BSC0901NS

BSC0901NS MOSFET OptiMOSTMPower-MOSFET,30V SuperSO8 8 Features •OptimizedforhighperformanceBuckconverter •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Value Unit VDS 30 V RDS(on),max 1.9 mΩ ID 149 A QOSS 25 nC QG(0V..10V) 44 nC 5 6 2 3 3 2 4 7 8 1 S1 8D S2 7D S3 6D G4 5D Type/OrderingCode Package Marking RelatedLinks BSC0901NS PG-TDSON-8 0901NS - 1) 6 5 4 1 Table1KeyPerformanceParameters Parameter 7 J-STD20 and JESD22 Final Data Sheet 1 Rev.2.3,2020-03-13 OptiMOSTMPower-MOSFET,30V BSC0901NS TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.3,2020-03-13 OptiMOSTMPower-MOSFET,30V BSC0901NS 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 149 94 133 84 28 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C,RthJA=50K/W2) - 596 A TC=25°C - - 50 A TC=25°C EAS - - 80 mJ ID=50A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 69 2.5 W TC=25°C TA=25°C,RthJA=50K/W2) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche current, single pulse IAS Avalanche energy, single pulse Continuous drain current1) Pulsed drain current3) 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - - 1.8 K/W - Thermal resistance, junction - case, top RthJC - - 20 K/W - Device on PCB, 6 cm2 cooling area2) RthJA - - 50 K/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information 4) See figure 13 for more detailed information Final Data Sheet 3 Rev.2.3,2020-03-13 OptiMOSTMPower-MOSFET,30V BSC0901NS 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA - 2.0 V VDS=VGS,ID=250µA - 0.1 10 1 100 µA VDS=30V,VGS=0V,Tj=25°C VDS=30V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 1.9 1.6 2.4 1.9 mΩ VGS=4.5V,ID=30A VGS=10V,ID=30A Gate resistance RG 0.5 0.8 1.3 Ω - Transconductance gfs 70 140 - S |VDS|>2|ID|RDS(on)max,ID=30A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 30 - Gate threshold voltage VGS(th) 1.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance1) Values Min. Typ. Max. Ciss - 2800 3700 pF VGS=0V,VDS=15V,f=1MHz Output capacitance1) Coss - 960 1300 pF VGS=0V,VDS=15V,f=1MHz Reverse transfer capacitance Crss - 140 - pF VGS=0V,VDS=15V,f=1MHz Turn-on delay time td(on) - 5.4 - ns VDD=15V,VGS=10V,ID=30A, RG=1.6Ω Rise time tr - 6.8 - ns VDD=15V,VGS=10V,ID=30A, RG=1.6Ω Turn-off delay time td(off) - 28 - ns VDD=15V,VGS=10V,ID=30A, RG=1.6Ω Fall time tf - 4.8 - ns VDD=15V,VGS=10V,ID=30A, RG=1.6Ω Unit Note/TestCondition Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge1) Gate charge at threshold Values Min. Typ. Max. Qgs - 7.0 9.5 nC VDD=15V,ID=30A,VGS=0to4.5V Qg(th) - 4.6 - nC VDD=15V,ID=30A,VGS=0to4.5V Gate to drain charge Qgd - 6.5 9.5 nC VDD=15V,ID=30A,VGS=0to4.5V Switching charge Qsw - 8.9 - nC VDD=15V,ID=30A,VGS=0to4.5V Gate charge total Qg - 22 29 nC VDD=15V,ID=30A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.4 - V VDD=15V,ID=30A,VGS=0to4.5V Gate charge total1) Qg - 44 59 nC VDD=15V,ID=30A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 18 - nC VDS=0.1V,VGS=0to4.5V Qoss - 25 33 nC VDD=15V,VGS=0V 1) 1) 1) Output charge 1) 2) Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.3,2020-03-13 OptiMOSTMPower-MOSFET,30V BSC0901NS Table7Reversediode Parameter Symbol Diode continuous forward current Values Unit Note/TestCondition 69 A TC=25°C - 596 A TC=25°C - 0.82 1 V VGS=0V,IF=30A,Tj=25°C - 20 - nC VR=15V,IF=IS,diF/dt=400A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery charge Qrr Final Data Sheet 5 Rev.2.3,2020-03-13 