BSC0925ND
OptiMOSTM Power-MOSFET
Product Summary
Features
• Dual N-channel OptiMOS™ MOSFET
• Optimized for clean switching
• 100% avalanche tested
• Superior thermal resistance
VDS
30
V
RDS(on),max
5
mW
ID
40
A
QOSS
8.6
nC
QG(0V..10V)
13
nC
• Optimized for high performance Buck converter
• Qualified according to JEDEC1) for target applications
VPhase
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
Package
Marking
BSC0925ND
PG-TISON-8
0925ND
Maximum ratings, at T j=25 °C, unless otherwise specified2)
Parameter
Symbol Conditions
Continuous drain current
ID
V GS=10 V, T C=25 °C
V GS=4.5 V,
T A=25 °C3)
V GS=4.5 V,
Value
40
Unit
A
15
T A=70 °C3)
12
V GS=10 V, T A=25 °C4)
11
Pulsed drain current5)
I D,pulse
T C=25 °C
160
Avalanche energy, single pulse
E AS
I D=20 A, R GS=25 W
14
mJ
Gate source voltage
V GS
±20
V
1)
J-STD20 and JESD22
2)
One transistor active
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
4)
Device mounted on a minimum pad (one layer, 70 µm thick). One transistor active
5)
See figure 3 for more detailed information.
Rev. 2.0
page 1
2013-07-30
BSC0925ND
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot
Value
T C=25 °C
30
T A=25 °C,
T j, T stg
-55 ... 150
IEC climatic category; DIN IEC 68-1
Parameter
W
2.5
R thJA=50 K/W 3)
Operating and storage temperature
Unit
°C
55/150/56
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
4.2
top
-
-
20
6 cm2 cooling area3)
-
-
50
minimum footprint4)
-
-
125
Thermal characteristics
Thermal resistance, junction - case
Device on PCB
R thJC
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
30
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=250 µA
1.2
-
2.0
Zero gate voltage drain current
I DSS
V DS=30 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=30 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
Drain-source on-state resistance
R DS(on)
V GS=4.5 V, I D=20 A
-
5.6
7
mW
V GS=10 V, I D=20 A
-
4.2
5
1.3
2.6
5.2
W
38
77
-
S
Gate resistance
RG
Transconductance
g fs
Rev. 2.0
|V DS|>2|I D|R DS(on)max,
I D=30 A
page 2
2013-07-30
BSC0925ND
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
870
1157
-
330
439
Dynamic characteristics
Input capacitance
C iss
V GS=0 V, V DS=15 V,
f =1 MHz
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
49
-
Turn-on delay time
t d(on)
-
4.7
-
Rise time
tr
-
3.8
-
Turn-off delay time
t d(off)
-
17
-
Fall time
tf
-
3.0
-
Gate to source charge
Q gs
-
2.4
3.2
Gate charge at threshold
Q g(th)
-
1.4
-
Gate to drain charge
Q gd
-
2.2
2.9
Switching charge
Q sw
-
3.2
-
Gate charge total
Qg
-
6.7
8.9
Gate plateau voltage
V plateau
-
2.8
-
Gate charge total
Qg
V DD=15 V, I D=30 A,
V GS=0 to 10 V
-
13
17
Gate charge total, sync. FET
Q g(sync)
V DS=0.1 V,
V GS=0 to 4.5 V
-
5.4
-
Output charge
Q oss
V DD=15 V, V GS=0 V
-
8.6
11
-
-
30
-
-
120
V DD=15 V, V GS=10 V,
I D=20 A, R G,ext=1.6 W
pF
ns
Gate Charge Characteristics6)
V DD=15 V, I D=30 A,
V GS=0 to 4.5 V
nC
V
nC
Reverse Diode
Diode continuous forward current
IS
A
T C=25 °C
Diode pulse current
I S,pulse
Diode forward voltage
V SD
V GS=0 V, I F=20 A,
T j=25 °C
-
0.87
1
V
Reverse recovery charge
Q rr
V R=15 V, I F=I S,
di F/dt =400 A/µs
-
5
-
nC
6)
See figure 16 for gate charge parameter definition
Rev. 2.0
page 3
2013-07-30
BSC0925ND
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
40
50
40
30
ID [A]
Ptot [W]
30
20
20
10
10
0
0
0
40
80
120
160
0
40
80
TC [°C]
120
160
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
101
limited by on-state
resistance
1 µs
0.5
102
10 µs
100
ID [A]
1 ms
101
DC
0.2
0.1
ZthJC [K/W]
100 µs
10 ms
0.05
0.02
10-1
0.01
100
single pulse
10-1
10-2
10-1
100
101
102
VDS [V]
Rev. 2.0
10-6
10-5
10-4
10-3
10-2
10-1
100
tp [s]
page 4
2013-07-30
BSC0925ND
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
250
8
3.3 V
7
10 V
200
8V 5V
4.5 V
6
4.5 V
5V
ID [A]
RDS(on) [mW]
150
100
5
8V
10 V
4
3
3.3 V
2
50
1
0
0
0
1
2
3
0
10
20
VDS [V]
30
40
50
80
100
ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
250
160
200
120
ID [A]
gfs [S]
150
80
100
40
50
150 °C
25 °C
0
0
0
1
2
3
4
5
VGS [V]
Rev. 2.0
0
20
40
60
ID [A]
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2013-07-30
BSC0925ND
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=20 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS; I D=250 µA
7
2.5
6
2
5
1.5
RDS(on) [mW]
typ
VGS(th) [V]
4
3
1
2
0.5
1
0
0
-60
-20
20
60
100
140
180
-60
-20
20
Tj [°C]
60
100
140
180
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
103
10000
102
103
Ciss
1000
102
IF [A]
C [pF]
Coss
150 °C
100
10-1
10
0
5
10
15
20
25
VDS [V]
Rev. 2.0
25 °C
100
Crss
101
101
0
0.5
1
1.5
VSD [V]
page 6
2013-07-30
BSC0925ND
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 W
V GS=f(Q gate); I D=30 A pulsed
parameter: T j(start)
parameter: V DD
100
12
15 V
10
6V
24 V
VGS [V]
IAV [A]
8
25 °C
10
100 °C
125 °C
6
4
2
1
0
1
10
100
1000
0
4
tAV [µs]
8
12
16
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
34
V GS
Qg
32
VBR(DSS) [V]
30
28
26
V gs(th)
24
Q g(th)
22
Q sw
Q gs
20
-60
-20
20
60
100
140
Q gate
Q gd
180
Tj [°C]
Rev. 2.0
page 7
2013-07-30
BSC0925ND
Package Outline
Rev. 2.0
PG-TISON
page 8
2013-07-30
BSC0925ND
PG-TISON
Dimensions in mm
Rev. 2.0
page 9
2013-07-30
BSC0925ND
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
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The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.0
page 10
2013-07-30