BSC097N06NSATMA1

BSC097N06NS MOSFET OptiMOSTMPower-Transistor,60V SuperSO8 8 Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 7 5 6 4 1 2 3 6 5 3 2 4 7 8 1 Table1KeyPerformanceParameters Parameter Value Unit S1 8D VDS 60 V S2 7D RDS(on),max 9.7 mΩ S3 6D ID 46 A G4 5D QOSS 14 nC QG(0V..10V) 12 nC Type/OrderingCode Package BSC097N06NS PG-TDSON-8 1) Marking 097N06NS RelatedLinks - J-STD20 and JESD22 Final Data Sheet 1 Rev.2.2,2019-11-15 OptiMOSTMPower-Transistor,60V BSC097N06NS TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.2,2019-11-15 OptiMOSTMPower-Transistor,60V BSC097N06NS 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 46 29 12 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TC=25°C,RthJA=50K/W1) - 184 A TC=25°C - - 13 mJ ID=30A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 36 2.5 W TC=25°C TA=25°C,RthJA=50K/W1) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse3) EAS Gate source voltage 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - 2.1 3.5 K/W - Thermal resistance, junction - case, top RthJC - - 20 K/W - Device on PCB, 6 cm2 cooling area1) RthJA - - 50 K/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Final Data Sheet 3 Rev.2.2,2019-11-15 OptiMOSTMPower-Transistor,60V BSC097N06NS 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 2.8 3.3 V VDS=VGS,ID=14µA - 0.1 10 1 100 µA VDS=60V,VGS=0V,Tj=25°C VDS=60V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 8.0 12.0 9.7 14.6 mΩ VGS=10V,ID=40A VGS=6V,ID=10A Gate resistance1) RG - 1.1 1.7 Ω - Transconductance gfs 24 48 - S |VDS|>2|ID|RDS(on)max,ID=40A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 60 - Gate threshold voltage VGS(th) 2.1 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance1) Values Min. Typ. Max. Ciss - 860 1075 pF VGS=0V,VDS=30V,f=1MHz Coss - 210 263 pF VGS=0V,VDS=30V,f=1MHz Reverse transfer capacitance Crss - 16 32 pF VGS=0V,VDS=30V,f=1MHz Turn-on delay time td(on) - 6 - ns VDD=30V,VGS=10V,ID=40A, RG,ext,ext=1.6Ω Rise time tr - 2 - ns VDD=30V,VGS=10V,ID=40A, RG,ext,ext=1.6Ω Turn-off delay time td(off) - 10 - ns VDD=30V,VGS=10V,ID=40A, RG,ext,ext=1.6Ω Fall time tf - 2 - ns VDD=30V,VGS=10V,ID=40A, RG,ext,ext=1.6Ω Unit Note/TestCondition Output capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Gate charge at threshold Values Min. Typ. Max. Qgs - 4.5 - nC VDD=30V,ID=40A,VGS=0to10V Qg(th) - 2.4 - nC VDD=30V,ID=40A,VGS=0to10V Gate to drain charge Qgd - 2.6 3.7 nC VDD=30V,ID=40A,VGS=0to10V Switching charge Qsw - 4.7 - nC VDD=30V,ID=40A,VGS=0to10V Gate charge total Qg - 12 15 nC VDD=30V,ID=40A,VGS=0to10V Gate plateau voltage Vplateau - 5.2 - V VDD=30V,ID=40A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 10 - nC VDS=0.1V,VGS=0to10V Qoss - 14 19 nC VDD=30V,VGS=0V 1) 1) 1) Output charge 1) 2) Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.2,2019-11-15 OptiMOSTMPower-Transistor,60V BSC097N06NS Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) Values Unit Note/TestCondition 30 A TC=25°C - 184 A TC=25°C - 1.0 1.2 V VGS=0V,IF=30A,Tj=25°C trr - 33 53 ns VR=30V,IF=30A,diF/dt=100A/µs Qrr - 30 - nC VR=30V,IF=30A,diF/dt=100A/µs Min. Typ. Max. IS - - IS,pulse - VSD Defined by design. Not subject to production test Final Data Sheet 5 Rev.2.2,2019-11-15 OptiMOSTMPower-Transistor,60V BSC097N06NS 