BSC0902NSI
MOSFET
OptiMOSTMPower-MOSFET,30V
SuperSO8
8
Features
•OptimizedSyncFETforhighperformancebuckconverter
•IntegratedmonolithicSchottky-likediode
•Verylowon-resistanceRDS(on)@VGS=4.5V
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Value
Unit
VDS
30
V
RDS(on),max
2.8
mΩ
ID
100
A
QOSS
17
nC
QG(0V..10V)
24
nC
5
6
2
3
3
2
4
7
8
1
S1
8D
S2
7D
S3
6D
G4
5D
Type/OrderingCode
Package
Marking
RelatedLinks
BSC0902NSI
PG-TDSON-8
0902NSI
-
1)
6
5
4
1
Table1KeyPerformanceParameters
Parameter
7
J-STD20 and JESD22
Final Data Sheet
1
Rev.2.4,2019-11-13
OptiMOSTMPower-MOSFET,30V
BSC0902NSI
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.2.4,2019-11-13
OptiMOSTMPower-MOSFET,30V
BSC0902NSI
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Values
Unit
Note/TestCondition
100
65
89
56
23
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=4.5V,TC=25°C
VGS=4.5V,TC=100°C
VGS=10V,TA=25°C,RthJA=50K/W1)
-
400
A
TC=25°C
-
-
50
A
TC=25°C
EAS
-
-
30
mJ
ID=40A,RGS=25Ω
Gate source voltage
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
48
2.5
W
TC=25°C
TA=25°C,RthJA=50K/W1)
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
ID,pulse
-
Avalanche current, single pulse
IAS
Avalanche energy, single pulse
Continuous drain current
Pulsed drain current2)
3)
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case,
bottom
Values
Min.
Typ.
Max.
RthJC
-
-
2.6
K/W
-
Thermal resistance, junction - case,
top
RthJC
-
-
20
K/W
-
Device on PCB,
6 cm2 cooling area1)
RthJA
-
-
50
K/W
-
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See Diagram 3 for more detailed information
3)
See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.2.4,2019-11-13
OptiMOSTMPower-MOSFET,30V
BSC0902NSI
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
V(BR)DSS
Breakdown voltage temperature
coefficient
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=10mA
15
-
mV/K ID=10mA,referencedto25°C
1.2
-
2
V
VDS=VGS,ID=10mA
IDSS
-
2
0.5
-
mA
VDS=24V,VGS=0V
VDS=24V,VGS=0V,Tj=125°C
Gate-source leakage current
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
3.0
2.3
3.7
2.8
mΩ
VGS=4.5V,ID=30A
VGS=10V,ID=30A
Gate resistance
RG
0.5
0.9
1.8
Ω
-
Transconductance
gfs
50
100
-
S
|VDS|>2|ID|RDS(on)max,ID=30A
Unit
Note/TestCondition
Min.
Typ.
Max.
30
-
dV(BR)DSS/dTj -
Gate threshold voltage
VGS(th)
Zero gate voltage drain current
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Values
Min.
Typ.
Max.
Ciss
-
1500
2000
pF
VGS=0V,VDS=15V,f=1MHz
Output capacitance
Coss
-
630
840
pF
VGS=0V,VDS=15V,f=1MHz
Reverse transfer capacitance
Crss
-
88
-
pF
VGS=0V,VDS=15V,f=1MHz
Turn-on delay time
td(on)
-
3.9
-
ns
VDD=15V,VGS=10V,ID=30A,
RG,ext=1.6Ω
Rise time
tr
-
5.4
-
ns
VDD=15V,VGS=10V,ID=30A,
RG,ext=1.6Ω
Turn-off delay time
td(off)
-
20
-
ns
VDD=15V,VGS=10V,ID=30A,
RG,ext=1.6Ω
Fall time
tf
-
3.8
-
ns
VDD=15V,VGS=10V,ID=30A,
RG,ext=1.6Ω
Unit
Note/TestCondition
Table6Gatechargecharacteristics1)
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
-
4.0
-
nC
VDD=15V,ID=30A,VGS=0to4.5V
Gate charge at threshold
Qg(th)
-
2.4
-
nC
VDD=15V,ID=30A,VGS=0to4.5V
Gate to drain charge
Qgd
-
4.0
-
nC
VDD=15V,ID=30A,VGS=0to4.5V
Switching charge
Qsw
-
5.6
-
nC
VDD=15V,ID=30A,VGS=0to4.5V
Gate charge total
Qg
-
12.2
16.2
nC
VDD=15V,ID=30A,VGS=0to4.5V
Gate plateau voltage
Vplateau
-
2.6
-
V
VDD=15V,ID=30A,VGS=0to4.5V
Gate charge total
Qg
-
24
32
nC
VDD=15V,ID=30A,VGS=0to10V
Gate charge total, sync. FET
Qg(sync)
-
9.8
-
nC
VDS=0.1V,VGS=0to4.5V
Output charge
Qoss
-
17
23
nC
VDD=15V,VGS=0V
1)
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.2.4,2019-11-13
OptiMOSTMPower-MOSFET,30V
BSC0902NSI
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Values
Unit
Note/TestCondition
48
A
TC=25°C
-
192
A
TC=25°C
-
0.54
0.7
V
VGS=0V,IF=4A,Tj=25°C
-
5
-
nC
VR=15V,IF=4A,diF/dt=400A/µs
Min.
Typ.
Max.