OptiMOSTMPower-MOSFET,30V BSC0901NS 4Electricalcharacteristicsdiagrams Diagram2:Draincurrent 80 160 70 140 60 120 50 100 ID[A] Ptot[W] Diagram1:Powerdissipation 40 80 30 60 20 40 10 20 0 0 40 80 120 0 160 0 20 40 60 TC[°C] 80 100 120 140 160 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 10 µs 102 100 µs 100 1 ms ZthJC[K/W] ID[A] 10 ms 0.5 1 10 DC 0.2 0.1 0.05 10-1 0.02 100 0.01 single pulse 10-1 10-1 100 101 102 10-2 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.3,2020-03-13 OptiMOSTMPower-MOSFET,30V BSC0901NS Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 400 4 10 V 5V 4.5 V 4V 300 3.5 V 3 RDS(on)[mΩ] ID[A] 3.3 V 3.3 V 200 4.5 V 5V 2 8V 10 V 3V 100 0 1 0 1 2 0 3 0 10 20 VDS[V] 30 40 50 80 100 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 400 300 250 320 200 ID[A] gfs[S] 240 150 160 100 80 50 150 °C 25 °C 0 0 1 2 3 4 5 0 0 VGS[V] 40 60 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 20 gfs=f(ID);Tj=25°C 7 Rev.2.3,2020-03-13 OptiMOSTMPower-MOSFET,30V BSC0901NS Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 3.0 2.5 2.5 2.0 1.5 VGS(th)[V] RDS(on)[mΩ] 2.0 typ 1.5 1.0 1.0 0.5 0.5 0.0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=30A;VGS=10V VGS(th)=f(Tj);VGS=VDS;ID=250µA Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 25 °C, max 150 °C 150 °C, max Ciss Coss 102 IF[A] C[pF] 103 Crss 2 101 10 101 0 5 10 15 20 25 30 100 0.00 0.25 VDS[V] 0.75 1.00 1.25 1.50 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.50 IF=f(VSD);parameter:Tj 8 Rev.2.3,2020-03-13 OptiMOSTMPower-MOSFET,30V BSC0901NS Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 15 V 10 6V 24 V 25 °C 8 100 °C VGS[V] IAV[A] 125 °C 1 10 6 4 2 100 100 101 102 103 tAV[µs] 0 0 10 20 30 40 50 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=30Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 34 32 VBR(DSS)[V] 30 28 26 24 22 20 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.3,2020-03-13 OptiMOSTMPower-MOSFET,30V BSC0901NS 5PackageOutlines DOCUMENT NO. Z8B00003332 REVISION 07 DIMENSION A A1 b D D1 D2 E E1 E2 e L M MILLIMETERS MIN. MAX. 0.90 1.20 0.15 0.35 0.34 0.54 4.80 5.35 3.90 4.40 0.03 0.23 5.70 6.10 5.90 6.42 3.88 4.31 1.27 0.45 0.71 0.45 0.69 SCALE 10:1 0 1 2 3mm EUROPEAN PROJECTION ISSUE DATE 06.06.2019 Figure1OutlinePG-TDSON-8,dimensionsinmm Final Data Sheet 10 Rev.2.3,2020-03-13 OptiMOSTMPower-MOSFET,30V BSC0901NS PG-TDSON-8: RecommenGHd BoDrdpads & Apertures 1.905 1.905 1.27 3x 0.6 1.27 3x copper Figure 2 Final Data Sheet 1.6 0.2 1.27 3x 0.825 2.863 0.5 0.925 2.863 1.27 3x 1.905 0.875 1.5 0.75 0.2 2.9 4.455 3.325 0.8 0.5 1.5 0.4 1.905 stencil apertures solder mask all dimensions in mm Outline Boardpads (TDSON-8), dimensions in mm 11 Rev.2.3,2020-03-13 OptiMOS TM Power-MOSFET , 30 V BSC0901NS Dimension in mm Figure 3 Final Data Sheet Outline Tape (TDSON-8) 12 Rev. 2.3, 2020-03-13 OptiMOS TM Power-MOSFET , 30 V BSC0901NS Revision History BSC0901NS Revision: 2020-03-13, Rev. 2.3 Previous Revision Revision 2.2 2.3 Date Subjects (major changes since last revision) 2020-02-17 Update package drawings, add Rg min and max, add Ciss and Coss max, add Gate Charges max values, and update footnotes 2020-03-13 Update current rating Trademarks All referenced product or service names and trademarks are the property of their respective owners. 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The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 13 Rev. 2.3, 2020-03-13