BSC0902NSI
OptiMOSTM Power-MOSFET
Product Summary
Features
• Optimized SyncFET for high performance buck converter
• Integrated monolithic Schottky-like diode
• Very low on-resistance R DS(on) @ V GS=4.5 V
• 100% avalanche tested
VDS
30
V
RDS(on),max
2.8
mW
ID
100
A
QOSS
17
nC
QG(0V..10V)
24
nC
• Superior thermal resistance
• N-channel
• Qualified according to JEDEC1) for target applications
PG-TDSON-8
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
Package
Marking
BSC0902NSI
PG-TDSON-8
0902NSI
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
V GS=10 V, T C=25 °C
100
V GS=10 V, T C=100 °C
65
V GS=4.5 V, T C=25 °C
89
V GS=4.5 V,
T C=100 °C
56
V GS=10 V, T A=25 °C,
R thJA=50 K/W 2)
23
Unit
A
Pulsed drain current3)
I D,pulse
T C=25 °C
400
Avalanche current, single pulse4)
I AS
T C=25 °C
50
Avalanche energy, single pulse
E AS
I D=40 A, R GS=25 W
30
mJ
Gate source voltage
V GS
±20
V
1)
J-STD20 and JESD22
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
Rev. 2.2
page 1
2013-05-16
BSC0902NSI
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot
Value
T C=25 °C
48
T A=25 °C,
T j, T stg
-55 ... 150
IEC climatic category; DIN IEC 68-1
Parameter
W
2.5
R thJA=50 K/W 2)
Operating and storage temperature
Unit
°C
55/150/56
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
2.6
top
-
-
20
6 cm2 cooling area2)
-
-
50
30
-
-
V
-
15
-
mV/K
V
Thermal characteristics
Thermal resistance, junction - case
Device on PCB
R thJC
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=10 mA
Breakdown voltage temperature
coefficient
dV (BR)DSS I D=10 mA, referenced
/dT j
to 25 °C
Gate threshold voltage
V GS(th)
V DS=V GS, I D=10 mA
1.2
-
2
Zero gate voltage drain current
I DSS
V DS=24 V, V GS=0 V
-
-
0.5
V DS=24 V, V GS=0 V,
T j=125 °C
-
2
-
mA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
Drain-source on-state resistance
R DS(on)
V GS=4.5 V, I D=30 A
-
3.0
3.7
mW
V GS=10 V, I D=30 A
-
2.3
2.8
0.5
0.9
1.8
W
50
100
-
S
Gate resistance
RG
Transconductance
g fs
3)
|V DS|>2|I D|R DS(on)max,
I D=30 A
See figure 3 for more detailed information
Rev. 2.2
page 2
2013-05-16
BSC0902NSI
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
1500
1995
-
630
208
Dynamic characteristics
Input capacitance
C iss
V GS=0 V, V DS=15 V,
f =1 MHz
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
88
-
Turn-on delay time
t d(on)
-
3.9
-
Rise time
tr
-
5.4
-
Turn-off delay time
t d(off)
-
20
-
Fall time
tf
-
3.8
-
Gate to source charge
Q gs
-
4.0
5.3
Gate charge at threshold
Q g(th)
-
2.4
-
Gate to drain charge
Q gd
-
4.0
5.2
Switching charge
Q sw
-
5.6
-
Gate charge total
Qg
-
12.2
16.2
Gate plateau voltage
V plateau
-
2.6
-
Gate charge total
Qg
V DD=15 V, I D=30 A,
V GS=0 to 10 V
-
24
32
Gate charge total, sync. FET
Q g(sync)
V DS=0.1 V,
V GS=0 to 4.5 V
-
9.8
-
Output charge
Q oss
V DD=15 V, V GS=0 V
-
17
23
-
-
48
-
-
192
V DD=15 V, V GS=10 V,
I D=30 A, R G,ext=1.6 W
pF
ns
Gate Charge Characteristics5)
V DD=15 V, I D=30 A,
V GS=0 to 4.5 V
nC
V
nC
Reverse Diode
Diode continuous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
V GS=0 V, I F=4 A,
T j=25 °C
-
0.54
0.7
Reverse recovery charge
Q rr
V R=15 V, I F=4 A,
di F/dt =400 A/µs
-
5
-
4)
5)
A
T C=25 °C
V
nC
See figure 13 for more detailed information
See figure 16 for gate charge parameter definition
Rev. 2.2
page 3
2013-05-16
BSC0902NSI
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
60
120
50
100
40
80
ID [A]
Ptot [W]
1 Power dissipation
30
60
20
40
10
20
0
0
0
40
80
120
0
160
40
80
TC [°C]
120
160
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
101
limited by on-state
resistance
1 µs
10 µs
102
100 µs
0.5
100
0.2
ZthJC [K/W]
ID [A]
1 ms
101
10 ms
0.1
0.05
DC
10-1
0.02
0.01
100
single pulse
10-1
10-2
10-1
100
101
102
VDS [V]
Rev. 2.2
10-6
10-5
10-4
10-3
10-2
10-1
100
tp [s]
page 4
2013-05-16
BSC0902NSI
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
400
6
10 V
5V
4.5 V
5
4V
300
3.2 V
RDS(on) [mW]
ID [A]
4
200
3.5 V
3.5 V
4V
4.5 V
5V
3
7V
8V
10 V
2
3.2 V
100
3V
1
2.8 V
0
0
0
1
2
3
0
10
20
VDS [V]
30
40
50
ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
400
240
200
320
160
ID [A]
gfs [S]
240
120
160
80
80
40
150 °C
25 °C
0
0
0
1
2
3
4
5
VGS [V]
Rev. 2.2
0
40
80
120
160
ID [A]
page 5
2013-05-16
BSC0902NSI
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=30 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS; I D=10 mA
5
2.5
4
2
3
1.5
VGS(th) [V]
RDS(on) [mW]
9 Drain-source on-state resistance
typ
2
1
1
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
Tj [°C]
60
100
140
180
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
103
Ciss
102
150 °C
103
25 °C
Coss
IF [A]
C [pF]
125 °C
101
-55 °C
Crss
102
100
101
10-1
0
10
20
30
VDS [V]
Rev. 2.2
0
0.2
0.4
0.6
0.8
1
1.2
VSD [V]
page 6
2013-05-16
BSC0902NSI
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 W
V GS=f(Q gate); I D=30 A pulsed
parameter: T j(start)
parameter: V DD
100
12
15 V
25 °C
10
6V
24 V
100 °C
10
8
IAV [A]
VGS [V]
125 °C
1
6
4
2
0.1
0
1
10
100
1000
0
5
tAV [µs]
10
15
20
25
30
Qgate [nC]
15 Typ. drain-source leakage current
16 Gate charge waveforms
I DSS=f(V DS ); V GS=0 V
parameter: T j
10-2
V GS
Qg
10-3
IDSS [A]
125 °C
10-4
100 °C
75 °C
V gs(th)
10-5
10-6
25 °C
Q g(th)
Q sw
Q gs
10-7
0
5
10
15
20
Q gate
Q gd
25
VDS [V]
Rev. 2.2
page 7
2013-05-16
BSC0902NSI
Package Outline
PG-TDSON-8
PG-TDSON-8: Outline
Rev. 2.2
page 8
2013-05-16
BSC0902NSI
Package Outline
PG-TDSON-8: Tape
Dimensions in mm
Rev. 2.2
page 9
2013-05-16
BSC0902NSI
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.2
page 10
2013-05-16
