BSC098N10NS5
MOSFET
OptiMOSTM5Power-Transistor,100V
SuperSO8
8
Features
•OptimizedforhighperformanceSMPS,e.g.sync.rec.
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
7
5
6
4
1
2
3
6
5
3
2
4
7
8
1
Table1KeyPerformanceParameters
Parameter
Value
Unit
S1
8D
VDS
100
V
S2
7D
RDS(on),max
9.8
mΩ
S3
6D
ID
60
A
G4
5D
Qoss
30
nC
QG(0V..10V)
22
nC
Type/OrderingCode
Package
BSC098N10NS5
PG-TDSON-8
1)
Marking
098N10NS
RelatedLinks
-
J-STD20 and JESD22
Final Data Sheet
1
Rev.2.2,2020-02-07
OptiMOSTM5Power-Transistor,100V
BSC098N10NS5
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.2.2,2020-02-07
OptiMOSTM5Power-Transistor,100V
BSC098N10NS5
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current
Values
Unit
Note/TestCondition
60
38
11
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=10V,TC=25°C,RthJA=50K/W1)
-
240
A
TC=25°C
-
-
39
mJ
ID=50A,RGS=25Ω
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
69
2.5
W
TC=25°C
TA=25°C,RthJA=50K/W2)
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
Pulsed drain current2)
ID,pulse
-
Avalanche energy, single pulse3)
EAS
Gate source voltage
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case,
bottom
Values
Min.
Typ.
Max.
RthJC
-
1.1
1.8
K/W
-
Thermal resistance, junction - case,
top
RthJC
-
-
20
K/W
-
Device on PCB,
6 cm2 cooling area1)
RthJA
-
-
50
K/W
-
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See Diagram 3 for more detailed information
3)
See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.2.2,2020-02-07
OptiMOSTM5Power-Transistor,100V
BSC098N10NS5
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
3.0
3.8
V
VDS=VGS,ID=36µA
-
0.1
10
1
100
µA
VDS=100V,VGS=0V,Tj=25°C
VDS=100V,VGS=0V,Tj=125°C
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
8.2
10.2
9.8
14.0
mΩ
VGS=10V,ID=30A
VGS=6V,ID=15A
Gate resistance1)
RG
-
1.2
1.8
Ω
-
Transconductance
gfs
28
57
-
S
|VDS|>2|ID|RDS(on)max,ID=30A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
100
-
Gate threshold voltage
VGS(th)
2.2
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Values
Min.
Typ.
Max.
Ciss
-
1600
2100
pF
VGS=0V,VDS=50V,f=1MHz
Coss
-
250
320
pF
VGS=0V,VDS=50V,f=1MHz
Reverse transfer capacitance
Crss
-
12
21
pF
VGS=0V,VDS=50V,f=1MHz
Turn-on delay time
td(on)
-
10
-
ns
VDD=50V,VGS=10V,ID=30A,
RG,ext=3Ω
Rise time
tr
-
5
-
ns
VDD=50V,VGS=10V,ID=30A,
RG,ext=3Ω
Turn-off delay time
td(off)
-
17
-
ns
VDD=50V,VGS=10V,ID=30A,
RG,ext=3Ω
Fall time
tf
-
4
-
ns
VDD=50V,VGS=10V,ID=30A,
RG,ext=3Ω
Unit
Note/TestCondition
Input capacitance1)
1)
Output capacitance
1)
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge
Gate charge at threshold
Values
Min.
Typ.
Max.
Qgs
-
7.4
-
nC
VDD=50V,ID=30A,VGS=0to10V
Qg(th)
-
4.4
-
nC
VDD=50V,ID=30A,VGS=0to10V
Gate to drain charge
Qgd
-
4.7
7.1
nC
VDD=50V,ID=30A,VGS=0to10V
Switching charge
Qsw
-
7.8
-
nC
VDD=50V,ID=30A,VGS=0to10V
Gate charge total
Qg
-
22
28
nC
VDD=50V,ID=30A,VGS=0to10V
Gate plateau voltage
Vplateau
-
4.8
-
V
VDD=50V,ID=30A,VGS=0to10V
Gate charge total, sync. FET
Qg(sync)
-
19
-
nC
VDS=0.1V,VGS=0to10V
Qoss
-
30
40
nC
VDD=50V,VGS=0V
1)
1)
1)
Output charge
1)
Defined by design. Not subject to production test.
SeeGatechargewaveformsforparameterdefinition.
2)
Final Data Sheet
4
Rev.2.2,2020-02-07
OptiMOSTM5Power-Transistor,100V
BSC098N10NS5
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Diode pulse current
Diode forward voltage
1)
Reverse recovery time
1)
Reverse recovery charge
1)
Values
Unit
Note/TestCondition
63
A
TC=25°C
-
240
A
TC=25°C
-
0.9
1.1
V
VGS=0V,IF=30A,Tj=25°C
trr
-
49
99
ns
VR=50V,IF=30A,diF/dt=100A/µs
Qrr
-
73
146
nC
VR=50V,IF=30A,diF/dt=100A/µs
Min.
