N12NS3G Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 160 20 10 V 4.5 V 7V 5V 6V 6V 15 80 RDS(on)[mΩ] ID[A] 120 5.5 V 5.5 V 10 7V 10 V 40 5 5V 4.5 V 0 0 1 2 3 4 0 5 0 50 VDS[V] 100 ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 160 160 120 120 gfs[S] ID[A] 150 ID[A] 80 40 80 40 150 °C 25 °C 0 0 2 4 6 8 0 0 20 VGS[V] 60 80 100 120 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 40 gfs=f(ID);Tj=25°C 7 Rev.2.8,2015-12-15 OptiMOSTM3Power-Transistor,120V BSC077N12NS3G Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 20 4.0 3.5 1100 µA 15 3.0 110 µA VGS(th)[V] RDS(on)[mΩ] 2.5 10 98 % 2.0 1.5 typ 5 1.0 0.5 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=50A;VGS=10V VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 Ciss 25 °C 150 °C 25 °C, 98% 150 °C, 98% Coss 103 102 IF[A] C[pF] 102 Crss 101 101 100 0 20 40 60 80 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 8 Rev.2.8,2015-12-15 OptiMOSTM3Power-Transistor,120V BSC077N12NS3G Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 96 V 8 25 °C 60 V 100 °C 24 V 6 VGS[V] IAS[A] 125 °C 101 4 2 100 100 101 102 103 0 0 tAV[µs] 20 40 60 80 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=25Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 135 130 VBR(DSS)[V] 125 120 115 110 105 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.8,2015-12-15 OptiMOSTM3Power-Transistor,120V BSC077N12NS3G 5PackageOutlines   Figure1OutlinePG-TDSON-8,dimensionsinmm Final Data Sheet 10 Rev.2.8,2015-12-15 OptiMOSTM3Power-Transistor,120V BSC077N12NS3G Dimension in mm Figure2OutlineTDSON-8Tape Final Data Sheet 11 Rev.2.8,2015-12-15 OptiMOSTM3Power-Transistor,120V BSC077N12NS3G   Figure3OutlineFootprintTDSON-8 Final Data Sheet 12 Rev.2.8,2015-12-15 OptiMOSTM3Power-Transistor,120V BSC077N12NS3G RevisionHistory BSC077N12NS3 G Revision:2015-12-15,Rev.2.8 Previous Revision Revision Date Subjects (major changes since last revision) 2.7 2014-10-02 Rev. 2.7 2.8 2015-12-15 Update of dynamic parameters td(on), td(off), tr, tf TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 13 Rev.2.8,2015-12-15