BSC080N12LSGATMA1

BSC080N12LS MOSFET OptiMOSTM3Power-Transistor,120V PG-TDSON-8 8 Features 7 •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •150°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccordingtoIEC61249-2-21 5 6 6 7 5 Pin 1 8 4 2 3 3 2 4 1 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Drain Pin 5-8 Table1KeyPerformanceParameters Parameter Value Unit VDS 120 V Gate Pin 4 *1 Source Pin 1-3 *1: Internal body diode RDS(on),max 8.0 mΩ ID 99 A Qoss 79 nC QG(0V..10V) 79 nC Type/OrderingCode Package BSC080N12LS PG-TDSON-8 Final Data Sheet 1 Marking RelatedLinks 080N12LS - Rev.2.1,2022-11-09 OptiMOSTM3Power-Transistor,120V BSC080N12LS TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.1,2022-11-09 OptiMOSTM3Power-Transistor,120V BSC080N12LS 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 99 77 12 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TA=25°C,RthJA=45°C/W1) - 394 A TA=25°C - - 377 mJ ID=50A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 156 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse3) EAS Gate source voltage 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Thermal resistance, junction - case, top Values Min. Typ. Max. RthJC - 0.45 0.8 °C/W - RthJC - - 18 °C/W - Thermal resistance, junction - ambient, RthJA minimal footprint - - 62 °C/W - Thermal resistance, juntion - ambient, 6 cm² cooling area2) - - 45 °C/W - RthJA 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See Diagram 3 for more detailed information 3) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.1,2022-11-09 OptiMOSTM3Power-Transistor,120V BSC080N12LS 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 1.85 2.4 V VDS=VGS,ID=112µA - 0.01 1 1 100 µA VDS=120V,VGS=0V,Tj=25°C VDS=120V,VGS=0V,Tj=125°C IGSS - 1 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 6.5 7.8 8.0 9.5 mΩ VGS=10V,ID=50A VGS=4.5V,ID=25A Gate resistance RG - 0.85 - Ω - Transconductance gfs 60 120 - S |VDS|≥2|ID|RDS(on)max,ID=50A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 120 - Gate threshold voltage VGS(th) 1.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance1) Values Min. Typ. Max. Ciss - 5600 7400 pF VGS=0V,VDS=60V,f=1MHz Coss - 590 770 pF VGS=0V,VDS=60V,f=1MHz Reverse transfer capacitance Crss - 28 42 pF VGS=0V,VDS=60V,f=1MHz Turn-on delay time td(on) - 11 - ns VDD=60V,VGS=10V,ID=25A, RG,ext=1.6Ω Rise time tr - 9 - ns VDD=60V,VGS=10V,ID=25A, RG,ext=1.6Ω Turn-off delay time td(off) - 37 - ns VDD=60V,VGS=10V,ID=25A, RG,ext=1.6Ω Fall time tf - 13 - ns VDD=60V,VGS=10V,ID=25A, RG,ext=1.6Ω Unit Note/TestCondition Output capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 17.5 - nC VDD=60V,ID=25A,VGS=0to10V Gate to drain charge Qgd - 12.9 - nC VDD=60V,ID=25A,VGS=0to10V Switching charge Qsw - 20.1 - nC VDD=60V,ID=25A,VGS=0to10V Gate charge total Qg - 79 - nC VDD=60V,ID=25A,VGS=0to10V Gate plateau voltage Vplateau - 3.1 - V VDD=60V,ID=25A,VGS=0to10V Output charge Qoss - 79 - nC VDD=60V,VGS=0V 1) 2) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.1,2022-11-09 OptiMOSTM3Power-Transistor,120V BSC080N12LS Table7Reversediode Parameter Symbol Diode continuous forward current Values Unit Note/TestCondition 109 A TC=25°C - 394 A TC=25°C - 0.88 1.2 V VGS=0V,IF=50A,Tj=25°C trr - 107 - ns