IS
-
-
Diode pulse current
IS,pulse
-
Diode forward voltage
VSD
Reverse recovery charge
Qrr
Final Data Sheet
5
Rev.2.4,2019-11-13
OptiMOSTMPower-MOSFET,30V
BSC0902NSI
4Electricalcharacteristicsdiagrams
Diagram2:Draincurrent
60
120
50
100
40
80
ID[A]
Ptot[W]
Diagram1:Powerdissipation
30
60
20
40
10
20
0
0
40
80
120
0
160
0
40
80
TC[°C]
120
160
TC[°C]
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
101
10
1 µs
10 µs
2
10
100 µs
0.5
100
0.2
ZthJC[K/W]
ID[A]
1 ms
101
10 ms
0.1
0.05
DC
10
-1
0.02
0.01
100
single pulse
10-1
10-1
100
101
102
10-2
10-6
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
6
Rev.2.4,2019-11-13
OptiMOSTMPower-MOSFET,30V
BSC0902NSI
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
400
6
10 V
5 V 4.5 V
5
4V
300
3.2 V
4
RDS(on)[mΩ]
ID[A]
3.5 V
200
3.5 V
4V
4.5 V
5V
3
7V
8V
10 V
2
3.2 V
100
3V
1
2.8 V
0
0
1
2
0
3
0
10
20
VDS[V]
30
40
50
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
400
240
200
320
160
ID[A]
gfs[S]
240
120
160
80
80
40
150 °C
25 °C
0
0
1
2
3
4
5
0
0
VGS[V]
80
120
160
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
40
gfs=f(ID);Tj=25°C
7
Rev.2.4,2019-11-13
OptiMOSTMPower-MOSFET,30V
BSC0902NSI
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
4
2.0
3
1.5
VGS(th)[V]
2.5
RDS(on)[mΩ]
5
typ
2
1
1.0
0.5
0
-60
-20
20
60
100
140
0.0
-60
180
-20
20
Tj[°C]
60
100
140
180
Tj[°C]
RDS(on)=f(Tj);ID=30A;VGS=10V
VGS(th)=f(Tj);VGS=VDS;ID=10mA
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
103
10
-55 °C
25 °C
125 °C
150 °C
Ciss
103
102
IF[A]
C[pF]
Coss
101
Crss
102
100
101
0
10
20
30
10-1
0.0
0.2
VDS[V]
0.6
0.8
1.0
1.2
VSD[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
0.4
IF=f(VSD);parameter:Tj
8
Rev.2.4,2019-11-13
OptiMOSTMPower-MOSFET,30V
BSC0902NSI
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
2
10
12
15 V
10
25 °C
6V
24 V
100 °C
101
8
IAV[A]
VGS[V]
125 °C
100
6
4
2
10-1
100
101
102
103
tAV[µs]
0
0
5
10
15
20
25
30
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=30Apulsed;parameter:VDD
Diagram15:Typ.drain-sourceleakagecurrent
Diagram Gate charge waveforms
-2
10
10-3
125 °C
10-4
IDSS[A]
100 °C
75 °C
-5
10
10-6
10-7
25 °C
0
5
10
15
20
25
VDS[V]
IDSS=f(VDS);VGS=0V;parameter:Tj
Final Data Sheet
9
Rev.2.4,2019-11-13
OptiMOSTMPower-MOSFET,30V
BSC0902NSI
5PackageOutlines
DOCUMENT NO.
Z8B00003332
REVISION
07
DIMENSION
A
A1
b
D
D1
D2
E
E1
E2
e
L
M
MILLIMETERS
MIN.
MAX.
0.90
1.20
0.15
0.35
0.34
0.54
4.80
5.35
3.90
4.40
0.03
0.23
5.70
6.10
5.90
6.42
3.88
4.31
1.27
0.45
0.71
0.45
0.69
SCALE 10:1
0
1
2
3mm
EUROPEAN PROJECTION
ISSUE DATE
06.06.2019
Figure1OutlinePG-TDSON-8,dimensionsinmm
Final Data Sheet
10
Rev.2.4,2019-11-13
OptiMOSTMPower-MOSFET,30V
BSC0902NSI
Dimension in mm
Figure2OutlineTape(TDSON-8)
Final Data Sheet
11
Rev.2.4,2019-11-13
OptiMOSTMPower-MOSFET,30V
BSC0902NSI
PG-TDSON-8: RecommenGHd BoDrdpads & Apertures
1.905
1.905
1.27
3x
0.6
1.27
3x
copper
Figure 3
Final Data Sheet
1.6
0.2
1.27
3x
0.825
2.863
0.5
0.925
2.863
1.27
3x
1.905
0.875
1.5
0.75
0.2
2.9
4.455
3.325
0.8
0.5
1.5
0.4
1.905
stencil apertures
solder mask
all dimensions in mm
Outline Boardpads (TDSON-8), dimensions in mm
12
Rev.2.4,2019-11-13
OptiMOS TM Power-MOSFET , 30 V
BSC0902NSI
Revision History
BSC0902NSI
Revision: 2019-11-13, Rev. 2.4
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.3
2016-02-03
Update Coss max
2.4
2019-11-13
Update package drawings
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously
improve the quality of this document. Please send your proposal (including a reference to this document) to:
erratum@infineon.com
Published by
Infineon Technologies AG
81726 München, Germany
© 2019 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the
product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation
warranties of non-infringement of intellectual property rights of any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the
product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s
technical departments to evaluate the suitability of the product for the intended application and the completeness of the product
information given in this document with respect to such application.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com ).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or
automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a
failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and
aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Final Data Sheet
13
Rev. 2.4, 2019-11-13