BSC0901NS
MOSFET
OptiMOSTMPower-MOSFET,30V
SuperSO8
8
Features
•OptimizedforhighperformanceBuckconverter
•Verylowon-resistanceRDS(on)@VGS=4.5V
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Value
Unit
VDS
30
V
RDS(on),max
1.9
mΩ
ID
149
A
QOSS
25
nC
QG(0V..10V)
44
nC
5
6
2
3
3
2
4
7
8
1
S1
8D
S2
7D
S3
6D
G4
5D
Type/OrderingCode
Package
Marking
RelatedLinks
BSC0901NS
PG-TDSON-8
0901NS
-
1)
6
5
4
1
Table1KeyPerformanceParameters
Parameter
7
J-STD20 and JESD22
Final Data Sheet
1
Rev.2.3,2020-03-13
OptiMOSTMPower-MOSFET,30V
BSC0901NS
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.2.3,2020-03-13
OptiMOSTMPower-MOSFET,30V
BSC0901NS
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Values
Unit
Note/TestCondition
149
94
133
84
28
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=4.5V,TC=25°C
VGS=4.5V,TC=100°C
VGS=10V,TA=25°C,RthJA=50K/W2)
-
596
A
TC=25°C
-
-
50
A
TC=25°C
EAS
-
-
80
mJ
ID=50A,RGS=25Ω
Gate source voltage
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
69
2.5
W
TC=25°C
TA=25°C,RthJA=50K/W2)
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
ID,pulse
-
Avalanche current, single pulse
IAS
Avalanche energy, single pulse
Continuous drain current1)
Pulsed drain current3)
4)
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case,
bottom
Values
Min.
Typ.
Max.
RthJC
-
-
1.8
K/W
-
Thermal resistance, junction - case,
top
RthJC
-
-
20
K/W
-
Device on PCB,
6 cm2 cooling area2)
RthJA
-
-
50
K/W
-
1)
Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See figure 3 for more detailed information
4)
See figure 13 for more detailed information
Final Data Sheet
3
Rev.2.3,2020-03-13
OptiMOSTMPower-MOSFET,30V
BSC0901NS
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
-
2.0
V
VDS=VGS,ID=250µA
-
0.1
10
1
100
µA
VDS=30V,VGS=0V,Tj=25°C
VDS=30V,VGS=0V,Tj=125°C
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
1.9
1.6
2.4
1.9
mΩ
VGS=4.5V,ID=30A
VGS=10V,ID=30A
Gate resistance
RG
0.5
0.8
1.3
Ω
-
Transconductance
gfs
70
140
-
S
|VDS|>2|ID|RDS(on)max,ID=30A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
30
-
Gate threshold voltage
VGS(th)
1.2
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance1)
Values
Min.
Typ.
Max.
Ciss
-
2800
3700
pF
VGS=0V,VDS=15V,f=1MHz
Output capacitance1)
Coss
-
960
1300
pF
VGS=0V,VDS=15V,f=1MHz
Reverse transfer capacitance
Crss
-
140
-
pF
VGS=0V,VDS=15V,f=1MHz
Turn-on delay time
td(on)
-
5.4
-
ns
VDD=15V,VGS=10V,ID=30A,
RG=1.6Ω
Rise time
tr
-
6.8
-
ns
VDD=15V,VGS=10V,ID=30A,
RG=1.6Ω
Turn-off delay time
td(off)
-
28
-
ns
VDD=15V,VGS=10V,ID=30A,
RG=1.6Ω
Fall time
tf
-
4.8
-
ns
VDD=15V,VGS=10V,ID=30A,
RG=1.6Ω
Unit
Note/TestCondition
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge1)
Gate charge at threshold
Values
Min.
Typ.
Max.
Qgs
-
7.0
9.5
nC
VDD=15V,ID=30A,VGS=0to4.5V
Qg(th)
-
4.6
-
nC
VDD=15V,ID=30A,VGS=0to4.5V
Gate to drain charge
Qgd
-
6.5
9.5
nC
VDD=15V,ID=30A,VGS=0to4.5V
Switching charge
Qsw
-
8.9
-
nC
VDD=15V,ID=30A,VGS=0to4.5V
Gate charge total
Qg
-
22
29
nC
VDD=15V,ID=30A,VGS=0to4.5V
Gate plateau voltage
Vplateau
-
2.4
-
V
VDD=15V,ID=30A,VGS=0to4.5V
Gate charge total1)
Qg
-
44
59
nC
VDD=15V,ID=30A,VGS=0to10V
Gate charge total, sync. FET
Qg(sync)
-
18
-
nC
VDS=0.1V,VGS=0to4.5V
Qoss
-
25
33
nC
VDD=15V,VGS=0V
1)
1)
1)
Output charge
1)
2)
Defined by design. Not subject to production test
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.2.3,2020-03-13
OptiMOSTMPower-MOSFET,30V
BSC0901NS
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Values
Unit
Note/TestCondition
69
A
TC=25°C
-
596
A
TC=25°C
-
0.82
1
V
VGS=0V,IF=30A,Tj=25°C
-
20
-
nC
VR=15V,IF=IS,diF/dt=400A/µs
Min.
Typ.
Max.