VR=60V,IF=25A,diF/dt=100A/µs Qrr - 220 - nC VR=60V,IF=25A,diF/dt=100A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery time Reverse recovery charge Final Data Sheet 5 Rev.2.1,2022-11-09 OptiMOSTM3Power-Transistor,120V BSC080N12LS 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 160 100 140 80 120 60 ID[A] Ptot[W] 100 80 40 60 40 20 20 0 0 20 40 60 80 100 120 140 0 160 0 20 40 60 TC[°C] 80 100 120 140 160 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 single pulse 0.01 0.02 0.05 0.1 0.2 0.5 1 µs 10 µs 102 1 ms 100 µs 100 ID[A] ZthJC[K/W] 101 100 DC 10-1 10 ms 10-1 10-2 100 101 102 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.1,2022-11-09 OptiMOSTM3Power-Transistor,120V BSC080N12LS Diagram5:Typ.outputcharacteristics 500 Diagram6:Typ.drain-sourceonresistance 20.0 10 V 17.5 400 5V 15.0 3 V 3.5 V ID[A] 300 4.5 V 200 RDS(on)[mΩ] 12.5 4V 10.0 4.5 V 5V 7.5 10 V 4V 5.0 100 2.5 3.5 V 0 3V 2.8 V 0 1 2 3 4 0.0 5 0 40 80 120 VDS[V] 160 200 240 ID[A] ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance 400 20.0 25 °C 350 17.5 300 15.0 150 °C 150 °C 12.5 RDS(on)[mΩ] ID[A] 250 200 150 10.0 7.5 25 °C 100 5.0 50 2.5 0 0 1 2 3 4 5 VGS[V] 0 2 4 6 8 10 VGS[V] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 0.0 RDS(on)=f(VGS),ID=50A;parameter:Tj 7 Rev.2.1,2022-11-09 OptiMOSTM3Power-Transistor,120V BSC080N12LS Diagram10:Typ.gatethresholdvoltage 2.4 2.4 2.0 2.0 1.6 1.6 1120 µA VGS(th)[V] RDS(on)(normalizedto25°C) Diagram9:Normalizeddrain-sourceonresistance 1.2 1.2 112 µA 0.8 0.8 0.4 0.4 0.0 -80 -40 0 40 80 120 0.0 -80 160 -40 0 Tj[°C] 40 80 120 160 Tj[°C] RDS(on)=f(Tj),ID=50A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 25 °C, max 150 °C 150 °C, max Ciss Coss 102 IF[A] 102 C[pF] 103 101 Crss 1 10 0 20 40 60 80 100 120 100 0.00 0.25 VDS[V] 0.75 1.00 1.25 1.50 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.50 IF=f(VSD);parameter:Tj 8 Rev.2.1,2022-11-09 OptiMOSTM3Power-Transistor,120V BSC080N12LS Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 24 V 60 V 96 V 8 25 °C 101 100 °C IAV[A] VGS[V] 6 4 125 °C 0 10 2 10-1 100 101 102 103 tAV[µs] 0 0 10 20 30 40 50 60 70 80 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=25Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 131 129 127 VBR(DSS)[V] 125 123 121 119 117 115 113 -80 -40 0 40 80 120 160 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.1,2022-11-09 OptiMOSTM3Power-Transistor,120V BSC080N12LS 5PackageOutlines PACKAGE - GROUP NUMBER: DIMENSIONS A b c D D1 D2 E E1 e L L1 PG-TDSON-8-U08 MILLIMETERS MIN. MAX. 0.90 1.20 0.34 0.54 0.15 0.35 4.80 5.35 3.90 4.40 0.00 0.22 5.70 6.10 4.05 4.25 1.27 0.45 0.65 0.45 0.65 Figure1OutlinePG-TDSON-8,dimensionsinmm Final Data Sheet 10 Rev.2.1,2022-11-09 OptiMOSTM3Power-Transistor,120V BSC080N12LS   Figure2OutlineFootprint(TDSON-8) Final Data Sheet 11 Rev.2.1,2022-11-09 OptiMOSTM3Power-Transistor,120V BSC080N12LS Dimension in mm Figure3OutlineTape(TDSON-8) Final Data Sheet 12 Rev.2.1,2022-11-09 OptiMOSTM3Power-Transistor,120V BSC080N12LS RevisionHistory BSC080N12LS Revision:2022-11-09,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2019-11-25 Release of final version 2.1 2022-11-09 Bug fix, update outline drawing and footnotes Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 13 Rev.2.1,2022-11-09