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 40 60 ID[A] Ptot[W] 40 20 20 0 0 25 50 75 100 125 150 0 175 0 25 50 75 TC[°C] 100 125 Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 102 0.5 1 µs 100 100 µs 1 10 0.05 0.02 1 ms 100 100 101 0.01 10-1 10 ms DC 0.2 0.1 ZthJC[K/W] ID[A] 10 µs 10-1 single pulse 102 10-2 10-6 10-5 VDS[V] 10-4 10-3 10-2 10-1 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 175 101 10 10-1 150 TC[°C] ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.2,2019-11-15 OptiMOSTMPower-Transistor,60V BSC097N06NS Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 180 20 5V 150 5.5 V 16 6V 10 V ID[A] RDS(on)[mΩ] 7V 120 90 6V 7V 12 8 10 V 60 5.5 V 4 30 5V 0 0.0 0.5 1.0 1.5 0 2.0 0 30 60 VDS[V] 90 120 150 180 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 180 80 150 60 gfs[S] ID[A] 120 90 40 60 20 30 150 °C 0 0 2 4 25 °C 6 8 0 0 VGS[V] 40 60 80 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 20 gfs=f(ID);Tj=25°C 7 Rev.2.2,2019-11-15 OptiMOSTMPower-Transistor,60V BSC097N06NS Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 20 5 18 16 4 12 3 max VGS(th)[V] RDS(on)[mΩ] 14 10 typ 8 140 mA 14 µA 2 6 4 1 2 0 -60 -20 20 60 100 140 0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=40A;VGS=10V VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 150 °C 103 102 IF[A] C[pF] Ciss Coss 102 101 101 Crss 0 20 40 60 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 8 Rev.2.2,2019-11-15 OptiMOSTMPower-Transistor,60V BSC097N06NS Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 30 V 10 12 V 48 V 101 100 °C 125 °C VGS[V] IAV[A] 8 25 °C 100 6 4 2 10-1 100 101 102 103 tAV[µs] 0 0 5 10 15 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=40Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 70 66 VBR(DSS)[V] 62 58 54 50 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.2,2019-11-15 OptiMOSTMPower-Transistor,60V BSC097N06NS 5PackageOutlines DOCUMENT NO. Z8B00003332 REVISION 07 DIMENSION A A1 b D D1 D2 E E1 E2 e L M MILLIMETERS MIN. MAX. 0.90 1.20 0.15 0.35 0.34 0.54 4.80 5.35 3.90 4.40 0.03 0.23 5.70 6.10 5.90 6.42 3.88 4.31 1.27 0.45 0.71 0.45 0.69 SCALE 10:1 0 1 2 3mm EUROPEAN PROJECTION ISSUE DATE 06.06.2019 Figure1OutlinePG-TDSON-8,dimensionsinmm Final Data Sheet 10 Rev.2.2,2019-11-15 OptiMOSTMPower-Transistor,60V BSC097N06NS Dimension in mm Figure2OutlineTape(TDSON-8) Final Data Sheet 11 Rev.2.2,2019-11-15 OptiMOSTMPower-Transistor,60V BSC097N06NS PG-TDSON-8: RecommenGHd BoDrdpads & Apertures 1.905 1.905 1.27 3x 0.6 1.27 3x copper Figure 3 Final Data Sheet 1.6 0.2 1.27 3x 0.825 2.863 0.5 0.925 2.863 1.27 3x 1.905 0.875 1.5 0.75 0.2 2.9 4.455 3.325 0.8 0.5 1.5 0.4 1.905 stencil apertures solder mask all dimensions in mm Outline Boardpads (TDSON-8), dimensions in mm 12 Rev.2.2,2019-11-15 OptiMOS TM Power-Transistor , 60 V BSC097N06NS Revision History BSC097N06NS Revision: 2019-11-15, Rev. 2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.2 2019-11-15 Update package drawings and footnotes, addition RthJC_typ and Qoss_max Trademarks All referenced product or service names and trademarks are the property of their respective owners. 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The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 13 Rev. 2.2, 2019-11-15