IS
-
-
Diode pulse current
IS,pulse
-
Diode forward voltage
VSD
Reverse recovery charge
Qrr
Final Data Sheet
5
Rev.2.3,2020-03-13
OptiMOSTMPower-MOSFET,30V
BSC0901NS
4Electricalcharacteristicsdiagrams
Diagram2:Draincurrent
80
160
70
140
60
120
50
100
ID[A]
Ptot[W]
Diagram1:Powerdissipation
40
80
30
60
20
40
10
20
0
0
40
80
120
0
160
0
20
40
60
TC[°C]
80
100
120
140
160
TC[°C]
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
101
10
1 µs
10 µs
102
100 µs
100
1 ms
ZthJC[K/W]
ID[A]
10 ms
0.5
1
10
DC
0.2
0.1
0.05
10-1
0.02
100
0.01
single pulse
10-1
10-1
100
101
102
10-2
10-6
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
6
Rev.2.3,2020-03-13
OptiMOSTMPower-MOSFET,30V
BSC0901NS
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
400
4
10 V
5V
4.5 V
4V
300
3.5 V
3
RDS(on)[mΩ]
ID[A]
3.3 V
3.3 V
200
4.5 V
5V
2
8V
10 V
3V
100
0
1
0
1
2
0
3
0
10
20
VDS[V]
30
40
50
80
100
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
400
300
250
320
200
ID[A]
gfs[S]
240
150
160
100
80
50
150 °C
25 °C
0
0
1
2
3
4
5
0
0
VGS[V]
40
60
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
20
gfs=f(ID);Tj=25°C
7
Rev.2.3,2020-03-13
OptiMOSTMPower-MOSFET,30V
BSC0901NS
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
3.0
2.5
2.5
2.0
1.5
VGS(th)[V]
RDS(on)[mΩ]
2.0
typ
1.5
1.0
1.0
0.5
0.5
0.0
-60
-20
20
60
100
140
0.0
-60
180
-20
20
Tj[°C]
60
100
140
180
Tj[°C]
RDS(on)=f(Tj);ID=30A;VGS=10V
VGS(th)=f(Tj);VGS=VDS;ID=250µA
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
103
10
25 °C
25 °C, max
150 °C
150 °C, max
Ciss
Coss
102
IF[A]
C[pF]
103
Crss
2
101
10
101
0
5
10
15
20
25
30
100
0.00
0.25
VDS[V]
0.75
1.00
1.25
1.50
VSD[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
0.50
IF=f(VSD);parameter:Tj
8
Rev.2.3,2020-03-13
OptiMOSTMPower-MOSFET,30V
BSC0901NS
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
2
10
12
15 V
10
6V
24 V
25 °C
8
100 °C
VGS[V]
IAV[A]
125 °C
1
10
6
4
2
100
100
101
102
103
tAV[µs]
0
0
10
20
30
40
50
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=30Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Diagram Gate charge waveforms
34
32
VBR(DSS)[V]
30
28
26
24
22
20
-60
-20
20
60
100
140
180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
9
Rev.2.3,2020-03-13
OptiMOSTMPower-MOSFET,30V
BSC0901NS
5PackageOutlines
DOCUMENT NO.
Z8B00003332
REVISION
07
DIMENSION
A
A1
b
D
D1
D2
E
E1
E2
e
L
M
MILLIMETERS
MIN.
MAX.
0.90
1.20
0.15
0.35
0.34
0.54
4.80
5.35
3.90
4.40
0.03
0.23
5.70
6.10
5.90
6.42
3.88
4.31
1.27
0.45
0.71
0.45
0.69
SCALE 10:1
0
1
2
3mm
EUROPEAN PROJECTION
ISSUE DATE
06.06.2019
Figure1OutlinePG-TDSON-8,dimensionsinmm
Final Data Sheet
10
Rev.2.3,2020-03-13
OptiMOSTMPower-MOSFET,30V
BSC0901NS
PG-TDSON-8: RecommenGHd BoDrdpads & Apertures
1.905
1.905
1.27
3x
0.6
1.27
3x
copper
Figure 2
Final Data Sheet
1.6
0.2
1.27
3x
0.825
2.863
0.5
0.925
2.863
1.27
3x
1.905
0.875
1.5
0.75
0.2
2.9
4.455
3.325
0.8
0.5
1.5
0.4
1.905
stencil apertures
solder mask
all dimensions in mm
Outline Boardpads (TDSON-8), dimensions in mm
11
Rev.2.3,2020-03-13
OptiMOS TM Power-MOSFET , 30 V
BSC0901NS
Dimension in mm
Figure 3
Final Data Sheet
Outline Tape (TDSON-8)
12
Rev. 2.3, 2020-03-13
OptiMOS TM Power-MOSFET , 30 V
BSC0901NS
Revision History
BSC0901NS
Revision: 2020-03-13, Rev. 2.3
Previous Revision
Revision
2.2
2.3
Date
Subjects (major changes since last revision)
2020-02-17
Update package drawings, add Rg min and max, add Ciss and Coss max, add Gate
Charges max values, and update footnotes
2020-03-13
Update current rating
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
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81726 München, Germany
© 2020 Infineon Technologies AG
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Final Data Sheet
13
Rev. 2.3, 2020-03-13