Typ.
Max.
IS
-
-
IS,pulse
-
VSD
Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.2.2,2020-02-07
OptiMOSTM5Power-Transistor,100V
BSC098N10NS5
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
80
70
60
50
40
ID[A]
Ptot[W]
60
40
30
20
20
10
0
0
25
50
75
100
125
150
0
175
0
25
50
75
TC[°C]
100
125
150
175
TC[°C]
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
101
10
1 µs
2
10
10 µs
100
1
10
ZthJC[K/W]
100 µs
ID[A]
1 ms
10 ms
0
10
0.5
0.2
0.1
0.05
10-1
DC
0.02
0.01
10-1
10-2
single pulse
10-1
100
101
102
103
10-2
10-6
10-5
VDS[V]
10-3
10-2
10-1
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-4
ZthJC=f(tp);parameter:D=tp/T
6
Rev.2.2,2020-02-07
OptiMOSTM5Power-Transistor,100V
BSC098N10NS5
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
320
18
10 V
280
5V
15
7V
5.5 V
6V
240
7V
12
RDS(on)[mΩ]
ID[A]
200
160
6V
120
10 V
9
6
80
5.5 V
40
5V
3
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
5.0
0
40
80
120
VDS[V]
160
200
240
280
320
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
200
160
160
120
ID[A]
gfs[S]
120
80
80
40
40
150 °C
0
0
2
25 °C
4
6
8
0
0
VGS[V]
80
120
160
200
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
40
gfs=f(ID);Tj=25°C
7
Rev.2.2,2020-02-07
OptiMOSTM5Power-Transistor,100V
BSC098N10NS5
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
20
5
4
15
360 µA
3
VGS(th)[V]
RDS(on)[mΩ]
max
10
typ
36 µA
2
5
1
0
-60
-20
20
60
100
140
0
-60
180
-20
20
Tj[°C]
60
100
140
180
Tj[°C]
RDS(on)=f(Tj);ID=30A;VGS=10V
VGS(th)=f(Tj);VGS=VDS
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
103
10
25 °C
150 °C
25°C max
150°C max
103
Ciss
IF[A]
C[pF]
102
Coss
102
101
101
Crss
100
0
20
40
60
80
100
100
0.0
0.5
VDS[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
1.0
1.5
2.0
VSD[V]
IF=f(VSD);parameter:Tj
8
Rev.2.2,2020-02-07
OptiMOSTM5Power-Transistor,100V
BSC098N10NS5
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
2
10
10
25 °C
8
100 °C
50 V
101
VGS[V]
IAV[A]
6
125 °C
20 V
80 V
4
0
10
2
10-1
100
101
102
103
tAV[µs]
0
0
10
20
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=30Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Diagram Gate charge waveforms
108
106
VBR(DSS)[V]
104
102
100
98
96
94
-60
-20
20
60
100
140
180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
9
Rev.2.2,2020-02-07
OptiMOSTM5Power-Transistor,100V
BSC098N10NS5
5PackageOutlines
DOCUMENT NO.
Z8B00003332
REVISION
07
DIMENSION
A
A1
b
D
D1
D2
E
E1
E2
e
L
M
MILLIMETERS
MIN.
MAX.
0.90
1.20
0.15
0.35
0.34
0.54
4.80
5.35
3.90
4.40
0.03
0.23
5.70
6.10
5.90
6.42
3.88
4.31
1.27
0.45
0.71
0.45
0.69
SCALE 10:1
0
1
2
3mm
EUROPEAN PROJECTION
ISSUE DATE
06.06.2019
Figure1OutlinePG-TDSON-8,dimensionsinmm
Final Data Sheet
10
Rev.2.2,2020-02-07
OptiMOSTM5Power-Transistor,100V
BSC098N10NS5
PG-TDSON-8: RecommenGHd BoDrdpads & Apertures
1.905
1.905
1.27
3x
0.6
1.27
3x
copper
Figure 2
Final Data Sheet
1.6
0.2
1.27
3x
0.825
2.863
0.5
0.925
2.863
1.27
3x
1.905
0.875
1.5
0.75
0.2
2.9
4.455
3.325
0.8
0.5
1.5
0.4
1.905
stencil apertures
solder mask
all dimensions in mm
Outline Boardpads (TDSON-8), dimensions in mm
11
Rev.2.2,2020-02-07
OptiMOS TM5 Power-Transistor , 100 V
BSC098N10NS5
Dimension in mm
Figure 3
Final Data Sheet
Outline Tape (TDSON-8)
12
Rev. 2.2, 2020-02-07
OptiMOS TM5 Power-Transistor , 100 V
BSC098N10NS5
Revision History
BSC098N10NS5
Revision: 2020-02-07, Rev. 2.2
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2014-12-17
Release of final version
2.1
2016-09-23
Update Avalanche Energy
2.2
2020-02-07
Update package drawings
Trademarks
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81726 München, Germany
© 2020 Infineon Technologies AG
All Rights Reserved.
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Final Data Sheet
13
Rev. 2.2, 2020-02-07